CN101114590A - 制造半导体器件的方法以及电镀装置 - Google Patents
制造半导体器件的方法以及电镀装置 Download PDFInfo
- Publication number
- CN101114590A CN101114590A CNA2007101367840A CN200710136784A CN101114590A CN 101114590 A CN101114590 A CN 101114590A CN A2007101367840 A CNA2007101367840 A CN A2007101367840A CN 200710136784 A CN200710136784 A CN 200710136784A CN 101114590 A CN101114590 A CN 101114590A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000007747 plating Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 230000008569 process Effects 0.000 claims abstract description 42
- 239000004020 conductor Substances 0.000 claims abstract description 23
- 238000009713 electroplating Methods 0.000 claims description 142
- 238000003860 storage Methods 0.000 claims description 3
- 238000012937 correction Methods 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 10
- 238000012545 processing Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 244000287680 Garcinia dulcis Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006204535A JP5000941B2 (ja) | 2006-07-27 | 2006-07-27 | 半導体装置の製造方法 |
JP2006204535 | 2006-07-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101114590A true CN101114590A (zh) | 2008-01-30 |
CN100550309C CN100550309C (zh) | 2009-10-14 |
Family
ID=38985053
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007101367840A Active CN100550309C (zh) | 2006-07-27 | 2007-07-27 | 制造半导体器件的方法以及电镀装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8038864B2 (zh) |
JP (1) | JP5000941B2 (zh) |
CN (1) | CN100550309C (zh) |
TW (1) | TWI377644B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106917122A (zh) * | 2017-03-31 | 2017-07-04 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 一种晶圆电镀装置及电镀方法 |
WO2021175193A1 (zh) * | 2020-03-06 | 2021-09-10 | 长鑫存储技术有限公司 | 半导体结构及其制作方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105696064B (zh) * | 2016-04-01 | 2018-06-22 | 广州兴森快捷电路科技有限公司 | 一种图形电镀参数的获取方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2593690B2 (ja) * | 1988-06-24 | 1997-03-26 | イビデン株式会社 | プリント配線板のめっき面積測定装置 |
JP3694594B2 (ja) * | 1998-09-03 | 2005-09-14 | 株式会社荏原製作所 | 微細孔および/または微細溝を有する基材の孔埋めめっき方法 |
EP1125007B1 (en) * | 1998-10-05 | 2010-08-11 | Semitool, Inc. | Submicron metallization using electrochemical deposition |
US6319831B1 (en) * | 1999-03-18 | 2001-11-20 | Taiwan Semiconductor Manufacturing Company | Gap filling by two-step plating |
US6140241A (en) * | 1999-03-18 | 2000-10-31 | Taiwan Semiconductor Manufacturing Company | Multi-step electrochemical copper deposition process with improved filling capability |
US7189318B2 (en) * | 1999-04-13 | 2007-03-13 | Semitool, Inc. | Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece |
JP2001123298A (ja) | 1999-10-25 | 2001-05-08 | Sumitomo Metal Ind Ltd | 電解めっき方法と多層配線基板とその作製方法 |
JP2002359210A (ja) * | 2001-05-31 | 2002-12-13 | Sharp Corp | 半導体装置の製造方法 |
JP2004193520A (ja) * | 2002-12-13 | 2004-07-08 | Sumitomo Bakelite Co Ltd | プリント配線板の製造方法 |
JP3949652B2 (ja) | 2003-02-17 | 2007-07-25 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2004315889A (ja) * | 2003-04-16 | 2004-11-11 | Ebara Corp | 半導体基板のめっき方法 |
JP2005039142A (ja) | 2003-07-18 | 2005-02-10 | Nec Electronics Corp | 半導体装置の製造方法 |
JP4307300B2 (ja) * | 2004-03-17 | 2009-08-05 | 株式会社荏原製作所 | 微細孔および/または微細溝を有する基材の孔埋めめっき方法 |
JP4335720B2 (ja) * | 2004-03-19 | 2009-09-30 | Necエレクトロニクス株式会社 | データ出力装置および半導体装置の製造方法 |
US7232513B1 (en) * | 2004-06-29 | 2007-06-19 | Novellus Systems, Inc. | Electroplating bath containing wetting agent for defect reduction |
JP2006060011A (ja) | 2004-08-20 | 2006-03-02 | Toshiba Corp | 半導体装置の製造方法 |
JP4307408B2 (ja) * | 2005-05-18 | 2009-08-05 | 株式会社荏原製作所 | 微細孔および/または微細溝を有する基材の孔埋めめっき方法 |
-
2006
- 2006-07-27 JP JP2006204535A patent/JP5000941B2/ja active Active
-
2007
- 2007-07-26 TW TW096127266A patent/TWI377644B/zh active
- 2007-07-27 US US11/829,129 patent/US8038864B2/en active Active
- 2007-07-27 CN CNB2007101367840A patent/CN100550309C/zh active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106917122A (zh) * | 2017-03-31 | 2017-07-04 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 一种晶圆电镀装置及电镀方法 |
WO2021175193A1 (zh) * | 2020-03-06 | 2021-09-10 | 长鑫存储技术有限公司 | 半导体结构及其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5000941B2 (ja) | 2012-08-15 |
TW200810021A (en) | 2008-02-16 |
JP2008031506A (ja) | 2008-02-14 |
TWI377644B (en) | 2012-11-21 |
US8038864B2 (en) | 2011-10-18 |
CN100550309C (zh) | 2009-10-14 |
US20080023335A1 (en) | 2008-01-31 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: RENESAS ELECTRONICS CO., LTD. Free format text: FORMER OWNER: NEC CORP. Effective date: 20101123 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20101123 Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
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CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: Renesas Electronics Corporation |