CN101150163A - LED chip and thermal sediment direct encapsulated heat radiation component and its making device and method - Google Patents

LED chip and thermal sediment direct encapsulated heat radiation component and its making device and method Download PDF

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Publication number
CN101150163A
CN101150163A CNA2007101445816A CN200710144581A CN101150163A CN 101150163 A CN101150163 A CN 101150163A CN A2007101445816 A CNA2007101445816 A CN A2007101445816A CN 200710144581 A CN200710144581 A CN 200710144581A CN 101150163 A CN101150163 A CN 101150163A
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heat sink
led chip
fastening
metal film
chip
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CNA2007101445816A
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CN100508230C (en
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王春青
孔令超
田艳红
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Harbin Institute of Technology
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Harbin Institute of Technology
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Abstract

This invention relates to a radiating component packaging LED chips and heat sink directly, in which, the package structure and a method includes: a solder layer is welded between a LED chip plated with a chip metal film and a rectangular tubular heat sink, the device is composed of locating boxes, fixed plywoods and fastening components, in which, a set of locating boxes for placing grooves of a LED chip, a pair of fastening components are installed on both side walls corresponding to the locating boxes and the fixed plywoods are two rectangular thin plates opened wth two horseshoe notches corresponding to the fastening components at the wide edges.

Description

The radiating subassembly of led chip and heat sink direct encapsulation and manufacturing equipment thereof and method
Technical field
The present invention relates to a kind of led chip and heat sink encapsulation technology field.
Background technology
The LED full name is a semiconductor light-emitting-diode, can directly electric energy be converted into luminous energy.Be characterized in characteristics such as low in energy consumption, high brightness, beautiful in colour, anti-vibration, life-span length, cold light source.The LED product is widely used, and along with the increasing substantially of luminous efficiency and power, is that the various lamp decoration products of light source must replace incandescent lamp in 21 century with LED especially.
Semiconductor components and devices is all very responsive to temperature usually, for great power LED, generally more than the hundreds of milliampere, the temperature rise of P-N knot is very obvious for drive current, and many application need a plurality of great power LED dense arrangement are used, and its heat dissipation problem is especially outstanding.Long-time heating or too high temperature all can bring stability and useful life problem.If brightness is 100 when establishing the P-N knot surface temperature of LED and being 25 ℃ (exemplary operation temperature), brightness just reduced to 80 when then temperature was increased to 75 ℃, during to 125 ℃ brightness just surplus 60, brightness just only surplus 40 during to 175 ℃.Knot surface temperature and luminosity are the linear relationships that is negative.Temperature is linear to the influence of brightness, but the influence in life-span just is index, uses LED that nearly 20,000 hours life-span is arranged below 50 ℃ if remain on, and then remains 10,000 hours in the time of 75 ℃, remains 5,000 hours in the time of 100 ℃, remains 1,000 hour in the time of 150 ℃.Therefore, heat dissipation problem is to hinder high-power LED illumination to use a big technical barrier of popularizing rapidly.
Traditional power LED encapsulating structure at first is installed in chip 1a on the substrate 4a as shown in Figure 1, and substrate 4a is bonded in again on the encapsulation 6a then.Encapsulation 6a utilizes thermal interfacial material 7a to be bonded on the heat sink 2a.If adopt this structure, substrate, tack coat and encapsulated layer become the major part that hinders chip cooling.Thermal resistance from the chip to the external heat sink is usually greater than 20 ℃/W.
Summary of the invention
The present invention has the problem that is difficult to dispel the heat that exists in the LED encapsulating structure now in order to solve, and has proposed radiating subassembly and the manufacturing equipment and the method for a kind of led chip and heat sink direct encapsulation.
The radiating subassembly of led chip and heat sink direct encapsulation by led chip 1, rectangular tubular is heat sink 2, chip metal film 3, heat sink metal film 4 and solder layer 5 are formed; Lower surface at led chip 1 is coated with chip metal film 3, is coated with heat sink metal film 4 at the upper surface of rectangular tubular heat sink 2, and solder layer 5 places between chip metal film 3 and the heat sink metal film 4.
Making the equipment of the radiating subassembly of led chip and heat sink direct encapsulation is made up of positioning box 6, strap 7 and fastening assembly 8, the box body inner bottom surface of positioning box 6 is provided with one group of chip groove 6-1 that places led chip 1, be separately installed with a pair of fastening assembly 8 on positioning box 6 corresponding two sidewalls, fastening assembly 8 is made up of fastening gudgeon 8-1, fastening bolt 8-2, fastening pad 8-3, fastening spring 8-4 and fastening nut 8-5; Fastening gudgeon 8-1 is fixed on the sidewall of positioning box 6, the end of fastening bolt 8-2 is fixed on the fastening gudgeon 8-1, the end to end of fastening bolt 8-2 is disposed with fastening pad 8-3, fastening spring 8-4 and fastening nut 8-5, binding clip 7 is the rectangle thin plate that two broadside edges have shape of a hoof breach 7-1, and shape of a hoof breach 7-1 position is corresponding with the position of fastening assembly 8.
The step of the radiating subassembly method of manufacturing led chip and heat sink direct encapsulation is as follows:
Step 1: the first heat sink metal film 4 of plating on each solder joint of upper surface predeterminated position of rectangular tubular heat sink 2, and then plating or printing go up solder layer 5, forms default solder bump;
Step 2: on the solder bump of solder layer 5, be coated with weld-aiding cream;
Step 3: the led chip 1 that respectively lower surface is coated with chip metal film 3 aligns bonding with solder bump;
Step 4: the rectangular tubular heat sink 2 that will be covered with led chip 1 places reflow soldering, heating soldering;
Step 5: the surface of the led chip 1 that welds is covered with the lead plate of hollow out, finishes manufacturing.
For the encapsulation and the application of led chip, reduced the thermal resistance of product, the heat that the P-N knot is produced can distribute as early as possible, not only can improve saturation current, the luminous efficiency of product, has also improved reliability of products and life-span simultaneously.In design, avoid in passage of heat, producing the heat radiation bottleneck, guarantee that heat distributes from inside to outside fast.Based on previous studies, the present invention has removed ceramic substrate and the elargol tack coat or the pad of high thermal resistance, directly with the bare chip soldering on heat sink, this has just fundamentally solved the bottleneck problem of heat radiation.Designed heat sink of the present invention is rectangular tubular, and it more conveniently combines with other members of light fixture on the one hand, and convenient on the other hand heat sink the linking together of organizing had both made things convenient for the natural convection air heat radiation more, can utilize its pipeline to carry out forced air cooling again.The present invention is applicable to single-chip and multiple chips array encapsulation.
Description of drawings
Fig. 1 is that cuing open of traditional typical led chip encapsulating structure attempted; Fig. 2 is the structural representation of the radiating subassembly of led chip of the present invention and heat sink direct encapsulation; Fig. 3 is the structural representation of the radiating subassembly equipment of manufacturing led chip of the present invention and heat sink direct encapsulation; Fig. 4 is the flow chart of the radiating subassembly method of manufacturing led chip of the present invention and heat sink direct encapsulation.
Embodiment
Embodiment one: in conjunction with Fig. 2 present embodiment is described, the led chip in the present embodiment and the radiating subassembly of heat sink direct encapsulation by led chip 1, rectangular tubular is heat sink 2, chip metal film 3, heat sink metal film 4 and solder layer 5 are formed; Lower surface at led chip 1 is coated with chip metal film 3, upper surface in rectangular tubular heat sink 2 is coated with heat sink metal film 4, solder layer 5 places between chip metal film 3 and the heat sink metal film 4, by chip metal film 3, heat sink metal film 4 and solder layer 5 led chip 1 and rectangular tubular heat sink 2 is connected.
Embodiment two: in conjunction with Fig. 2 present embodiment is described, present embodiment and embodiment one difference are that rectangular tubular heat sink 2 adopts copper or aluminum metallic material.Other composition is identical with embodiment one with connected mode.
Embodiment three: in conjunction with Fig. 2 present embodiment is described, present embodiment and embodiment one difference are that chip metal film 3 and heat sink metal film 4 adopt golden Au or silver-colored Ag material.Other composition is identical with embodiment one with connected mode.
Embodiment four: in conjunction with Fig. 2 present embodiment is described, present embodiment and embodiment one difference are that solder layer 5 adopts little tin silver SnAg, SAC SnAgCu of thermal resistance or the plumbous SnPb solder alloy of tin, and dense structure, and heat conduction is unobstructed.Other composition is identical with embodiment one with connected mode.
Embodiment five: in conjunction with Fig. 2 present embodiment is described, present embodiment and embodiment one difference are that the gross thickness of chip metal film 3, heat sink metal film 4 and solder layer 5 is 50~150 μ m.Other composition is identical with embodiment one with connected mode.
Embodiment six: present embodiment is described in conjunction with Fig. 3, present embodiment is made the device of the radiating subassembly of led chip and heat sink direct encapsulation and is made up of positioning box 6, strap 7 and fastening assembly 8, the box body inner bottom surface of positioning box 6 is provided with one group of chip groove 6-1 that places led chip 1, be separately installed with a pair of fastening assembly 8 on positioning box 6 corresponding two sidewalls, fastening assembly 8 is made up of fastening gudgeon 8-1, fastening bolt 8-2, fastening pad 8-3, fastening spring 8-4 and fastening nut 8-5; Fastening gudgeon 8-1 is fixed on the sidewall of positioning box 6, the end of fastening bolt 8-2 is fixed on the fastening gudgeon 8-1, the end to end of fastening bolt 8-2 is disposed with fastening pad 8-3, fastening spring 8-4 and fastening nut 8-5, strap 7 is the rectangle thin plate that two broadside edges have shape of a hoof breach 7-1, and shape of a hoof breach 7-1 position is corresponding with the position of fastening assembly 8.
Embodiment seven: in conjunction with Fig. 4 present embodiment is described, present embodiment is that to make the step of radiating subassembly method of led chip and heat sink direct encapsulation as follows:
Step 1: the first heat sink metal film 4 of plating on each solder joint of upper surface predeterminated position of rectangular tubular heat sink 2, and then plating or printing go up solder layer 5, forms default solder bump;
Step 2: on the solder bump of solder layer 5, be coated with weld-aiding cream;
Step 3: the led chip 1 that respectively lower surface is coated with chip metal film 3 aligns bonding with solder bump;
Step 4: the rectangular tubular heat sink 2 that will be covered with led chip 1 places reflow soldering, heating soldering;
Step 5: the surface of the led chip 1 that welds is covered with the lead plate of hollow out, finishes manufacturing.
Embodiment eight: present embodiment is described in conjunction with Fig. 3, the step 3 that is present embodiment and embodiment six differences adopts the device of the radiating subassembly of making led chip and heat sink direct encapsulation to weld, lower surface is coated with chip metal film 3 to be put upside down in the chip groove 6-1, the rectangular tubular of handling well heat sink 2 is put into positioning box 6, make led chip 1 and solder bump align bonding, be placed on the rectangular tubular heat sink 2 with strap 7 again, two sides fastening assembly 8 is lifted, lean in the shape of a hoof breach 7-1 of strap 7, push down strap 7 with fastening pad 8-3, screw fastening nut 8-5.Other composition is identical with embodiment one with connected mode.

Claims (8)

1.LED the radiating subassembly of chip and heat sink direct encapsulation, it is characterized in that it by led chip (1), rectangular tubular is heat sink (2), chip metal film (3), heat sink metal film (4) and solder layer (5) are formed; Lower surface at led chip (1) is coated with chip metal film (3), is coated with heat sink metal film (4) at the upper surface of rectangular tubular heat sink (2), and solder layer (5) places between chip metal film (3) and the heat sink metal film (4).
2. the radiating subassembly of led chip according to claim 1 and heat sink direct encapsulation is characterized in that rectangular tubular heat sink (2) adopts copper or aluminum metallic material.
3. the radiating subassembly of led chip according to claim 1 and heat sink direct encapsulation is characterized in that chip metal film (3) and heat sink metal film (4) adopt golden Au or silver-colored Ag material.
4. the radiating subassembly of led chip according to claim 1 and heat sink direct encapsulation is characterized in that solder layer (5) adopts tin silver SnAg, SAC SnAgCu or the plumbous SnPb solder alloy of tin.
5. the radiating subassembly of led chip according to claim 1 and heat sink direct encapsulation, the gross thickness that it is characterized in that chip metal film (3), heat sink metal film (4) and solder layer (5) is 50~150 μ m.
6. make the equipment of the radiating subassembly of led chip and heat sink direct encapsulation, it is characterized in that it is made up of positioning box (6), strap (7) and fastening assembly (8), the box body inner bottom surface of positioning box (6) is provided with one group of chip groove (6-1) of placing led chip (1), be separately installed with a pair of fastening assembly (8) on corresponding two sidewalls of positioning box (6), fastening assembly (8) is made up of fastening gudgeon (8-1), fastening bolt (8-2), fastening pad (8-3), fastening spring (8-4) and fastening nut (8-5); Fastening gudgeon (8-1) is fixed on the sidewall of positioning box (6), one end of fastening bolt (8-2) is fixed on the fastening gudgeon (8-1), the end to end of fastening bolt (8-2) is disposed with fastening pad (8-3), fastening spring (8-4) and fastening nut (8-5), strap (7) is the rectangle thin plate that two broadside edges have shape of a hoof breach (7-1), and shape of a hoof breach (7-1) position is corresponding with the position of fastening assembly (8).
7. make the method for the radiating subassembly of led chip and heat sink direct encapsulation, it is characterized in that the step of its method is as follows:
Step 1: first plating heat sink metal film (4) on each solder joint of upper surface predeterminated position of rectangular tubular heat sink (2), and then plating or printing go up solder layer (5), forms default solder bump;
Step 2: on the solder bump of solder layer (5), be coated with weld-aiding cream;
Step 3: the led chip (1) that respectively lower surface is coated with chip metal film (3) aligns bonding with solder bump;
Step 4: the rectangular tubular heat sink (2) that will be covered with led chip (1) places reflow soldering, heating soldering;
Step 5: the surface of the led chip (1) that welds is covered with the lead plate of hollow out, finishes manufacturing.
8. the method for the radiating subassembly of manufacturing led chip according to claim 6 and heat sink direct encapsulation, it is characterized in that step 3 adopts the device of the radiating subassembly of making led chip and heat sink direct encapsulation to weld, lower surface is coated with chip metal film (3) to be put upside down in the chip groove (6-1), the rectangular tubular of handling well heat sink (2) is put into positioning box (6), make led chip (1) and solder bump align bonding, use strap (7) to be placed on the rectangular tubular heat sink (2) again, two sides fastening assembly (8) is lifted, lean in the shape of a hoof breach (7-1) of strap (7), push down strap (7) with fastening pad (8-3), screw fastening nut (8-5).
CNB2007101445816A 2007-11-09 2007-11-09 LED chip and thermal sediment direct encapsulated heat radiation component and its making device and method Expired - Fee Related CN100508230C (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101867005A (en) * 2010-06-13 2010-10-20 天津市卓辉电子有限公司 Method for bonding a plurality of LED chips on thermal conducting substrate
CN102157630A (en) * 2010-12-28 2011-08-17 哈尔滨工业大学 Single-substrate multi-chipset high-power LED (Light-Emitting Diode) encapsulation one-step bonding method
CN102179594A (en) * 2011-05-18 2011-09-14 中国科学院长春光学精密机械与物理研究所 Positioning device for electrode welding of semiconductor laser
CN102194963A (en) * 2010-03-10 2011-09-21 杭州妙影微电子有限公司 Low thermal resistance light-emitting diode (LED) and packaging method thereof
CN102244022A (en) * 2011-04-26 2011-11-16 哈尔滨工业大学 Manufacturing method of single intermetallic compound micro-interconnecting structure of flip chip
CN111029894A (en) * 2019-12-27 2020-04-17 海特光电有限责任公司 Semiconductor laser and packaging method thereof
CN113199103A (en) * 2021-06-11 2021-08-03 哈尔滨工业大学 Electromagnetic induction quick connection method suitable for high-power electronic device or assembly

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102194963A (en) * 2010-03-10 2011-09-21 杭州妙影微电子有限公司 Low thermal resistance light-emitting diode (LED) and packaging method thereof
CN101867005A (en) * 2010-06-13 2010-10-20 天津市卓辉电子有限公司 Method for bonding a plurality of LED chips on thermal conducting substrate
CN102157630A (en) * 2010-12-28 2011-08-17 哈尔滨工业大学 Single-substrate multi-chipset high-power LED (Light-Emitting Diode) encapsulation one-step bonding method
CN102244022A (en) * 2011-04-26 2011-11-16 哈尔滨工业大学 Manufacturing method of single intermetallic compound micro-interconnecting structure of flip chip
CN102179594A (en) * 2011-05-18 2011-09-14 中国科学院长春光学精密机械与物理研究所 Positioning device for electrode welding of semiconductor laser
CN111029894A (en) * 2019-12-27 2020-04-17 海特光电有限责任公司 Semiconductor laser and packaging method thereof
CN113199103A (en) * 2021-06-11 2021-08-03 哈尔滨工业大学 Electromagnetic induction quick connection method suitable for high-power electronic device or assembly
CN113199103B (en) * 2021-06-11 2022-04-19 哈尔滨工业大学 Electromagnetic induction quick connection method suitable for high-power electronic device or assembly

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