CN101068015B - 用于低功率应用的电可编程集成熔丝装置和构造方法 - Google Patents

用于低功率应用的电可编程集成熔丝装置和构造方法 Download PDF

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Publication number
CN101068015B
CN101068015B CN2007101010674A CN200710101067A CN101068015B CN 101068015 B CN101068015 B CN 101068015B CN 2007101010674 A CN2007101010674 A CN 2007101010674A CN 200710101067 A CN200710101067 A CN 200710101067A CN 101068015 B CN101068015 B CN 101068015B
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China
Prior art keywords
doped polysilicon
conductive layer
area
thickness
fuse link
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CN2007101010674A
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Chinese (zh)
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CN101068015A (zh
Inventor
高荣健
具滋钦
宣敏喆
罗伯特·韦泽
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Samsung Electronics Co Ltd
Infineon Technologies North America Corp
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Samsung Electronics Co Ltd
Infineon Technologies North America Corp
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Publication of CN101068015A publication Critical patent/CN101068015A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN2007101010674A 2006-04-26 2007-04-26 用于低功率应用的电可编程集成熔丝装置和构造方法 Active CN101068015B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/411,341 2006-04-26
US11/411,341 US7576407B2 (en) 2006-04-26 2006-04-26 Devices and methods for constructing electrically programmable integrated fuses for low power applications

Publications (2)

Publication Number Publication Date
CN101068015A CN101068015A (zh) 2007-11-07
CN101068015B true CN101068015B (zh) 2012-07-18

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Family Applications (1)

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CN2007101010674A Active CN101068015B (zh) 2006-04-26 2007-04-26 用于低功率应用的电可编程集成熔丝装置和构造方法

Country Status (5)

Country Link
US (1) US7576407B2 (enExample)
JP (1) JP5165272B2 (enExample)
KR (1) KR100872882B1 (enExample)
CN (1) CN101068015B (enExample)
DE (1) DE102007020903A1 (enExample)

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US7732893B2 (en) * 2007-03-07 2010-06-08 International Business Machines Corporation Electrical fuse structure for higher post-programming resistance
US7888771B1 (en) * 2007-05-02 2011-02-15 Xilinx, Inc. E-fuse with scalable filament link
US7759766B2 (en) * 2007-08-22 2010-07-20 International Business Machines Corporation Electrical fuse having a thin fuselink
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KR100967037B1 (ko) * 2007-10-17 2010-06-29 주식회사 하이닉스반도체 퓨즈 박스 및 그 형성 방법
US8791547B2 (en) * 2008-01-21 2014-07-29 Infineon Technologies Ag Avalanche diode having an enhanced defect concentration level and method of making the same
US8829645B2 (en) * 2008-06-12 2014-09-09 International Business Machines Corporation Structure and method to form e-fuse with enhanced current crowding
US9892221B2 (en) 2009-02-20 2018-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system of generating a layout including a fuse layout pattern
US8519507B2 (en) * 2009-06-29 2013-08-27 International Business Machines Corporation Electrically programmable fuse using anisometric contacts and fabrication method
DE102009055368A1 (de) * 2009-12-29 2012-03-29 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Siliziumbasiertes Halbleiterbauelement mit E-Sicherungen, die durch eine eingebettete Halbleiterlegierung hergestellt sind
DE102009055439A1 (de) * 2009-12-31 2011-07-07 GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG, 01109 Halbleiterbauelement mit halbleiterbasierten e-Sicherungen mit besserer Programmiereffizienz durch erhöhte Metallagglomeration und/oder Hohlraumbildung
US8987102B2 (en) * 2011-07-27 2015-03-24 Applied Materials, Inc. Methods of forming a metal silicide region in an integrated circuit
US8981523B2 (en) * 2012-03-14 2015-03-17 International Business Machines Corporation Programmable fuse structure and methods of forming
CN102738075A (zh) * 2012-07-27 2012-10-17 上海华力微电子有限公司 电子可编程熔丝空置接触孔添加方法以及电子可编程熔丝
CN102760720B (zh) * 2012-07-27 2015-05-20 上海华力微电子有限公司 电子可编程熔丝空置有源区添加方法以及电子可编程熔丝
CN103915410B (zh) * 2013-01-08 2017-06-13 中芯国际集成电路制造(上海)有限公司 半导体器件和半导体器件的制作方法
US9171801B2 (en) 2013-05-09 2015-10-27 Globalfoundries U.S. 2 Llc E-fuse with hybrid metallization
US9536830B2 (en) 2013-05-09 2017-01-03 Globalfoundries Inc. High performance refractory metal / copper interconnects to eliminate electromigration
US9305879B2 (en) * 2013-05-09 2016-04-05 Globalfoundries Inc. E-fuse with hybrid metallization
CN105826238A (zh) * 2015-01-06 2016-08-03 中芯国际集成电路制造(上海)有限公司 电可编程熔丝结构及其形成方法
US9754903B2 (en) * 2015-10-29 2017-09-05 Globalfoundries Inc. Semiconductor structure with anti-efuse device
WO2018004633A1 (en) * 2016-06-30 2018-01-04 Intel Corporation Fuse array for integrated circuit
KR102573736B1 (ko) 2016-09-19 2023-09-04 에스케이하이닉스 주식회사 퓨즈 구조체 및 그것의 제조방법
CN109937275B (zh) 2016-12-26 2021-01-08 学校法人金泽工业大学 经染色的聚丙烯纤维结构物和使用其的服装
US11476190B2 (en) 2016-12-30 2022-10-18 Intel Corporation Fuse lines and plugs for semiconductor devices
US10615119B2 (en) * 2017-12-12 2020-04-07 International Business Machines Corporation Back end of line electrical fuse structure and method of fabrication
JP2024015652A (ja) * 2022-07-25 2024-02-06 ルネサスエレクトロニクス株式会社 半導体装置

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US5882998A (en) * 1996-12-27 1999-03-16 Vlsi Technology, Inc. Low power programmable fuse structures and methods for making the same
CN1212457A (zh) * 1997-09-19 1999-03-31 西门子公司 在集成电路上形成电可熔断熔丝的制造方法

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US5882998A (en) * 1996-12-27 1999-03-16 Vlsi Technology, Inc. Low power programmable fuse structures and methods for making the same
CN1212457A (zh) * 1997-09-19 1999-03-31 西门子公司 在集成电路上形成电可熔断熔丝的制造方法

Also Published As

Publication number Publication date
DE102007020903A1 (de) 2007-10-31
JP2007294961A (ja) 2007-11-08
KR100872882B1 (ko) 2008-12-10
US7576407B2 (en) 2009-08-18
JP5165272B2 (ja) 2013-03-21
KR20070105871A (ko) 2007-10-31
CN101068015A (zh) 2007-11-07
US20070252237A1 (en) 2007-11-01

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