CN101164016B - 抑制电化腐蚀的非水光致抗蚀剂剥离剂 - Google Patents

抑制电化腐蚀的非水光致抗蚀剂剥离剂 Download PDF

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Publication number
CN101164016B
CN101164016B CN2006800132023A CN200680013202A CN101164016B CN 101164016 B CN101164016 B CN 101164016B CN 2006800132023 A CN2006800132023 A CN 2006800132023A CN 200680013202 A CN200680013202 A CN 200680013202A CN 101164016 B CN101164016 B CN 101164016B
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China
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sub
component
diamines
photoresist
composition weight
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CN2006800132023A
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Chinese (zh)
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CN101164016A (zh
Inventor
稻冈诚二
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Anwantuo Materials LLC
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Mallinckrodt Baker Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/37—Polymers
    • C11D3/3703—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
    • C11D3/3723—Polyamines or polyalkyleneimines
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)
  • Laminated Bodies (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Golf Clubs (AREA)
  • Pens And Brushes (AREA)
CN2006800132023A 2005-04-19 2006-03-16 抑制电化腐蚀的非水光致抗蚀剂剥离剂 Active CN101164016B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US67292305P 2005-04-19 2005-04-19
US60/672,923 2005-04-19
PCT/US2006/009389 WO2006112994A1 (en) 2005-04-19 2006-03-16 Non-aqueous photoresist stripper that inhibits galvanic corrosion

Publications (2)

Publication Number Publication Date
CN101164016A CN101164016A (zh) 2008-04-16
CN101164016B true CN101164016B (zh) 2010-12-01

Family

ID=36754183

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800132023A Active CN101164016B (zh) 2005-04-19 2006-03-16 抑制电化腐蚀的非水光致抗蚀剂剥离剂

Country Status (20)

Country Link
US (1) US20080280235A1 (enExample)
EP (1) EP1877870B1 (enExample)
JP (1) JP4677030B2 (enExample)
KR (1) KR101088568B1 (enExample)
CN (1) CN101164016B (enExample)
AT (1) ATE498859T1 (enExample)
BR (1) BRPI0610852A2 (enExample)
CA (1) CA2605236A1 (enExample)
DE (1) DE602006020125D1 (enExample)
DK (1) DK1877870T3 (enExample)
ES (1) ES2361271T3 (enExample)
IL (1) IL186565A0 (enExample)
MY (1) MY145299A (enExample)
NO (1) NO20075935L (enExample)
PL (1) PL1877870T3 (enExample)
PT (1) PT1877870E (enExample)
SG (1) SG161273A1 (enExample)
TW (1) TW200700549A (enExample)
WO (1) WO2006112994A1 (enExample)
ZA (1) ZA200706296B (enExample)

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JP5236217B2 (ja) * 2006-06-22 2013-07-17 東進セミケム株式会社 レジスト除去用組成物
US7851655B2 (en) * 2006-12-19 2010-12-14 Nalco Company Functionalized amine-based corrosion inhibitors for galvanized metal surfaces and method of using same
EP2268765A4 (en) * 2008-03-07 2011-10-26 Advanced Tech Materials UNSELECTIVE OXIDIZE WET CLEANING AGENT AND USE
JP4903242B2 (ja) * 2008-10-28 2012-03-28 アバントール パフォーマンス マテリアルズ， インコーポレイテッド 多金属デバイス処理のためのグルコン酸含有フォトレジスト洗浄組成物
US8110535B2 (en) * 2009-08-05 2012-02-07 Air Products And Chemicals, Inc. Semi-aqueous stripping and cleaning formulation for metal substrate and methods for using same
US8518865B2 (en) * 2009-08-31 2013-08-27 Air Products And Chemicals, Inc. Water-rich stripping and cleaning formulation and method for using same
WO2013118013A1 (en) * 2012-02-06 2013-08-15 Basf Se A post chemical-mechanical-polishing (post-cmp) cleaning composition comprising a specific sulfur-containing compound and a sugar alcohol or a polycarboxylic acid
CN103389627A (zh) * 2012-05-11 2013-11-13 安集微电子科技(上海)有限公司 一种光刻胶清洗液
US11168288B2 (en) * 2018-02-14 2021-11-09 Merck Patent Gmbh Photoresist remover compositions
JP7176089B2 (ja) 2018-07-20 2022-11-21 インテグリス・インコーポレーテッド 腐食防止剤を含む洗浄組成物
CN109557774A (zh) * 2019-01-22 2019-04-02 上海华虹宏力半导体制造有限公司 光刻胶去除方法及铝制程工艺方法
CN110967946A (zh) * 2019-12-04 2020-04-07 苏州博洋化学股份有限公司 一种高效碱性光刻胶剥离液
TW202437031A (zh) 2023-03-13 2024-09-16 台灣芯電應用科技股份有限公司 剝離劑組成物以及清洗方法
EP4440252A1 (en) * 2023-03-31 2024-10-02 Atotech Deutschland GmbH & Co. KG Method for removing an organic resin from a surface of a substrate

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US6218087B1 (en) * 1999-06-07 2001-04-17 Tokyo Ohka Kogyo Co., Ltd. Photoresist stripping liquid composition and a method of stripping photoresists using the same
EP1150172A2 (en) * 2000-02-25 2001-10-31 Shipley Company LLC Method of removing antireflective compositions
CN1447754A (zh) * 2000-07-10 2003-10-08 Ekc技术公司 用于清洁半导体设备上有机残余物和等离子蚀刻残余物的组合物
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Also Published As

Publication number Publication date
EP1877870A1 (en) 2008-01-16
CA2605236A1 (en) 2006-10-26
KR20060110712A (ko) 2006-10-25
MY145299A (en) 2012-01-13
SG161273A1 (en) 2010-05-27
JP2008537182A (ja) 2008-09-11
PL1877870T3 (pl) 2011-07-29
WO2006112994A1 (en) 2006-10-26
EP1877870B1 (en) 2011-02-16
NO20075935L (no) 2008-01-18
ZA200706296B (en) 2008-09-25
KR101088568B1 (ko) 2011-12-05
DK1877870T3 (da) 2011-05-02
ES2361271T3 (es) 2011-06-15
IL186565A0 (en) 2008-01-20
US20080280235A1 (en) 2008-11-13
PT1877870E (pt) 2011-05-24
JP4677030B2 (ja) 2011-04-27
BRPI0610852A2 (pt) 2010-08-03
TW200700549A (en) 2007-01-01
CN101164016A (zh) 2008-04-16
ATE498859T1 (de) 2011-03-15
DE602006020125D1 (de) 2011-03-31

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Owner name: ANWANTUO SPECIAL MATERIAL CO., LTD.

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