CN101137578A - 高纯硅的制备方法 - Google Patents
高纯硅的制备方法 Download PDFInfo
- Publication number
- CN101137578A CN101137578A CNA2006800074437A CN200680007443A CN101137578A CN 101137578 A CN101137578 A CN 101137578A CN A2006800074437 A CNA2006800074437 A CN A2006800074437A CN 200680007443 A CN200680007443 A CN 200680007443A CN 101137578 A CN101137578 A CN 101137578A
- Authority
- CN
- China
- Prior art keywords
- oxygenant
- silicon
- cooling
- temperature
- molten silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010703 silicon Substances 0.000 title claims abstract description 223
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 223
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 93
- 229910052796 boron Inorganic materials 0.000 claims abstract description 93
- 238000001816 cooling Methods 0.000 claims abstract description 76
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 28
- 238000006243 chemical reaction Methods 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 95
- 238000000034 method Methods 0.000 claims description 82
- 239000012774 insulation material Substances 0.000 claims description 44
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 28
- 230000003647 oxidation Effects 0.000 claims description 25
- 239000000112 cooling gas Substances 0.000 claims description 23
- 230000001590 oxidative effect Effects 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 16
- 235000017550 sodium carbonate Nutrition 0.000 claims description 14
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 14
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 12
- 238000007664 blowing Methods 0.000 claims description 12
- 239000000292 calcium oxide Substances 0.000 claims description 11
- 239000002075 main ingredient Substances 0.000 claims description 11
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 9
- -1 alkaline earth metal carbonate Chemical class 0.000 claims description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 8
- 239000011148 porous material Substances 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229960001866 silicon dioxide Drugs 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims description 6
- 239000000395 magnesium oxide Substances 0.000 claims description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 6
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 6
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 6
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 6
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 claims description 4
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 claims description 4
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims description 4
- 229910001860 alkaline earth metal hydroxide Inorganic materials 0.000 claims description 4
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 claims description 4
- 239000000920 calcium hydroxide Substances 0.000 claims description 4
- 229910001861 calcium hydroxide Inorganic materials 0.000 claims description 4
- 235000012204 lemonade/lime carbonate Nutrition 0.000 claims description 4
- 239000001095 magnesium carbonate Substances 0.000 claims description 4
- 235000014380 magnesium carbonate Nutrition 0.000 claims description 4
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 claims description 4
- 229910000021 magnesium carbonate Inorganic materials 0.000 claims description 4
- 229960001708 magnesium carbonate Drugs 0.000 claims description 4
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 claims description 4
- 239000000347 magnesium hydroxide Substances 0.000 claims description 4
- 229910001862 magnesium hydroxide Inorganic materials 0.000 claims description 4
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 claims description 4
- 235000015320 potassium carbonate Nutrition 0.000 claims description 4
- 239000007800 oxidant agent Substances 0.000 abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 208
- 238000000746 purification Methods 0.000 description 58
- 239000007789 gas Substances 0.000 description 35
- 239000002893 slag Substances 0.000 description 35
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 24
- 229910052786 argon Inorganic materials 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 239000008187 granular material Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000011734 sodium Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 238000011049 filling Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- 238000007711 solidification Methods 0.000 description 5
- 230000008023 solidification Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 241000196324 Embryophyta Species 0.000 description 4
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 4
- 230000001413 cellular effect Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000011856 silicon-based particle Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 3
- 239000011449 brick Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004927 fusion Effects 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- 238000009617 vacuum fusion Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 241000209456 Plumbago Species 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000004568 cement Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000004453 electron probe microanalysis Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000006353 environmental stress Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012264 purified product Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP062557/2005 | 2005-03-07 | ||
JP2005062557A JP4741860B2 (ja) | 2005-03-07 | 2005-03-07 | 高純度のシリコンの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101137578A true CN101137578A (zh) | 2008-03-05 |
Family
ID=36500910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2006800074437A Pending CN101137578A (zh) | 2005-03-07 | 2006-02-28 | 高纯硅的制备方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20080274031A1 (ja) |
EP (1) | EP1910225A2 (ja) |
JP (1) | JP4741860B2 (ja) |
KR (1) | KR20080003797A (ja) |
CN (1) | CN101137578A (ja) |
BR (1) | BRPI0609259A2 (ja) |
NO (1) | NO20075026L (ja) |
WO (1) | WO2006095663A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101941700A (zh) * | 2010-09-15 | 2011-01-12 | 陈应天 | 一种从工业硅中去除硼杂质的方法 |
CN102153090A (zh) * | 2011-05-19 | 2011-08-17 | 厦门大学 | 一种冶金法n型多晶硅片硼吸杂方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5277654B2 (ja) * | 2008-02-15 | 2013-08-28 | 住友化学株式会社 | ホウ素添加シリコンの製造方法 |
JP5131860B2 (ja) * | 2009-06-01 | 2013-01-30 | シャープ株式会社 | シリコンシートおよび太陽電池 |
WO2011009017A2 (en) * | 2009-07-17 | 2011-01-20 | Boston Silicon Materials Llc | Process for the formation of silicon metal sheets |
CN101792143B (zh) * | 2010-03-24 | 2011-12-21 | 姜学昭 | 提纯硅的方法 |
DE102012109248A1 (de) * | 2012-09-28 | 2014-04-03 | Fluxana GmbH & Co. KG | Herstellung von Analyseproben |
US10455680B2 (en) * | 2016-02-29 | 2019-10-22 | Asml Netherlands B.V. | Method and apparatus for purifying target material for EUV light source |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1100218B (it) * | 1978-11-09 | 1985-09-28 | Montedison Spa | Procedimento per la purificazione di silicio |
DE2933164A1 (de) * | 1979-08-16 | 1981-02-26 | Consortium Elektrochem Ind | Verfahren zum reinigen von rohsilicium |
JP2538044B2 (ja) * | 1989-04-07 | 1996-09-25 | 川崎製鉄株式会社 | 金属シリコン脱炭用ランスおよび脱炭方法 |
JP3205352B2 (ja) * | 1990-05-30 | 2001-09-04 | 川崎製鉄株式会社 | シリコン精製方法及び装置 |
JP3000109B2 (ja) * | 1990-09-20 | 2000-01-17 | 株式会社住友シチックス尼崎 | 高純度シリコン鋳塊の製造方法 |
JPH09202611A (ja) * | 1996-01-25 | 1997-08-05 | Kawasaki Steel Corp | 金属シリコン中のボロン除去方法 |
US5820842A (en) * | 1996-09-10 | 1998-10-13 | Elkem Metals Company L.P. | Silicon refining process |
JPH10324515A (ja) * | 1997-03-24 | 1998-12-08 | Kawasaki Steel Corp | 太陽電池用シリコンの製造方法 |
JPH1149510A (ja) * | 1997-07-31 | 1999-02-23 | Daido Steel Co Ltd | 金属Siの精製方法及びその装置 |
US6368403B1 (en) * | 1997-08-28 | 2002-04-09 | Crystal Systems, Inc. | Method and apparatus for purifying silicon |
US5972107A (en) * | 1997-08-28 | 1999-10-26 | Crystal Systems, Inc. | Method for purifying silicon |
JP2000302432A (ja) * | 1999-04-19 | 2000-10-31 | Shin Etsu Chem Co Ltd | 高純度金属シリコンの精製方法 |
JP4365480B2 (ja) * | 1999-06-07 | 2009-11-18 | 昭和電工株式会社 | 高純度シリコンの製造方法 |
JP4264166B2 (ja) * | 1999-08-20 | 2009-05-13 | 昭和電工株式会社 | ケイ素の精製方法 |
JP2003012317A (ja) * | 2001-06-27 | 2003-01-15 | Daido Steel Co Ltd | シリコンの精製方法 |
US20050139148A1 (en) * | 2002-02-04 | 2005-06-30 | Hiroyasu Fujiwara | Silicon purifying method, slag for purifying silicon and purified silicon |
JP2003238138A (ja) * | 2002-02-20 | 2003-08-27 | Sharp Corp | シリコンの精製方法およびシリコンの精製装置 |
JP2003277040A (ja) * | 2002-03-19 | 2003-10-02 | Sharp Corp | シリコンの精製方法および該方法により精製したシリコンを用いて製造する太陽電池 |
JP4766837B2 (ja) * | 2004-03-03 | 2011-09-07 | 新日鉄マテリアルズ株式会社 | シリコンからのホウ素除去方法 |
JP4880236B2 (ja) * | 2005-03-07 | 2012-02-22 | 新日鉄マテリアルズ株式会社 | 高純度シリコンの製造方法 |
JP4966560B2 (ja) * | 2005-03-07 | 2012-07-04 | 新日鉄マテリアルズ株式会社 | 高純度シリコンの製造方法 |
JP4856973B2 (ja) * | 2005-03-07 | 2012-01-18 | 新日鉄マテリアルズ株式会社 | 高純度シリコンの製造方法 |
-
2005
- 2005-03-07 JP JP2005062557A patent/JP4741860B2/ja not_active Expired - Fee Related
-
2006
- 2006-02-28 CN CNA2006800074437A patent/CN101137578A/zh active Pending
- 2006-02-28 WO PCT/JP2006/304194 patent/WO2006095663A2/en active Application Filing
- 2006-02-28 KR KR1020077022727A patent/KR20080003797A/ko not_active Application Discontinuation
- 2006-02-28 BR BRPI0609259-4A patent/BRPI0609259A2/pt not_active IP Right Cessation
- 2006-02-28 US US11/885,801 patent/US20080274031A1/en not_active Abandoned
- 2006-02-28 EP EP06715253A patent/EP1910225A2/en not_active Withdrawn
-
2007
- 2007-10-04 NO NO20075026A patent/NO20075026L/no not_active Application Discontinuation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101941700A (zh) * | 2010-09-15 | 2011-01-12 | 陈应天 | 一种从工业硅中去除硼杂质的方法 |
CN101941700B (zh) * | 2010-09-15 | 2014-04-30 | 北京应天阳光太阳能技术有限公司 | 一种从工业硅中去除硼杂质的方法 |
CN102153090A (zh) * | 2011-05-19 | 2011-08-17 | 厦门大学 | 一种冶金法n型多晶硅片硼吸杂方法 |
CN102153090B (zh) * | 2011-05-19 | 2012-12-12 | 厦门大学 | 一种冶金法n型多晶硅片硼吸杂方法 |
Also Published As
Publication number | Publication date |
---|---|
US20080274031A1 (en) | 2008-11-06 |
KR20080003797A (ko) | 2008-01-08 |
NO20075026L (no) | 2007-10-04 |
WO2006095663A3 (en) | 2007-02-08 |
BRPI0609259A2 (pt) | 2010-03-09 |
JP4741860B2 (ja) | 2011-08-10 |
WO2006095663A2 (en) | 2006-09-14 |
JP2006240963A (ja) | 2006-09-14 |
EP1910225A2 (en) | 2008-04-16 |
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