CN101121108A - 真空处理装置 - Google Patents
真空处理装置 Download PDFInfo
- Publication number
- CN101121108A CN101121108A CNA2007101108047A CN200710110804A CN101121108A CN 101121108 A CN101121108 A CN 101121108A CN A2007101108047 A CNA2007101108047 A CN A2007101108047A CN 200710110804 A CN200710110804 A CN 200710110804A CN 101121108 A CN101121108 A CN 101121108A
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- China
- Prior art keywords
- upper shell
- unit
- lower house
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009434 installation Methods 0.000 claims description 86
- 238000009489 vacuum treatment Methods 0.000 claims description 86
- 239000000758 substrate Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 description 13
- 230000008439 repair process Effects 0.000 description 13
- 230000008569 process Effects 0.000 description 11
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000012423 maintenance Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 210000001138 tear Anatomy 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67706—Mechanical details, e.g. roller, belt
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (27)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060051338A KR100790797B1 (ko) | 2006-06-08 | 2006-06-08 | 진공처리장치 |
KR1020060051338 | 2006-06-08 | ||
KR1020070021650 | 2007-03-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101121108A true CN101121108A (zh) | 2008-02-13 |
CN100593432C CN100593432C (zh) | 2010-03-10 |
Family
ID=39083731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200710110804A Expired - Fee Related CN100593432C (zh) | 2006-06-08 | 2007-06-08 | 真空处理装置 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR100790797B1 (zh) |
CN (1) | CN100593432C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108122809A (zh) * | 2016-11-30 | 2018-06-05 | 圆益Ips股份有限公司 | 基板处理系统 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102170150B1 (ko) * | 2014-03-04 | 2020-10-26 | 주식회사 제우스 | 분리형 기판 열처리 장치 |
KR20180060551A (ko) * | 2016-11-29 | 2018-06-07 | (주) 세츠 | 대면적 그래핀 성장 장치 |
KR101896490B1 (ko) | 2018-03-08 | 2018-09-12 | 주식회사 듀크린 | 스크랩 수거장치 |
KR102385144B1 (ko) * | 2019-11-29 | 2022-04-12 | 삼익에프에이 주식회사 | 반도체 장비용 슬라이딩 도어장치 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11101345A (ja) | 1997-09-30 | 1999-04-13 | Tokyo Electron Ltd | 真空処理装置の開閉蓋ヒンジ機構 |
JP3527450B2 (ja) * | 1999-12-22 | 2004-05-17 | 東京エレクトロン株式会社 | 処理装置 |
KR100358968B1 (ko) * | 2000-07-14 | 2002-10-30 | 주식회사 피케이엘 | 건식식각장치 |
JP4559700B2 (ja) | 2002-12-17 | 2010-10-13 | 東京エレクトロン株式会社 | 真空容器 |
JP2004335743A (ja) * | 2003-05-08 | 2004-11-25 | Ulvac Japan Ltd | 真空処理装置用真空チャンバー |
KR100515955B1 (ko) * | 2003-11-18 | 2005-09-23 | 주식회사 에이디피엔지니어링 | 상부 커버를 개폐할 수 있는 개폐장치가 구비된평판표시소자 제조장치의 공정챔버 |
JP4432728B2 (ja) * | 2004-10-29 | 2010-03-17 | 株式会社島津製作所 | 真空処理装置 |
-
2006
- 2006-06-08 KR KR1020060051338A patent/KR100790797B1/ko active IP Right Grant
-
2007
- 2007-06-08 CN CN200710110804A patent/CN100593432C/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108122809A (zh) * | 2016-11-30 | 2018-06-05 | 圆益Ips股份有限公司 | 基板处理系统 |
CN108122809B (zh) * | 2016-11-30 | 2021-11-26 | 圆益Ips股份有限公司 | 基板处理系统 |
Also Published As
Publication number | Publication date |
---|---|
KR100790797B1 (ko) | 2008-01-02 |
KR20070117286A (ko) | 2007-12-12 |
CN100593432C (zh) | 2010-03-10 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: YUANYI IPS CO., LTD. Free format text: FORMER NAME: IPS CO., LTD. |
|
CP03 | Change of name, title or address |
Address after: Gyeonggi Do, South Korea Patentee after: WONIK IPS Co.,Ltd. Address before: Gyeonggi Do Korea Pyeongtaek jije Dong 33 Patentee before: Wonik IPS Co.,Ltd. |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP03 | Change of name, title or address |
Address after: Gyeonggi Do Korea Pyeongtaek paint 78-40 (jije Dong strange street) Patentee after: Lap Yi Cmi Holdings Ltd. Address before: Gyeonggi Do, South Korea Patentee before: WONIK IPS Co.,Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20160801 Address after: South Korea Gyeonggi Do Ping Ze Zhenwei Zhenwei group produced 75 road surface Patentee after: WONIK IPS Co.,Ltd. Address before: Gyeonggi Do Korea Pyeongtaek paint 78-40 (jije Dong strange street) Patentee before: Lap Yi Cmi Holdings Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100310 |
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CF01 | Termination of patent right due to non-payment of annual fee |