CN101119003B - IC socket and manufacturing method for the same - Google Patents
IC socket and manufacturing method for the same Download PDFInfo
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- CN101119003B CN101119003B CN2007101369475A CN200710136947A CN101119003B CN 101119003 B CN101119003 B CN 101119003B CN 2007101369475 A CN2007101369475 A CN 2007101369475A CN 200710136947 A CN200710136947 A CN 200710136947A CN 101119003 B CN101119003 B CN 101119003B
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Abstract
An aspect of the present invention inheres in an IC socket includes a plate-like socket base body which includes through hole forming portions having a plurality of contact housing holes formed so as to penetrate the plate-like socket base in a front-to-back direction, and having through holes formed around the respective contact housing holes so as to penetrate the plate-like socket base in the front-to-back direction, and a plated layer formed continuously on an inner wall of the through hole, on the front and back surfaces of the through hole forming portion, and on a surface of the contact piece.
Description
The cross reference of related application
The application based on and require the rights and interests of the priority of the No.P2006-199844 of Japanese patent application formerly of on July 21st, 2006 application and No.P2006-199847; Its full content is hereby incorporated by.
Technical field
The present invention relates to a kind of integrated circuit (IC) socket, it is used to assemble IC and for example encapsulates CPU (CPU) or large scale integrated circuit (LSI) to printed circuit.More specifically, the present invention relates to a kind of IC socket and manufacture method thereof that comprises the three-dimensional circuit that utilizes the formation of three-dimensional circuit formation technology.
Background technology
Studied for a long period of time and be used to assemble IC and encapsulate CPU (CPU) for example or large scale integrated circuit (LSI) technology to the printed circuit with socket.Being used for that CPU is assemblied in the IC socket that planar lattice array (LGA) encapsulates or ball grid array (BGA) encapsulates can be embedded in the motherboard of many personal computers and server.
For the function and the performance that improve CPU, number of pins and processing speed increase day by day.Increase along with number of pins and the processing speed of CPU has improved the IC encapsulation, makes it have bigger size and thinner spacing, and has equally also improved the IC socket, with this CPU of the number of pins of supporting to have increase.Be used to support the increase of the IC package dimension that number of pins increases to increase the height change of flexible volume and its contact bonding pad (land) and the ball of IC encapsulation.
Therefore, the IC socket also need increase corresponding to these, and need have the structure of the contact of fixing IC socket by journey (stroke).Simultaneously, supporting thinner spacing can obtain by the simplest possible structure, and the structure of wishing is the IC encapsulation is connected to printed circuit board (PCB) with short distance a structure.And for the increase of CPU speed, it is important that the contact between IC socket and the encapsulation has Low ESR.Here, wish also to realize that response helps the high allowable current of the dispersion current increase of more speed.
The main flow socket that is used for LGA encapsulation now is that the contact that has given shape in this structure is by crooked metal sheet formation mussily, so that the contact is inserted in the shell of IC socket with the spacing of the about 1mm socket corresponding to 400 to 800 pins.Yet these IC sockets are assembled by the contact is inserted in the jack housing one by one.Therefore, making the required contact time of inserting increases along with the increase of number of pins, and therefore productivity ratio reduced.
As the countermeasure of this problem, known utilization is by the structure of the column of making as the conductive elastomer of contact.Yet, having the contact resistance higher as the elastomer of contact than hard contact, it can increase when high electric current is applied on the contact, and heat produces or the danger of voltage drop.And, in utilizing elastomeric IC socket, the metal surface of the bonding pad (electrode) of the contact of making by elastomer on can erasing (scraping) IC encapsulation when the IC encapsulation attaches on the IC socket.For this reason, even, still do not wish to remove impurity and oxide-film on the bonding pad by causing the metal surface mass change and on the metal surface, engage impurity at formation oxide-film on the metal surface.And the contact resistance of IC socket can change along with the time, because this IC socket utilizes the contact of elastomeric pressure to contact with metal welding contact pin in the IC encapsulation.
Summary of the invention
One aspect of the present invention is a kind of IC socket, comprise: tabular socket element body, this element body comprises that through hole forms part, its have formation a plurality of contact accommodation holes to pass tabular socket element body in direction from upper surface towards lower surface, and has the through hole that around each contact accommodation hole, forms, to pass tabular socket element body in direction from upper surface towards lower surface; And wherein, form tabular contact chip at state towards through hole, on the sidewall sections that essential part is integrally formed in through hole formation part upper surface one side; With on the inwall of through hole, form on the upper surface of part and the lower surface and the electrodeposited coating that forms continuously on the surface of contact chip at through hole.
Another aspect of the present invention is a kind of IC socket complex, comprise a pair of IC socket, each IC socket all comprises: tabular socket element body, it comprises that through hole forms part, this through hole forms a plurality of contact accommodation holes that part has formation, to pass tabular socket element body in direction from upper surface towards lower surface, and has the through hole that around each contact accommodation hole, forms, to pass tabular socket element body in direction from upper surface towards lower surface, and wherein, form tabular contact chip at state, on the sidewall sections that essential part is integrally formed in through hole formation part upper surface one side towards through hole; With on the inwall of through hole, form on the upper surface of part and the lower surface and the electrodeposited coating that forms continuously on the surface of contact chip at through hole, wherein, lower surface by the IC socket contacts with each other and attaches this each other to the IC socket, and the electrodeposited coating that forms on the lower surface partly at through hole is welded to one another.
Another aspect of the present invention is a kind of manufacture method of IC socket, comprise the steps: by using synthetic resin, integrally form tabular socket element body, this tabular socket element body comprises that through hole forms part, it has a plurality of contact accommodation holes of formation, to pass tabular socket element body in direction from upper surface towards lower surface, and has the through hole that around each contact accommodation hole, forms, to pass tabular socket element body in direction from upper surface towards lower surface, and wherein, form tabular contact chip at state, on the sidewall sections that essential part is integrally formed in through hole formation part upper surface one side towards through hole; With form electrodeposited coating continuously forming on the upper surface of part and the lower surface and on the surface of contact chip on the inwall of through hole, at through hole.
Another aspect of the present invention is a kind of IC socket, comprise: tabular socket element body, it comprises a plurality of contact accommodation holes that form from upper surface one side that will attach IC encapsulation towards lower surface one side and is provided at each and contacts accommodation hole contact standing part on every side; Contact chip, each all has first end that is fixed to upper surface one side of a corresponding contact standing part by the contact chip towards the contact accommodation hole; And throughhole portions, each all be configured to by passing contact chip first end with contact standing part and make contact chip be transmitted to lower surface one side of socket element body.
Another aspect of the present invention is a kind of IC socket complex, comprise: a pair of IC socket, each IC socket comprises: tabular socket element body, and it comprises a plurality of contact accommodation holes that form from upper surface one side that will attach IC encapsulation towards lower surface one side and is provided at each and contacts accommodation hole contact standing part on every side; Contact chip, each all has first end that is fixed to upper surface one side of a corresponding contact standing part by the contact chip towards the contact accommodation hole; And throughhole portions, each all be configured to by passing contact chip first end with contact standing part and make contact chip be transmitted to lower surface one side of socket element body, wherein, lower surface by the IC socket contacts with each other and attaches this each other to the IC socket, and the electrodeposited coating that forms on the lower face side partly at through hole is welded to one another.
Another aspect of the present invention is a kind of manufacture method of IC socket, comprises the steps: to form a plurality of contact chips by handling metallic plate, and each all comprises the opening that is used for the through hole on contact chip first end; By being used to spray the injection die casting that contact chip is set and carries out tabular socket element body on the model of die casting, form tabular socket element body, this tabular socket element body has a plurality of contact accommodation holes that are recessed into towards lower surface one side from upper surface one side that will attach the IC encapsulation, have first end of each contact chip that is fixed to a contact accommodation hole corresponding contact standing part on every side, and have and be used for the through hole of each open communication of through hole; The socket element body is set to expose through hole and part contact chip on model; And on the exposed portions serve of through hole and contact chip, form electrodeposited coating.
Description of drawings
Fig. 1 is the plane graph that illustrates according to the IC socket major part of first embodiment of the invention.
Fig. 2 is the sectional view along the A-A line of Fig. 1.
Fig. 3 is the sectional view that the IC encapsulation is attached to the major part of IC socket state before that is illustrated in according to first embodiment.
Fig. 4 be illustrated in according to first embodiment IC encapsulation is attached to the IC socket time the sectional view of major part of state.
Fig. 5 is the sectional view that the IC encapsulation is attached to the major part of IC socket state afterwards that is illustrated in according to first embodiment.
Fig. 6 A to 6C illustrates the sectional view that is used for the major part of the technology of formation soldered ball on the dorsal part bonding pad of IC socket.
Fig. 7 is the sectional view that the major part of IC socket complex is shown, and this IC socket complex is will be attached to the bonding pad place on the dorsal part each other according to a pair of IC socket of first embodiment and carry out the reflow treatment manufacturing by soldering paste.
Fig. 8 A to 8C is the sectional view that illustrates according to the manufacturing process of the IC socket of first embodiment.
Fig. 9 A and 9B are the sectional views that illustrates according to the manufacturing process of the IC socket of first embodiment.
Figure 10 is the plane graph according to the major part of the IC socket of second embodiment.
Figure 11 is the sectional view along the B-B line of Figure 10.
Figure 12 is the plane graph according to the major part of the IC socket of third embodiment of the invention.
Figure 13 is the sectional view along the A-A line of Figure 12.
Figure 14 is the sectional view that the IC encapsulation is attached to the major part of IC socket state before that is illustrated in according to the 3rd embodiment.
Figure 15 be illustrated in according to the 3rd embodiment IC encapsulation is attached to the IC socket time the sectional view of major part of state.
Figure 16 is the sectional view that the IC encapsulation is attached to the major part of IC socket state afterwards that is illustrated in according to the 3rd embodiment.
Figure 17 A to 17C is the sectional view that is used for the major part of the technology of formation soldered ball on the dorsal part bonding pad of IC socket that illustrates according to the 3rd embodiment.
Figure 18 A illustrates by soldering paste to be attached to the sectional view of the major part at the bonding pad place on the dorsal part according to a pair of IC socket of the 3rd embodiment each other, and Figure 18 B is the sectional view that illustrates by the major part of carrying out the IC socket complex that reflow treatment makes.
Figure 19 A to 19C is the figure that illustrates according to the manufacturing process of the IC socket of the 3rd embodiment, its example constitute the metallic plate of contact chip and contact chip and main moulded product by the formed metal plate preparation.
Figure 20 A to 20C is the figure that illustrates according to the manufacturing process of the IC socket of the 3rd embodiment, its respectively example form catalyst layer state, etching catalyst layer state and form the state of electrodeposited coating.
Figure 21 is the plane graph of major part that the state before the chute of cutting IC socket of a third embodiment in accordance with the invention is shown.
Figure 22 is the flow chart that illustrates according to the manufacture method of the IC socket of the 3rd embodiment.
Figure 23 is the plane graph according to the major part of the IC socket of fourth embodiment of the invention.
Figure 24 A is the sectional view along the B-B line of Figure 23, and Figure 24 B is the sectional view along the C-C line of Figure 23.
Figure 25 A is the sectional view along the D-D line of Figure 23, and Figure 25 B is the sectional view along the E-E line of Figure 23.
Figure 26 is the plane graph according to the major part of the IC socket of fifth embodiment of the invention.
Figure 27 A is the sectional view along the F-F line of Figure 26, and Figure 27 B is the sectional view along the G-G line of Figure 26, and Figure 27 C is the sectional view along the H-H line of Figure 26.
Figure 28 A is the sectional view along the I-I line of Figure 26, and Figure 28 B is the sectional view along the J-J line of Figure 26, and Figure 28 C is the sectional view along the K-K line of Figure 26.
Figure 29 is the plane graph according to the major part of the IC socket of sixth embodiment of the invention.
Figure 30 is the sectional view along the L-L line of Figure 29.
Figure 31 is the plane graph according to the major part of the IC socket of seventh embodiment of the invention.
Figure 32 is the sectional view along the M-M line of Figure 31.
Embodiment
Each embodiment of the present invention will be described with reference to the drawings.Be noted that same or analogous Reference numeral is applied to same or similar part and element in whole figure, and will omit or simplify the explanation of same or similar parts and element.
In the following description, for example concrete signal value of many details etc. has been proposed so that complete understanding of the present invention to be provided.Yet, it will be apparent to one skilled in the art that and can implement the present invention and do not need this detail.
Now, below will be based on the manufacture method of the description of the embodiment shown in the accompanying drawing according to IC socket of the present invention, IC socket complex and IC socket.
(first embodiment)
Fig. 1 and Fig. 2 show the IC socket of this embodiment.Here, Fig. 1 is the plane graph of the major part of IC socket, and Fig. 2 is the sectional view along the A-A line of Fig. 1.
The IC socket 1 of this embodiment mainly is made up of socket element body 10 that utilizes the integrally formed basic plate-like shape of synthetic resin and the electrodeposited coating 20 that is provided at the desired location on this socket element body 10.
On socket element body 10, form as a plurality of through holes 11 that contact accommodation hole (contacthousing hole) with predetermined layout.In this embodiment, make each through hole 11 of flat shape form rectangle.
Simultaneously, near a periphery on the longitudinal direction of each through hole 11 on the socket element body 10, form towards the outstanding column through hole of IC encapsulation of example not and form part 12.As depicted in figs. 1 and 2, this through hole formation part 12 forms column along the longitudinal direction of through hole 11 between through hole 11.Form part 12 places at this through hole and be formed on the through hole 13 that direction from upper surface towards lower surface is passed socket element body 10.
And, form at cantilever-shaped this through hole on the upper side wall of part 12 and form tabular contact chip 14, with the opening of the upper surface side that arrives through hole 11.Particularly, forming contact chip 14 partly stretches out towards another outer peripheral end parallel with the plate surface with a periphery from the longitudinal direction of through hole 11.This contact chip 14 is set to preset thickness, so that the direction from upper surface towards lower surface of the size conforms socket element body 10 on the direction of this plate shape from upper surface towards lower surface.At the whole hemisphere contact projection 14A of portion that forms of the centre of surface of this contact chip 14 free ends one side.
Form at through hole on the upper surface side of the medial surface of upper and lower surface, through hole 13 of part 12 and contact chip 14 and form catalyst layer 21.And, on the surface of this catalyst layer 21, form electrodeposited coating 20.
In the IC of this embodiment socket 1, form all contact chips 14 owing to can cast piece ground, so can solve the problem of the prolongation manufacturing time that causes by the number of pins increase of IC socket 1 by resin mold.
In this embodiment, contact chip 14 can be set up Metal Contact with the bonding pad that IC encapsulates on the side.Therefore, can set up little contact resistance and elimination in the voltage drop of contact position and the problem of generation heat.And, owing to there is the sheet metal abrasive function of wiping mutually, even by causing the metal surface mass change and on the metal surface, engage impurity, so still can remove impurity and the oxide-film on the metal surface and realize new Metal Contact thus at formation oxide-film on the metal surface.
(attaching of IC encapsulation)
Next, will attach to the situation of IC socket 1 with reference to the IC encapsulation 30 that figure 3 to Fig. 5 describes this embodiment.
Fig. 3 shows the just in time state before attaching the IC encapsulation 30 of aiming at IC socket 1.This IC encapsulation 30 is that LGA encapsulation and a plurality of bonding pad 31 are arranged on the lower surface.The 14A of contact projection portion, its each all be provided on the extension of second end of the contact chip 14 of IC socket 1 one sides, similarly arrange with the layout of the bonding pad 31 of IC encapsulation 30.As shown in Figure 3, the position that at first abuts against the bonding pad 31 on the 14A of contact projection portion is the position with the indication of the dotted line L1 among the figure.
Fig. 4 shows the bonding pad 31 of IC encapsulation 30 and allows that the 14A of contact projection portion that abuts against IC socket 1 goes up and be squeezed in then state herein.In this case, as shown in Figure 4, the 14A of contact protrusion portion in the position of representing with the dotted line L2 among the figure in abutting connection with bonding pad 31.Therefore, the position of dotted line L2 is shifted in the contact between lip-deep electrodeposited coating 20 of the 14A of contact projection portion and the bonding pad 31 from the position of dotted line L1, and this causes electrodeposited coating 20 and bonding pad 31 to abrade mutually.
The bonding pad 31 that Fig. 5 shows IC encapsulation 30 is further pressed to the state of the 14A of contact projection portion of IC socket 1.In this case, as shown in Figure 5, the 14A of contact projection portion in the drawings the position of with dashed lines L3 indication in abutting connection with bonding pad 31.Therefore, remove apart from d from initial abutment points in the electrodeposited coating 20 on the 14A of contact projection portion and the abutment points between the bonding pad 31 and cause scratch simultaneously.At last, can keep IC encapsulation 30 to separate avoiding by the stick locking mechanism of example (retention lockmechanism) not.
Because the contact point displacement causes scratch, so the impurity on the existence removal contact point and the wiping action of oxide-film.Therefore, electrodeposited coating 20 can be guaranteed to have being connected of little contact resistance with bonding pad 31.
Contact point between electrodeposited coating 20 and the bonding pad 31 can be guaranteed to contact simultaneously to remove the hemisphere that contact point helps the 14A of contact projection portion when contact chip 14 is bent downwardly.Even when the 14A of this contact projection portion tilted, the hemisphere curved surface was also always in abutting connection with bonding pad 31.
(assembling IC socket)
Assemble the method for the IC socket 1 of this embodiment and can use soldered ball.Now, will the method that form soldered ball be described with reference to figure 6A to 6C below.
When IC socket 1 being assemblied in for example the motherboard of personal computer (main printed circuit board) when going up, can use this assembly method.Shown in Fig. 6 A and 6B, silk screen printing soldering paste 40 on the bonding pad 20A of the lower surface on the through hole 13 that is formed at IC socket 1.
Next, shown in Fig. 6 C, according to reflow method etc. can by heating will printing soldering paste 40 become soldered ball 41.
When assembling during other parts, can be by aiming at IC socket 1 and IC socket 1 be placed on the motherboard, and weld the IC socket 1 that will make thus synchronously by reflow treatment and be assemblied on the motherboard.
(IC socket complex)
Be used under the situation of socket of server that needs keep easily the IC socket, using IC socket complex 1A as shown in Figure 7 is easily.
As shown in Figure 7, in the manufacture method of this IC socket complex 1A, prepare a pair of IC socket 1 so that make through hole form bonding pad 20A vertical symmetry on part 12 lower surfaces.On the bonding pad 20A on the IC socket 1, print the not soldering paste of example.Then, as shown in Figure 7, locate this to IC socket 1 in case the bonding pad 20A on two sockets corresponding to another and soldered ball is bonded together.At this moment, soldering paste is inserted between the bonding pad 20A of mutual correspondence.
Next, keep this state to finish IC socket complex 1A simultaneously by heating the bonding pad 20A that reflow treatment for example is welded to one another on the vertical a pair of IC socket 1.
This IC socket complex 1A has the contact on upper surface and lower surface.Therefore, can be implemented in socket alternative on upper surface and the lower surface.
(manufacture method of IC socket)
Next, will method that make the IC socket 1 of this embodiment by interconnect devices (MID) technology of utilizing die casting be described.
At first, mainly spray die casting process and be used to form socket element body 10, shown in Fig. 8 A.Surface treatment is carried out on the surface of the socket element body 10 that forms thus by etching.
Next, except the zone of being electroplated, carry out the secondary injection die casting process.Shown in Fig. 8 B, the model 50 that is used for this secondary injection die casting process is the simple masks that are used to form circuit.Then, shown in Fig. 8 C, catalyst layer 21 attaches to the part that the model 50 that is used for the secondary injection die casting process is exposed.
Then, after removing the model 50 that is used for the secondary injection die casting process, carry out electroplating technology, shown in Fig. 9 A.In this mode, can form three-dimensional circuit, shown in Fig. 9 B with electrodeposited coating 20.In this electroplating technology, on catalyst layer 21, form electrodeposited coating 20.Here, can carry out electroless-plating or metallide as electroplating technology.
Simultaneously, shown in Fig. 6 A to 6C, can also form at through hole and form soldered ball 41 on the bonding pad 20A of the electrodeposited coating 20 on part 12 lower surfaces, and stick locking mechanism parts are provided then.
Here, will the example of the concrete specification of IC socket 1 be described.
More than the circuit width 0.2mm
Circuit is at interval more than the 0.2mm
More than the plate thickness 0.3mm of contact chip
The diameter phi 0.2mm of through hole
Cu:4 to the 10 μ m of basic unit that is used to electroplate
Intermediate layer Ni:6 to the 20 μ m that is used to electroplate
Top layer Au:0.1 to the 0.3 μ m that is used to electroplate
Resin LCP, SPS, PA, PPA, PPS, PC-ABS, the PEI of coating
Although the specification of above example shows the situation of basic unit (Cu), intermediate layer (Ni) and top layer (Au) that electroplating technology is provided, can also omit the intermediate layer and Direct Electroplating Au layer on the Cu layer according to the specification environment.
And although the resin that can be coated with according to required characteristic selection, when electrical characteristics were important, liquid crystal polymer (LCP) was because its low-k is effective material.When utilizing LCP, easier enhancing thermal endurance and realization have the product of enough anti-backflows.In addition, also there is high-intensity advantage.On the contrary, also there are some shortcomings that comprise anisotropic mechanical strength and low weld strength.Yet the engineering plastics technology has obvious improvement in recent years, and has studied in succession and be called super engineering plastics and be used for realizing the new material of opposite feature formerly.Because the MID technology can be applicable to the suitable material that sprays the wide region of die casting, so will have the more resin of the appointment purpose of more options in the future.By using the MID technology, the IC socket 1 of this embodiment has than the remarkable high productivity ratio of the IC socket of routine, and can support the increase of number of pins, thinner spacing, bigger electric current and the speed of Geng Gao.
Particularly, because a plurality of contact accommodation holes that are formed on the socket element body 10 are through holes 11, so this structure of models is simple when with resin die casting socket element body 10.Therefore, have and to carry out die casting and advantage cheaply easily.
(second embodiment)
Figure 10 and Figure 11 show the IC socket 2 according to second embodiment of the invention.Figure 10 is the plane graph of the major part of IC socket, and Figure 11 is the sectional view of the line B-B in Figure 10.
The IC socket 2 that disposes this embodiment is added to IC socket 1 according to first embodiment with the elastomer 60 that will describe subsequently.The further feature of IC socket 2 is similar to first embodiment's.Therefore, about IC socket 2, specify by identical Reference numeral with assembly identical among first embodiment and will omit detailed explanation here.
As shown in Figure 10 and Figure 11, the elastomer 60 of material that representative has elasticity (elastic energy) is arranged in the through hole 11 of IC socket 2 of this embodiment, and it is used to regulate the contact pressure of contact chip 14 and reducing of the contact pressure that is used to suppress relevant with the distortion of contact chip 14.Here, the material with elastic energy can be the material of fluoroelastomer for example, and it has good thermal endurance, chemical resistance and creep resistance.If this material has enough thermal endurances to tolerate 230 ℃ of higher temperature, then this material can tolerate reflow treatment.
The IC socket 2 of this embodiment can also apply operation and the effect similar to above-mentioned first embodiment.And the manufacture method of the IC socket 2 of this embodiment is similar to the manufacture method of the IC socket 1 of above-mentioned first embodiment.Here, form socket element body (jack housing) afterwards, be introduced in the through hole 11 inner technologies that form elastomer 60.
(the 3rd embodiment)
Figure 12 and Figure 13 show the IC socket according to the 3rd embodiment.Here, Figure 12 is the plane graph according to the major part of the IC socket of the 3rd embodiment, and Figure 13 is the sectional view along the A-A line of Figure 12.
The IC socket 101 of this embodiment main by a plurality of contact chips 110, the socket element body 120 and the throughhole portions 130 that are used for being provided with predetermined structure these contact chips 110 form.
Each contact chip 110 all forms by the metallic plate that shaping has conductivity and elasticity (elastic energy), and this metallic plate for example for example make by copper alloy by beryllium copper or phosphor bronze, stainless steel alloy.This contact chip 110 forms rectangular-shaped, and is formed on its first end and the opening 111 that later on through hole of describing 131 is communicated with.
As shown in figure 13, on second end of contact chip 110, form the contact projection portion 112 of protruding towards the IC encapsulation (not shown) that will be attached.This contact projection portion 112 is included in the resin lug boss 113 that forms semi-spherical shape on the upper surface of contact chip 110 and in order to seal the electrodeposited coating 114 that this resin lug boss 113 forms.
On socket element body 120, form as the through hole 121 that contacts accommodation hole with predetermined layout.At this embodiment, each plane through hole 121 is formed rectangle.And formation is towards the outstanding column contact standing part 122 of IC encapsulation of example not near a periphery of each through hole 121 on the socket element body 120.As Figure 12 and shown in Figure 13, this contact standing part 122 forms column along the longitudinal direction of through hole 121 between through hole 121.Be formed on direction at these through hole standing part 122 places and pass the through hole 131 of socket element body 120 from upper surface towards lower surface.And first end of contact chip 110 is fixed to the top of this contact standing part 122 so that be communicated with opening 111 on this contact chip 110 at the through hole 131 at contact standing part 122 places.
As previously mentioned, first end of contact chip 110 is fixed to this contact standing part 122, rather than the part of this end arrives through hole 121.
According to the IC socket 101 of this embodiment, contact chip 110 can be set up the hard contact that contacts with bonding pad in the IC encapsulation.Therefore, can set up little contact resistance.
(attaching of IC encapsulation)
Next, will be referring to figs. 14 to 16 the situation that IC encapsulation 140 is attached to IC socket 101 of describing this embodiment.
Figure 14 shows the just in time state before attaching the IC encapsulation 140 of aiming at IC socket 101.This IC encapsulation 140 is that LGA encapsulation and a plurality of bonding pad 141 are arranged on the lower surface.Contact projection portion 112, its each all be provided on the ledge of second end of the contact chip 110 on IC socket 101 1 sides, similarly arrange with the layout of the bonding pad 141 of IC encapsulation 140.As shown in figure 14, at first the position on the bonding pad 141 of contact projection portion 112 is the position of representing with the dotted line L1 among the figure.
The bonding pad 141 that Figure 15 shows IC encapsulation 140 is allowed the contact projection portion 112 in abutting connection with IC socket 101, and is squeezed in state herein then.In this case, as shown in figure 15, contact projection portion 112 in the position of representing with the dotted line L2 among the figure in abutting connection with bonding pad 141.Therefore, the lip-deep electrodeposited coating 114 of contact projection portion 112 and the contact between the bonding pad 141 position from the displacement of dotted line L1 to dotted line L2 causes scratch simultaneously.
Figure 16 shows the state of the bonding pad 141 further extruding of IC encapsulation 140 to the contact projection portion 112 of IC socket 101.In this case, as shown in figure 16, contact projection portion 112 in the position of representing with the dotted line L3 among the figure in abutting connection with bonding pad 141.Therefore, the abutment points between electrodeposited coating in the contact projection portion 112 114 and bonding pad 141 causes scratch simultaneously from initial abutment points translocation distance d.Finally, can keep IC encapsulation 140 to separate avoiding by the stick locking mechanism of example not.
When the contact point displacement causes abrading simultaneously, the impurity on the existence removal contact point and the wiping action of oxide-film.Therefore, electrodeposited coating 114 can be guaranteed to have being connected of little contact resistance with bonding pad 141.
(assembling IC socket)
Assemble the method for the IC socket 101 of this embodiment and can use soldered ball.Now, will the method that form soldered ball be described referring to figs. 17A through 17C below.
When for example when the motherboard (main printed circuit board) of personal computer is gone up assembling IC socket 101, using this assembly method.Shown in Figure 17 A and 17B, silk screen printing soldering paste 150 on the bonding pad 132A of the lower surface on the throughhole portions 130 that is formed at IC socket 101.
Next, shown in Figure 17 C, can will print soldering paste 150 by heating according to reflow method etc. and change over soldered ball 151.
When assembling during other parts, can be by aiming at IC socket 1 and IC socket 1 be placed on the motherboard, and weld the IC socket 1 that will make thus by reflow treatment simultaneously and be assemblied on the motherboard.
(IC socket complex)
Under the situation of the socket of the server that is used for keeping easily the IC socket, using the IC socket complex 101A shown in Figure 18 B is easily.
Shown in Figure 18 A, in the manufacture method of this IC socket complex 101A, prepare a pair of IC socket 101 so that make bonding pad 132A vertical symmetry on throughhole portions 130 lower surfaces.Shown in Figure 18 A, printing soldering paste 150 on the bonding pad 132A on the IC socket 101.Then, shown in Figure 18 A, locate this to IC socket 101 in case the bonding pad 132A on two sockets corresponding to another and then socket be bonded together.At this moment, shown in Figure 18 A, soldering paste 150 is inserted between the bonding pad 132A of mutual correspondence.
Next, be welded to one another bonding pad 132A on the vertical a pair of IC socket 101, keep this state to finish IC socket complex 101A simultaneously by heating reflow treatment for example.
This IC socket complex 101A has the contact on upper surface and lower surface.Therefore, can be implemented in socket alternative on upper surface and the lower surface.
(manufacture method of IC socket)
Next, will method that make the IC socket 101 of this embodiment by interconnect devices (MID) technology of utilizing die casting be described.
At first, shown in Figure 19 A, prepare metallic plate 110A and pass through for example contact chip 110 shown in Figure 19 B according to etching or extrusion process shaping formation.This contact chip 110 is formed as shown in figure 12 rectangular-shaped, and on the one side, form opening 111.
The contact chip that contacts equal number 110 that the IC socket preparing and will make 101 is required.For the ease of later technology, these contact chips 110 that are shaped to be satisfying the contact of requirement, and by using the chute of describing subsequently 116, integrally provide with the form corresponding to contact chip 110 final structures of IC socket 101.When needs, can also be divided into two or more parts with contact chip that handled with integral body.Yet in order to be easy to handle whole technology, preferred process is all contact chips 110 of piece as a whole.Figure 21 is the plane graph of the IC socket 101 in the manufacturing process, and it shows the state by chute 116 integral body and contact chip 110 connected to one another.As shown in the figure, when contact chip 110 is electrically connected to each other by chute 116, can use metallide at electroplating technology.
Next, whole contact chip 110 and mainly spray die casting process is set on model.As a result, first end of each contact chip 110 is inserted (engaging in this embodiment), and on the surface of second end of contact chip 110, form resin lug boss 113 to the socket element body 120 shown in Figure 19 C.In this mode, the preparation semi-finished product.
By state etching as Figure 19 C shown in carry out surface treatment thereafter.
Next, in the zone except the zone of being electroplated, carry out the secondary injection die casting process.The model that is used for this secondary injection die casting process is the simple mask that is used to form circuit.In Figure 20 A, omitted the diagram that is used for the secondary injection die casting.Then, shown in Figure 20 A, catalyst layer 115 attached to be used for the not model institute exposed portions of example of secondary injection die casting process.
Subsequently, shown in Figure 20 B, the centering on the part and on the resin lug boss 113 of opening 111 that catalyst layer 115 is etched with at contact chip 110 stays catalyst layer 115.
, by removal be used for the model of secondary injection die casting and carry out electrolytic plating process, can form the three-dimensional circuit shown in Figure 20 C thereafter.In this electroplating technology, forming formation electrodeposited coating 132 on electrodeposited coating 114 and catalyst layer 115 surfaces on contact projection portion 112 surfaces simultaneously in through hole 131 inside.Although use metallide in this embodiment, instead can carry out electroless-plating.
By suitably cut chute 116 finish the manufacturing of the IC socket 101 of this embodiment thereafter.Simultaneously, shown in Figure 17 A to 17C, can also on the bonding pad 132A of the electrodeposited coating 132 on throughhole portions 130 lower surfaces, form soldered ball 151 and stick locking mechanism parts are provided then.
Here, will the example of the concrete specification of IC socket 101 be described.
More than the circuit width 0.2mm
Circuit is at interval more than the 0.2mm
More than the plate thickness 0.3mm of contact chip
The diameter phi 0.2mm of through hole
Cu:4 to the 10 μ m of basic unit that is used to electroplate
Intermediate layer Ni:6 to the 20 μ m that is used to electroplate
Top layer Au:0.1 to the 0.3 μ m that is used to electroplate
Resin LCP, SPS, PA, PPA, PPS, PC-ABS, the PEI of coating
Although the specification of above-mentioned example shows basic unit (Cu), intermediate layer (Ni) and top layer (Au) are provided in electroplating technology, can also omit the intermediate layer according to the environment of specification and directly on the Cu layer, electroplate the Au layer.
And although the resin that can be coated with according to required characteristic selection, liquid crystal polymer when electrical characteristics are important (LCP) is because its low-k is effective material.When utilizing LCP, easier enhancing thermal endurance and realization have the product of enough anti-backflows.In addition, also there is high-intensity advantage.On the contrary, also there are some shortcomings that comprise anisotropic mechanical strength and low weld strength.Yet the engineering plastics technology has obvious improvement in recent years, and studied in succession be called super engineering plastics and be used for being implemented in before the new material of opposite feature.Because the MID technology can be applicable to the suitable material that sprays the wide region of die casting, so will have the more resin of the appointment purpose of more options in the future.
By using the MID technology, the IC socket 101 of this embodiment has than the remarkable high productivity ratio of the IC socket of routine, and can support the increase of number of pins, thinner spacing, bigger electric current and the speed of Geng Gao.
(the 4th embodiment)
Figure 23 to Figure 25 B shows the IC socket 102 according to fourth embodiment of the invention.Figure 23 is the plane graph of the major part of IC socket 102, Figure 24 A is the sectional view of the B-B line in Figure 23, Figure 24 B is the sectional view of the C-C line in Figure 23, and Figure 25 A is the sectional view of the D-D line in Figure 23, and Figure 25 B is the sectional view of the E-E line in Figure 23.Here, about the IC socket 102 of the 4th embodiment, the assembly similar to the 3rd embodiment will be represented with same or analogous Reference numeral, and will omit detailed description here.
In the IC of present embodiment socket 102, the height setting of contact standing part 122 is to equal the thickness of resin part on every side.Particularly, socket element body 120 has simple structure, and it is not outstanding to face side wherein to contact standing part 122.On the contrary, be used on the resin of base portion of contact chip 110 the through hole 121A that forms as rectangle contact accommodation hole with predetermined at composition simple in structurely, and on the contact standing part 122 of through hole 121A periphery, form through hole 131.For this reason, only carry on the back a lip-deep model, only can realize being arranged in model on the upper surface side by the recessed portion that is provided for forming resin lug boss 113A by providing simple convex shape just can realize being arranged in to be used for mainly spraying die casting.
As mentioned above, by the thickness of resin part around adjusting, can set the height of the contact standing part 122 that is used for fixing contact chip 110.Thereby, have greater flexibility for contact chip 110 by journey design.Therefore can imagine:, or, can reduce the length of contact chip 110 according to the warpage tolerance of IC socket according to the specification of the number of pins that comprises contactinterval or needs.
In addition, in the IC of present embodiment socket 102, the width setup that is positioned near the through hole 121A the contact chip 110 is for substantially greater than the width of contact chip 110.
In addition, in the IC of present embodiment socket 102, be provided at resin projection 113A on second end of contact chip 110 and be designed to semi-cylindrical form (dome shape) substantially and replace semi-spherical shape.
The IC socket 102 of present embodiment also can use and above-mentioned the 3rd embodiment similar operation and implementation method.In addition, the manufacture method of the IC socket 102 of present embodiment is similar to the manufacture method of the IC socket 101 of above-mentioned the 3rd embodiment.
(the 5th embodiment)
Figure 26 to Figure 28 C shows the IC socket 103 according to fifth embodiment of the invention.Figure 26 is the plane graph of the major part of IC socket 103, Figure 27 A is the sectional view of the F-F line in Figure 26, Figure 27 B is the sectional view of the G-G line in Figure 26, Figure 27 C is the sectional view of the H-H line in Figure 26, Figure 28 A is the sectional view of the I-I line in Figure 26, Figure 28 B is the sectional view of the J-J line in Figure 26, and Figure 28 C is the sectional view of the K-K line in Figure 26.Here, IC socket 103 about the 5th embodiment, will with same or analogous Reference numeral represent to according to the assembly in the IC socket 101 of the 3rd embodiment or according to the similar component of assembly in the IC socket 102 of above-mentioned the 4th embodiment, and will omit detailed description here.
In the IC of this embodiment socket 103, similar to the IC socket 102 according to above-mentioned the 4th embodiment, the height setting of contact standing part 122 is the thickness of the resin part around equaling.Particularly, socket element body 120 has simple structure, it is not outstanding to face side wherein to contact standing part 122, and, be used on the resin of base portion of contact chip 110A the through hole 121B that forms as rectangle contact accommodation hole with predetermined at composition simple in structurely, and form through hole 131 on the contact standing part 122 in the periphery of through hole 121B.For this reason, only by providing simple convex shape just can realize being arranged in to be used for mainly spraying the lip-deep model of the back of the body of die casting, only can realize being arranged in model on the upper surface side by the recessed portion that is provided for forming resin lug boss 113A.
For this reason, in the IC of present embodiment socket 103, near the through hole 121B that is positioned at the contact chip 110A is positioned at suitable position, makes crooked and arranges contact chip 110A obliquely, to guarantee longer sheet spring length.
In addition, in the IC of present embodiment socket 103, the resin lug boss 113A that is provided on second end of contact chip 110A also is designed to semi-cylindrical form (dome shape) substantially, replaces hemispherical.
The IC socket 103 of present embodiment also can use and above-mentioned third and fourth embodiment similar operation and the implementation method.In addition, the manufacture method of the IC socket 103 of present embodiment is similar to the manufacture method of the IC socket 101 of above-mentioned the 3rd embodiment.
(the 6th embodiment)
Figure 29 and Figure 30 show the IC socket 104 according to sixth embodiment of the invention.
Too, the height setting of contact standing part 122 equals the thickness of resin part on every side in the IC of present embodiment socket 104.Particularly, socket element body 120 has simple structure, it is not outstanding to face side wherein to contact standing part 122, be used on the resin of base portion of contact chip 110 through hole 121 that forms as rectangle contact accommodation hole with predetermined at composition simple in structurely, and form through hole on the contact standing part 122 in the periphery of through hole 121.For this reason, only by providing simple convex shape just can realize being arranged in to be used for mainly spraying the lip-deep model of the back of the body of die casting, only can realize being arranged in model on the upper surface side by the recessed portion that is provided for forming resin lug boss 113.
As mentioned above, by the thickness of resin part around adjusting, can set the height of the contact standing part 122 that is used for fixing contact chip 110.Thereby, contact chip 110 had greater flexibility by journey design.Therefore can imagine:, can reduce the length of contact chip 110 according to the specification of the contactinterval of the pin that comprises needs or number or according to the crooked tolerance of IC socket.
In addition, in the present embodiment, in order to regulate the contact pressure of contact chip 110, perhaps in order to suppress reducing of the contact pressure relevant, at the internal placement rubber-like elastomer of through hole 121 with the distortion of contact chip 110.
The IC socket 104 of present embodiment also can use operation and the implementation method similar to above-mentioned the 3rd embodiment.In addition, the manufacture method of the IC socket 104 of present embodiment is similar to the manufacture method of the IC socket 101 of above-mentioned the 3rd embodiment.Yet, after this manufacture method the has been included in die casting socket element body (socket cavity) 20 at the through hole 121 inner additional steps that form elastomers 160, as shown in figure 30.
(the 7th embodiment)
Figure 31 and 32 shows the IC socket 105 according to seventh embodiment of the invention.Figure 31 is the plane graph of the major part of IC socket 105, and Figure 32 is the sectional view of the M-M line in Figure 31.
As shown in Figure 32, the IC socket 105 of present embodiment has following structure, and wherein when contact chip 110 was inserted contact standing parts 122, resin bed 122A also was formed on the contact chip 110, makes contact chip 110 be clipped in the middle by resin.For this reason, stably keep contact chip 110, improve durability when being applied to contact chip 110 with convenient load by contact standing part 122.
Similar among the further feature of present embodiment and above-mentioned each embodiment.Thereby represent with identical Reference numeral in the drawings, and will omit detailed description here.
(other embodiment)
Be appreciated that constitute embodiment openly the above description and the accompanying drawing of part do not limit the scope of the invention, and it will be apparent to one skilled in the art that from instruction of the present disclosure, various other embodiment, example and technology are used and become apparent.
For example, each above-mentioned embodiment discloses the example that forms catalyst layer below electrodeposited coating.Instead, under the situation that catalyst layer is not provided, can form electrodeposited coating by all modes.
In addition, each above-mentioned embodiment provides as the through hole 121,121A and the 121B that contact accommodation hole.Instead, can also form groove with lower surface.
In addition, construct above-mentioned each embodiment,, and on the surface of resin lug boss 113 or 113A, form electrodeposited coating with formation resin lug boss 113 or 113A on second end of contact chip 110.Instead, can form lug boss by all modes, it protrudes to the surface on second end of the contact chip of being made by metallic plate 110 by the pressure effect.
For a person skilled in the art, under the situation that does not depart from scope of the present invention, after having accepted instruction of the present invention, can carry out different modifications.
Claims (20)
1. IC socket device comprises:
An IC socket, described IC socket comprises:
Tabular socket element body, it comprises that through hole forms part, described through hole forms part and comprises a plurality of through holes, this through hole passes described tabular socket element body, and this tabular socket element body also comprises the contact accommodation hole, this contact accommodation hole passes described tabular socket element body, and described through hole forms around each contact accommodation hole;
Towards the tabular contact chip of resin of contact accommodation hole, the tabular contact chip of this resin comprises essential part on the sidewall sections that is integrally formed in through hole formation part upper surface one side and the resin contact projection portion that forms in the protrusion mode on the close upper surface of the tabular contact chip of the free-ended resin of the tabular contact chip of described resin; And
Wherein, on the upper surface and lower surface that form part on the inwall of through hole, at through hole, forming electrodeposited coating on the upper surface of the tabular contact chip of resin and in described resin contact projection portion.
2. IC socket device as claimed in claim 1 wherein, integrally form described tabular socket element body, and described tabular socket element body is the synthetic resin with electrical insulation property.
3. IC socket device as claimed in claim 1, wherein, described resin contact projection portion is hemisphere.
4. IC socket device as claimed in claim 1 wherein, holds elastomeric components in the contact accommodation hole.
5. IC socket device as claimed in claim 4, wherein, elastomeric components comprises the material with anti-backflow.
6. IC socket device as claimed in claim 1, wherein, the electrodeposited coating that through hole forms on the lower surface partly comprises soldered ball.
7. IC socket device comprises:
A pair of IC socket, described IC socket comprises:
Tabular socket element body, it comprises that through hole forms part, described through hole forms part and comprises a plurality of through holes, this through hole passes described tabular socket element body, and this tabular socket element body also comprises the contact accommodation hole, this contact accommodation hole passes described tabular socket element body, and described through hole forms around each contact accommodation hole;
Towards the tabular contact chip of resin of contact accommodation hole, the tabular contact chip of this resin comprises essential part on the sidewall sections that is integrally formed in through hole formation part upper surface one side and the resin contact projection portion that forms in the protrusion mode on the close upper surface of the tabular contact chip of the free-ended resin of the tabular contact chip of described resin; And
Wherein, on the upper surface and lower surface that form part on the inwall of through hole, at through hole, forming electrodeposited coating on the upper surface of the tabular contact chip of resin and in described resin contact projection portion;
Wherein, in described a pair of IC socket, the bottom surface by the IC socket contacts with each other and attaches this each other to the IC socket, and
The electrodeposited coating that forms on the lower surface partly at through hole is welded to one another.
8. the manufacture method of an IC socket comprises the steps:
By using synthetic resin, integrally form tabular socket element body, this tabular socket element body comprises that through hole forms part, described through hole forms part and has a plurality of through holes, this through hole passes described tabular socket element body, described tabular socket element body also comprises the contact accommodation hole, and this contact accommodation hole passes tabular socket element body, and described through hole forms around each contact accommodation hole;
Formation is towards the tabular contact chip of the resin of through hole, the tabular contact chip of each resin comprise on the sidewall sections that is integrally formed on the upper surface that through hole forms one of part essential part and near the resin contact projection portion that forms in the protrusion mode on the upper surface of the tabular contact chip of the free-ended resin of the tabular contact chip of described resin; With
On the upper surface and lower surface that form part on the inwall of through hole, at through hole, forming electrodeposited coating continuously on the upper surface of the tabular contact chip of resin and in described resin contact projection portion.
9. IC socket comprises:
Tabular socket element body, it comprises a plurality of contact accommodation holes that form from upper surface one side that will attach IC encapsulation towards lower surface one side and is provided at each and contacts accommodation hole contact standing part on every side;
Contact chip, each all has first end, first end of described contact chip is fixed to upper surface one side of a corresponding contact standing part, and described contact chip is towards the contact accommodation hole, be formed with resin contact projection portion on the upper surface of described contact chip, in described resin contact projection portion, electrodeposited coating be set; With
Throughhole portions, each first end that all is configured to pass contact chip with contact standing part, and make contact chip can be transmitted to lower surface one side of described tabular socket element body.
10. IC socket as claimed in claim 9, wherein, the synthetic resin that has electrical insulation property by use integrally forms described tabular socket element body.
11. IC socket as claimed in claim 9, wherein, the contact accommodation hole passes described tabular socket element body in the direction from upper surface towards lower surface.
12. IC socket as claimed in claim 9 wherein, forms contact projection portion on second end of contact chip, to protrude towards the IC encapsulation that will be attached to contact chip.
13. as the IC socket of claim 12, wherein, contact projection portion comprises the resin lug boss that is provided on contact chip second end and has the surface that covers with metal level.
14. IC socket as claimed in claim 9 wherein, holds elastomeric components in the contact accommodation hole.
15. IC socket as claimed in claim 9, wherein, second end of contact chip does not contact standing part and overlaps with another, and another contact standing part is adjacent to contact standing part that contact chip was fixed to.
16. as the IC socket of claim 15, wherein, contact chip has and bends to the plane of crank form.
17. IC socket as claimed in claim 9, wherein, soldered ball is provided on the throughhole portions that is exposed to socket element body lower surface one side.
18. an IC socket complex comprises:
A pair of IC socket, each IC socket comprises:
Tabular socket element body, it comprises a plurality of contact accommodation holes that form from upper surface one side that will attach IC encapsulation towards lower surface one side and is provided at each and contacts accommodation hole contact standing part on every side;
Contact chip, each all has first end, and this first end is fixed to upper surface one side of a corresponding contact standing part, and described contact chip is towards the contact accommodation hole, be formed with resin contact projection portion on the upper surface of described contact chip, in described resin contact projection portion, electrodeposited coating be set; With
Throughhole portions, each first end that all is configured to pass contact chip with contact standing part, and make contact chip can be transmitted to lower surface one side of described tabular socket element body,
Wherein, the lower surface by the IC socket contact with each other attach each other this to the IC socket and
The electrodeposited coating that forms on the lower face side partly at through hole is welded to one another.
19. the manufacture method of an IC socket comprises the steps:
By handling metallic plate, form a plurality of contact chips, each contact chip all comprises the opening that is used for through hole that is positioned on contact chip first end;
By being used to spray the injection die casting that contact chip is set and carries out tabular socket element body on the model of die casting, form tabular socket element body, and on the upper surface of second end of described contact chip, form resin contact projection portion in protruding mode, this tabular socket element body has a plurality of contact accommodation holes from upper surface one side that will attach IC encapsulation towards lower surface one side, have and the through hole that is used for each open communication of through hole, first end of each contact chip is fixed to the corresponding contact standing part around the contact accommodation hole, and;
The socket element body is set to expose through hole on model, also exposes the part of each contact chip; And
In the exposed portions serve of through hole and contact chip and described resin contact projection portion, form electrodeposited coating.
20. as the manufacture method of the IC socket of claim 19, wherein, the contact accommodation hole passes the socket element body in the direction from upper surface towards lower surface.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006199847A JP2008027774A (en) | 2006-07-21 | 2006-07-21 | Ic socket and its manufacturing method |
| JP2006199844A JP2008027773A (en) | 2006-07-21 | 2006-07-21 | Ic socket and its manufacturing method |
| JP2006-199844 | 2006-07-21 | ||
| JP2006-199847 | 2006-07-21 | ||
| JP2006199847 | 2006-07-21 | ||
| JP2006199844 | 2006-07-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101119003A CN101119003A (en) | 2008-02-06 |
| CN101119003B true CN101119003B (en) | 2011-05-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101369475A Expired - Fee Related CN101119003B (en) | 2006-07-21 | 2007-07-23 | IC socket and manufacturing method for the same |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2008027773A (en) |
| CN (1) | CN101119003B (en) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4548451A (en) * | 1984-04-27 | 1985-10-22 | International Business Machines Corporation | Pinless connector interposer and method for making the same |
| JPH08287983A (en) * | 1995-04-14 | 1996-11-01 | Whitaker Corp:The | Elastomer connector |
| JP4085186B2 (en) * | 1997-10-17 | 2008-05-14 | モレックス インコーポレーテッド | BGA socket |
| JP2000091048A (en) * | 1998-09-16 | 2000-03-31 | Ngk Insulators Ltd | Continuity auxiliary material and manufacture thereof |
| JP2002298950A (en) * | 2001-04-02 | 2002-10-11 | Citizen Electronics Co Ltd | Electric connector |
| JP2004095326A (en) * | 2002-08-30 | 2004-03-25 | Enplas Corp | Contact unit |
| JP2007027093A (en) * | 2005-07-12 | 2007-02-01 | Alps Electric Co Ltd | Connecting member and its manufacturing method as well as connecting member mounting structure having connecting member and its manufacturing method |
-
2006
- 2006-07-21 JP JP2006199844A patent/JP2008027773A/en active Pending
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2007
- 2007-07-23 CN CN2007101369475A patent/CN101119003B/en not_active Expired - Fee Related
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| Publication number | Publication date |
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| CN101119003A (en) | 2008-02-06 |
| JP2008027773A (en) | 2008-02-07 |
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Granted publication date: 20110511 Termination date: 20120723 |