CN101218651B - 非易失性存储器系统及软编程方法 - Google Patents

非易失性存储器系统及软编程方法 Download PDF

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Publication number
CN101218651B
CN101218651B CN2006800105187A CN200680010518A CN101218651B CN 101218651 B CN101218651 B CN 101218651B CN 2006800105187 A CN2006800105187 A CN 2006800105187A CN 200680010518 A CN200680010518 A CN 200680010518A CN 101218651 B CN101218651 B CN 101218651B
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volatile memory
memory device
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group
programming
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Chinese (zh)
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CN101218651A (zh
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格里特·简·赫民克
龟井辉彦
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Delphi International Operations Luxembourg SARL
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SanDisk Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/345—Circuits or methods to detect overerased nonvolatile memory cells, usually during erasure verification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3472—Circuits or methods to verify correct erasure of nonvolatile memory cells whilst erasing is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3477—Circuits or methods to prevent overerasing of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate erasing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/18—Flash erasure of all the cells in an array, sector or block simultaneously

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
CN2006800105187A 2005-03-31 2006-03-29 非易失性存储器系统及软编程方法 Active CN101218651B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US66704305P 2005-03-31 2005-03-31
US60/667,043 2005-03-31
US11/296,071 2005-12-06
US11/296,071 US7408804B2 (en) 2005-03-31 2005-12-06 Systems for soft programming non-volatile memory utilizing individual verification and additional soft programming of subsets of memory cells
US11/295,747 2005-12-06
US11/295,747 US7486564B2 (en) 2005-03-31 2005-12-06 Soft programming non-volatile memory utilizing individual verification and additional soft programming of subsets of memory cells
PCT/US2006/011354 WO2006105133A1 (en) 2005-03-31 2006-03-29 Soft programming non-volatile memory utilizing individual verification and additional soft programming of subsets of memory cells

Publications (2)

Publication Number Publication Date
CN101218651A CN101218651A (zh) 2008-07-09
CN101218651B true CN101218651B (zh) 2013-06-12

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CN2006800105187A Active CN101218651B (zh) 2005-03-31 2006-03-29 非易失性存储器系统及软编程方法

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EP (1) EP1864294A1 (ja)
JP (1) JP4796126B2 (ja)
KR (1) KR100892405B1 (ja)
CN (1) CN101218651B (ja)
TW (1) TWI313867B (ja)
WO (1) WO2006105133A1 (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7499338B2 (en) * 2006-10-13 2009-03-03 Sandisk Corporation Partitioned soft programming in non-volatile memory
WO2008048810A2 (en) 2006-10-13 2008-04-24 Sandisk Corporation Partitioned soft programming in non-volatile memory
KR100885784B1 (ko) * 2007-08-08 2009-02-26 주식회사 하이닉스반도체 불휘발성 메모리 장치의 소프트 프로그램 방법
US8369155B2 (en) 2007-08-08 2013-02-05 Hynix Semiconductor Inc. Operating method in a non-volatile memory device
KR101414494B1 (ko) * 2008-03-17 2014-07-04 삼성전자주식회사 메모리 장치 및 메모리 데이터 읽기 방법
JP2009230818A (ja) 2008-03-24 2009-10-08 Toshiba Corp 半導体記憶装置
JP5259666B2 (ja) 2010-09-22 2013-08-07 株式会社東芝 不揮発性半導体記憶装置
KR20120088451A (ko) 2011-01-31 2012-08-08 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 데이터 소거 방법
US9875810B2 (en) 2013-07-24 2018-01-23 Microsoft Technology Licensing, Llc Self-identifying memory errors
JP2015053098A (ja) 2013-09-09 2015-03-19 株式会社東芝 不揮発性半導体記憶装置
JP6779819B2 (ja) * 2017-03-22 2020-11-04 キオクシア株式会社 半導体記憶装置
KR102575476B1 (ko) 2018-07-11 2023-09-07 삼성전자주식회사 비휘발성 메모리 장치의 데이터 저장 방법, 데이터 소거 방법 및 이를 수행하는 비휘발성 메모리 장치
CN112965667B (zh) * 2020-02-20 2024-08-16 长江存储科技有限责任公司 对多平面存储器件进行编程的方法和多平面存储器件

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5768188A (en) * 1995-12-11 1998-06-16 Samsung Electronics Co., Ltd. Multi-state non-volatile semiconductor memory and method for driving the same
CN1359523A (zh) * 1999-06-08 2002-07-17 旺宏电子股份有限公司 用于位线软编程(blisp)的方法与集成电路
US20020133679A1 (en) * 2001-01-10 2002-09-19 Samsung Electronics Co., Ltd. Method for optimizing distribution profile of cell threshold voltages in nand-type flash memory device
WO2003063175A1 (en) * 2002-01-16 2003-07-31 Advanced Micro Devices, Inc. Method and apparatus for soft program verification in a memory device
JP2004127346A (ja) * 2002-09-30 2004-04-22 Toshiba Corp 不揮発性半導体メモリ装置
CN1494720A (zh) * 2001-04-09 2004-05-05 �Ƚ�΢װ�ù�˾ 闪存阵列中的核心存储单元的软程序及软程序校验
CN1182538C (zh) * 1999-08-09 2004-12-29 先进微装置公司 以软编程来紧缩vt分布的斜坡栅技术

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Publication number Priority date Publication date Assignee Title
JPH09320282A (ja) * 1996-05-27 1997-12-12 Sharp Corp 不揮発性半導体記憶装置の消去制御方法
JP2000236031A (ja) * 1999-02-16 2000-08-29 Toshiba Corp 不揮発性半導体記憶装置
JP2002157890A (ja) * 2000-11-16 2002-05-31 Mitsubishi Electric Corp 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ消去方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5768188A (en) * 1995-12-11 1998-06-16 Samsung Electronics Co., Ltd. Multi-state non-volatile semiconductor memory and method for driving the same
CN1359523A (zh) * 1999-06-08 2002-07-17 旺宏电子股份有限公司 用于位线软编程(blisp)的方法与集成电路
CN1182538C (zh) * 1999-08-09 2004-12-29 先进微装置公司 以软编程来紧缩vt分布的斜坡栅技术
US20020133679A1 (en) * 2001-01-10 2002-09-19 Samsung Electronics Co., Ltd. Method for optimizing distribution profile of cell threshold voltages in nand-type flash memory device
CN1494720A (zh) * 2001-04-09 2004-05-05 �Ƚ�΢װ�ù�˾ 闪存阵列中的核心存储单元的软程序及软程序校验
WO2003063175A1 (en) * 2002-01-16 2003-07-31 Advanced Micro Devices, Inc. Method and apparatus for soft program verification in a memory device
JP2004127346A (ja) * 2002-09-30 2004-04-22 Toshiba Corp 不揮発性半導体メモリ装置

Also Published As

Publication number Publication date
JP2008536248A (ja) 2008-09-04
KR100892405B1 (ko) 2009-04-10
CN101218651A (zh) 2008-07-09
JP4796126B2 (ja) 2011-10-19
TWI313867B (en) 2009-08-21
EP1864294A1 (en) 2007-12-12
KR20080016537A (ko) 2008-02-21
TW200703340A (en) 2007-01-16
WO2006105133A1 (en) 2006-10-05

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Address after: American Texas

Patentee after: DELPHI INT OPERATIONS LUX SRL

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Patentee before: Sandisk Corp.