CN101123232B - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
- Publication number
- CN101123232B CN101123232B CN2007101367944A CN200710136794A CN101123232B CN 101123232 B CN101123232 B CN 101123232B CN 2007101367944 A CN2007101367944 A CN 2007101367944A CN 200710136794 A CN200710136794 A CN 200710136794A CN 101123232 B CN101123232 B CN 101123232B
- Authority
- CN
- China
- Prior art keywords
- semiconductor chip
- electrode body
- thermal stress
- thermal
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 252
- 230000008646 thermal stress Effects 0.000 claims abstract description 97
- 239000010949 copper Substances 0.000 claims description 33
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 30
- 229910052802 copper Inorganic materials 0.000 claims description 27
- 239000002131 composite material Substances 0.000 claims description 25
- 230000015572 biosynthetic process Effects 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 21
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 14
- 229910052750 molybdenum Inorganic materials 0.000 claims description 14
- 239000011733 molybdenum Substances 0.000 claims description 14
- 230000000116 mitigating effect Effects 0.000 claims description 13
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 12
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 238000004382 potting Methods 0.000 claims 2
- 239000000463 material Substances 0.000 abstract description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 16
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 230000002401 inhibitory effect Effects 0.000 description 6
- 239000004744 fabric Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 229920002379 silicone rubber Polymers 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000002040 relaxant effect Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910020220 Pb—Sn Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020994 Sn-Zn Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 229910009069 Sn—Zn Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000009661 fatigue test Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4827—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006217207A JP4965187B2 (ja) | 2006-08-09 | 2006-08-09 | 半導体装置 |
JP2006-217207 | 2006-08-09 | ||
JP2006217207 | 2006-08-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101123232A CN101123232A (zh) | 2008-02-13 |
CN101123232B true CN101123232B (zh) | 2010-12-29 |
Family
ID=39049918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101367944A Expired - Fee Related CN101123232B (zh) | 2006-08-09 | 2007-07-27 | 半导体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7692299B2 (zh) |
JP (1) | JP4965187B2 (zh) |
CN (1) | CN101123232B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4989513B2 (ja) | 2008-02-22 | 2012-08-01 | 株式会社エヌ・ティ・ティ・ドコモ | 無線通信システム、無線通信方法及び基地局 |
JP4961398B2 (ja) * | 2008-06-30 | 2012-06-27 | 株式会社日立製作所 | 半導体装置 |
DE102009002100A1 (de) * | 2009-04-01 | 2010-10-07 | Robert Bosch Gmbh | Elektrisches Bauelement |
CN103843132A (zh) * | 2012-02-14 | 2014-06-04 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4278990A (en) * | 1979-03-19 | 1981-07-14 | General Electric Company | Low thermal resistance, low stress semiconductor package |
JP2960563B2 (ja) * | 1991-02-28 | 1999-10-06 | 住友特殊金属株式会社 | 半導体取付け基板用複合金属積層体 |
JPH07335792A (ja) * | 1994-06-08 | 1995-12-22 | Tokuyama Corp | 半導体素子搭載用パッケージ |
JPH11307682A (ja) * | 1998-04-23 | 1999-11-05 | Hitachi Ltd | 半導体装置 |
JPH11330325A (ja) * | 1998-05-13 | 1999-11-30 | Hitachi Metals Ltd | ヒートスプレッダおよびこれを用いた半導体装置ならびにヒートスプレッダの製造方法 |
JP2002359328A (ja) * | 2001-03-29 | 2002-12-13 | Hitachi Ltd | 半導体装置 |
JP3858732B2 (ja) * | 2002-03-08 | 2006-12-20 | 株式会社日立製作所 | 半導体装置 |
JP4096776B2 (ja) * | 2003-03-25 | 2008-06-04 | 株式会社日立製作所 | 半導体装置 |
JP4275005B2 (ja) * | 2004-05-24 | 2009-06-10 | 株式会社日立製作所 | 半導体装置 |
JP4343117B2 (ja) * | 2005-01-07 | 2009-10-14 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
US8318519B2 (en) * | 2005-01-11 | 2012-11-27 | SemiLEDs Optoelectronics Co., Ltd. | Method for handling a semiconductor wafer assembly |
JP4875902B2 (ja) * | 2006-02-08 | 2012-02-15 | 株式会社日立製作所 | 半導体装置 |
JP4916745B2 (ja) * | 2006-03-28 | 2012-04-18 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2007305962A (ja) * | 2006-05-12 | 2007-11-22 | Honda Motor Co Ltd | パワー半導体モジュール |
-
2006
- 2006-08-09 JP JP2006217207A patent/JP4965187B2/ja not_active Expired - Fee Related
-
2007
- 2007-07-27 CN CN2007101367944A patent/CN101123232B/zh not_active Expired - Fee Related
- 2007-08-07 US US11/834,734 patent/US7692299B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2008042084A (ja) | 2008-02-21 |
US7692299B2 (en) | 2010-04-06 |
CN101123232A (zh) | 2008-02-13 |
JP4965187B2 (ja) | 2012-07-04 |
US20080036088A1 (en) | 2008-02-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100517676C (zh) | 半导体器件及采用它的功率变流器以及采用此功率变流器的混合动力汽车 | |
CN100533714C (zh) | 用于确定冷却体温度的装置和方法 | |
CN100555627C (zh) | 功率半导体模块 | |
CN104094387B (zh) | 电气元件和/或电子元件的连接装置 | |
CN101443910A (zh) | 功率半导体模块 | |
CN101123232B (zh) | 半导体装置 | |
US20090166851A1 (en) | Power semiconductor module | |
US4305088A (en) | Semiconductor device including means for alleviating stress caused by different coefficients of thermal expansion of the device components | |
US20130244380A1 (en) | Semiconductor device and method for manufacturing the same | |
JP2012119651A (ja) | 半導体モジュール及び電極部材 | |
US5669546A (en) | Apparatus for manufacturing semiconductor device and method of manufacturing the semiconductor device using the same | |
CN100474540C (zh) | 用于使用火焰执行管芯附着的方法和系统 | |
Jingyi et al. | FE analysis the effect of bonding wire and solder failure on the resistance and temperature of IGBT | |
US20140360750A1 (en) | Busbar | |
JP6776381B2 (ja) | 熱電マイクロ冷却器を製造する方法 | |
CN111670505A (zh) | 用于发电的热电模块及相应的制造方法 | |
JP3880274B2 (ja) | 可とう電気導体の両端部の圧着接合方法 | |
JP2012084621A (ja) | 電極端子及び半導体モジュール | |
JP2018093152A (ja) | 熱発電デバイス | |
JPH0864876A (ja) | サーモモジュール | |
CN202045433U (zh) | 一种温差发电器件中低温度焊接用夹具 | |
JP4555187B2 (ja) | パワーモジュールおよびその製造方法 | |
JP4961398B2 (ja) | 半導体装置 | |
DE10335111A1 (de) | Montageverfahren für ein Halbleiterbauteil | |
FR2268434A1 (en) | Electronic voltage regulator for motor vehicles - has a thermally and electrically conducting base supporting a similar first substrate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: HITACHI POWER SEMICONDUCTOR DEVICE, LTD. Free format text: FORMER OWNER: HITACHI,LTD. Effective date: 20140722 Free format text: FORMER OWNER: HITACHI POWER SEMICONDUCTOR DEVICE, LTD. Effective date: 20140722 |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: Hitachi, Ltd. Patentee after: Hitachi Power Semiconductor Device, Ltd. Address before: Tokyo, Japan Patentee before: Hitachi, Ltd. Patentee before: HITACHI HARAMACHI ELECTRONICS Co.,Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20140722 Address after: Japan in Ibaraki County Patentee after: Hitachi Power Semiconductor Device, Ltd. Address before: Tokyo, Japan Patentee before: Hitachi, Ltd. Patentee before: HITACHI POWER SEMICONDUCTOR DEVICE, LTD. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101229 Termination date: 20170727 |
|
CF01 | Termination of patent right due to non-payment of annual fee |