CN102544226A - Polycrystalline silicon battery sheet rapid variable temperature phosphorus gettering process - Google Patents
Polycrystalline silicon battery sheet rapid variable temperature phosphorus gettering process Download PDFInfo
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- CN102544226A CN102544226A CN2012100217141A CN201210021714A CN102544226A CN 102544226 A CN102544226 A CN 102544226A CN 2012100217141 A CN2012100217141 A CN 2012100217141A CN 201210021714 A CN201210021714 A CN 201210021714A CN 102544226 A CN102544226 A CN 102544226A
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- polycrystalline silicon
- phosphorus
- silicon battery
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a polycrystalline silicon battery sheet rapid variable temperature phosphorus gettering process, which is high in conversion efficiency and comprises the following steps of 1 introducing phosphorus oxychloride at the low temperature of 800 DEG C for 900s with the gas flow of 1000sccm, 2 enabling the furnace temperature to be raised to 850 DEG C, and introducing the phosphorus oxychloride for 780s with the gas flow of 1000sccm, 3 conducting constant temperature deposition oushing at the temperature of 850 DEG C for 900s, and fast cooling, enabling the furnace tube temperature to be declined to the low temperature of 600 DEG C, and conducting secondary pushing and gettering for 600s. The polycrystalline silicon battery sheet rapid variable temperature phosphorus gettering process is applicable to production of polycrystalline silicon battery sheets.
Description
Technical field
The present invention relates to a kind of polycrystal silicon cell sheet production technology, relate in particular to a kind of polycrystal silicon cell sheet quick changeable temperature phosphorus gettering process.
Background technology
World's photovoltaic solar industry and market are under the pressure of the energy situation of sternness and biological environment; Under technological progress promotes; And under the brute force of rules policy promotes; 2 one magnitude that descended in the past 30 years of the cost of photovoltaic industry, photovoltaic industry keeps annual 40%～50% growth in 5 years in the past.Present domestic photovoltaic industry chain has developed into that practitioner is nearly 100,000, the output value crosses hundred billion, profits tax surpasses 20,000,000,000, output is near the enterprise of 1100MW.Still restrict the principal element that photovoltaic industry further develops but cost is too high; The photoelectric conversion efficiency that improves battery is the effective means that reduces cost; Improve the conversion efficiency of solar cell, just can improve the power output of monolithic battery sheet, also promptly can improve the profit value of monolithic battery sheet.Therefore improve battery sheet photoelectric conversion rate and also can bring the huge social benefit, help building a resource-conserving, environmentally friendly novel society.Polysilicon has become the main raw material(s) that solar battery sheet is produced because of its high cost performance; Occupation rate of market surpasses 50%; But, have the faults of construction such as crystal boundary, dislocation, microdefect of higher density in various degree, and deficiency such as a large amount of metal impurities because the polycrystal silicon cell sheet compares with monocrystalline silicon; Cause the photoelectric current complex centre to increase, electricity conversion is on the low side.
Summary of the invention
The technical problem that the present invention will solve provides the high polycrystal silicon cell sheet quick changeable temperature phosphorus gettering process of a kind of transformation efficiency.
In order to solve the problems of the technologies described above, the present invention realizes through following technical scheme:
The present invention includes following steps:
1, the first step feeds POCl3 under 800 ℃ of low temperature, and the logical phosphorus time is 900s, and gas flow is 1000sccm;
2, furnace temperature is risen to 850 ℃, second step fed POCl3, and the logical phosphorus time is 780s, and gas flow is 1000sccm;
3, under 850 ℃, the constant temperature deposition advances, and the process time is 900s;
4, fast cooling makes furnace tube temperature be reduced to 600 ℃ of low temperature, carries out secondary and advances gettering, and the process time is 600s.
Because the present invention adopts the alternating temperature diffusion technology, especially adopts the quick changeable temperature phosphorus gettering process, has improved the gettering actuating force greatly, has effectively reduced the complex centre, has improved minority carrier life time, thereby reach the purpose that improves photoelectric conversion efficiency.
Embodiment
The present invention includes following steps:
1, the first step feeds POCl3 under 800 ℃ of low temperature, and the logical phosphorus time is 900s, and gas flow is 1000sccm;
2, furnace temperature is risen to 850 ℃, second step fed POCl3, and the logical phosphorus time is 780s, and gas flow is 1000sccm;
3, under 850 ℃, the constant temperature deposition advances, and the process time is 900s;
4, fast cooling makes furnace tube temperature be reduced to 600 ℃ of low temperature, carries out secondary and advances gettering, and the process time is 600s.
The present invention adopts the alternating temperature diffusion technology; The one, the feeding POCl3 was divided into for two steps; And under different temperatures, carry out, reaching the effect of the logical phosphorus of alternating temperature, the phosphorus gettering is to utilize dense phosphorous diffusion to form heavy diffusion layer; The gettering principle has comprised relaxation gettering and fractional condensation gettering, and the fractional condensation gettering is because Fermi level effect and ion pairing effect are formed on the enhancing dissolving of heavy diffusion layer; The relaxation gettering is the network of dislocation that is formed by heavy diffusion layer, forms when spreading owing to silicon simultaneously excessive to cause metal impurities to move to interstitial site from the displacement position from interstitial atom, makes the diffusion velocity increase, the completion of acceleration phosphorus gettering.
The 2nd, in the alternating temperature gettering; At first adopt the high temperature gettering, dissolution of metals deposition or complex make foreign atom become movably interstitial atom from different shape fast; But at high temperature, the polysilicon substrate is little with heavy diffusion layer region segregation coefficient difference; Following adopted low temperature gettering has increased the actuating force of gettering greatly, and under this situation, metal differs greatly at the segregation coefficient of zones of different, has improved the performance of polysilicon substrate significantly.
Claims (1)
1. a polycrystal silicon cell sheet quick changeable temperature phosphorus gettering process comprises the steps:
(1) first step feeds POCl3 under 800 ℃ of low temperature, and the logical phosphorus time is 900s, and gas flow is 1000sccm;
(2) furnace temperature is risen to 850 ℃, second step fed POCl3, and the logical phosphorus time is 780s, and gas flow is 1000sccm;
(3) under 850 ℃, the constant temperature deposition advances, and the process time is 900s;
(4) fast cooling makes furnace tube temperature be reduced to 600 ℃ of low temperature, carries out secondary and advances gettering, and the process time is 600s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100217141A CN102544226A (en) | 2012-01-30 | 2012-01-30 | Polycrystalline silicon battery sheet rapid variable temperature phosphorus gettering process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100217141A CN102544226A (en) | 2012-01-30 | 2012-01-30 | Polycrystalline silicon battery sheet rapid variable temperature phosphorus gettering process |
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| Publication Number | Publication Date |
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| CN102544226A true CN102544226A (en) | 2012-07-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2012100217141A Pending CN102544226A (en) | 2012-01-30 | 2012-01-30 | Polycrystalline silicon battery sheet rapid variable temperature phosphorus gettering process |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199152A (en) * | 2013-03-11 | 2013-07-10 | 苏州阿特斯阳光电力科技有限公司 | Phosphorus diffusion method of crystal silicon slice |
| CN112582499A (en) * | 2020-11-30 | 2021-03-30 | 中建材浚鑫科技有限公司 | Diffusion process suitable for matching multiple main gates with large-size silicon wafer |
Citations (5)
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| WO2001048797A1 (en) * | 1999-12-28 | 2001-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Production method for semiconductor device |
| CN101241954A (en) * | 2008-01-29 | 2008-08-13 | 江阴浚鑫科技有限公司 | Thermal processing method for crystal silicon solar battery |
| CN101667605A (en) * | 2009-09-03 | 2010-03-10 | 无锡尚品太阳能电力科技有限公司 | Phosphorus gettering process of silicon chip |
| CN102153089A (en) * | 2011-05-19 | 2011-08-17 | 厦门大学 | Method for gettering phosphorus in N-type polysilicon slice by metallurgical method |
| CN102332500A (en) * | 2011-09-28 | 2012-01-25 | 桂林尚科光伏技术有限责任公司 | Gettering process for solar cell fabrication |
-
2012
- 2012-01-30 CN CN2012100217141A patent/CN102544226A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001048797A1 (en) * | 1999-12-28 | 2001-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Production method for semiconductor device |
| CN101241954A (en) * | 2008-01-29 | 2008-08-13 | 江阴浚鑫科技有限公司 | Thermal processing method for crystal silicon solar battery |
| CN101667605A (en) * | 2009-09-03 | 2010-03-10 | 无锡尚品太阳能电力科技有限公司 | Phosphorus gettering process of silicon chip |
| CN102153089A (en) * | 2011-05-19 | 2011-08-17 | 厦门大学 | Method for gettering phosphorus in N-type polysilicon slice by metallurgical method |
| CN102332500A (en) * | 2011-09-28 | 2012-01-25 | 桂林尚科光伏技术有限责任公司 | Gettering process for solar cell fabrication |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199152A (en) * | 2013-03-11 | 2013-07-10 | 苏州阿特斯阳光电力科技有限公司 | Phosphorus diffusion method of crystal silicon slice |
| CN112582499A (en) * | 2020-11-30 | 2021-03-30 | 中建材浚鑫科技有限公司 | Diffusion process suitable for matching multiple main gates with large-size silicon wafer |
| CN112582499B (en) * | 2020-11-30 | 2022-09-23 | 中建材浚鑫科技有限公司 | Diffusion process suitable for matching multiple main gates with large-size silicon wafer |
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Application publication date: 20120704 |