CN101141117B - 差分放大器电路、其控制方法、使用其的电压调节器 - Google Patents
差分放大器电路、其控制方法、使用其的电压调节器 Download PDFInfo
- Publication number
- CN101141117B CN101141117B CN2007101496358A CN200710149635A CN101141117B CN 101141117 B CN101141117 B CN 101141117B CN 2007101496358 A CN2007101496358 A CN 2007101496358A CN 200710149635 A CN200710149635 A CN 200710149635A CN 101141117 B CN101141117 B CN 101141117B
- Authority
- CN
- China
- Prior art keywords
- bias current
- bias
- amplifier circuit
- voltage
- switching signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 17
- 230000004044 response Effects 0.000 claims abstract description 24
- 238000010586 diagram Methods 0.000 description 6
- 230000015654 memory Effects 0.000 description 4
- 238000004590 computer program Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45244—Indexing scheme relating to differential amplifiers the differential amplifier contains one or more explicit bias circuits, e.g. to bias the tail current sources, to bias the load transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45466—Indexing scheme relating to differential amplifiers the CSC being controlled, e.g. by a signal derived from a non specified place in the dif amp circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7203—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch in the bias circuit of the amplifier controlling a bias current in the amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006244424A JP4653046B2 (ja) | 2006-09-08 | 2006-09-08 | 差動増幅回路、差動増幅回路を使用したボルテージレギュレータ及び差動増幅回路の動作制御方法 |
JP244424/06 | 2006-09-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101141117A CN101141117A (zh) | 2008-03-12 |
CN101141117B true CN101141117B (zh) | 2010-10-13 |
Family
ID=39168961
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101496358A Expired - Fee Related CN101141117B (zh) | 2006-09-08 | 2007-09-10 | 差分放大器电路、其控制方法、使用其的电压调节器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7598807B2 (zh) |
JP (1) | JP4653046B2 (zh) |
KR (1) | KR20080023133A (zh) |
CN (1) | CN101141117B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106411279A (zh) * | 2011-11-02 | 2017-02-15 | 马维尔国际贸易有限公司 | 用于差分放大器的电路 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5407510B2 (ja) | 2008-08-29 | 2014-02-05 | 株式会社リコー | 定電圧回路装置 |
US7947181B2 (en) * | 2008-11-07 | 2011-05-24 | The Good Water Company, Inc. | Reverse osmosis system |
US7862723B2 (en) * | 2008-11-07 | 2011-01-04 | The Good Water Company, Inc. | Reverse osmosis system |
JP5467845B2 (ja) * | 2009-09-29 | 2014-04-09 | セイコーインスツル株式会社 | ボルテージレギュレータ |
US8324972B2 (en) * | 2011-03-31 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Front-end circuit of low supply-voltage memory interface receiver |
US9122293B2 (en) | 2012-10-31 | 2015-09-01 | Qualcomm Incorporated | Method and apparatus for LDO and distributed LDO transient response accelerator |
US9170590B2 (en) | 2012-10-31 | 2015-10-27 | Qualcomm Incorporated | Method and apparatus for load adaptive LDO bias and compensation |
US9235225B2 (en) * | 2012-11-06 | 2016-01-12 | Qualcomm Incorporated | Method and apparatus reduced switch-on rate low dropout regulator (LDO) bias and compensation |
US8981745B2 (en) | 2012-11-18 | 2015-03-17 | Qualcomm Incorporated | Method and apparatus for bypass mode low dropout (LDO) regulator |
JP6298671B2 (ja) * | 2013-05-31 | 2018-03-20 | エイブリック株式会社 | ボルテージレギュレータ |
CN104679082B (zh) * | 2013-11-29 | 2016-03-02 | 展讯通信(上海)有限公司 | 一种自适应电路和电压信号放大器 |
JP6277151B2 (ja) * | 2015-03-31 | 2018-02-07 | 日立オートモティブシステムズ株式会社 | センサ装置 |
GB2557224A (en) * | 2016-11-30 | 2018-06-20 | Nordic Semiconductor Asa | Voltage regulator |
CN107608440A (zh) * | 2017-10-25 | 2018-01-19 | 北京智芯微电子科技有限公司 | 一种带隙基准参考源电路 |
CN109560809B (zh) * | 2019-01-07 | 2020-06-30 | 上海奥令科电子科技有限公司 | 一种对数转换电路 |
KR20220010125A (ko) * | 2020-07-17 | 2022-01-25 | 에스케이하이닉스 주식회사 | 증폭기 및 이를 포함하는 전압 생성 회로 |
CN115698894A (zh) * | 2021-05-24 | 2023-02-03 | 日清纺微电子有限公司 | 恒压产生电路 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6351187B1 (en) * | 2000-06-15 | 2002-02-26 | Micon Design Technology Co., Ltd | Structure of operational amplifier |
CN1510830A (zh) * | 2002-11-28 | 2004-07-07 | 三洋电机株式会社 | 电流控制方法及其应用 |
CN1719722A (zh) * | 2004-07-09 | 2006-01-11 | 三星电子株式会社 | 自偏置差分放大器 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63181510A (ja) * | 1987-01-22 | 1988-07-26 | Matsushita Electric Ind Co Ltd | 出力増幅回路 |
JPH0529840A (ja) * | 1991-07-17 | 1993-02-05 | Hitachi Ltd | 半導体集積回路装置 |
JP2002312043A (ja) * | 2001-04-10 | 2002-10-25 | Ricoh Co Ltd | ボルテージレギュレータ |
JP3730886B2 (ja) * | 2001-07-06 | 2006-01-05 | 日本電気株式会社 | 駆動回路及び液晶表示装置 |
JP3707680B2 (ja) * | 2002-01-25 | 2005-10-19 | 松下電器産業株式会社 | 駆動電圧制御装置 |
JP4465283B2 (ja) * | 2005-01-25 | 2010-05-19 | Okiセミコンダクタ株式会社 | 差動増幅回路 |
-
2006
- 2006-09-08 JP JP2006244424A patent/JP4653046B2/ja not_active Expired - Fee Related
-
2007
- 2007-09-03 KR KR1020070089114A patent/KR20080023133A/ko not_active Application Discontinuation
- 2007-09-04 US US11/896,630 patent/US7598807B2/en not_active Expired - Fee Related
- 2007-09-10 CN CN2007101496358A patent/CN101141117B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6351187B1 (en) * | 2000-06-15 | 2002-02-26 | Micon Design Technology Co., Ltd | Structure of operational amplifier |
CN1510830A (zh) * | 2002-11-28 | 2004-07-07 | 三洋电机株式会社 | 电流控制方法及其应用 |
CN1719722A (zh) * | 2004-07-09 | 2006-01-11 | 三星电子株式会社 | 自偏置差分放大器 |
Non-Patent Citations (2)
Title |
---|
JP特开2005-339467A 2005.12.08 |
JP特开平10-91255A 1998.04.10 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106411279A (zh) * | 2011-11-02 | 2017-02-15 | 马维尔国际贸易有限公司 | 用于差分放大器的电路 |
CN106411279B (zh) * | 2011-11-02 | 2019-04-12 | 马维尔国际贸易有限公司 | 用于差分放大器的电路 |
Also Published As
Publication number | Publication date |
---|---|
US7598807B2 (en) | 2009-10-06 |
KR20080023133A (ko) | 2008-03-12 |
JP2008067186A (ja) | 2008-03-21 |
US20080061881A1 (en) | 2008-03-13 |
JP4653046B2 (ja) | 2011-03-16 |
CN101141117A (zh) | 2008-03-12 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: RICOH MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: RICOH CO. LTD. Effective date: 20150403 |
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TR01 | Transfer of patent right |
Effective date of registration: 20150403 Address after: Osaka Patentee after: Ricoh Microelectronics Co., Ltd. Address before: Tokyo, Japan, Japan Patentee before: Ricoh Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101013 Termination date: 20160910 |
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CF01 | Termination of patent right due to non-payment of annual fee |