CN101220463A - 半导体结构和化学汽相沉积方法 - Google Patents
半导体结构和化学汽相沉积方法 Download PDFInfo
- Publication number
- CN101220463A CN101220463A CNA200810002272XA CN200810002272A CN101220463A CN 101220463 A CN101220463 A CN 101220463A CN A200810002272X A CNA200810002272X A CN A200810002272XA CN 200810002272 A CN200810002272 A CN 200810002272A CN 101220463 A CN101220463 A CN 101220463A
- Authority
- CN
- China
- Prior art keywords
- precursor
- antimony
- atom
- chemical vapor
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 51
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 36
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 26
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 21
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000011810 insulating material Substances 0.000 claims abstract description 12
- 239000002243 precursor Substances 0.000 claims description 59
- 125000004429 atom Chemical group 0.000 claims description 24
- 239000000126 substance Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 15
- 229910000078 germane Inorganic materials 0.000 claims description 14
- VXGHASBVNMHGDI-UHFFFAOYSA-N digermane Chemical compound [Ge][Ge] VXGHASBVNMHGDI-UHFFFAOYSA-N 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 6
- -1 alkyl antimony Chemical compound 0.000 claims description 5
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- WMMYFRXVXJPWDI-UHFFFAOYSA-N dimethylaminoantimony Chemical compound CN(C)[Sb] WMMYFRXVXJPWDI-UHFFFAOYSA-N 0.000 claims description 4
- 229910000074 antimony hydride Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- OUULRIDHGPHMNQ-UHFFFAOYSA-N stibane Chemical compound [SbH3] OUULRIDHGPHMNQ-UHFFFAOYSA-N 0.000 claims description 3
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052986 germanium hydride Inorganic materials 0.000 claims description 2
- 229910005872 GeSb Inorganic materials 0.000 abstract description 34
- 238000000151 deposition Methods 0.000 abstract description 18
- 239000007789 gas Substances 0.000 description 15
- 230000008021 deposition Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000008246 gaseous mixture Substances 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000090 poly(aryl ether) Polymers 0.000 description 1
- 229920000412 polyarylene Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 125000003107 substituted aryl group Chemical group 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249994—Composite having a component wherein a constituent is liquid or is contained within preformed walls [e.g., impregnant-filled, previously void containing component, etc.]
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/621,365 | 2007-01-09 | ||
US11/621,365 US7749802B2 (en) | 2007-01-09 | 2007-01-09 | Process for chemical vapor deposition of materials with via filling capability and structure formed thereby |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101220463A true CN101220463A (zh) | 2008-07-16 |
CN101220463B CN101220463B (zh) | 2011-07-20 |
Family
ID=39593548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200810002272XA Expired - Fee Related CN101220463B (zh) | 2007-01-09 | 2008-01-08 | 半导体结构和化学汽相沉积方法 |
Country Status (2)
Country | Link |
---|---|
US (2) | US7749802B2 (zh) |
CN (1) | CN101220463B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102396061A (zh) * | 2009-04-15 | 2012-03-28 | 美光科技公司 | 沉积包含锑的相变材料到衬底的方法和形成相变存储器电路的方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8124445B2 (en) | 2010-07-26 | 2012-02-28 | Micron Technology, Inc. | Confined resistance variable memory cell structures and methods |
EP2474643B1 (en) * | 2011-01-11 | 2016-01-06 | Imec | Method for direct deposition of a germanium layer |
US8244299B1 (en) * | 2011-03-16 | 2012-08-14 | John Bishop | Grip attachment for a mobile phone |
US20130280891A1 (en) * | 2012-04-20 | 2013-10-24 | Yihwan Kim | Method and apparatus for germanium tin alloy formation by thermal cvd |
US11691911B2 (en) | 2017-04-13 | 2023-07-04 | Samsung Display Co., Ltd. | Reinforced window member and method of manufacturing the same |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100431110C (zh) * | 2000-08-18 | 2008-11-05 | 东京毅力科创株式会社 | 低介电氮化硅膜的形成方法和半导体器件及其制造工艺 |
US7005160B2 (en) * | 2003-04-24 | 2006-02-28 | Asm America, Inc. | Methods for depositing polycrystalline films with engineered grain structures |
KR100568109B1 (ko) * | 2003-11-24 | 2006-04-05 | 삼성전자주식회사 | 상변화 기억 소자 및 그 형성 방법 |
KR100653701B1 (ko) | 2004-08-20 | 2006-12-04 | 삼성전자주식회사 | 반도체 소자의 작은 비아 구조체 형성방법 및 이를 사용한상변화 기억 소자의 제조방법 |
US20060071213A1 (en) * | 2004-10-04 | 2006-04-06 | Ce Ma | Low temperature selective epitaxial growth of silicon germanium layers |
US20060172067A1 (en) * | 2005-01-28 | 2006-08-03 | Energy Conversion Devices, Inc | Chemical vapor deposition of chalcogenide materials |
KR100651657B1 (ko) * | 2005-06-29 | 2006-12-01 | 한국과학기술연구원 | 고집적 비휘발성 메모리용 상변화 재료 |
WO2007067604A2 (en) * | 2005-12-06 | 2007-06-14 | Structured Materials Inc. | Method of making undoped, alloyed and doped chalcogenide films by mocvd processes |
KR100695168B1 (ko) * | 2006-01-10 | 2007-03-14 | 삼성전자주식회사 | 상변화 물질 박막의 형성방법, 이를 이용한 상변화 메모리소자의 제조방법 |
US7453081B2 (en) * | 2006-07-20 | 2008-11-18 | Qimonda North America Corp. | Phase change memory cell including nanocomposite insulator |
US7772120B2 (en) * | 2007-01-09 | 2010-08-10 | International Business Machines Corporation | Chemical vapor deposition method for the incorporation of nitrogen into materials including germanium and antimony |
-
2007
- 2007-01-09 US US11/621,365 patent/US7749802B2/en not_active Expired - Fee Related
-
2008
- 2008-01-08 CN CN200810002272XA patent/CN101220463B/zh not_active Expired - Fee Related
-
2009
- 2009-08-13 US US12/540,923 patent/US20100009164A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102396061A (zh) * | 2009-04-15 | 2012-03-28 | 美光科技公司 | 沉积包含锑的相变材料到衬底的方法和形成相变存储器电路的方法 |
CN102396061B (zh) * | 2009-04-15 | 2013-11-27 | 美光科技公司 | 沉积包含锑的相变材料到衬底的方法和形成相变存储器电路的方法 |
Also Published As
Publication number | Publication date |
---|---|
US7749802B2 (en) | 2010-07-06 |
US20080164579A1 (en) | 2008-07-10 |
CN101220463B (zh) | 2011-07-20 |
US20100009164A1 (en) | 2010-01-14 |
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