CN101150163A - Heat dissipation component directly packaged with LED chip and heat sink, manufacturing equipment and method thereof - Google Patents
Heat dissipation component directly packaged with LED chip and heat sink, manufacturing equipment and method thereof Download PDFInfo
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Abstract
一种LED芯片与热沉直接封装的散热组件及其制造设备和方法,本发明涉及LED芯片与热沉封装技术领域。它解决了现有LED封装结构中存在的难于散热的问题。封装结构和方法为在镀有芯片金属膜(3)的LED芯片(1)和镀有热沉金属膜(4)的矩形管状热沉(2)之间焊有钎料层(5)。制造装置由定位盒(6)、固定夹板(7)和紧固组件(8)组成,盒体内部底面设置有一组放置LED芯片(1)的芯片凹槽(6-1)的定位盒(6),定位盒(6)相对应的两个侧壁上分别安装有一对紧固组件(8),固定夹板(7)为两个宽边边缘处分别开有与紧固组件(8)的位置相对应马蹄形缺口(7-1)的长方形薄板。本发明降低产品的热阻,使热量能尽快散发出去,提高产品的饱和电流、发光效率,同时也提高了产品的可靠性和寿命。
A heat dissipation component directly packaged with an LED chip and a heat sink, and a manufacturing device and method thereof, and the invention relates to the technical field of LED chip and heat sink packaging. It solves the problem of difficult heat dissipation existing in the existing LED packaging structure. The packaging structure and method are as follows: a solder layer (5) is welded between an LED chip (1) coated with a chip metal film (3) and a rectangular tubular heat sink (2) coated with a heat sink metal film (4). The manufacturing device is composed of a positioning box (6), a fixing splint (7) and a fastening assembly (8), and a set of positioning boxes (6) for placing chip grooves (6-1) of LED chips (1) are arranged on the inner bottom surface of the box body. ), a pair of fastening components (8) are respectively installed on the corresponding two side walls of the positioning box (6), and the fixed splint (7) is respectively provided with the positions of the fastening components (8) at the edges of the two wide sides. A rectangular thin plate corresponding to the horseshoe-shaped notch (7-1). The invention reduces the thermal resistance of the product, so that the heat can be dissipated as soon as possible, improves the saturation current and luminous efficiency of the product, and also improves the reliability and life of the product.
Description
技术领域 technical field
本发明涉及一种LED芯片与热沉封装技术领域。The invention relates to the technical field of LED chip and heat sink packaging.
背景技术 Background technique
LED全称为半导体发光二极管,可直接将电能转化为光能。其特点是功耗低、高亮度、色彩艳丽、抗震动、寿命长、冷光源等特点。LED产品应用广泛,尤其是随着发光效率和功率的大幅增长,以LED为光源的各种灯饰产品在21世纪必然取代白炽灯。The full name of LED is semiconductor light-emitting diode, which can directly convert electrical energy into light energy. It is characterized by low power consumption, high brightness, bright colors, anti-vibration, long life, cold light source and so on. LED products are widely used, especially with the substantial increase in luminous efficiency and power, various lighting products using LED as light source will inevitably replace incandescent lamps in the 21st century.
半导体元器件通常对温度都十分敏感,对于大功率LED来说,驱动电流一般在几百毫安以上,P-N结的温升非常明显,而许多应用又需要将多个大功率LED密集排列使用,其散热问题尤其突出。长时间发热或过高的温度都会带来稳定性和使用寿命问题。若设LED的P-N结面温度为25℃(典型工作温度)时亮度为100,则温度升高至75℃时亮度就降至80,到125℃时亮度就剩60,到175℃时亮度就只剩40。结面温度与发光亮度是呈负的线性关系。温度对亮度的影响是线性的,但对寿命的影响就呈指数性,若保持在50℃以下使用LED有近20,000小时的寿命,75℃时则剩10,000小时,100℃时剩5,000小时,150℃时剩1,000小时。因此,散热问题是阻碍大功率LED照明应用迅速普及的一大技术难题。Semiconductor components are usually very sensitive to temperature. For high-power LEDs, the driving current is generally above several hundred milliamps, and the temperature rise of the P-N junction is very obvious. Many applications require multiple high-power LEDs to be used in dense arrays. Its heat dissipation problem is particularly prominent. Prolonged heating or high temperature will bring stability and service life problems. If the P-N junction temperature of the LED is 25°C (typical operating temperature), the brightness is 100, then the brightness will drop to 80 when the temperature rises to 75°C, the brightness will be 60 when the temperature reaches 125°C, and the brightness will be 175°C. Only 40 left. There is a negative linear relationship between junction temperature and luminance. The effect of temperature on brightness is linear, but the effect on life is exponential. If the LED is kept below 50°C, it will have a lifespan of nearly 20,000 hours; at 75°C, there will be 10,000 hours left; 1,000 hours left at ℃. Therefore, the problem of heat dissipation is a major technical problem hindering the rapid popularization of high-power LED lighting applications.
传统的功率LED封装结构如图1所示,首先将芯片1a安装在基板4a上,然后基板4a又粘结在封装6a上。封装6a利用热界面材料7a粘结于热沉2a上。如果采用这种结构,基板、粘结层以及封装层成为阻碍芯片散热的主要部分。从芯片到外部热沉的热阻通常大于20℃/W。The traditional package structure of power LED is shown in Fig. 1. First, the chip 1a is mounted on the
发明内容 Contents of the invention
本发明为了解决现有LED封装结构中存在的难于散热的问题,而提出了一种LED芯片与热沉直接封装的散热组件及其制造设备和方法。In order to solve the problem of difficult heat dissipation in the existing LED packaging structure, the present invention proposes a heat dissipation assembly in which an LED chip and a heat sink are directly packaged and its manufacturing equipment and method.
LED芯片与热沉直接封装的散热组件由LED芯片1、矩形管状热沉2、芯片金属膜3、热沉金属膜4和钎料层5组成;在LED芯片1的下表面镀有芯片金属膜3,在矩形管状热沉2的上表面镀有热沉金属膜4,钎料层5置于芯片金属膜3和热沉金属膜4之间。The heat dissipation assembly in which the LED chip and the heat sink are directly packaged is composed of an
制造LED芯片与热沉直接封装的散热组件的设备由定位盒6、固定夹板7和紧固组件8组成,定位盒6的盒体内部底面设置有一组放置LED芯片1的芯片凹槽6-1,定位盒6相对应的两个侧壁上分别安装有一对紧固组件8,紧固组件8由紧固耳轴8-1、紧固螺栓8-2、紧固垫片8-3、紧固弹簧8-4和紧固螺帽8-5组成;紧固耳轴8-1固定于定位盒6的侧壁上,紧固螺栓8-2的一端固定于紧固耳轴8-1上,紧固螺栓8-2的一端到另一端依次设置有紧固垫片8-3、紧固弹簧8-4和紧固螺帽8-5,紧固夹板7为两个宽边边缘处分别开有马蹄形缺口7-1的长方形薄板,马蹄形缺口7-1位置与紧固组件8的位置相对应。The equipment for manufacturing heat dissipation components directly packaged with LED chips and heat sinks is composed of a
制造LED芯片与热沉直接封装的散热组件方法的步骤如下:The steps of the method for manufacturing the heat dissipation component in which the LED chip and the heat sink are directly packaged are as follows:
步骤一:在矩形管状热沉2的上表面预设位置各焊点上先镀热沉金属膜4,然后再镀或印刷上钎料层5,形成预设的钎料凸点;Step 1: Plating a heat
步骤二:在钎料层5的钎料凸点上涂敷有助焊膏;Step 2: Coating solder paste on the solder bumps of the
步骤三:分别将下表面镀有芯片金属膜3的LED芯片1与钎料凸点对正粘合;Step 3: Align and bond the
步骤四:将布满LED芯片1的矩形管状热沉2置于回流焊炉中,加热钎焊;Step 4: Place the rectangular
步骤五:将焊好的LED芯片1的表面覆上镂空的引线板,完成制造。Step 5: Cover the surface of the soldered
对于LED芯片的封装和应用来说,降低了产品的热阻,使P-N结产生的热量能尽快散发出去,不仅可以提高产品的饱和电流、发光效率,同时也提高了产品的可靠性和寿命。在设计中避免在导热通道中产生散热瓶颈,确保热量从内到外快速散发。基于以往的研究结果,本发明去除了高热阻的陶瓷基板和银胶粘结层或垫片,直接将裸芯片钎焊在热沉上,这就从根本上解决了散热的瓶颈问题。本发明所设计的热沉为矩形管状,一方面它较方便与灯具其他构件相结合,另一方面方便多组热沉连接在一起,既方便了空气自然对流散热,又可利用其管道进行强迫风冷。本发明适用于单芯片和多芯片阵列封装。For the packaging and application of LED chips, the thermal resistance of the product is reduced, so that the heat generated by the P-N junction can be dissipated as soon as possible, which can not only improve the saturation current and luminous efficiency of the product, but also improve the reliability and life of the product. Avoid heat dissipation bottlenecks in the heat conduction channel in the design to ensure that heat is dissipated quickly from the inside to the outside. Based on previous research results, the present invention removes the high thermal resistance ceramic substrate and silver glue bonding layer or spacer, and directly brazes the bare chip on the heat sink, which fundamentally solves the bottleneck problem of heat dissipation. The heat sink designed in the present invention is in the shape of a rectangular tube. On the one hand, it is more convenient to combine with other components of the lamp. On the other hand, it is convenient to connect multiple sets of heat sinks together. wind cold. The invention is applicable to single-chip and multi-chip array packages.
附图说明 Description of drawings
图1是传统典型LED芯片封装结构的剖试图;图2是本发明的LED芯片与热沉直接封装的散热组件的结构示意图;图3是本发明的制造LED芯片与热沉直接封装的散热组件设备的结构示意图;图4是本发明的制造LED芯片与热沉直接封装的散热组件方法的流程图。Fig. 1 is a sectional view of a traditional typical LED chip packaging structure; Fig. 2 is a structural schematic diagram of a heat dissipation assembly directly packaged with an LED chip and a heat sink of the present invention; Fig. 3 is a heat dissipation assembly directly packaged with an LED chip and a heat sink of the present invention Schematic diagram of the structure of the device; FIG. 4 is a flow chart of the method for manufacturing a heat dissipation assembly in which LED chips and heat sinks are directly packaged according to the present invention.
具体实施方式 Detailed ways
具体实施方式一:结合图2说明本实施方式,本实施方式中的LED芯片与热沉直接封装的散热组件由LED芯片1、矩形管状热沉2、芯片金属膜3、热沉金属膜4和钎料层5组成;在LED芯片1的下表面镀有芯片金属膜3,在矩形管状热沉2的上表面镀有热沉金属膜4,钎料层5置于芯片金属膜3和热沉金属膜4之间,通过芯片金属膜3、热沉金属膜4和钎料层5将LED芯片1和矩形管状热沉2连接。Specific Embodiment 1: This embodiment is described in conjunction with FIG. 2. The heat dissipation assembly in which the LED chip and the heat sink are directly packaged in this embodiment consists of an
具体实施方式二:结合图2说明本实施方式,本实施方式与具体实施方式一不同点在于矩形管状热沉2采用铜或铝金属材料。其它组成和连接方式与具体实施方式一相同。Embodiment 2: This embodiment is described with reference to FIG. 2 . The difference between this embodiment and
具体实施方式三:结合图2说明本实施方式,本实施方式与具体实施方式一不同点在于芯片金属膜3和热沉金属膜4采用金Au或银Ag材料。其它组成和连接方式与具体实施方式一相同。Embodiment 3: This embodiment is described with reference to FIG. 2 . The difference between this embodiment and Embodiment 1 is that the
具体实施方式四:结合图2说明本实施方式,本实施方式与具体实施方式一不同点在于钎料层5采用热阻小的锡银SnAg、锡银铜SnAgCu或锡铅SnPb合金钎料,且组织致密,热传导通畅。其它组成和连接方式与具体实施方式一相同。Embodiment 4: This embodiment is described in conjunction with FIG. 2. The difference between this embodiment and
具体实施方式五:结合图2说明本实施方式,本实施方式与具体实施方式一不同点在于芯片金属膜3、热沉金属膜4和钎料层5的总厚度为50~150μm。其它组成和连接方式与具体实施方式一相同。Embodiment 5: This embodiment is described with reference to FIG. 2 . The difference between this embodiment and
具体实施方式六:结合图3说明本实施方式,本实施方式制造LED芯片与热沉直接封装的散热组件的装置由定位盒6、固定夹板7和紧固组件8组成,定位盒6的盒体内部底面设置有一组放置LED芯片1的芯片凹槽6-1,定位盒6相对应的两个侧壁上分别安装有一对紧固组件8,紧固组件8由紧固耳轴8-1、紧固螺栓8-2、紧固垫片8-3、紧固弹簧8-4和紧固螺帽8-5组成;紧固耳轴8-1固定于定位盒6的侧壁上,紧固螺栓8-2的一端固定于紧固耳轴8-1上,紧固螺栓8-2的一端到另一端依次设置有紧固垫片8-3、紧固弹簧8-4和紧固螺帽8-5,固定夹板7为两个宽边边缘处分别开有马蹄形缺口7-1的长方形薄板,马蹄形缺口7-1位置与紧固组件8的位置相对应。Specific Embodiment 6: This embodiment is described in conjunction with FIG. 3. The device for manufacturing a heat dissipation assembly in which an LED chip and a heat sink are directly packaged in this embodiment is composed of a
具体实施方式七:结合图4说明本实施方式,本实施方式是制造LED芯片与热沉直接封装的散热组件方法的步骤如下:Specific Embodiment 7: This embodiment is described in conjunction with FIG. 4 . This embodiment is a method for manufacturing a heat dissipation component directly packaged with an LED chip and a heat sink. The steps are as follows:
步骤一:在矩形管状热沉2的上表面预设位置各焊点上先镀热沉金属膜4,然后再镀或印刷上钎料层5,形成预设的钎料凸点;Step 1: Plating a heat
步骤二:在钎料层5的钎料凸点上涂敷有助焊膏;Step 2: Coating solder paste on the solder bumps of the
步骤三:分别将下表面镀有芯片金属膜3的LED芯片1与钎料凸点对正粘合;Step 3: Align and bond the
步骤四:将布满LED芯片1的矩形管状热沉2置于回流焊炉中,加热钎焊;Step 4: Place the rectangular
步骤五:将焊好的LED芯片1的表面覆上镂空的引线板,完成制造。Step 5: Cover the surface of the soldered
具体实施方式八:结合图3说明本实施方式,本实施方式与具体实施方式六不同点在于步骤三采用制造LED芯片与热沉直接封装的散热组件的装置进行焊接,将下表面镀有芯片金属膜3倒放入芯片凹槽6-1内,将处理好的矩形管状热沉2放入定位盒6中,使LED芯片1与钎料凸点对正粘合,再用固定夹板7盖于矩形管状热沉2上,将两面紧固组件8抬起,靠入固定夹板7的马蹄形缺口7-1内,用紧固垫片8-3压住固定夹板7,旋紧紧固螺帽8-5。其它组成和连接方式与具体实施方式一相同。Embodiment 8: This embodiment is described in conjunction with FIG. 3 . The difference between this embodiment and
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| CN101867005A (en) * | 2010-06-13 | 2010-10-20 | 天津市卓辉电子有限公司 | Method for bonding a plurality of LED chips on thermal conducting substrate |
| CN102157630A (en) * | 2010-12-28 | 2011-08-17 | 哈尔滨工业大学 | Single-substrate multi-chipset high-power LED (Light-Emitting Diode) encapsulation one-step bonding method |
| CN102179594A (en) * | 2011-05-18 | 2011-09-14 | 中国科学院长春光学精密机械与物理研究所 | Positioning device for electrode welding of semiconductor laser |
| CN102194963A (en) * | 2010-03-10 | 2011-09-21 | 杭州妙影微电子有限公司 | Low thermal resistance light-emitting diode (LED) and packaging method thereof |
| CN102244022A (en) * | 2011-04-26 | 2011-11-16 | 哈尔滨工业大学 | Manufacturing method of single intermetallic compound micro-interconnecting structure of flip chip |
| CN111029894A (en) * | 2019-12-27 | 2020-04-17 | 海特光电有限责任公司 | Semiconductor laser and packaging method thereof |
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| WO2024114165A1 (en) * | 2022-11-28 | 2024-06-06 | 成都辰显光电有限公司 | Drive backplane, display panel, and preparation method for drive backplane |
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- 2007-11-09 CN CNB2007101445816A patent/CN100508230C/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102194963A (en) * | 2010-03-10 | 2011-09-21 | 杭州妙影微电子有限公司 | Low thermal resistance light-emitting diode (LED) and packaging method thereof |
| CN101867005A (en) * | 2010-06-13 | 2010-10-20 | 天津市卓辉电子有限公司 | Method for bonding a plurality of LED chips on thermal conducting substrate |
| CN102157630A (en) * | 2010-12-28 | 2011-08-17 | 哈尔滨工业大学 | Single-substrate multi-chipset high-power LED (Light-Emitting Diode) encapsulation one-step bonding method |
| CN102244022A (en) * | 2011-04-26 | 2011-11-16 | 哈尔滨工业大学 | Manufacturing method of single intermetallic compound micro-interconnecting structure of flip chip |
| CN102179594A (en) * | 2011-05-18 | 2011-09-14 | 中国科学院长春光学精密机械与物理研究所 | Positioning device for electrode welding of semiconductor laser |
| CN111029894A (en) * | 2019-12-27 | 2020-04-17 | 海特光电有限责任公司 | Semiconductor laser and packaging method thereof |
| CN113199103A (en) * | 2021-06-11 | 2021-08-03 | 哈尔滨工业大学 | Electromagnetic induction quick connection method suitable for high-power electronic device or assembly |
| CN113199103B (en) * | 2021-06-11 | 2022-04-19 | 哈尔滨工业大学 | Electromagnetic induction quick connection method suitable for high-power electronic device or assembly |
| WO2024114165A1 (en) * | 2022-11-28 | 2024-06-06 | 成都辰显光电有限公司 | Drive backplane, display panel, and preparation method for drive backplane |
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