CN101131983B - 连接体和光发送接收模块 - Google Patents

连接体和光发送接收模块 Download PDF

Info

Publication number
CN101131983B
CN101131983B CN2007101402327A CN200710140232A CN101131983B CN 101131983 B CN101131983 B CN 101131983B CN 2007101402327 A CN2007101402327 A CN 2007101402327A CN 200710140232 A CN200710140232 A CN 200710140232A CN 101131983 B CN101131983 B CN 101131983B
Authority
CN
China
Prior art keywords
mentioned
electrode
substrate
optical element
protuberance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007101402327A
Other languages
English (en)
Other versions
CN101131983A (zh
Inventor
高井俊明
松岛直树
平野光树
安田裕纪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Publication of CN101131983A publication Critical patent/CN101131983A/zh
Application granted granted Critical
Publication of CN101131983B publication Critical patent/CN101131983B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4219Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4236Fixing or mounting methods of the aligned elements
    • G02B6/4238Soldering
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4219Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4228Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements
    • G02B6/423Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements using guiding surfaces for the alignment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/02002Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0203Containers; Encapsulations, e.g. encapsulation of photodiodes
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4204Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4214Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0556Disposition
    • H01L2224/05568Disposition the whole external layer protruding from the surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05573Single external layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061Disposition
    • H01L2224/0612Layout
    • H01L2224/0613Square or rectangular array
    • H01L2224/06131Square or rectangular array being uniform, i.e. having a uniform pitch across the array
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/113Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134Stud bumping, i.e. using a wire-bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/1302Disposition
    • H01L2224/13022Disposition the bump connector being at least partially embedded in the surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16238Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199Material of the matrix
    • H01L2224/2929Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8112Aligning
    • H01L2224/81136Aligning involving guiding structures, e.g. spacers or supporting members
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81191Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81192Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812Applying energy for connecting
    • H01L2224/81201Compression bonding
    • H01L2224/81205Ultrasonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8138Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/81385Shape, e.g. interlocking features
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8138Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/81399Material
    • H01L2224/81498Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/81499Material of the matrix
    • H01L2224/8159Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8138Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/81399Material
    • H01L2224/81498Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/81598Fillers
    • H01L2224/81599Base material
    • H01L2224/816Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0103Zinc [Zn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01046Palladium [Pd]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01087Francium [Fr]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01327Intermediate phases, i.e. intermetallics compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12043Photo diode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30105Capacitance

Landscapes

  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Light Receiving Elements (AREA)
  • Led Device Packages (AREA)
  • Wire Bonding (AREA)

Abstract

本发明的目的在于提供一种可良好地连接,并能实现高的耦合效率的光元件的接合构造,和使用了该接合构造的光配线装置。在光元件的搭载构造中,具有在表面形成凸部等的电极的光元件和在表面形成了与该光元件接合的电极的衬底。该衬底的电极的构造是大致环状或切去大致环状的一部分的缺口形状,光元件和衬底做成以凸部等的接合材料插入到该开口部的形状相接合的构造。

Description

连接体和光发送接收模块 
技术领域
本发明涉及连接体和光发送接收模块,尤其涉及通过面朝下接合安装的连接体及光发送接收模块。 
背景技术
近年的高速传输线路由于(1)宽频带,(2)耐电磁噪音性能优良,(3)配线体积小且重量轻等原因,采用光配线代替电气配线的开发正在展开。对于光配线,作为其最重要的因素之一,可以列举半导体激光器,光电二极管等光元件和光纤、光波导等光传输线路的光耦合结构。为了得到高的耦合效率,光元件和光传输线路即使在多模传输场合,在其对位精度也要求数十μm的搭载精度。另外,在进行温度循环及高温高湿等可靠性试验之后,也不能引起位置偏移或剥离。另一方面,从代替电气配线这样的观点来看,大前提是光配线具有低价格。因此,必须尽可能将材料本身价格及组装工时抑制得很低。 
可以考虑作为满足上述要求的一种光元件的搭载方法有如专利文献1-日本特开2005-164801号公报所列举的方法,即:通过倒装片式接合将面发光激光器(垂直腔面发射激光器,VCSEL:Vertical Cavity Surface-EmittingLaser),面入射型光电二极管的面光发送接收元件安装在衬底上,并与位于衬底下方的光传输线路光耦合的方法。由此,可以用与现有的电子电路的倒装片安装相当的工序形成光元件的接合构造。 
另外,如专利文献2-日本特开2003-298167号公报所述,在光发送接收部分形成环电极并进行倒装片式接合。由此,实现了防止因光信号的串扰和未充满树脂的流入引起的损耗增加。 
再有,在专利文献3-日本特开2006-091241号公报中,记载有抗噪音性能优良,可进行高速、大容量、高品质信息传输的光电复合型配线零部件。 
作为非专利文献3记载的通过面朝下搭载光元件的技术,有Au凸部连接、软钎料连接等。但是,专利文献3对以下几个所产生的问题却没有记载。 
①为了将光元件和光传输线路高效地进行光耦合,必须能够精密地控制光元件和衬底的平行度,但要达到这样的平行度是困难的。尤其是在电极的接合中使用Au凸部的场合,由于凸部前端的高度误差极大,所以必须增加将各凸部的高度对齐用的工序。 
②光元件的电极做成直径φ100μm左右,间隔数百μm,比一般电子电路零部件的电极更小。因此,接合剂的供给量是微量,该供给量的控制很困难。因而,接合材料的供给过剩的场合,在搭载光元件时,产生因接合材料流出到光路中而增大损耗以及电极间短路之类的问题。 
③光元件和光传输线路的距离是决定系统的光耦合效率的重要因素。该距离由连接光元件和光传输线路的接合剂决定。即,由于接合剂存在,则光元件和光传输线路的距离相应增大。另外,由于接合条件、供给量的误差,则导致发光元件的光输出以及受光元件的灵敏度下降、变化等。 
发明内容
本发明的目的就在于解决上述问题。本发明的目的在于提供一种可良好地连接,并能实现高的耦合效率的光元件的接合构造,和使用了该接合构造的光配线装置。 
为了解决上述问题,下功夫在电极制造上。具体的是,在连接了在表面形成电极的光元件和在表面具有形成了与光元件的电极接合的电极的衬底的光模块中,衬底的电极在与光元件的电极连接的区域具有凹部。 
另外,上述问题可以通过连接体得到解决。该连接体包括在一面形成了第第一电极的光元件以及在一面上形成了与光元件的第一电极连接的第二电极的衬底,该第一电极形成有导体凸部,该衬底的该第二电极具有凹部,借助于该凹部和该导体凸部与第一电极连接。 
再有,上述问题可以通过光发送接收模块得到解决。该光发送接收模块包括:在衬底的一面上连接的面发光元件和面受光元件,以及形成于衬底的另一面上并光学连接面发光元件和面受光元件的光波导,上述面发光元件和上述面受光元件分别具有导体凸部,将面发光元件和面受光元件连接的衬底的电极具有凹部,借助于该凹部和该导体凸部与面发光元件和面受光元件连接。 
根据本发明,可以降低光元件对衬底的安装高度和高度的波动。 
附图说明
图1是说明使用了Au凸部的光元件和衬底的连接图。 
图2是说明衬底的连接部的俯视图。 
图3是说明光发送接收模块的剖视图。 
图4是说明使用了Au凸部的光元件和衬底的连接图。 
图5是说明使用了Au凸部的光元件和衬底的连接图。 
图6是说明使用了软钎料的光元件和衬底的连接图。 
图7是说明使用了Au凸部的光元件和衬底的连接图。 
其中:1-衬底,2-光元件,3-光波导层,5-未充满树脂,7-封固树脂,10-衬底,11-电气配线,12-电极,13-凹部,14-开孔部,21-电极,22-导体凸部,23-发光点或受光点,24-接合材料,31-光波导芯,32-光波导包层,33-45°反射镜,40-VCSEL,45-驱动器IC,60-PD,65-前置放大器,70-光纤。 
具体实施方式
下面,参照附图用实施例对本发明的实施方式进行说明。图中,对实质上相同的部位给以相同的参照标号以免重复说明。 
实施例1 
用图1-图3说明实施例1。这里,图1是说明使用了Au凸部的光元件和衬底的连接图。图2是说明衬底的连接部的俯视图。图3是说明光发送接收模块的剖视图。图1(a)-图1(c)是说明截面的图,图1(d)是透视俯视图。在说明截面的图中,衬底的上面和下面不在相同的剖切位置,以便同行业人员易于理解。即,图1中,衬底的上面是第一连接位置、光元件的发光点或受光点及第二连接位置的展开截面。另外,截面以外未进行图示,为了图示的简便省略了剖面线。并且,衬底的下面是光元件的发光点或受光点正下方的波导部分的截面。这些在以下的实施例中都是相同的。 
图1(a)中,在衬底1的表面上形成有电气配线11和与该电气配线连接的电极12。实施例1中,衬底1使用的是用了聚酰亚胺膜的柔性衬底。电气配线和电极12的构件,在这里是以厚度为12μm的轧制铜箔为主体,表面镀了厚2-5μmNi和0.3μmAu的构造。有关配线材料虽然也可以使用其它材料,但作为条件希望满足作为电气配线一般所要求条件如:电阻不高,廉价,容易加工等。表面的金属包层取决于接合方式。实施例1由于采用使用了Au凸部 的Au-Au接合,因而表面金属包层使用了Au。在Al凸部的场合,作为表面金属包层可以采用Al。 
在衬底1的背面具备光传输线路。实施例1中,形成了由使用了树脂的光波导芯31和光波导金属包层32a、32b构成的光波导层3。光波导的前端部分形成了45°反射镜33,在光元件2为发光元件时,将纸面上从上到下的光束引导到纸面上从左到右的平行的光波导中。同样,在光元件2为受光元件时,反射镜33将纸面上从右到左的光从纸面上的下方反射到上方并引导到光元件2中。 
衬底的电极12,在其中央附近存在凹部13,并呈大致环状。该凹部在配线形成后,通过蚀刻等形成。电极12的形状,从上面观察为圆环状,但如图2(a)所示,也可将其做成矩形状。另外,如图2(b)所示,也可以将电极12的外周做成矩形,而将凹部13做成圆形。再有,如图2(c)所示,也可以将环状的一部分做成切口形状。另外,凹部13既可以在镀Ni/Au(Ni→Au)之后通过蚀刻形成,也可以在对轧制Cu进行蚀刻后再镀Ni/Au形成。 
另一方面,在光元件2的电极21上形成有由Au构成的导体凸部22。导体凸部22在引线接合的第一次接合后切断引线而形成。导体凸部22在其形成的时刻,各凸部的高度存在误差。因此,在设置于平坦的场所的场合,光元件相对于衬底表面倾斜的可能性高。实施例1中,导体凸部22的前端部存在可插入到衬底1的电极12的凹部13中那样的位置关系。即,凹部13的直径(宽度)最好比凸部的前端部直径(宽度)更大。凸部前端部的直径为25μm时,凹部13的直径以40μm-70μm左右为宜。另外,凹部13底部的厚度最好是1-2μm,但也可以没有,对此将在实施例2中说明。将轧制Cu进行蚀刻后再镀Ni/Au的场合,底的厚度为3-6μm,但也可以变化。 
图1(b)是将在光元件2的电极21上所形成的导体凸部22插入到衬底的电极凹部13中的状态。在该时刻,衬底的电极12的与导体凸部22的接触部分则为凹部13的端部。在没有凹部时,虽以面接触,但利用图1的凹部则以圆状的线接触。由于接触面积减小,即使加在光元件上的载荷很小,对接触部也施加了足够的压力,其结果进行了可靠的接合。换言之,由于可以以小载荷接合,所以可以防止光元件因受到载荷而劣化。再有,在使用超声波接合进 行接合的场合,即使超声波输出功率很小也能实现良好的连接,因而,仍能得到防止损坏光元件2的效果。 
图1(c)是光元件2和衬底1已接合的状态。若利用超声波接合进行接合,则导体凸部22发生变形,产生Au-Au扩散,使导体凸部22和衬底1的电极12接合。这时,由于导体凸部22的前端部在凹部13内变形,因而在接合前存在的凸部高度误差在此被消除。另外,前端部以外的导体凸部22的一部分也容纳在凹部中。因此,在光元件2的电极和衬底1的电极12的顶上平坦部分之间存在的凸部材料量将比现有结构少。从而,衬底1和光元件2的距离缩小,即在衬底1上形成的光波导芯31和光元件2的距离变短,提高了光耦合效率。 
图1(d)是光元件2和衬底1已接合的状态。图1(d)中,光元件2以虚线表示。光元件2和衬底1相互以4点连接。在光元件2的中央部位形成发光点或受光点23。在发光点或受光点的正下方形成未图示的反射镜33和光波导3。 
此外,衬底1的材质不限于聚酰亚胺,也可以是通信波长用的其它透明树脂。本说明书中,有时将导体凸部称为接合材料。接合材料包括导体凸部,软钎料,导电性粘结剂等,但不限于这些。 
图3中,在衬底1上面的配线部上搭载有VCSEL40和驱动VCSEL40的驱动器IC45,光电二极管(PD)60和以低噪音放大来自PD60的微小信号的前置放大器65。在VCSEL40、PD60和衬底1之间充填未充满树脂5,以缓和加在连接部上的应力。VCSEL40、驱动器IC45、PD60、前置放大器65用封固树脂7包覆。 
在衬底1的下面,设置光波导3,在VCSEL40的发光点正下方、PD60的受光点正下方将光波导3切割90°,以形成反射镜33。 
输入了未图示的电信号的驱动器IC45对VCSEL40的激光进行调制。来自VCSEL40的光信号由VCSEL之下的反射镜33耦合到光波导3。光信号由PD60之下的反射镜33反射并由PD60接收。PD60将光信号转换为电信号,由前置放大器65放大。由于衬底1和光波导3具有柔性,也可适用于对折式手机。 
此外,图3的结构也可应用于其它实施例。 
实施例2。 
参照图4说明实施例2。这里,图4是说明使用了Au凸部的光元件和衬底的连接图。图4(a)-图4(c)是截面说明图。图4(d)是透视俯视图。 
图4(a)中,在FR-4衬底10的上面,在衬底电极12的中央附近具有不存在电极构件的开孔部14,其呈大致环状。这种构造在对配线和电极实施图案化时同时形成。另外,在与光元件2的发光点或受光点相对的衬底10上形成有开孔部10a。在衬底10的下面连接着光纤70,光纤70的端面研磨成45°并配置在开孔部10a的正下方。另外,开孔部14的形状不限于大致环状,也可以如图2(a)所示做成矩形状。另外,如图2(b)所示,也可以将电极12的外周做成矩形,而将开孔部1 4做成圆形。再有,如图2(c)所示,也可以将环状的一部分做成切口形状。 
图4(b)是将在光元件2上所形成的导体凸部22插入到衬底的电极开孔部1 4中的状态。这里,在实施例2中由于插入导体凸部2 2的电极开孔部14不存在电极构件,由于能由开孔部14吸收比实施例1更大的凸部高度的误差,因而有利于确保光元件2和衬底10的平行度。另外,可加大能插入到开孔部14中的凸部长度,并可缩短衬底10和光元件2的距离。 
此外,实施例2中作为衬底10虽然使用了由FR-4构成的印刷电路板,但也可以使用氧化铝等陶瓷,并可以使用利用了聚酰亚胺的柔性衬底。 
实施例3 
参照图5说明实施例3。这里,图5是说明使用了Au凸部的光元件和衬底的连接图。图5(a)-图5(c)是截面说明图。图5(d)是透视俯视图。 
图5(d)中,衬底1的电极12是通过蚀刻去除以发光点或受光点23为中心的正方形内的构造。这种电极构造可以通过蚀刻与配线11同时形成。 
如图5(a)所示,在光元件2上形成有由Au构成的导体凸部22。如图5(b)所示,光元件2在所形成的导体凸部22与衬底电极12端部接触的状态下通过超声波接合进行接合。实施例3中,导体凸部22处于只以衬底电极12的两边接触的状态。因此,与实施例2相比,导体凸部22与衬底电极1 2的接触面积变小。即,超声波接合时,加在光元件2上的载荷即使再小,也有足够的压力加在接触部上。因此,与实施例2相比,有利于进一步避免光元件2 的损坏。 
图5(c)表示光元件2和衬底1已接合的状态。实施例3中,虽然导体凸部22在距光元件2的发光点或受光点23较远一侧与衬底电极12接触,但不言而喻,也可以在靠近发光点或受光点23侧与衬底电极12接触。 
实施例4 
参照图6说明实施例4。这里,图6是说明使用了软钎料的光元件和衬底的连接图。图6(a)-图6(c)是截面说明图。图6(d)是透视俯视图。 
图6(a)中,在聚酰亚胺衬底1上形成的轧制Cu通过蚀刻形成配线11和中央的孔部14及电极12。利用印刷方法对电极12提供接合材料24。但是,由于在电极12上形成有孔部14,因而在从上方提供的接合材料24之下有可能存在空隙。 
图6(b)中,通过真空脱气以接合材料24充填电极12的孔部14的内部。实施例4中,作为接合材料24虽使用Sn-1Ag-57Bi软钎料,但软钎料不必特别限定,并且也可以使用导电性粘结剂。但是,在衬底1使用聚酰亚胺,在该衬底1的背面上形成有树脂构成的光波导层3。在使用这样由有机材料构成的衬底的情况下,作为接合材料使用软钎料的场合,希望使用In-3.5Ag、Sn-Zn等熔点比有机材料的耐热温度更低的软钎料。另外,在使用了导电性粘结剂的场合也同样,希望导电性粘结剂的硬化温度比有机材料的耐热温度更低。 
如图6(a)和图6(b)所示,接合材料24供给到衬底电极的孔部14。由此,可能过量地供给孔部14的体积相当部分的接合材料,在对微小区域供给接合材料时,则供给量的控制变得容易。这是因为,当接合材料的供给量误差一定时,供给量的绝对量多者,因供给量的误差引起的变动比例较小。 
另外,在衬底1的衬底电极12和光元件2A的元件电极21的表面上制作Au金属包层以便确保软钎料的浸润性。一般,在Au混入到软钎料中时,在Au和软钎料之间形成金属间化合物。该金属间化合物虽然形成在衬底电极12和元件电极21与软钎料24的界面上,但由于该金属间化合物较硬,其应力缓冲效果较弱,因而使接合的可靠性降低。但是,在实施例4中,由于存在大量的软钎料,可以抑制在电极界面上所形成的Au混入到软钎料中的混入比。因此,通过Au的过量混入可以防止软钎料连接可靠性的劣化。 
实施例4中也与上述实施例同样,衬底电极12的形状如图2(c)所示,可以做成环状的一部分具有缺口的形状。另外,为了避免因软钎料的流出引起的光路干涉,环的缺口位置希望在与光元件2A的发光点23(或受光点)相反一侧。 
图6(c)是光元件2A与衬底1已接合的状态。光元件2A虽用接合剂搭载在衬底1上,但由于这时在凹部中积有接合剂,因而,可能使光元件的电极21和衬底的电极12之间的接合剂较薄。另外,即使是环状的一部分为缺口形状,通过将软钎料从该缺口部分挤出,接合部的接合材料也变薄。其结果,衬底1和光元件2A的距离变短,光耦合效率增大。 
另外,也可以在衬底电极12和元件电极21的周围形成防止软钎料向横向(水平方向)流动的金属包层。接合材料的供给方法不限于印刷法,也可以是注射供给法,这些均不受限制。 
实施例5 
参照图7说明实施例5。这里,图7是说明使用了Au凸部的光元件和衬底的连接图。图7(a)-图7(c)是截面说明图。图7(d)是透视俯视图。这里,实施例5的接合构造为将背面出射型的光元件2B接合在实施例1的接合构造中的结构。 
如图7(a)所示,实施例5中作为光元件2B使用了发光点23在元件电极21的形成面(活性面)的背面存在的背面出射型的面发光激光器。在元件电极21上形成了由Au构成的导体凸部22。如图7(b)和图7(c)所示,通过将导体凸部22插入凹部13并使用超声波接合,则可保持光元件2B和衬底1的平行度而进行接合。其结果,从光元件2B出射的光对衬底1垂直的出射。由于从光元件2B出射的光对衬底1垂直的出射并入射到另外的光学系统中,因而容易对光学系统进行定位。 
此外,本实施例中,作为衬底10虽然使用由FR-4构成的印刷电路板,但很显然衬底10构件也可以使用由氧化铝等陶瓷构成的硬的衬底,并可以使用利用了聚酰亚胺的柔性衬底。凹部13的形状不限于大致的环状,如图2(a)所示,也可将其做成矩形状。另外,如图2(b)所示,也可以将电极12的外周做成矩形,而将凹部13做成圆形。再有,如图2(c)所示,也可以将环状 的一部分做成切口形状。再有,也可以是背面受光型的受光元件。 
根据上述的实施例1-实施例5,可以预期如下所述的效果。在接合剂为由Au等构成的场合是: 
①可以在不进行将凸部的高度对齐的工序的情况下确保光元件和衬底的平行度。     
②凸部和衬底的电极是线接触而非面接触,因而,即使接合时的载荷很小,在接合部也产生很大的压力,可确保良好的接合性。换言之,通过施加小的载荷,可以避免光元件劣化的危险。 
③由于Au凸部过量的Au进行到衬底的电极中央的开口部或凹部,因而可以尽可能减少在光元件的电极和衬底的电极的平坦部存在的凸部。其结果,光耦合效率提高。 
在接合剂使用了软钎料膏或导电性粘结剂膏的场合是: 
①通过将膏状料供给开口部或凹部,与现有技术相比可供给更多的接合剂软钎料。因此,膏料的供给量更容易控制。 
②由于能防止膏料流出到电极之外,因而可以避免短路等事故的发生。 
③由于接合剂积存在开口部,因而可以使光元件的电极和衬底的电极之间的接合剂减薄。其结果,光耦合效率提高。 
④使用软钎料时,由于与过去相比存在过量的软钎料,由于能抑制在用软钎料接合时在电极表面上形成的Au混入软钎料中的混入比,因而可以避免因Au的过量混入引起的软钎料可靠性的劣化。 

Claims (8)

1.一种连接体,包括一面形成了第一电极的光元件和在一面形成了与上述光元件的上述第一电极连接的第二电极的衬底,其特征在于:
上述第一电极形成有具备凸状的前端部的导体凸部,
上述衬底的上述第二电极具有直径大于上述导体凸部的上述前端部直径的凹部,并通过该凹部中插入上述导体凸部的上述前端部借助于上述导体凸部与上述第一电极连接。
2.根据权利要求1所述的连接体,其特征在于:
上述光元件是面发光元件或面受光元件。
3.根据权利要求1所述的连接体,其特征在于:
上述导体凸部是Au凸部。
4.根据权利要求1-3中任何一项所述的连接体,其特征在于:
上述导体凸部,在与上述第2电极连接的状态下,与上述凹部的上面接触。
5.一种光发送接收模块,其包括:连接在衬底的一面上的面发光元件和面受光元件,以及形成于上述衬底的另一面上并对上述面发光元件和上述面受光元件进行光学连接的光波导;其特征在于:
上述面发光元件和上述面受光元件分别具有具备凸状的前端部的导体凸部,
将上述面发光元件和上述面受光元件与上述衬底连接的上述衬底的电极具有直径大于上述导体凸部的上述前端部直径的凹部,并通过该凹部中插入上述导体凸部的上述前端部借助于上述导体凸部与上述面发光元件和上述面受光元件连接。
6.根据权利要求5所述的光发送接收模块,其特征在于:
上述导体凸部是Au凸部。
7.根据权利要求5所述的光发送接收模块,其特征在于:
将驱动上述面发光元件的驱动器和上述面受光元件的输出信号放大器搭载在上述衬底的上述一面上。
8.根据权利要求5-7中任何一项所述的光发送接收模块,其特征在于:上述衬底具有柔性。
CN2007101402327A 2006-08-24 2007-08-06 连接体和光发送接收模块 Expired - Fee Related CN101131983B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006-227690 2006-08-24
JP2006227690A JP4793169B2 (ja) 2006-08-24 2006-08-24 接続体および光送受信モジュール
JP2006227690 2006-08-24

Publications (2)

Publication Number Publication Date
CN101131983A CN101131983A (zh) 2008-02-27
CN101131983B true CN101131983B (zh) 2010-12-01

Family

ID=39129175

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007101402327A Expired - Fee Related CN101131983B (zh) 2006-08-24 2007-08-06 连接体和光发送接收模块

Country Status (3)

Country Link
US (1) US8027553B2 (zh)
JP (1) JP4793169B2 (zh)
CN (1) CN101131983B (zh)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5029193B2 (ja) * 2007-07-31 2012-09-19 日本電気株式会社 光送受信サブアセンブリ、及び光送受信モジュール
JP5276455B2 (ja) * 2009-01-23 2013-08-28 スタンレー電気株式会社 光半導体装置モジュール
WO2011040372A1 (ja) 2009-10-01 2011-04-07 日亜化学工業株式会社 発光装置
KR101199302B1 (ko) * 2009-10-13 2012-11-09 한국전자통신연구원 광 소자 및 그 제조 방법
TWI401825B (zh) * 2009-11-27 2013-07-11 Ind Tech Res Inst 發光二極體晶片的固晶方法及固晶完成之發光二極體
KR100999736B1 (ko) * 2010-02-17 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 라이트 유닛
JP5664905B2 (ja) * 2011-01-18 2015-02-04 日立金属株式会社 光電変換モジュール
US9417418B2 (en) 2011-09-12 2016-08-16 Commscope Technologies Llc Flexible lensed optical interconnect device for signal distribution
JP6005362B2 (ja) * 2012-01-19 2016-10-12 日本航空電子工業株式会社 光モジュール及び光伝送モジュール
JP6107117B2 (ja) * 2012-03-22 2017-04-05 豊田合成株式会社 固体装置及びその製造方法
JP5282838B2 (ja) * 2012-08-07 2013-09-04 日立電線株式会社 光電気変換モジュール
US9753229B2 (en) * 2012-09-28 2017-09-05 Commscope Connectivity Uk Limited Manufacture and testing of fiber optic cassette
WO2014052441A1 (en) 2012-09-28 2014-04-03 Tyco Electronic Uk Ltd. Fiber optic cassette
US9223094B2 (en) 2012-10-05 2015-12-29 Tyco Electronics Nederland Bv Flexible optical circuit, cassettes, and methods
GB2522381B (en) * 2012-12-04 2018-06-13 Univ Southampton Apparatus comprising at least one optical device optically coupled to at least one waveguide on an optical chip
WO2014196175A1 (ja) * 2013-06-07 2014-12-11 パナソニックIpマネジメント株式会社 配線基板およびledモジュール
US9627229B2 (en) * 2013-06-27 2017-04-18 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming trench and disposing semiconductor die over substrate to control outward flow of underfill material
JP5712368B2 (ja) * 2013-09-05 2015-05-07 パナソニックIpマネジメント株式会社 発光装置
US9997685B2 (en) 2013-09-05 2018-06-12 Panasonic Intellectual Property Management Co., Ltd. Light-emitting device
JP6878053B2 (ja) * 2017-03-14 2021-05-26 日本ルメンタム株式会社 光受信モジュール及び光モジュール
WO2019070682A2 (en) 2017-10-02 2019-04-11 Commscope Technologies Llc OPTICAL CIRCUIT AND PREPARATION METHOD
JP2020178000A (ja) * 2019-04-17 2020-10-29 パナソニックIpマネジメント株式会社 光モジュールおよびその製造方法
DE102020126376A1 (de) 2020-10-08 2022-04-14 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Elektrische kontaktanordnung, verfahren für deren herstellung und diese umfassendes optoelektronisches bauteil

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1198013A (zh) * 1997-02-21 1998-11-04 日本电气株式会社 半导体器件及其制造方法
CN1761107A (zh) * 2004-09-22 2006-04-19 日立电线株式会社 光电复合配线部件和使用该部件的电子设备

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3414696B2 (ja) 2000-05-12 2003-06-09 日本電気株式会社 半導体装置のキャリア基板の電極構造
JP4105409B2 (ja) * 2001-06-22 2008-06-25 株式会社ルネサステクノロジ マルチチップモジュールの製造方法
JP4104889B2 (ja) 2002-03-29 2008-06-18 株式会社東芝 光半導体装置
JP2004158701A (ja) * 2002-11-07 2004-06-03 Seiko Epson Corp 素子チップ実装用のバンプ構造及びその形成方法
JPWO2005052666A1 (ja) * 2003-11-27 2008-03-06 イビデン株式会社 Icチップ実装用基板、マザーボード用基板、光通信用デバイス、icチップ実装用基板の製造方法、および、マザーボード用基板の製造方法
JP2005164801A (ja) 2003-12-01 2005-06-23 Nippon Telegr & Teleph Corp <Ntt> 光導波路フィルムおよびその作製方法
JP4409455B2 (ja) * 2005-01-31 2010-02-03 株式会社ルネサステクノロジ 半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1198013A (zh) * 1997-02-21 1998-11-04 日本电气株式会社 半导体器件及其制造方法
CN1761107A (zh) * 2004-09-22 2006-04-19 日立电线株式会社 光电复合配线部件和使用该部件的电子设备

Also Published As

Publication number Publication date
JP2008053423A (ja) 2008-03-06
CN101131983A (zh) 2008-02-27
US8027553B2 (en) 2011-09-27
US20080310854A1 (en) 2008-12-18
JP4793169B2 (ja) 2011-10-12

Similar Documents

Publication Publication Date Title
CN101131983B (zh) 连接体和光发送接收模块
US7411282B2 (en) LSI package provided with interface module, and transmission line header employed in the package
US9025913B2 (en) Interposer for optical module, optical module using the same, method for manufacturing the same
KR101287117B1 (ko) 광전기 복합 배선 모듈 및 그 제조 방법
EP1022822B1 (en) Optical module
EP1723456B1 (en) System and method for the fabrication of an electro-optical module
JP4015440B2 (ja) 光通信モジュール
US20050169596A1 (en) Holder of optical transmission lines and multi-core optical wave-guide
US20090180732A1 (en) Junction Structure Between Optical Element and Substrate, Optical Transmission/Receiving Module, and Method of Manufacturing the Optical Module
WO2009090988A1 (ja) 光モジュール
US10944236B2 (en) Optical unit, fixing mechanism for optical unit, and semiconductor laser module
CN114035287B (zh) 一种光模块
CN102736195A (zh) 光模块、光模块的制造方法及光通信装置
US20050280010A1 (en) Optoelectronic device packaging assemblies and methods of making the same
KR100499005B1 (ko) 다채널 블록형 광원소자가 패키징된 인쇄회로기판
CN105339820A (zh) 光模块用部件、光模块以及电子设备
US7901146B2 (en) Optical module, optical transmission device, and surface optical device
US20050201668A1 (en) Method of connecting an optical element at a slope
US8280203B2 (en) Parallel optical communications device having weldable inserts
JP6260167B2 (ja) 光電融合モジュール
US8687372B2 (en) Flexible circuit assembly with wire bonding
JP2001007352A (ja) 光・電気混載モジュール
US20220262962A1 (en) Optoelectronic module package
US20050129370A1 (en) Ferrule for connecting optical fibers
JP2017058606A (ja) 光モジュール及び光モジュールの製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20101201

Termination date: 20210806