CN101138085B - 电介质叠层及其形成方法 - Google Patents

电介质叠层及其形成方法 Download PDF

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CN101138085B
CN101138085B CN2006800074066A CN200680007406A CN101138085B CN 101138085 B CN101138085 B CN 101138085B CN 2006800074066 A CN2006800074066 A CN 2006800074066A CN 200680007406 A CN200680007406 A CN 200680007406A CN 101138085 B CN101138085 B CN 101138085B
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dielectric
layer
low
nanolayer
stack
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CN101138085A (zh
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宋·V.·恩古彦
萨拉赫·L.·雷恩
埃里克·G.·里尼格尔
井田健作
达里尔·D.·雷斯塔诺
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Sony Corp
International Business Machines Corp
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International Business Machines Corp
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Organic Insulating Materials (AREA)
  • Insulating Bodies (AREA)
CN2006800074066A 2005-03-08 2006-03-08 电介质叠层及其形成方法 Expired - Fee Related CN101138085B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/906,815 2005-03-08
US10/906,815 US7265437B2 (en) 2005-03-08 2005-03-08 Low k dielectric CVD film formation process with in-situ imbedded nanolayers to improve mechanical properties
PCT/US2006/008449 WO2006096813A2 (en) 2005-03-08 2006-03-08 Low k dielectric cvd film formation process with in-situ imbedded nanolayers to improve mechanical properties

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CN101138085A CN101138085A (zh) 2008-03-05
CN101138085B true CN101138085B (zh) 2013-03-27

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US (2) US7265437B2 (https=)
EP (1) EP1856735A4 (https=)
JP (1) JP5398258B2 (https=)
CN (1) CN101138085B (https=)
TW (1) TWI414623B (https=)
WO (1) WO2006096813A2 (https=)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7288292B2 (en) * 2003-03-18 2007-10-30 International Business Machines Corporation Ultra low k (ULK) SiCOH film and method
US7622378B2 (en) 2005-11-09 2009-11-24 Tokyo Electron Limited Multi-step system and method for curing a dielectric film
US20070210421A1 (en) * 2006-03-13 2007-09-13 Texas Instruments Inc. Semiconductor device fabricated using a carbon-containing film as a contact etch stop layer
US8956457B2 (en) * 2006-09-08 2015-02-17 Tokyo Electron Limited Thermal processing system for curing dielectric films
US20090061237A1 (en) * 2007-08-28 2009-03-05 International Business Machines Corporation LOW k POROUS SiCOH DIELECTRIC AND INTEGRATION WITH POST FILM FORMATION TREATMENT
US20090061649A1 (en) * 2007-08-28 2009-03-05 International Business Machines Corporation LOW k POROUS SiCOH DIELECTRIC AND INTEGRATION WITH POST FILM FORMATION TREATMENT
US20090075491A1 (en) * 2007-09-13 2009-03-19 Tokyo Electron Limited Method for curing a dielectric film
US20090226695A1 (en) * 2008-03-06 2009-09-10 Tokyo Electron Limited Method for treating a dielectric film with infrared radiation
US7858533B2 (en) * 2008-03-06 2010-12-28 Tokyo Electron Limited Method for curing a porous low dielectric constant dielectric film
US7977256B2 (en) 2008-03-06 2011-07-12 Tokyo Electron Limited Method for removing a pore-generating material from an uncured low-k dielectric film
US20090226694A1 (en) * 2008-03-06 2009-09-10 Tokyo Electron Limited POROUS SiCOH-CONTAINING DIELECTRIC FILM AND A METHOD OF PREPARING
US8058183B2 (en) * 2008-06-23 2011-11-15 Applied Materials, Inc. Restoring low dielectric constant film properties
US20090324928A1 (en) * 2008-06-26 2009-12-31 Vijayakumar Ramachandrarao Forming ultra low dielectric constant porous dielectric films and structures formed thereby
US20100015816A1 (en) * 2008-07-15 2010-01-21 Kelvin Chan Methods to promote adhesion between barrier layer and porous low-k film deposited from multiple liquid precursors
US20100065758A1 (en) * 2008-09-16 2010-03-18 Tokyo Electron Limited Dielectric material treatment system and method of operating
US8895942B2 (en) * 2008-09-16 2014-11-25 Tokyo Electron Limited Dielectric treatment module using scanning IR radiation source
JP5671220B2 (ja) * 2009-08-25 2015-02-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8492239B2 (en) 2010-01-27 2013-07-23 International Business Machines Corporation Homogeneous porous low dielectric constant materials
US8314005B2 (en) 2010-01-27 2012-11-20 International Business Machines Corporation Homogeneous porous low dielectric constant materials
US8242460B2 (en) * 2010-03-29 2012-08-14 Tokyo Electron Limited Ultraviolet treatment apparatus
US8541301B2 (en) 2011-07-12 2013-09-24 International Business Machines Corporation Reduction of pore fill material dewetting
US8927430B2 (en) 2011-07-12 2015-01-06 International Business Machines Corporation Overburden removal for pore fill integration approach
US8637412B2 (en) 2011-08-19 2014-01-28 International Business Machines Corporation Process to form an adhesion layer and multiphase ultra-low k dielectric material using PECVD
US8828489B2 (en) 2011-08-19 2014-09-09 International Business Machines Corporation Homogeneous modification of porous films
US8846528B2 (en) * 2011-11-29 2014-09-30 Taiwan Semiconductor Manufacturing Company, Ltd. Method of modifying a low k dielectric layer having etched features and the resulting product
US20130256894A1 (en) * 2012-03-29 2013-10-03 International Rectifier Corporation Porous Metallic Film as Die Attach and Interconnect
CN104752333B (zh) * 2013-12-31 2018-07-03 中芯国际集成电路制造(上海)有限公司 第一金属互连层的制作方法
US9460997B2 (en) 2013-12-31 2016-10-04 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure for semiconductor devices
JP6929279B2 (ja) * 2015-10-22 2021-09-01 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ＳｉＯおよびＳｉＮを含む流動性膜を堆積させる方法
US10192775B2 (en) 2016-03-17 2019-01-29 Applied Materials, Inc. Methods for gapfill in high aspect ratio structures
US11133178B2 (en) 2019-09-20 2021-09-28 Applied Materials, Inc. Seamless gapfill with dielectric ALD films

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5858200A (en) * 1996-05-30 1999-01-12 Bridgestone Metalpha Corporation Method of and apparatus for manufacturing metallic fiber and the twine of metallic fibers, and method of coloring metallic fiber and the twine of metallic fibers
US6051321A (en) * 1997-10-24 2000-04-18 Quester Technology, Inc. Low dielectric constant materials and method
US6316167B1 (en) * 2000-01-10 2001-11-13 International Business Machines Corporation Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof
US6974766B1 (en) * 1998-10-01 2005-12-13 Applied Materials, Inc. In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
FR2802336B1 (fr) * 1999-12-13 2002-03-01 St Microelectronics Sa Structure d'interconnexions de type damascene et son procede de realisation
US6953984B2 (en) * 2000-06-23 2005-10-11 International Business Machines Corporation Hydrogenated oxidized silicon carbon material
US6768200B2 (en) * 2000-10-25 2004-07-27 International Business Machines Corporation Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device
TW462085B (en) * 2000-10-26 2001-11-01 United Microelectronics Corp Planarization of organic silicon low dielectric constant material by chemical mechanical polishing
JP3545364B2 (ja) * 2000-12-19 2004-07-21 キヤノン販売株式会社 半導体装置及びその製造方法
US6703324B2 (en) * 2000-12-21 2004-03-09 Intel Corporation Mechanically reinforced highly porous low dielectric constant films
TW477029B (en) * 2001-02-21 2002-02-21 Nat Science Council Method of reducing thick film stress of spin on dielectric and the resulting sandwich dielectric structure
US20020163062A1 (en) * 2001-02-26 2002-11-07 International Business Machines Corporation Multiple material stacks with a stress relief layer between a metal structure and a passivation layer
US6713874B1 (en) * 2001-03-27 2004-03-30 Advanced Micro Devices, Inc. Semiconductor devices with dual nature capping/arc layers on organic-doped silica glass inter-layer dielectrics
US6518646B1 (en) * 2001-03-29 2003-02-11 Advanced Micro Devices, Inc. Semiconductor device with variable composition low-k inter-layer dielectric and method of making
JP3749469B2 (ja) * 2001-10-18 2006-03-01 富士通株式会社 ＳｉＣ：Ｈ膜の成膜方法と半導体装置の製造方法
US20030134495A1 (en) * 2002-01-15 2003-07-17 International Business Machines Corporation Integration scheme for advanced BEOL metallization including low-k cap layer and method thereof
US20040137153A1 (en) * 2002-04-16 2004-07-15 Michael Thomas Layered stacks and methods of production thereof
US6815332B2 (en) * 2002-10-30 2004-11-09 Asm Japan K.K. Method for forming integrated dielectric layers
US6949456B2 (en) * 2002-10-31 2005-09-27 Asm Japan K.K. Method for manufacturing semiconductor device having porous structure with air-gaps
US7288292B2 (en) * 2003-03-18 2007-10-30 International Business Machines Corporation Ultra low k (ULK) SiCOH film and method
US7132374B2 (en) * 2004-08-17 2006-11-07 Cecilia Y. Mak Method for depositing porous films

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US7265437B2 (en) 2007-09-04
EP1856735A2 (en) 2007-11-21
WO2006096813A3 (en) 2006-12-28
CN101138085A (zh) 2008-03-05
US20100028695A1 (en) 2010-02-04
JP5398258B2 (ja) 2014-01-29
EP1856735A4 (en) 2009-07-15
TW200641177A (en) 2006-12-01
JP2008537639A (ja) 2008-09-18
US20060202311A1 (en) 2006-09-14
US7998880B2 (en) 2011-08-16
TWI414623B (zh) 2013-11-11
WO2006096813A2 (en) 2006-09-14

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