CN101076865A - 自旋电流可切换磁存储器元件以及制造存储器元件的方法 - Google Patents
自旋电流可切换磁存储器元件以及制造存储器元件的方法 Download PDFInfo
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- CN101076865A CN101076865A CNA2005800395560A CN200580039556A CN101076865A CN 101076865 A CN101076865 A CN 101076865A CN A2005800395560 A CNA2005800395560 A CN A2005800395560A CN 200580039556 A CN200580039556 A CN 200580039556A CN 101076865 A CN101076865 A CN 101076865A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
Claims (31)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/990,401 US7313013B2 (en) | 2004-11-18 | 2004-11-18 | Spin-current switchable magnetic memory element and method of fabricating the memory element |
US10/990,401 | 2004-11-18 | ||
PCT/US2005/028759 WO2006055062A1 (en) | 2004-11-18 | 2005-08-12 | Spin-current switchable magnetic memory element and method of fabricating the memory element |
Publications (2)
Publication Number | Publication Date |
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CN101076865A true CN101076865A (zh) | 2007-11-21 |
CN101076865B CN101076865B (zh) | 2010-05-26 |
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Application Number | Title | Priority Date | Filing Date |
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CN2005800395560A Expired - Fee Related CN101076865B (zh) | 2004-11-18 | 2005-08-12 | 自旋电流可切换磁存储器元件以及制造存储器元件的方法 |
Country Status (3)
Country | Link |
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US (4) | US7313013B2 (zh) |
CN (1) | CN101076865B (zh) |
WO (1) | WO2006055062A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2021102750A1 (zh) * | 2019-11-27 | 2021-06-03 | 华为技术有限公司 | 一种自旋逻辑器件、电路、控制方法及处理装置 |
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US9171601B2 (en) | 2009-07-08 | 2015-10-27 | Alexander Mikhailovich Shukh | Scalable magnetic memory cell with reduced write current |
US8406041B2 (en) | 2009-07-08 | 2013-03-26 | Alexander Mikhailovich Shukh | Scalable magnetic memory cell with reduced write current |
US8331141B2 (en) | 2009-08-05 | 2012-12-11 | Alexander Mikhailovich Shukh | Multibit cell of magnetic random access memory with perpendicular magnetization |
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KR101658394B1 (ko) * | 2009-12-15 | 2016-09-22 | 삼성전자 주식회사 | 자기터널접합 소자 및 그 제조방법과 자기터널접합 소자를 포함하는 전자소자 |
KR20110071710A (ko) * | 2009-12-21 | 2011-06-29 | 삼성전자주식회사 | 수직 자기터널접합과 이를 포함하는 자성소자 및 그 제조방법 |
US8283741B2 (en) * | 2010-01-08 | 2012-10-09 | International Business Machines Corporation | Optimized free layer for spin torque magnetic random access memory |
US9450177B2 (en) * | 2010-03-10 | 2016-09-20 | Tohoku University | Magnetoresistive element and magnetic memory |
US8324697B2 (en) | 2010-06-15 | 2012-12-04 | International Business Machines Corporation | Seed layer and free magnetic layer for perpendicular anisotropy in a spin-torque magnetic random access memory |
US8988934B2 (en) | 2010-07-27 | 2015-03-24 | Alexander Mikhailovich Shukh | Multibit cell of magnetic random access memory with perpendicular magnetization |
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US8790798B2 (en) | 2011-04-18 | 2014-07-29 | Alexander Mikhailovich Shukh | Magnetoresistive element and method of manufacturing the same |
US8758909B2 (en) | 2011-04-20 | 2014-06-24 | Alexander Mikhailovich Shukh | Scalable magnetoresistive element |
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WO2015152736A2 (en) | 2014-04-02 | 2015-10-08 | Granville Simon Edward | Magnetic materials and devices comprising rare earth nitrides |
KR102328525B1 (ko) | 2014-04-02 | 2021-11-19 | 프랭크 나탈리 | 도핑된 희토류 니트라이드 물질 및 이를 포함하는 장치 |
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CN111293138A (zh) * | 2018-12-07 | 2020-06-16 | 中国科学院上海微系统与信息技术研究所 | 三维mram存储结构及其制作方法 |
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US7313013B2 (en) * | 2004-11-18 | 2007-12-25 | International Business Machines Corporation | Spin-current switchable magnetic memory element and method of fabricating the memory element |
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2004
- 2004-11-18 US US10/990,401 patent/US7313013B2/en active Active
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2005
- 2005-08-12 CN CN2005800395560A patent/CN101076865B/zh not_active Expired - Fee Related
- 2005-08-12 WO PCT/US2005/028759 patent/WO2006055062A1/en active Search and Examination
-
2007
- 2007-10-09 US US11/869,593 patent/US7894245B2/en active Active
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2011
- 2011-02-04 US US13/020,925 patent/US8310863B2/en active Active
-
2012
- 2012-09-14 US US13/619,588 patent/US8861262B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021102750A1 (zh) * | 2019-11-27 | 2021-06-03 | 华为技术有限公司 | 一种自旋逻辑器件、电路、控制方法及处理装置 |
Also Published As
Publication number | Publication date |
---|---|
US20080025082A1 (en) | 2008-01-31 |
US20130009261A1 (en) | 2013-01-10 |
WO2006055062A1 (en) | 2006-05-26 |
US8310863B2 (en) | 2012-11-13 |
CN101076865B (zh) | 2010-05-26 |
US7894245B2 (en) | 2011-02-22 |
US8861262B2 (en) | 2014-10-14 |
US7313013B2 (en) | 2007-12-25 |
US20060104110A1 (en) | 2006-05-18 |
US20110124133A1 (en) | 2011-05-26 |
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