CN100593432C - 真空处理装置 - Google Patents
真空处理装置 Download PDFInfo
- Publication number
- CN100593432C CN100593432C CN200710110804A CN200710110804A CN100593432C CN 100593432 C CN100593432 C CN 100593432C CN 200710110804 A CN200710110804 A CN 200710110804A CN 200710110804 A CN200710110804 A CN 200710110804A CN 100593432 C CN100593432 C CN 100593432C
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- 238000009434 installation Methods 0.000 claims description 86
- 238000009489 vacuum treatment Methods 0.000 claims description 86
- 239000000758 substrate Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 description 13
- 230000008439 repair process Effects 0.000 description 13
- 230000008569 process Effects 0.000 description 11
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000012423 maintenance Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
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- 238000007906 compression Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 210000001138 tear Anatomy 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67706—Mechanical details, e.g. roller, belt
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060051338 | 2006-06-08 | ||
KR1020060051338A KR100790797B1 (ko) | 2006-06-08 | 2006-06-08 | 진공처리장치 |
KR1020070021650 | 2007-03-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101121108A CN101121108A (zh) | 2008-02-13 |
CN100593432C true CN100593432C (zh) | 2010-03-10 |
Family
ID=39083731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200710110804A Active CN100593432C (zh) | 2006-06-08 | 2007-06-08 | 真空处理装置 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR100790797B1 (zh) |
CN (1) | CN100593432C (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102170150B1 (ko) * | 2014-03-04 | 2020-10-26 | 주식회사 제우스 | 분리형 기판 열처리 장치 |
KR20180060551A (ko) * | 2016-11-29 | 2018-06-07 | (주) 세츠 | 대면적 그래핀 성장 장치 |
KR102173658B1 (ko) * | 2016-11-30 | 2020-11-03 | 주식회사 원익아이피에스 | 기판처리시스템 |
KR101896490B1 (ko) | 2018-03-08 | 2018-09-12 | 주식회사 듀크린 | 스크랩 수거장치 |
KR102385144B1 (ko) * | 2019-11-29 | 2022-04-12 | 삼익에프에이 주식회사 | 반도체 장비용 슬라이딩 도어장치 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6565662B2 (en) * | 1999-12-22 | 2003-05-20 | Tokyo Electron Limited | Vacuum processing apparatus for semiconductor process |
CN1574232A (zh) * | 2003-05-08 | 2005-02-02 | 爱发科股份有限公司 | 用于真空处理装置的真空室 |
CN1767145A (zh) * | 2004-10-29 | 2006-05-03 | 株式会社岛津制作所 | 真空处理装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11101345A (ja) | 1997-09-30 | 1999-04-13 | Tokyo Electron Ltd | 真空処理装置の開閉蓋ヒンジ機構 |
KR100358968B1 (ko) * | 2000-07-14 | 2002-10-30 | 주식회사 피케이엘 | 건식식각장치 |
JP4559700B2 (ja) | 2002-12-17 | 2010-10-13 | 東京エレクトロン株式会社 | 真空容器 |
KR100515955B1 (ko) * | 2003-11-18 | 2005-09-23 | 주식회사 에이디피엔지니어링 | 상부 커버를 개폐할 수 있는 개폐장치가 구비된평판표시소자 제조장치의 공정챔버 |
-
2006
- 2006-06-08 KR KR1020060051338A patent/KR100790797B1/ko active IP Right Grant
-
2007
- 2007-06-08 CN CN200710110804A patent/CN100593432C/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6565662B2 (en) * | 1999-12-22 | 2003-05-20 | Tokyo Electron Limited | Vacuum processing apparatus for semiconductor process |
CN1574232A (zh) * | 2003-05-08 | 2005-02-02 | 爱发科股份有限公司 | 用于真空处理装置的真空室 |
CN1767145A (zh) * | 2004-10-29 | 2006-05-03 | 株式会社岛津制作所 | 真空处理装置 |
Also Published As
Publication number | Publication date |
---|---|
KR100790797B1 (ko) | 2008-01-02 |
KR20070117286A (ko) | 2007-12-12 |
CN101121108A (zh) | 2008-02-13 |
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: YUANYI IPS CO., LTD. Free format text: FORMER NAME: IPS CO., LTD. |
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CP03 | Change of name, title or address |
Address after: Gyeonggi Do, South Korea Patentee after: WONIK IPS Co.,Ltd. Address before: Gyeonggi Do Korea Pyeongtaek jije Dong 33 Patentee before: Wonik IPS Co.,Ltd. |
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C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP03 | Change of name, title or address |
Address after: Gyeonggi Do Korea Pyeongtaek paint 78-40 (jije Dong strange street) Patentee after: Lap Yi Cmi Holdings Ltd. Address before: Gyeonggi Do, South Korea Patentee before: WONIK IPS Co.,Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20160801 Address after: South Korea Gyeonggi Do Ping Ze Zhenwei Zhenwei group produced 75 road surface Patentee after: WONIK IPS Co.,Ltd. Address before: Gyeonggi Do Korea Pyeongtaek paint 78-40 (jije Dong strange street) Patentee before: Lap Yi Cmi Holdings Ltd. |