CN101207182B - 噻吩电子器件 - Google Patents

噻吩电子器件 Download PDF

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Publication number
CN101207182B
CN101207182B CN2007101995591A CN200710199559A CN101207182B CN 101207182 B CN101207182 B CN 101207182B CN 2007101995591 A CN2007101995591 A CN 2007101995591A CN 200710199559 A CN200710199559 A CN 200710199559A CN 101207182 B CN101207182 B CN 101207182B
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CN
China
Prior art keywords
phenyl
oxygen base
aryl
alkyl
group
Prior art date
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Expired - Fee Related
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CN2007101995591A
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English (en)
Chinese (zh)
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CN101207182A (zh
Inventor
P·刘
B·S·翁
Y·吴
Y·李
H·潘
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Samsung Electronics Co Ltd
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Xerox Corp
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Publication date
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Publication of CN101207182A publication Critical patent/CN101207182A/zh
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Publication of CN101207182B publication Critical patent/CN101207182B/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
CN2007101995591A 2006-12-14 2007-12-13 噻吩电子器件 Expired - Fee Related CN101207182B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/638,725 US7718998B2 (en) 2006-12-14 2006-12-14 Thiophene electronic devices
US11/638725 2006-12-14

Publications (2)

Publication Number Publication Date
CN101207182A CN101207182A (zh) 2008-06-25
CN101207182B true CN101207182B (zh) 2012-02-08

Family

ID=39204957

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007101995591A Expired - Fee Related CN101207182B (zh) 2006-12-14 2007-12-13 噻吩电子器件

Country Status (6)

Country Link
US (1) US7718998B2 (https=)
EP (1) EP1933394B1 (https=)
JP (1) JP2008153666A (https=)
CN (1) CN101207182B (https=)
CA (1) CA2613719C (https=)
TW (1) TW200840105A (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090181509A1 (en) * 2008-01-14 2009-07-16 Xerox Corporation Polymer semiconductors with high mobility
JP5487655B2 (ja) * 2008-04-17 2014-05-07 株式会社リコー ［１］ベンゾチエノ［３，２‐ｂ］［１］ベンゾチオフェン化合物およびその製造方法、それを用いた有機電子デバイス
CN102224619A (zh) * 2008-10-21 2011-10-19 江森自控帅福得先进能源动力系统有限责任公司 电池的改善电极结构
US7872258B2 (en) * 2008-11-19 2011-01-18 Xerox Corporation Organic thin-film transistors
US20120097903A1 (en) * 2008-12-19 2012-04-26 Vorbeck Materials Corp. Inks and coatings containing multi-chain lipids
US7919634B2 (en) * 2009-05-28 2011-04-05 Corning Incorporated Fused thiophenes, articles, and methods thereof
US20110031475A1 (en) * 2009-08-10 2011-02-10 Xerox Corporation Semiconductor Composition
WO2011041487A1 (en) 2009-09-30 2011-04-07 Innovotech, Llc Biocompatible and biodegradable polymers from renewable natural polyphenols
US7956199B2 (en) * 2009-10-08 2011-06-07 Xerox Corporation Methods for preparing benzodithiophenes
US8304512B2 (en) * 2010-01-19 2012-11-06 Xerox Corporation Benzodithiophene based materials compositions
JP5725494B2 (ja) * 2010-08-18 2015-05-27 国立大学法人岩手大学 有機半導体材料並びに有機半導体装置及びその製造方法
US8742403B2 (en) 2011-03-08 2014-06-03 Samsung Electronics Co., Ltd. Xanthene based semiconductor compositions
WO2012156500A1 (en) * 2011-05-18 2012-11-22 Université Libre de Bruxelles Semiconducting compound for gas sensing
CN102643290A (zh) * 2012-04-17 2012-08-22 中国科学院化学研究所 二苯并并四噻吩化合物及其制备方法与应用
JP5959647B2 (ja) * 2012-08-15 2016-08-02 帝人株式会社 有機半導体溶液及び有機半導体膜
JP6364878B2 (ja) * 2014-03-31 2018-08-01 東ソー株式会社 有機薄膜トランジスタ
JP2017059651A (ja) 2015-09-16 2017-03-23 株式会社東芝 光電変換材料分散液とその製造方法、光電変換膜の製造方法と製造装置、および光電変換素子
CN112819125A (zh) * 2021-01-27 2021-05-18 北京印刷学院 一种导电油墨、rfid织物标签及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999021935A1 (en) * 1997-10-23 1999-05-06 Isis Innovation Limited Light-emitting dendrimers and devices
WO2005016882A1 (en) * 2003-08-15 2005-02-24 Universite Laval Monomers, oligomers and polymers of 2-functionalized and 2,7-difunctionalized carbazoles
WO2006113205A2 (en) * 2005-04-15 2006-10-26 E. I. Du Pont De Nemours And Company Aryl-ethylene substituted aromatic compounds and their use as organic semiconductors

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3151997B2 (ja) * 1993-03-18 2001-04-03 東洋インキ製造株式会社 有機エレクトロルミネッセンス素子
US5619357A (en) 1995-06-06 1997-04-08 International Business Machines Corporation Flat panel display containing black matrix polymer
US5969376A (en) 1996-08-23 1999-10-19 Lucent Technologies Inc. Organic thin film transistor having a phthalocyanine semiconductor layer
US6107117A (en) 1996-12-20 2000-08-22 Lucent Technologies Inc. Method of making an organic thin film transistor
JPH10340786A (ja) * 1997-06-09 1998-12-22 Toyo Ink Mfg Co Ltd 有機エレクトロルミネッセンス素子材料およびそれを使用した有機エレクトロルミネッセンス素子
US5777070A (en) 1997-10-23 1998-07-07 The Dow Chemical Company Process for preparing conjugated polymers
JP4061561B2 (ja) * 1998-10-21 2008-03-19 富士電機ホールディングス株式会社 有機分子配向薄膜用材料及び有機分子配向薄膜の製造方法
US7250625B2 (en) 2002-01-11 2007-07-31 Xerox Corporation Polythiophenes and electronic devices generated therefrom
US6770904B2 (en) 2002-01-11 2004-08-03 Xerox Corporation Polythiophenes and electronic devices generated therefrom
US20030227014A1 (en) 2002-06-11 2003-12-11 Xerox Corporation. Process for forming semiconductor layer of micro-and nano-electronic devices
DE602004024629D1 (de) * 2003-10-15 2010-01-28 Merck Patent Gmbh Polybenzodithiophene
US7402681B2 (en) 2004-12-14 2008-07-22 Xerox Corporation Compound with indolocarbazole moieties and devices containing such compound
US20060124921A1 (en) 2004-12-14 2006-06-15 Xerox Corporation Compound with indolocarbazole moieties and devices containing such compound
JP4614272B2 (ja) * 2004-12-28 2011-01-19 国立大学法人京都大学 新規チオフェン誘導体及びそれを用いたトランジスタ素子
FR2881745A1 (fr) * 2005-02-08 2006-08-11 Univ Aix Marseille Ii Derives d'oligothiophenes et leur application en electronique organique
US8044219B2 (en) * 2005-05-13 2011-10-25 Agc Seimi Chemical., Ltd. Amino group-containing heterocyclic derivatives and sensitizing dyes for photoelectric conversion containing the heterocyclic derivatives
KR20070017692A (ko) * 2005-08-08 2007-02-13 삼성전자주식회사 저분자 공액 질소 화합물 및 이를 이용한 소자
JPWO2008059817A1 (ja) * 2006-11-14 2010-03-04 出光興産株式会社 有機薄膜トランジスタ及び有機薄膜発光トランジスタ
WO2008069060A1 (ja) * 2006-12-04 2008-06-12 Idemitsu Kosan Co., Ltd. 有機薄膜トランジスタ及び有機薄膜発光トランジスタ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999021935A1 (en) * 1997-10-23 1999-05-06 Isis Innovation Limited Light-emitting dendrimers and devices
WO2005016882A1 (en) * 2003-08-15 2005-02-24 Universite Laval Monomers, oligomers and polymers of 2-functionalized and 2,7-difunctionalized carbazoles
WO2006113205A2 (en) * 2005-04-15 2006-10-26 E. I. Du Pont De Nemours And Company Aryl-ethylene substituted aromatic compounds and their use as organic semiconductors

Also Published As

Publication number Publication date
CA2613719A1 (en) 2008-06-14
EP1933394A3 (en) 2010-06-23
JP2008153666A (ja) 2008-07-03
CA2613719C (en) 2013-02-19
TW200840105A (en) 2008-10-01
US20080146776A1 (en) 2008-06-19
US7718998B2 (en) 2010-05-18
EP1933394A2 (en) 2008-06-18
CN101207182A (zh) 2008-06-25
EP1933394B1 (en) 2019-06-26

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Owner name: SAMSUNG ELECTRONICS CO., LTD.

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Effective date: 20130717

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Patentee after: Samsung Electronics Co., Ltd.

Address before: Connecticut, USA

Patentee before: Xerox Corp.

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Granted publication date: 20120208

Termination date: 20131213