CN101142505A - 绝缘体上硅(soi)结构中的光的主动操控 - Google Patents
绝缘体上硅(soi)结构中的光的主动操控 Download PDFInfo
- Publication number
- CN101142505A CN101142505A CNA2005800056379A CN200580005637A CN101142505A CN 101142505 A CN101142505 A CN 101142505A CN A2005800056379 A CNA2005800056379 A CN A2005800056379A CN 200580005637 A CN200580005637 A CN 200580005637A CN 101142505 A CN101142505 A CN 101142505A
- Authority
- CN
- China
- Prior art keywords
- waveguide
- soi
- region
- optical
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012212 insulator Substances 0.000 title description 5
- 230000003287 optical effect Effects 0.000 claims abstract description 179
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 73
- 229920005591 polysilicon Polymers 0.000 claims abstract description 69
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- 239000010703 silicon Substances 0.000 claims abstract description 46
- 230000001902 propagating effect Effects 0.000 claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 42
- 230000008878 coupling Effects 0.000 claims description 18
- 238000010168 coupling process Methods 0.000 claims description 18
- 238000005859 coupling reaction Methods 0.000 claims description 18
- 230000010287 polarization Effects 0.000 claims description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- 230000010363 phase shift Effects 0.000 claims description 6
- 238000007493 shaping process Methods 0.000 claims description 5
- 230000035945 sensitivity Effects 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- 230000000644 propagated effect Effects 0.000 claims 1
- 230000006870 function Effects 0.000 abstract description 15
- 239000010410 layer Substances 0.000 description 145
- 230000008859 change Effects 0.000 description 20
- 238000000034 method Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- 238000012545 processing Methods 0.000 description 8
- 230000000295 complement effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 240000007124 Brassica oleracea Species 0.000 description 1
- 241000669618 Nothes Species 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/292—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection by controlled diffraction or phased-array beam steering
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/294—Variable focal length devices
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Optical Integrated Circuits (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
Description
Claims (37)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US54791104P | 2004-02-26 | 2004-02-26 | |
US60/547,911 | 2004-02-26 | ||
PCT/US2005/006365 WO2005082091A2 (en) | 2004-02-26 | 2005-02-28 | Active manipulation of light in a silicon-on-insulator (soi) structure |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101142505A true CN101142505A (zh) | 2008-03-12 |
CN101142505B CN101142505B (zh) | 2010-05-05 |
Family
ID=34910961
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800056379A Active CN101142505B (zh) | 2004-02-26 | 2005-02-28 | 绝缘体上硅(soi)结构中的光的主动操控装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7187837B2 (zh) |
EP (1) | EP1743376B1 (zh) |
JP (1) | JP4847436B2 (zh) |
KR (1) | KR101115735B1 (zh) |
CN (1) | CN101142505B (zh) |
CA (1) | CA2557509C (zh) |
WO (1) | WO2005082091A2 (zh) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102135644A (zh) * | 2010-01-27 | 2011-07-27 | 独立行政法人产业技术综合研究所 | 波长域光开关 |
CN103308476A (zh) * | 2013-05-16 | 2013-09-18 | 成都谱视科技有限公司 | 基于游标效应的双微环谐振腔光学生化传感芯片 |
CN103885121A (zh) * | 2014-03-31 | 2014-06-25 | 中国科学院半导体研究所 | 异质集成光波导可调波分复用/解复用器的制作方法 |
CN104730621A (zh) * | 2015-03-05 | 2015-06-24 | 湖南大学 | 一种基于金属-介电层-半导体复合纳米结构的光波导分束器及其制备方法 |
CN106068586A (zh) * | 2014-01-20 | 2016-11-02 | 洛克利光子有限公司 | 可调谐soi激光器 |
CN107171047A (zh) * | 2017-05-03 | 2017-09-15 | 电子科技大学 | 超宽可调谐振器 |
CN110088915A (zh) * | 2016-12-19 | 2019-08-02 | 伟摩有限责任公司 | 光电检测器阵列与数字前端的混合集成 |
CN111061069A (zh) * | 2020-01-03 | 2020-04-24 | 宁波大学 | 基于硅和相变材料的槽型复合波导的电光调制器 |
CN111220964A (zh) * | 2018-11-27 | 2020-06-02 | 北京万集科技股份有限公司 | 混合材料相控阵激光雷达发射芯片、制作方法及激光雷达 |
US10775650B2 (en) | 2016-08-29 | 2020-09-15 | Nippon Telegraph And Telephone Corporation | Optical modulator |
CN114019605A (zh) * | 2021-11-11 | 2022-02-08 | 西安邮电大学 | 一种基于soi的对角刻蚀亚波长光栅型片上偏振旋转器 |
Families Citing this family (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100745285B1 (ko) * | 2003-04-23 | 2007-08-01 | 시옵티컬 인코포레이티드 | Soi 광학 플랫폼상에 형성된 서브-마이크론 평면 광파디바이스 |
US7672558B2 (en) * | 2004-01-12 | 2010-03-02 | Honeywell International, Inc. | Silicon optical device |
US7217584B2 (en) * | 2004-03-18 | 2007-05-15 | Honeywell International Inc. | Bonded thin-film structures for optical modulators and methods of manufacture |
US7149388B2 (en) * | 2004-03-18 | 2006-12-12 | Honeywell International, Inc. | Low loss contact structures for silicon based optical modulators and methods of manufacture |
US7177489B2 (en) * | 2004-03-18 | 2007-02-13 | Honeywell International, Inc. | Silicon-insulator-silicon thin-film structures for optical modulators and methods of manufacture |
US20050214989A1 (en) * | 2004-03-29 | 2005-09-29 | Honeywell International Inc. | Silicon optoelectronic device |
US20060063679A1 (en) * | 2004-09-17 | 2006-03-23 | Honeywell International Inc. | Semiconductor-insulator-semiconductor structure for high speed applications |
JP4897210B2 (ja) * | 2004-11-18 | 2012-03-14 | ラピスセミコンダクタ株式会社 | 半導体装置の構造及びその製造方法 |
US20070101927A1 (en) * | 2005-11-10 | 2007-05-10 | Honeywell International Inc. | Silicon based optical waveguide structures and methods of manufacture |
US7362443B2 (en) * | 2005-11-17 | 2008-04-22 | Honeywell International Inc. | Optical gyro with free space resonator and method for sensing inertial rotation rate |
JP5433919B2 (ja) * | 2005-12-27 | 2014-03-05 | 日本電気株式会社 | 光機能素子、その駆動方法及び製造方法 |
US7514285B2 (en) * | 2006-01-17 | 2009-04-07 | Honeywell International Inc. | Isolation scheme for reducing film stress in a MEMS device |
US7442589B2 (en) * | 2006-01-17 | 2008-10-28 | Honeywell International Inc. | System and method for uniform multi-plane silicon oxide layer formation for optical applications |
WO2007123551A1 (en) * | 2006-04-26 | 2007-11-01 | Georgia Tech Research Corporation | High speed optical switch |
US20070274655A1 (en) * | 2006-04-26 | 2007-11-29 | Honeywell International Inc. | Low-loss optical device structure |
US7454102B2 (en) * | 2006-04-26 | 2008-11-18 | Honeywell International Inc. | Optical coupling structure |
US7447395B2 (en) * | 2006-06-15 | 2008-11-04 | Sioptical, Inc. | Silicon modulator offset tuning arrangement |
US7539358B2 (en) * | 2006-06-15 | 2009-05-26 | Lightwire Inc. | SOI-based opto-electronic device including corrugated active region |
WO2008024458A2 (en) * | 2006-08-24 | 2008-02-28 | Cornell Research Foundation, Inc. | Dynamic wavelength converter |
US20080101744A1 (en) * | 2006-10-31 | 2008-05-01 | Honeywell International Inc. | Optical Waveguide Sensor Devices and Methods For Making and Using Them |
KR100772538B1 (ko) * | 2006-12-05 | 2007-11-01 | 한국전자통신연구원 | Pn 다이오드를 이용한 광전 소자 및 그 광전 소자를포함한 실리콘 ic |
US7389019B1 (en) * | 2006-12-19 | 2008-06-17 | Verizon Services Organization Inc. | Variable photonic coupler |
US7668420B2 (en) * | 2007-07-26 | 2010-02-23 | Hewlett-Packard Development Company, L.P. | Optical waveguide ring resonator with an intracavity active element |
US8362494B2 (en) * | 2007-08-08 | 2013-01-29 | Agency For Science, Technology And Research | Electro-optic device with novel insulating structure and a method for manufacturing the same |
CN101960345B (zh) * | 2007-10-19 | 2013-01-02 | 光导束公司 | 用于模拟应用的硅基光调制器 |
US8080849B2 (en) * | 2008-01-17 | 2011-12-20 | International Business Machines Corporation | Characterizing films using optical filter pseudo substrate |
US8676017B2 (en) * | 2008-06-26 | 2014-03-18 | Nec Corporation | Light control element and optical waveguide circuit |
US8149493B2 (en) * | 2008-09-06 | 2012-04-03 | Sifotonics Technologies (Usa) Inc. | Electro-optic silicon modulator |
WO2010055826A1 (ja) * | 2008-11-13 | 2010-05-20 | 日本電気株式会社 | 光変調器とその製造方法 |
US8103166B2 (en) * | 2009-01-12 | 2012-01-24 | Alcatel Lucent | Multi-wavelength coherent receiver with a shared optical hybrid and a multi-wavelength local oscillator |
US8936962B2 (en) | 2009-03-13 | 2015-01-20 | Nec Corporation | Optical modulator and method for manufacturing same |
US8520984B2 (en) * | 2009-06-12 | 2013-08-27 | Cisco Technology, Inc. | Silicon-based optical modulator with improved efficiency and chirp control |
JPWO2010146926A1 (ja) | 2009-06-16 | 2012-12-06 | 日本電気株式会社 | 接続路 |
WO2011030593A1 (ja) * | 2009-09-10 | 2011-03-17 | 日本電気株式会社 | 電気光学変調器 |
US8072684B2 (en) | 2010-01-25 | 2011-12-06 | Toyota Motor Engineering & Manufacturing North America, Inc. | Optical device using laterally-shiftable diffraction gratings |
GB2477935A (en) * | 2010-02-17 | 2011-08-24 | Univ Surrey | Electro-optic device with a waveguide rib |
WO2011108508A1 (ja) * | 2010-03-05 | 2011-09-09 | 日本電気株式会社 | 光変調器 |
US8620115B2 (en) * | 2010-03-10 | 2013-12-31 | Cisco Technology, Inc. | Optical modulators with controllable chirp |
US8300990B2 (en) * | 2010-04-14 | 2012-10-30 | Oracle America, Inc. | Slotted optical waveguide with electro-optic material |
KR101070409B1 (ko) | 2010-08-02 | 2011-10-06 | 한국전자통신연구원 | 마하-젠더 광 변조기 |
US8358897B1 (en) * | 2010-12-10 | 2013-01-22 | Aurrion, Llc | High index bonding layer for hybrid photonic devices |
CN102096204B (zh) * | 2011-01-05 | 2012-12-05 | 苏州大学 | 宽带角度选择激光滤波器 |
US8818155B2 (en) | 2012-09-07 | 2014-08-26 | International Business Machines Corporation | Planar waveguide prism lens |
WO2015180149A1 (zh) * | 2014-05-30 | 2015-12-03 | 华为技术有限公司 | 电光调制器 |
CA2958754C (en) * | 2014-08-15 | 2021-04-20 | Aeponyx Inc. | Methods and systems for microelectromechanical packaging |
US9575337B2 (en) | 2014-12-12 | 2017-02-21 | Cisco Technology, Inc. | Electro-optic modulator termination |
JP6394454B2 (ja) * | 2015-03-24 | 2018-09-26 | 住友電気工業株式会社 | マッハツェンダー変調器 |
WO2016157687A1 (ja) | 2015-03-31 | 2016-10-06 | 日本電気株式会社 | 電気光学装置 |
FR3034879B1 (fr) * | 2015-04-13 | 2018-06-22 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Guide d'onde pour modulateur electro-optique de type capacitif. |
US10025033B2 (en) | 2016-03-01 | 2018-07-17 | Advanced Semiconductor Engineering, Inc. | Optical fiber structure, optical communication apparatus and manufacturing process for manufacturing the same |
US10241264B2 (en) | 2016-07-01 | 2019-03-26 | Advanced Semiconductor Engineering, Inc. | Semiconductor device packages |
US10809547B2 (en) * | 2016-11-23 | 2020-10-20 | Rockley Photonics Limited | Electro-optically active device |
US11105975B2 (en) * | 2016-12-02 | 2021-08-31 | Rockley Photonics Limited | Waveguide optoelectronic device |
CN110168433A (zh) * | 2017-11-23 | 2019-08-23 | 洛克利光子有限公司 | 电光有源装置 |
WO2019220207A1 (en) | 2018-05-16 | 2019-11-21 | Rockley Photonics Limited | lll-V/SI HYBRID OPTOELECTRONIC DEVICE AND METHOD OF MANUFACTURE |
JP7259699B2 (ja) * | 2019-10-29 | 2023-04-18 | 住友電気工業株式会社 | 半導体光素子 |
US11367803B2 (en) * | 2020-04-01 | 2022-06-21 | Taiwan Semiconductor Manufacturing Company Ltd. | Light detecting device, optical device and method of manufacturing the same |
US11442296B2 (en) * | 2020-07-20 | 2022-09-13 | Taiwan Semiconductor Manufacturing Company Ltd. | Waveguide structure and method for forming the same |
CN113759466B (zh) * | 2021-09-10 | 2023-12-29 | 苏州微光电子融合技术研究院有限公司 | 面向5g通信的偏振无关型硅基光波分复用接收器及装置 |
WO2023183591A2 (en) * | 2022-03-25 | 2023-09-28 | Magic Leap, Inc. | Method and system for variable optical thickness waveguides for augmented reality devices |
WO2024039913A2 (en) * | 2022-08-19 | 2024-02-22 | Lumenuity Inc. | Method and system for imaging and image projection using integrated photonic components |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0222630A (ja) * | 1988-07-11 | 1990-01-25 | Agency Of Ind Science & Technol | 光位相分布制御素子 |
US5276748A (en) * | 1991-11-22 | 1994-01-04 | Texas Instruments Incorporated | Vertically-coupled arrow modulators or switches on silicon |
GB2323450A (en) * | 1997-03-20 | 1998-09-23 | Secr Defence | Optical modulator |
GB2332284B (en) * | 1998-05-01 | 1999-11-03 | Bookham Technology Ltd | Branched optical waveguide,and its method of use |
US6347001B1 (en) * | 1998-11-03 | 2002-02-12 | Trex Communications Corporation | Free-space laser communication system having six axes of movement |
GB2348293A (en) * | 1999-03-25 | 2000-09-27 | Bookham Technology Ltd | Optical phase modulator |
SE518532C2 (sv) * | 1999-07-01 | 2002-10-22 | Ericsson Telefon Ab L M | Våglängdsselektiv anordning respektive väljare samt förfarande därvid |
US6646747B2 (en) * | 2001-05-17 | 2003-11-11 | Sioptical, Inc. | Interferometer apparatus and associated method |
US6990257B2 (en) * | 2001-09-10 | 2006-01-24 | California Institute Of Technology | Electronically biased strip loaded waveguide |
JP2003215515A (ja) * | 2002-01-18 | 2003-07-30 | Nippon Telegr & Teleph Corp <Ntt> | 半導体波長可変フィルタ |
US6845198B2 (en) * | 2003-03-25 | 2005-01-18 | Sioptical, Inc. | High-speed silicon-based electro-optic modulator |
EP1625615B1 (en) * | 2003-04-21 | 2017-07-26 | Cisco Technology, Inc. | Cmos-compatible integration of silicon-based optical devices with electronic devices |
CN1220108C (zh) * | 2003-07-16 | 2005-09-21 | 西安电子科技大学 | 光波导阵列电光扫描器馈电控制方法 |
-
2005
- 2005-02-28 US US11/069,852 patent/US7187837B2/en active Active
- 2005-02-28 JP JP2007500790A patent/JP4847436B2/ja not_active Expired - Fee Related
- 2005-02-28 WO PCT/US2005/006365 patent/WO2005082091A2/en active Application Filing
- 2005-02-28 KR KR1020067019707A patent/KR101115735B1/ko active IP Right Grant
- 2005-02-28 EP EP05732990.6A patent/EP1743376B1/en active Active
- 2005-02-28 CA CA2557509A patent/CA2557509C/en not_active Expired - Fee Related
- 2005-02-28 CN CN2005800056379A patent/CN101142505B/zh active Active
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102135644B (zh) * | 2010-01-27 | 2014-11-12 | 独立行政法人产业技术综合研究所 | 波长域光开关 |
CN102135644A (zh) * | 2010-01-27 | 2011-07-27 | 独立行政法人产业技术综合研究所 | 波长域光开关 |
CN103308476A (zh) * | 2013-05-16 | 2013-09-18 | 成都谱视科技有限公司 | 基于游标效应的双微环谐振腔光学生化传感芯片 |
CN103308476B (zh) * | 2013-05-16 | 2016-04-06 | 成都谱视科技有限公司 | 基于游标效应的双微环谐振腔光学生化传感芯片 |
CN106068586A (zh) * | 2014-01-20 | 2016-11-02 | 洛克利光子有限公司 | 可调谐soi激光器 |
CN106068586B (zh) * | 2014-01-20 | 2017-09-19 | 洛克利光子有限公司 | 可调谐soi激光器 |
CN103885121A (zh) * | 2014-03-31 | 2014-06-25 | 中国科学院半导体研究所 | 异质集成光波导可调波分复用/解复用器的制作方法 |
CN103885121B (zh) * | 2014-03-31 | 2016-05-11 | 中国科学院半导体研究所 | 异质集成光波导可调波分复用/解复用器的制作方法 |
CN104730621A (zh) * | 2015-03-05 | 2015-06-24 | 湖南大学 | 一种基于金属-介电层-半导体复合纳米结构的光波导分束器及其制备方法 |
US10775650B2 (en) | 2016-08-29 | 2020-09-15 | Nippon Telegraph And Telephone Corporation | Optical modulator |
CN110088915A (zh) * | 2016-12-19 | 2019-08-02 | 伟摩有限责任公司 | 光电检测器阵列与数字前端的混合集成 |
CN110088915B (zh) * | 2016-12-19 | 2023-04-04 | 伟摩有限责任公司 | 光电检测器阵列与数字前端的混合集成 |
CN107171047A (zh) * | 2017-05-03 | 2017-09-15 | 电子科技大学 | 超宽可调谐振器 |
CN111220964A (zh) * | 2018-11-27 | 2020-06-02 | 北京万集科技股份有限公司 | 混合材料相控阵激光雷达发射芯片、制作方法及激光雷达 |
CN111061069A (zh) * | 2020-01-03 | 2020-04-24 | 宁波大学 | 基于硅和相变材料的槽型复合波导的电光调制器 |
CN111061069B (zh) * | 2020-01-03 | 2023-05-12 | 宁波大学 | 基于硅和相变材料的槽型复合波导的电光调制器 |
CN114019605A (zh) * | 2021-11-11 | 2022-02-08 | 西安邮电大学 | 一种基于soi的对角刻蚀亚波长光栅型片上偏振旋转器 |
Also Published As
Publication number | Publication date |
---|---|
JP4847436B2 (ja) | 2011-12-28 |
CA2557509C (en) | 2014-09-30 |
CA2557509A1 (en) | 2005-09-09 |
EP1743376B1 (en) | 2015-09-02 |
US20050189591A1 (en) | 2005-09-01 |
WO2005082091A3 (en) | 2007-03-22 |
EP1743376A2 (en) | 2007-01-17 |
US7187837B2 (en) | 2007-03-06 |
KR101115735B1 (ko) | 2012-03-06 |
CN101142505B (zh) | 2010-05-05 |
KR20070022235A (ko) | 2007-02-26 |
WO2005082091A2 (en) | 2005-09-09 |
JP2007525711A (ja) | 2007-09-06 |
EP1743376A4 (en) | 2012-05-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101115735B1 (ko) | 에스오아이 구조체에서의 광의 능동 조작 | |
US6690844B2 (en) | Optical fiber apparatus and associated method | |
US6748125B2 (en) | Electronic semiconductor control of light in optical waveguide | |
US6608945B2 (en) | Self-aligning modulator method and associated apparatus | |
US6646747B2 (en) | Interferometer apparatus and associated method | |
US6654511B2 (en) | Optical modulator apparatus and associated method | |
US20030040134A1 (en) | Hybrid active electronic and optical fabry perot cavity | |
US6947615B2 (en) | Optical lens apparatus and associated method | |
US6625348B2 (en) | Programmable delay generator apparatus and associated method | |
US20030031394A1 (en) | Polarization control apparatus and associated method | |
US6493502B1 (en) | Dynamic gain equalizer method and associated apparatus | |
CN107407776B (zh) | 高折射率对比度光子器件及其应用 | |
CA2449860C (en) | Electronic semiconductor control of light in optical waveguide | |
US6603889B2 (en) | Optical deflector apparatus and associated method | |
JPH08234244A (ja) | チューニング可能なシリコン・ベースの光ルータ | |
US6856732B2 (en) | Method and apparatus for adding/droping optical signals in a semiconductor substrate | |
US7035494B1 (en) | Slotted multimode interference device | |
US6510259B1 (en) | Optical switch using an integrated Mach-Zehnder interferometer having a movable phase shifter and asymmetric arms | |
CA2449707C (en) | Integrated optical/electronic circuits and associated methods of simultaneous generation thereof | |
EP0947860A2 (en) | Optical grating-based device having a slab waveguide polarization compensating region | |
Teng | Design and characterization of optical fiber-to-chip edge couplers and on-chip mode division multiplexing devices | |
EP1402289A1 (en) | Anisotropic etching of optical components |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: GOTHOSKAR PRAKASH GHIRON MARGARET MONTGOMERY ROBERT KEITH PATEL VIPULKUMAR SHASTRI KALPENDU PATHAK SOHAM YANUSHEFSKI KATHERINE A. Effective date: 20131129 Owner name: CISCO TECH IND. Free format text: FORMER OWNER: LIGHTWIRE INC. Effective date: 20131129 |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee |
Owner name: LIGHTWIRE INC. Free format text: FORMER NAME: SIOPTICAL INC. |
|
CP01 | Change in the name or title of a patent holder |
Address after: American Pennsylvania Patentee after: LIGHTWIRE, Inc. Address before: American Pennsylvania Patentee before: LIGHTWIRE, Inc. Address after: American Pennsylvania Patentee after: LIGHTWIRE, Inc. Address before: American Pennsylvania Patentee before: SIOPTICAL, Inc. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20131129 Address after: American Pennsylvania Patentee after: Cisco Technology, Inc. Address before: American Pennsylvania Patentee before: Lightwire, Inc. Effective date of registration: 20131129 Address after: American Pennsylvania Patentee after: SIOPTICAL, Inc. Address before: American Pennsylvania Patentee before: SIOPTICAL, Inc. Patentee before: Prakash Yotuska Patentee before: Margaret Ghiron Patentee before: Robert Case Montgomery Patentee before: Wipkumar Patel Patentee before: Kalpandu Chasterley Patentee before: Shoham Pathak Patentee before: Catherine A. Anushevsky |