CN202519366U - Diffusion air inlet pipeline of polycrystalline silicon solar photovoltaic cell silicon wafer - Google Patents
Diffusion air inlet pipeline of polycrystalline silicon solar photovoltaic cell silicon wafer Download PDFInfo
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- CN202519366U CN202519366U CN2012200416390U CN201220041639U CN202519366U CN 202519366 U CN202519366 U CN 202519366U CN 2012200416390 U CN2012200416390 U CN 2012200416390U CN 201220041639 U CN201220041639 U CN 201220041639U CN 202519366 U CN202519366 U CN 202519366U
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- China
- Prior art keywords
- air inlet
- phosphorus source
- pipeline
- diffusion
- photovoltaic cell
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model relates to a diffusion air inlet pipeline of a polycrystalline silicon solar photovoltaic cell silicon wafer. The diffusion air inlet pipeline is characterized by comprising an air inlet main pipeline (1), wherein the front end of the air inlet main pipeline (1) is connected with an air inlet end of a tubular diffusion furnace (2), the back end of the air inlet main pipeline (1) is connected with an oxygen inlet pipeline (3) and a macronitrogen inlet pipeline (4), the middle part of the air inlet main pipeline (1) is connected with a phosphorus source bottle (6) through a phosphorus source pipeline (5), and the phosphorus source bottle (6) is connected with a micronitrogen inlet pipeline (7). According to the diffusion air inlet pipeline of the polycrystalline silicon solar photovoltaic cell silicon wafer disclosed by the utility model, the macronitrogen inlet pipeline is arranged at the back end of the phosphorus source pipeline, the macronitrogen can bring the phosphorus source into a furnace pipe of the tubular diffusion furnace fast, so that the use ratio of the phosphorus source is improved.
Description
Technical field
The utility model relates to a kind of solar-energy photo-voltaic cell, and admission passage is used in particularly a kind of diffusion of polycrystalline silicon solar photovoltaic cell silicon chip, belongs to solar cell and makes the field.
Background technology
Rise in the polycrystalline silicon solar cell technology of the eighties in last century, process is advanced accumulation and the improvement in 30 years, successfully this technology is applied in the extensive polycrystalline silicon solar cell production.The breakthrough of whole world photovoltaic generation installation total amount, the tubular type diffusion scheme of the brilliance that has benefited from providing such as companies such as German Centrotherm Photovoltaics, Dutch Tempress Systems.These tubular diffusion furnace that are applicable to polysilicon have all been carried out unique design from systems such as temperature control method, the processing of pump drainage wind, soft landings, satisfy the needs of polysilicon scale operation.
As shown in Figure 2, the big nitrogen admission passage of conventional diffusion method is arranged at the front end on phosphorus source capsule road, because the interference in air flow of big nitrogen is unfavorable for the quick derivation in phosphorus source, this design makes that phosphorus source utilization ratio is lower in the diffusion process.
The utility model content
The purpose of the utility model is to overcome above-mentioned deficiency, provides the diffusion of the higher polycrystalline silicon solar photovoltaic cell silicon chip of phosphorus source utilization ratio in a kind of diffusion process to use admission passage.
The purpose of the utility model is achieved in that
A kind of diffusion of polycrystalline silicon solar photovoltaic cell silicon chip comprises the air inlet main line with admission passage; The front end of said air inlet main line is connected with the inlet end of tubular diffusion furnace; The rear end of said air inlet main line is connected with oxygen intake pipe road and big nitrogen admission passage; The centre of said air inlet main line is connected with phosphorus source bottle through phosphorus source capsule road, is connected with little nitrogen admission passage on the bottle of said phosphorus source.
The beneficial effect of the utility model is:
Admission passage is used in the diffusion of the utility model polycrystalline silicon solar photovoltaic cell silicon chip, and big nitrogen admission passage is arranged at the rear end on phosphorus source capsule road, and big nitrogen can be brought the phosphorus source into the boiler tube of tubular diffusion furnace rapidly, thereby has improved phosphorus source utilization ratio.
Description of drawings
Fig. 1 is the admission passage synoptic diagram of the diffusion of the utility model polycrystalline silicon solar photovoltaic cell silicon chip with admission passage.
Fig. 2 is the admission passage synoptic diagram of the diffusion of traditional polycrystalline silicon solar photovoltaic cell silicon chip with admission passage.
Wherein:
Air inlet main line 1
Oxygen intake pipe road 3
Big nitrogen admission passage 4
Phosphorus source capsule road 5
Phosphorus source bottle 6
Little nitrogen admission passage 7.
Embodiment
As shown in Figure 1; The diffusion of a kind of polycrystalline silicon solar photovoltaic cell silicon chip that the utility model relates to comprises air inlet main line 1 with admission passage; The front end of said air inlet main line 1 is connected with the inlet end of tubular diffusion furnace 2; The rear end of said air inlet main line 1 is connected with oxygen intake pipe road 3 and big nitrogen admission passage 4, and the centre of said air inlet main line 1 is connected with phosphorus source bottle 6 through phosphorus source capsule road 5, is connected with little nitrogen admission passage 7 on the said phosphorus source bottle 6.
Claims (1)
1. admission passage is used in the diffusion of a polycrystalline silicon solar photovoltaic cell silicon chip; It is characterized in that said admission passage comprises air inlet main line (1); The front end of said air inlet main line (1) is connected with the inlet end of tubular diffusion furnace (2); The rear end of said air inlet main line (1) is connected with oxygen intake pipe road (3) and big nitrogen admission passage (4); The centre of said air inlet main line (1) is connected with phosphorus source bottle (6) through phosphorus source capsule road (5), is connected with little nitrogen admission passage (7) on the said phosphorus source bottle (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200416390U CN202519366U (en) | 2012-02-09 | 2012-02-09 | Diffusion air inlet pipeline of polycrystalline silicon solar photovoltaic cell silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200416390U CN202519366U (en) | 2012-02-09 | 2012-02-09 | Diffusion air inlet pipeline of polycrystalline silicon solar photovoltaic cell silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202519366U true CN202519366U (en) | 2012-11-07 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012200416390U Expired - Lifetime CN202519366U (en) | 2012-02-09 | 2012-02-09 | Diffusion air inlet pipeline of polycrystalline silicon solar photovoltaic cell silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202519366U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103225111A (en) * | 2013-05-06 | 2013-07-31 | 上海煦康电子科技有限公司 | Continuous diffusion furnace and its ventilation method |
-
2012
- 2012-02-09 CN CN2012200416390U patent/CN202519366U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103225111A (en) * | 2013-05-06 | 2013-07-31 | 上海煦康电子科技有限公司 | Continuous diffusion furnace and its ventilation method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: North West yangshe Town Economic Development Zone of Zhangjiagang City, Suzhou City, Jiangsu province 215600 Patentee after: SUZHOU AIKANG PHOTOELECTRIC TECHNOLOGY CO., LTD. Address before: North West yangshe Town Economic Development Zone of Zhangjiagang City, Suzhou City, Jiangsu province 215600 Patentee before: Suzhou Suncome Solar Science & Technology Co., Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20121107 |
|
| CX01 | Expiry of patent term |