CN101151712A - 从衬底去除氧化物的方法和系统 - Google Patents

从衬底去除氧化物的方法和系统 Download PDF

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Publication number
CN101151712A
CN101151712A CNA2006800108240A CN200680010824A CN101151712A CN 101151712 A CN101151712 A CN 101151712A CN A2006800108240 A CNA2006800108240 A CN A2006800108240A CN 200680010824 A CN200680010824 A CN 200680010824A CN 101151712 A CN101151712 A CN 101151712A
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substrate
silicon
temperature
gas
containing gas
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Chinese (zh)
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安东尼·迪朴
艾伦·约翰·利思
吴昇昊
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
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    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
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    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
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    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
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    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H10P14/6905—Inorganic materials containing silicon being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H
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    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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    • H10P70/00—Cleaning of wafers, substrates or parts of devices
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    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
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    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
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    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CNA2006800108240A 2005-03-31 2006-03-23 从衬底去除氧化物的方法和系统 Pending CN101151712A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/094,462 US7524769B2 (en) 2005-03-31 2005-03-31 Method and system for removing an oxide from a substrate
US11/094,462 2005-03-31

Publications (1)

Publication Number Publication Date
CN101151712A true CN101151712A (zh) 2008-03-26

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US (1) US7524769B2 (https=)
JP (1) JP5015134B2 (https=)
KR (1) KR101238152B1 (https=)
CN (1) CN101151712A (https=)
WO (1) WO2006104819A2 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102326229A (zh) * 2009-03-05 2012-01-18 应用材料公司 沉积具有低界面污染的层的方法
CN103597581A (zh) * 2011-06-10 2014-02-19 应用材料公司 使用热丝化学气相沉积(hwcvd)腔室清洁基板表面的方法
CN107723790A (zh) * 2016-08-12 2018-02-23 上海新昇半导体科技有限公司 一种外延设备、设备制作方法及外延方法
CN115241052A (zh) * 2016-04-29 2022-10-25 朗姆研究公司 使用ale和选择性沉积蚀刻衬底

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US20080153266A1 (en) * 2006-12-21 2008-06-26 Interuniversitair Microeletronica Centrum (Imec) Vzw Method to improve the selective epitaxial growth (seg) process
US20080242062A1 (en) * 2007-03-31 2008-10-02 Lucent Technologies Inc. Fabrication of diverse structures on a common substrate through the use of non-selective area growth techniques
US8852674B2 (en) * 2010-11-12 2014-10-07 Applied Materials, Inc. Method for segregating the alloying elements and reducing the residue resistivity of copper alloy layers
US20140011339A1 (en) * 2012-07-06 2014-01-09 Applied Materials, Inc. Method for removing native oxide and residue from a germanium or iii-v group containing surface
KR102245729B1 (ko) * 2013-08-09 2021-04-28 어플라이드 머티어리얼스, 인코포레이티드 에피택셜 성장 이전에 기판 표면을 사전 세정하기 위한 방법 및 장치
JP6379184B2 (ja) 2013-09-25 2018-08-22 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 基板をボンディングする装置および方法
US9735009B2 (en) * 2014-09-15 2017-08-15 Applied Materials, Inc. Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high K at channel
US9653291B2 (en) 2014-11-13 2017-05-16 Applied Materials, Inc. Method for removing native oxide and residue from a III-V group containing surface
US20170018427A1 (en) * 2015-07-15 2017-01-19 Applied Materials, Inc. Method of selective epitaxy
US9972511B2 (en) * 2015-10-01 2018-05-15 Applied Materials, Inc. Substrate processing apparatus and methods
US20220108888A1 (en) * 2020-10-04 2022-04-07 Applied Materials, Inc. Selective Deposition of Germanium
US11830734B2 (en) * 2021-05-19 2023-11-28 Applied Materials, Inc. Thermal deposition of silicon-germanium

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US5089441A (en) * 1990-04-16 1992-02-18 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafers
JPH04336426A (ja) * 1991-05-14 1992-11-24 Fujitsu Ltd 半導体装置の製造方法
JPH05217921A (ja) * 1991-09-13 1993-08-27 Motorola Inc 材料膜のエピタキシアル成長を行うための温度制御された処理
US5352636A (en) * 1992-01-16 1994-10-04 Applied Materials, Inc. In situ method for cleaning silicon surface and forming layer thereon in same chamber
JPH05259091A (ja) * 1992-03-13 1993-10-08 Toshiba Corp 半導体装置の製造方法
JPH0697140A (ja) * 1992-09-14 1994-04-08 Toshiba Corp 半導体基板処理方法
US5510277A (en) * 1994-06-29 1996-04-23 At&T Corp. Surface treatment for silicon substrates
JP3533583B2 (ja) * 1994-07-25 2004-05-31 富士通株式会社 水素プラズマダウンフロー装置の洗浄方法
US7053002B2 (en) * 1998-12-04 2006-05-30 Applied Materials, Inc Plasma preclean with argon, helium, and hydrogen gases
US6365516B1 (en) * 2000-01-14 2002-04-02 Advanced Micro Devices, Inc. Advanced cobalt silicidation with in-situ hydrogen plasma clean
US6613695B2 (en) * 2000-11-24 2003-09-02 Asm America, Inc. Surface preparation prior to deposition
JP4138269B2 (ja) 2001-04-26 2008-08-27 株式会社日立国際電気 半導体製造装置
JP2003229425A (ja) * 2002-02-05 2003-08-15 Hitachi Kokusai Electric Inc 基板処理装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102326229A (zh) * 2009-03-05 2012-01-18 应用材料公司 沉积具有低界面污染的层的方法
CN102326229B (zh) * 2009-03-05 2014-03-12 应用材料公司 沉积具有低界面污染的层的方法
TWI508150B (zh) * 2009-03-05 2015-11-11 應用材料股份有限公司 用於沉積具有低界面汙染之層的方法
CN103597581A (zh) * 2011-06-10 2014-02-19 应用材料公司 使用热丝化学气相沉积(hwcvd)腔室清洁基板表面的方法
CN103597581B (zh) * 2011-06-10 2016-12-21 应用材料公司 使用热丝化学气相沉积(hwcvd)腔室清洁基板表面的方法
CN115241052A (zh) * 2016-04-29 2022-10-25 朗姆研究公司 使用ale和选择性沉积蚀刻衬底
CN107723790A (zh) * 2016-08-12 2018-02-23 上海新昇半导体科技有限公司 一种外延设备、设备制作方法及外延方法
CN107723790B (zh) * 2016-08-12 2020-07-07 上海新昇半导体科技有限公司 一种外延设备、设备制作方法及外延方法

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Publication number Publication date
US20060228900A1 (en) 2006-10-12
WO2006104819A2 (en) 2006-10-05
US7524769B2 (en) 2009-04-28
KR101238152B1 (ko) 2013-02-28
JP5015134B2 (ja) 2012-08-29
KR20080002855A (ko) 2008-01-04
JP2008538161A (ja) 2008-10-09
WO2006104819A3 (en) 2007-08-16

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