CN101143432B - 用于低压研磨的多层研磨垫 - Google Patents
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Abstract
本发明是关于一种研磨垫,其具有一研磨层及一固定于该研磨层的背衬层。该研磨层具有一研磨表面、一第一厚度、一第一压缩度、一萧氏硬度D介约40至80的硬度。该背衬层具有一等于或小于该第一厚度的第二厚度以及一大于该第一压缩度的第二压缩度。该第一厚度、第一压缩度、第二厚度及第二压缩度在施加1.5psi或更小的压力时可使研磨表面偏斜比研磨层的厚度不均匀度多。
Description
本申请是提交于2006年1月26日,申请号为200680003086.7,题为“用于低压研磨的多层研磨垫”的专利申请的分案申请。
技术领域
本发明是有关于化学机械研磨期间的研磨垫。
背景技术
集成电路通常是以连续沉积导电层、半导体层或绝缘层于硅晶圆上的方式形成。制造步骤的一包括沉积填充层于非平坦表面上,并平坦化该填充层直至暴露出非平坦表面。例如,导电性填充层可沉积于一经图案化的绝缘层上,以填充该绝缘层中的沟槽或孔洞。接着研磨该填充层直至暴露出该绝缘层的凸起图案。在平坦化之后,残留在绝缘层凸起图案之间导体层的部分会形成介层洞、插塞及金属线,以形成基材上薄层电路间的导电路径。此外,制程亦需要平坦化以提供可续行微影的平坦化基材表面。
化学机械研磨(CMP)即为可接受的平坦化方法之一。此平坦化方法通常需将基材放置在承载头或研磨头上,并使基材的暴露表面靠抵研磨垫的研磨表面,例如旋转研磨碟形垫或线性步进带。承载头可提供可控制的负载于基材上,以将之压抵于研磨垫。可包含研磨粒子的研磨液则供应至研磨垫表面,并于该表面及研磨垫之间形成相对移动,以研磨并使的平坦化。
习知研磨垫包括「标准」研磨垫或一固定式研磨垫。典型的标准研磨垫具有耐磨表面的聚氨酯研磨层,且也可包括可压缩的背衬层。反之,固定式研磨垫则有许多研磨粒子固定在封围媒介中,并支撑在通常无法压缩的背衬层上。
化学机械研磨制程的目的之一在于使基材上的剖面轮廓均匀。另一目的则是使研磨均匀。若基材上不同区域以不同速率研磨,则基材某些区域很可能会被移除掉过多的材料(称为过度研磨)、或仅有少数材料遭移除(称为研磨不足),因而导致基材上有不均匀的剖面轮廓。
发明内容
本发明的一态样是关于一研磨垫,其具有一研磨层及一固定于该研磨层的背衬层。该研磨层具有一研磨表面、一第一厚度、一第一压缩度、一萧氏硬度D介约40至80的硬度、以及一厚度不均匀度。该背衬层具有一等于或小于该第一厚度的第二厚度以及一大于该第一压缩度的第二压缩度。该第一厚度、第一压缩度、第二厚度及第二压缩度在施加1.5psi或更小的压力时可使研磨表面偏斜,且其偏斜度大于研磨层的厚度不均匀度。
本发明的实施可包括下列一或多种特征。第二厚度可大于第一厚度、或约等于第一厚度。该背衬层的萧式硬度A可介约1至10间。该背衬层的第二厚度介约30至200密尔,例如介约30至90密尔。数个沟槽可形成于研磨表面中。凹槽可形成在研磨层的底表面,而孔径可形成在背衬层中与该凹槽对齐。导电薄片可固定至背衬层上与研磨层相反的一面上。数个孔洞可穿通该研磨层及背衬层以暴露出该导电薄片。一固态光可穿透部(light-transmissive portion)可位在研磨层中。孔径可形成在该与光可穿透部对齐的背衬层中。一光可穿透的黏着层可设在背衬层上与研磨层相反的一面上,且该黏着层可横跨背衬层的孔径。一不透水透明薄片可位于背衬层及研磨层之间。研磨层的外缘可突出该背衬层的外缘。在施加压力为1.5psi或更少时,该背衬层第二厚度及第二压缩度的乘积为2密尔或更多。背衬层也可包括聚氨酯、聚醚或聚硅化物泡沫塑料。
本发明另一态样是关于一研磨垫,其具有一研磨表面、一位于该研磨层中的固态光可穿透部、一背衬层(位于该研磨层上与研磨表面相反的一面上)、以及一光可穿透黏着层(位于该背衬层上与该研磨层相反的一面上),其中该背衬层具有一与该光可穿透部对齐的孔径,且该光可穿透黏着层横跨该背衬层的孔径。
实施本发明包括下列一或多种特征。黏着层是邻靠着该背衬层。该背衬层可藉黏着剂直接连接至该研磨层。导电层可位于该黏着层与该背衬层相反的一面上,例如,该导电层可邻靠着该黏着层。该背衬层可较研磨层更具压缩性。黏着层可包括双面黏着带。黏着层可包括聚乙烯对苯二甲酸酯薄膜。窗口可一体形成在研磨层中、或可藉黏着层固定在研磨层的孔径中。不透水透明薄片可设于该背衬层及研磨层之间。
本发明另一态样是关于一研磨垫,其含有一具研磨表面的研磨层,以及一背衬层(位于该研磨层上与该研磨表面相反的一面上)。研磨层的外缘突出该背衬层的外缘。
本发明的实施方式可包括下列一或多种特征。该研磨层及背衬层可大致呈圆形,且该背衬层的直径可小于研磨层的直径。该背衬层可较研磨层更具压缩性。该研磨层的外缘可突出该背衬层的外缘约四分之一英寸。该研磨层及背衬层可以黏着物固定。
本发明另一态样是关于一研磨垫,其包含一具研磨表面的研磨层、一位于该研磨层中的固态光可穿透部、一背衬层(位于该研磨层上与该研磨表面相反的一面上)、一介于该背衬层及该研磨层间的不透水透明薄片、以及一导电层(位于该黏着层上与该背衬层相反的一面上)。该背衬层具有一与该光可穿透部对齐的孔径,且该透明薄片横跨该固态光可穿透部。
本发明另一态样是关于一基材处理设备。该设备包括一衬垫支撑件、一依据前述态样的一的研磨垫、一用以支撑一基材与该研磨垫接触的承载头、一制程液体供应器以及一连接至该衬垫支撑件的至少一个以及该承载头的马达,以使研磨垫与基材间有相对移动。
本发明的实施方式包括下列一或多种特征。该设备可包括一经放置以接触基材的电极、一接触该处理液体的阴极、以及一耦接于电极及阴极间的电源供应器,用以形成偏压。
本发明另一实施态样是关于化学机械制程的方法。该方法包括依据前述态样的一个将基材接触研磨垫的研磨层的研磨表面;供应研磨液体至该研磨表面;于基材及研磨表面间形成相对运动;以及施加压力至该基材,以将基材压抵研磨垫。
实施本发明可包括下列一或多种特征。所施加压力可为1.5psi或更低,且研磨表面在该施加压力下会偏斜较研磨层厚度不均匀度为多。供应研磨液体可包括供应电解质,且该方法更可包括于一暴露至该电解质的阴极及该基材间施加偏压。
任何一种不同于前述的实施方法也可应用至本发明各种态样。
本发明潜在优点可包括下述一或多种。基材整个研磨均匀度都可改善,尤其是在低压力下,例如低于1.5或1.0psi,或甚至低于0.5或0.3psi。因此,例如需要低压力研磨以避免不均匀的伤害(例如分层现象(delamination))的低k值介电材料,便可以研磨达可接受的均匀程度。此外,在基材以低的下压力研磨及/或基材因内部应力而不平坦(可能因多层的导电及介电层所致)时,研磨垫可提供与基材表面有良好的机械接触。因此,便可使基材的过早损害(例如在视窗周围区域衬垫与平台的过早分离)降低,以增加研磨垫使用寿命。研磨液体渗漏至背衬层的可能性便可降低。
本发明其他实施例的细节将详述于附加图式及下文实施方式中。而本发明其他特征、目的及优点在参阅实施方式及图式与权利要求后将更可清楚领会。
附图说明
图1A是图示习知研磨垫的概要侧视截面图。
图1B是图示基材与图1A研磨垫接触时的概要侧视截面图。
图2是化学机械研磨站的概要部分截面侧视图。
图3A是图示图2研磨垫的概要截面侧视图。
图3B是图示基材与图3A研磨垫接触的概要截面侧视图。
图3C是图示研磨垫另一实施态样的概要截面侧视图,其中该覆盖层与该背衬层是基本相同的厚度。
图3D是图示研磨垫另一实施态样的概要截面侧视图,其中覆盖层与背衬层有大致相同厚度。
图3E是图示研磨垫另一实施态样的概要截面侧视图,其中该覆盖层突出该背衬层。
图4是图示研磨垫另一实施态样的概要截面侧视图,其中覆盖层底表面有凹槽形成。
图5是图示研磨垫另一实施例的概要截面侧视图,其包括一透明薄片。
图6A是图示研磨垫另一实施例的概要截面侧视图,其包括一视窗及一横跨该视窗的黏着层。
图6B是图示研磨垫另一实施例的概要截面侧视图,其包括一视窗及一横跨该视窗的黏着层以及一透明薄片。
图7是图示研磨垫另一实施例的概要截面侧视图,其包括一导电层。
图8是图示研磨垫另一实施例的概要截面侧视图,其包括一视窗及一导电层。
图9是研磨垫的另一实施例的概要截面侧视图,其包括一视窗、一透明薄片以及一导电层。
不同图式中均以相同参考号标示相同元件。
主要元件符号说明
10研磨站 16可旋转平台
18研磨垫 20背衬层
22外层 24研磨表面
30研磨浆 32研磨浆/润湿液臂
34承载头 36驱动轴
38轴 50黏着层
52衬里 56固态透明部
58孔径 59黏着层
60研磨垫 62背衬层
64覆盖层 66研磨表面
80薄片 88黏着层
90导电层 92上表面
94穿孔 96孔洞
具体实施方式
如前文所提及,图1A是习知含聚氨酯覆盖层64的研磨垫60,其具有一耐用的研磨表面66及可压缩背衬层62,其厚度与覆盖层大致相同。此外,覆盖层64厚度可能有些微变化,例如载研磨垫表面有几密尔单位,如约1-2密尔的变化(为清楚起见,差异变化在图1A中都特别突显)。
例如,Rodel公司所上市的一种研磨垫便具有一内含中空微球体(IC1000)的聚氨酯所形成的覆盖层,以及一由不透水聚酯毡(Suba IV)形成的背衬层。该覆盖层厚度为50或80密尔,而萧式硬度D值为52-62,其中背衬层厚度为50密尔而萧式硬度A约为61。
不幸的是,习知研磨垫在低压力下(例如低于1.5psi或低于1.0psi,且特别是在非常低压力下,如低于0.5psi时)会导致无法接受的研磨均匀度。若不受限于特定理论,标准研磨垫的尺寸及物理特性都会使得低研磨压力下的背衬层仍维持相当的刚性,使得基材14的下压力无法充分完全的「贴平」覆盖层。因此,如图1B所示,覆盖层64的任何厚度变化都会导致传递至基材的压力只存在于覆盖层64厚的部分66,因而使得研磨率不均匀。此外,由于内部应力,基材通常并非完全平整,且所施加的负载可能不足以使基材完全压抵研磨垫,因而在基材及研磨表面间形成不均匀的接触。
然而本发明研磨垫的一实施方式并不同于前述习知研磨垫,其具有一较薄的覆盖层以及一较厚且更具压缩性的背衬层。同样若不受限于特定理论,减少覆盖层厚度可使其更易偏斜。此外,增加背衬层的厚度及压缩度将使得覆盖层更易偏斜。因此,即便处于非常低的研磨压力,覆盖层仍可与基材一致(例如,若基材如图所示般平坦,则覆盖层也将平坦;而若基材变形,则覆盖层也将有相同外形),使得覆盖层的厚度变化不会对研磨均匀度造成不利影响,且基材及研磨表面间形成的良好机械接触可提供高研磨率及较短的研磨时间。
现参照图2,一或多片基材14可于CMP研磨设备的研磨站10处进行研磨。适用的研磨设备可参照美国专利第5,738,574号,其全文合并于此以供参考。
研磨站10包括一可旋转平台16,其上可放置研磨垫18。如前文所述,研磨垫18为一具有软背衬层20及硬耐用外层22(有大致相同成分)的双层研磨垫。该耐用外覆盖层22可提供作研磨表面24。研磨站也可包括一衬垫调整设备,以维持研磨垫表面的状况使的可有效研磨基材。
于研磨步骤期间,研磨液体30(例如研磨浆)可藉研磨浆供应端口或结合的研磨浆/润湿液臂32供应至研磨垫18表面。研磨浆30可具有研磨粒子、pH值调整剂或化学活性成分。
基材14是以承载头34靠抵研磨垫18。承载头34由支撑结构(例如旋转件)悬起,并经承载驱动轴36连接至承载头旋转马达,以使承载头可绕一轴38旋转。
参照图3A,研磨垫18的覆盖层22为一相当耐用、硬且对研磨制程呈惰性的研磨材料,例如成形聚氨酯。例如,该覆盖层22萧式硬度D约为30-80,如40-80(如50-65)。覆盖层22的研磨表面24可有粗糙的表面纹理,例如,可将中空微球体内嵌至聚氨酯中,以在覆盖层由成形聚氨酯块削下时,暴露表面处的微球体能破裂而提供凹陷且粗糙的表面纹理。
覆盖层22应略薄,例如小于50密尔,如40密尔或更小、或25密尔或更小、或20密尔或更小或15密尔或更小。一般而言,覆盖层22在制造时应尽可能薄。然而,调整制程容易磨除覆盖层。因此,覆盖层厚度可作选择以提供研磨垫更好的使用寿命,例如3000次的研磨及调整循环。例如,覆盖层厚度可为5至10密尔。介约5至20密尔的厚度应可适用。衬垫表面厚度的不均匀度约为1-3密尔,然亦有可能有较大的不均匀度(此等不均匀度是指因衬垫制造过程所致的研磨垫厚度的整体变化,而非小尺距(如小于100密尔)的不连续厚度变化,例如沟槽、穿孔或表面粗糙)。
亦可选择的是,至少一部份的研磨表面24可包括数个沟槽26形成其中以装载研磨浆。该等沟槽可为任何形式,例如中心圆、直线、交叉(cross-hatched)、螺旋及类似者。沟槽26可延伸覆盖层22的厚度约20-80%,例如25%。例如,于一具有20密尔厚的覆盖层22的研磨垫中,沟槽26的深度D1约为5密尔。
背衬层20为可压缩材料,其较覆盖层22软且更具压缩性。例如,背衬层可为一开放式发泡(open-cell foam)材料或密闭式发泡(closed-cellfoam)材料,例如聚氨酯、聚酯或具有孔洞的聚硅化物,以使在压力下气室萎陷并压缩背衬层。然亦可使背衬层20材料在压力下置放在基材横向处。背衬层20萧式硬度A值为20或更小,例如12或更小,如萧式硬度A介约1至10,例如5或更小。
如前文所提及,背衬层20应较覆盖层22更具压缩性。压缩度可在一既定压力下以厚度百分比变化测量的。例如,在约0.5psi的压力下,背衬层20可承受约3%的压缩。合适的背衬层材料为康乃迪克州Rogers市Rogers公司所上市的PORON 4701-30(PORON为Rogers公司的商标)。
此外,背衬层20应略厚,例如90密尔或更多。例如,背衬层可约为95至500密尔厚,例如95-200密尔或95-150密尔或95-125密尔厚。更明确而言,背衬层20可为覆盖层22约2-15倍厚,例如4.5至8倍厚(尤其在用于20密尔厚的覆盖层时)。
一般而言,背衬层20的厚度是经选择以确保特定的背衬层20压缩度及覆盖层22刚性,覆盖层在非常小压力下(例如0.5psi或更小的压力)的偏斜至少同于覆盖层厚度的不均匀度,例如几密尔,如约2密尔(不均匀度图示于图3A)。例如,100密尔厚的背衬层在0.5psi压力下应有至少2%的压缩度,而200密尔厚的背衬层在0.5psi压力下则应有至少1%的压缩度。
此外,背衬层应具充分压缩度,以在所欲操作压力下(例如在1.5psi至0.1psi)低于研磨垫的最大压缩度。背衬层可具有一大于10%的最大压缩度,或大于20%。于一实施例中,背衬层在3-8psi的压力下具有25%的最大压缩度或更高。
背衬层压缩力的偏斜范围介于1至10psi(力量为25%偏斜时有0.2英寸的应变速率)。
简言之,于1.5psi或更低的压力(以及可能在1.0psi或更低、0.8psi或更低或0.5psi或更低、或0.3psi或更低)下,背衬层压缩度与厚度(C.D)的乘积可大于覆盖层厚度的不均匀度。例如,0.8psi或更低(及可能0.5psi或更低)的压力下,背衬层压缩度与厚度(C.D)的乘积为几密尔,例如2密尔或更多(可能为3密尔或更多)。
静液压模数K可以施加压力(P)除以体积应变(ΔV/V)测得,亦即K=PV/ΔV。假设背衬层承受净压缩力(亦即,在施加压力下材料并未横向位移),则静液压模数K会等于施加压力除以压缩力(ΔD/D)。因此,假设在0.5psi下背衬层承受至少2%的净压缩力,背衬层的压缩模数K将为25或更小。另一方面,若使用更小的压力(例如0.1psi的压力),则背衬层20的压缩模数应为5或更小。背衬层可具有50psi的压缩模数K、或在范围0.1至1.0psi中每psi的施加压力有更小的压缩模数。当然,若背衬层材料在压缩下发生横向位移,则体积应变率将会略小于压缩力,使静液压模数略高。
参照图3B,在不受限于任何特定理论下,此配置允许来自基材的下降力以低压力方式「贴平」覆盖层,甚至是在0.5psi或更低的压力,例如0.3psi或更低(如0.1psi),且因此大致补偿了研磨层的厚度不均匀以及基材变形。例如,如图所示,覆盖层22的厚度变化均由压缩背衬层20而吸收(为清楚起见,图3A将变化予以突显),以使研磨表面大致均匀接触大致平坦的整个基材表面。因此,均匀压力可得以施加至基材,藉以于低压力研磨期间改善研磨均匀性。因此,低k值介电质此类材料(需低压研磨以避免分层这样的伤害)便可研磨至可接受的均匀度。
于一实施例中,覆盖层27可藉由成形制程制造成具有数个沟槽预先形成在覆盖层的上表面。于一成形制程中,例如射出成形或压缩成形,衬垫材料是于具有凹痕的模中存放或安置以形成沟槽凹陷。或者,覆盖层22可以较习知的技术制作,例如由模块切削衬垫薄片的方式。沟槽可接着分别以加工或铣磨(milling)覆盖层上表面的方式形成。
一旦制出背衬层20及覆盖层22,其等可藉由薄黏着层28(例如感压式黏着物)而固定。
参照第3C图,于另一实施例中,背衬层与覆盖层相同厚度或较薄,但较覆盖层为软且具压缩性。更明确而言,背衬层可充分压缩以提供图3A所述研磨垫般相同功能。例如,在非常低压力下覆盖层会以与覆盖层厚度不均匀度至少相等的量作偏斜(不均匀度图示于第3C图)。简言之,于1.5psi或更低的压力下(且可能在1.0psi或以下、或0.8psi或以下、或0.5psi或以下或0.3psi或以下),背衬层的压缩度与厚度(C.D)的乘积大于覆盖层厚度的不均匀度,例如大几密尔,如约2密尔。例如,在压力约0.5psi以下,背衬层20可承受约1%至30%的压缩,例如3%的压缩。
例如,覆盖层22的萧式硬度D值约介于30至80,如50至60,且厚度介约30至90密尔,例如约50或80密尔。背衬层可为开放式发泡(open-cell foam)材料或密闭式发泡(closed-cell foam)材料,例如聚氨酯、聚酯或具有孔洞的聚硅化物。该背衬层20萧式硬度A为20或更小,例如12或更小,如萧式硬度A值介于1至10(如5或更小),且厚度大致约等于或小于覆盖层,例如30至90密尔,如50密尔。
在使用时,研磨垫18可固定至设有黏着层的平台。参照图3D,研磨垫也可参照图3A或3C图配置具有黏着层50,例如双面式黏着带,如双面涂覆有黏着剂的Mylar薄片,覆盖在背衬层20底部。此外,非黏着性衬里52可放置在黏着层50上。在将研磨垫18黏附至平台前可移除衬里52。黏着层50可提供额外的结构完整性子研磨垫,以使衬垫可一起由平台上移除,而不会撕裂背衬层。
参照图3E,于另一实施例中,也可以第3A、3C或3D图方式建置,使背衬层20直径小于覆盖层22直径。例如,背衬层20直径为30.0英寸,而覆盖层22直径为30.5英寸。覆盖层外缘最后可自背衬层20外缘均匀凹陷约0.25英寸的距离D2,以协助避免研磨液(例如去离子水)因毛细作用或类似作用而进入背衬层20,而改变了背衬层20的压缩度并影响研磨制程的均匀性。
参照图4,于另一实施例中,亦可以第3A、3C、3D或3E图方式建置,而在覆盖层22底表面72形成一或多个凹陷70,以形成薄段部74。此等凹陷70可延伸覆盖层22厚度的20%至80%,例如50%。例如,于具有20密尔厚的覆盖层22的研磨垫中,凹陷52可深约10密尔,而形成厚度约10密尔的薄段部74。此外,可于背衬层20中形成一或多个孔径76,以利感应元件穿过背衬层20并部分进入覆盖层22。
于此实施例中,沟槽26并未延伸于覆盖层20的薄段部74上方。因此,研磨垫的研磨表面24包括具有或不具有沟槽的部分,而凹陷是位在该等不具有沟槽的部分的其中一个。该等沟槽26应具充分深度,以使其等可延伸或通过由凹陷70表面所界定的平面。
参照图5,另一实施例中亦可以第3A、3C-3E或图4方式建置,将不透水、抗撕材料(例如聚乙烯对乙苯二甲酸酯,例如Mylar)的薄片80设于背衬层20及覆盖层22之间。薄片80可藉由将黏着层28固定至覆盖层22,或将覆盖层22直接沈积在薄片80上。薄片80可藉一薄黏着层88固定至背衬层20。该薄片80可为透明材料,且对齐的覆盖层22及背衬层20的部分82及84可分别移除以使研磨垫形成光学端口(optical port)。
或者,可于研磨垫中形成一视窗而无须使用透明薄片。例如,固态透明部可形成于覆盖层22中,而背衬层20中可形成一孔径以与该固态透明部对齐。该透明部可藉由于覆盖层22中削除一孔径的方式形成,并以一黏着剂固定一透明插塞。或者,透明部可藉由将透明材料插入件置于液态衬垫材料,并固化该液态衬垫材料以使透明材料插入件整体成形为一块固态衬垫的方式形成,并接着自该块体切削出覆盖层。
于前述两种实施方式中,黏着层50可自光学端口或视窗区域移除。
此外,除自该光学端口或视窗区域移除外,黏着层50可大致透明并横跨光学端口。例如,参照图6A,研磨垫18可包括一体成形为覆盖层或由覆盖层孔径中的黏着剂所固定的固态透明部56。形成于背衬层20中的孔径58与固态透明部56对齐。若透明部是以黏着剂固定,则透明部56的边缘可绕孔径58突出并安置于背衬层20边缘上,并以黏着层59(其可为黏着剂28的一部分)固定至背衬层20。另一方面,若透明部56是一体形成覆盖层22,则不需要黏着层59,且孔径58可与透明部相同或不同尺寸。此实施方式也可包括图3A、3C-3E及图4所述的该等特征。
黏着层50可横跨背衬层20的底表面,包括孔径58。该黏着层可为双面黏着带,其薄度约如2密尔厚,聚乙烯对苯二甲酸酯薄膜可以黏着剂涂覆在两面。为建构图6A所示的研磨垫,孔径可在黏着层50施加至研磨垫底表面的前先形成在背衬层20中。该孔径可在背衬层20固定至覆盖层22的前或之后形成在背衬层20中。
使黏着层50横跨孔径58的潜在优点在于,其可降低视窗损毁的可能性,并因此增加研磨垫的使用寿命。在不受限于特定理论下,若黏着层50未横跨孔径58,则研磨垫与环绕该视窗的平台的黏附性会缩减,因而基材自衬垫负载及卸载期间的压力循环会造成研磨垫对环绕该视窗的平台的黏着失败,而使环绕该视窗的衬垫部变形而形成研磨不均匀。反之,若黏着层50横跨该视窗可强化对平台表面的黏附,藉以减少衬垫损坏的可能性。
亦可选择的是,如图6B所示,不透水、抗撕材料(例如聚乙烯对乙苯二甲酸酯)的薄片80也可连同固态透明部56设于背衬层20及覆盖层22之间。该透明部56可一体形成于覆盖层22中,或可为独立的透明件黏附固定至不透水薄片80。透明部56可藉黏着剂59黏附固定至不透水薄片80,而黏着剂可与黏着层28为相同或不同材料。若透明部56一体形成于覆盖层中,黏着剂59可选择性移除。此外,孔径58上黏着层88的部分可移除或留在适当处。
参照图7,另一实施例中亦可以图3A-图5方式建置,导电层90(例如不锈钢此种薄金属层,如SST 410)可以黏着层98固定至背衬层22的底表面。金属层90也可具磁性。数个穿孔94是穿通覆盖层22及背衬层20两者以暴露金属层的上表面92。此外,一或多个孔洞96可穿过覆盖层22、背衬层20及金属层90,以允许固定至平台的电极穿通研磨垫而接触基材。
参照图8,若研磨垫如图7所示包括一导电层90、并如图6A所示使黏着层横跨视窗时,则导电层90可位在黏着层50下方。此外,孔径可形成在黏着层50中由穿孔94暴露出金属层的上表面92。图8图示一实施态样,其中透明部56是一体形成覆盖层22,且孔径58与透明部具有相同尺寸。
参照图9,若研磨垫如图7所示包括导电层90、黏着层50如图6B所示横跨一视窗及透明薄片时,则导电层90可位在黏着层50下方。此外,孔径可形成在黏着层50、28及88中,并经穿孔94中的透明薄片80将金属层上表面92暴露出。
除了化学机械研磨,图7-9的研磨垫(其也可使用与第3A-6B图所述或所示不同的特征)也可用于电化学制程,例如电化学机械研磨(ECMP)或同步电化学沉积及研磨。
于电化学机械研磨中,导电材料(例如铜)是在基材表面作研磨的同时藉由电化学分解方式由基材表面移除。基材表面是置于电解质中(电解质也作为研磨液使用),并于基材及接触电解质的阴极间施加偏压。该ECMP可于低或非常低压下进行,例如低于1psi,如0.8psi或以下,或0.5psi或以下,或0.3psi或以下。
例如,参照图7-9,金属薄片90可连接至第一电极以作为阴极(该等孔洞94可提供电解质至金属薄片的接触),而第二电极可延伸过孔径96以接触基材,使基材作为阳极。
于电化学沉积中,偏压电压亦可相反,使基材表面成为阴极,接触电解质的电极成为阳极,导电材料则电解沉积在基材上。若进行此动作而基材同时以低压接触移动的处理衬垫,则材料将较佳地沉积在介电层的任一沟渠中。
前述已揭示本发明若干实施例。然而,应理解的是亦可于不悖离发明精神及范围下提出各种变化。
例如,黏着层可施加至研磨垫的底表面,以将衬垫固定至平台,而黏着层可以一可移除式衬垫覆盖。于使用透明薄片的实施态样中,透明薄片不需横跨整个研磨垫,透明薄片可够大而横跨各孔径,以封闭视窗。
无论研磨垫或是承载头,或两者均可移动以于研磨表面及基材间形成相对移动。该研磨垫可为圆形(或其他形状)衬垫以固定于平台,一延伸于施加及引取轮(take-up roller)的带体或连续带。该研磨垫可固定于平台上,于该等研磨操作间递增步进于平台上,或于研磨期间连续驱动于平台上。该衬垫于研磨期间可固定至平台,或于研磨期间平台及研磨垫间可有一流动轴承(fluid bearing)。此外,虽然使用垂直定位,但应理解研磨表面及基材也可以垂直方位或其他方位倒置。
因此,其他实施态样亦应落于权利要求的保护范围中。
Claims (8)
1.一种形成研磨垫的方法,包含:
在具有一研磨表面的研磨层中形成一固态光可穿透部;
将一背衬层固定到该研磨层上与该研磨表面相反的一面上,该背衬层具有与该光可穿透部对齐的一孔径;以及
用位于该背衬层上与该研磨层相反的该面上的一光可穿透黏着层横跨该背衬层上的该孔径。
2.如权利要求1所述的方法,其中该黏着层邻靠着该背衬层。
3.如权利要求1所述的方法,其更包含固定一导电层至该黏着层上与该背衬层相反的一面上。
4.如权利要求1所述的方法,其中该黏着层包含一双面黏着带。
5.如权利要求1所述的方法,其中该黏着层包括一聚乙烯对苯二甲酸酯薄膜。
6.如权利要求1所述的方法,还包含:
将具有该研磨表面的该研磨层固定至该背衬层,使得该研磨层的一外缘是突出于该背衬层的一外缘。
7.如权利要求6所述的方法,其中该研磨层及背衬层均大致为圆形,且其中该背衬层的直径小于研磨层的直径。
8.如权利要求6所述的方法,其中该研磨层的该外缘突出该背衬层的该外缘约四分之一英寸。
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2005
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2006
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- 2006-01-26 TW TW095103206A patent/TWI321141B/zh not_active IP Right Cessation
- 2006-01-26 CN CN2006800030867A patent/CN101107095B/zh not_active Expired - Fee Related
- 2006-01-26 JP JP2007553196A patent/JP2008528309A/ja active Pending
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2010
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Also Published As
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JP2008528309A (ja) | 2008-07-31 |
US20050221723A1 (en) | 2005-10-06 |
US20100267318A1 (en) | 2010-10-21 |
CN101143432A (zh) | 2008-03-19 |
WO2006081286A2 (en) | 2006-08-03 |
TWI321141B (en) | 2010-03-01 |
CN101107095A (zh) | 2008-01-16 |
WO2006081286A3 (en) | 2006-12-14 |
CN101107095B (zh) | 2011-07-20 |
WO2006081286A8 (en) | 2007-08-30 |
US8066552B2 (en) | 2011-11-29 |
TW200628518A (en) | 2006-08-16 |
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