JP5165272B2 - 低電力アプリケーションのための電気的にプログラム可能な集積ヒューズ装置及びその形成方法 - Google Patents

低電力アプリケーションのための電気的にプログラム可能な集積ヒューズ装置及びその形成方法 Download PDF

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JP5165272B2
JP5165272B2 JP2007108608A JP2007108608A JP5165272B2 JP 5165272 B2 JP5165272 B2 JP 5165272B2 JP 2007108608 A JP2007108608 A JP 2007108608A JP 2007108608 A JP2007108608 A JP 2007108608A JP 5165272 B2 JP5165272 B2 JP 5165272B2
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doped
polysilicon
region
polysilicon region
conductive layer
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JP2007294961A (ja
JP2007294961A5 (enExample
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榮健 高
滋欽 具
敏▲チュル▼ 宣
ロバート・ヴァイザー
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2007108608A 2006-04-26 2007-04-17 低電力アプリケーションのための電気的にプログラム可能な集積ヒューズ装置及びその形成方法 Active JP5165272B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/411,341 2006-04-26
US11/411,341 US7576407B2 (en) 2006-04-26 2006-04-26 Devices and methods for constructing electrically programmable integrated fuses for low power applications

Publications (3)

Publication Number Publication Date
JP2007294961A JP2007294961A (ja) 2007-11-08
JP2007294961A5 JP2007294961A5 (enExample) 2010-06-03
JP5165272B2 true JP5165272B2 (ja) 2013-03-21

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JP2007108608A Active JP5165272B2 (ja) 2006-04-26 2007-04-17 低電力アプリケーションのための電気的にプログラム可能な集積ヒューズ装置及びその形成方法

Country Status (5)

Country Link
US (1) US7576407B2 (enExample)
JP (1) JP5165272B2 (enExample)
KR (1) KR100872882B1 (enExample)
CN (1) CN101068015B (enExample)
DE (1) DE102007020903A1 (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070284693A1 (en) * 2006-06-09 2007-12-13 International Business Machines Corporation Electrically programmable fuse with asymmetric structure
JP2008166441A (ja) * 2006-12-27 2008-07-17 Spansion Llc 半導体装置およびその製造方法
US7732898B2 (en) * 2007-02-02 2010-06-08 Infineon Technologies Ag Electrical fuse and associated methods
US7851885B2 (en) * 2007-03-07 2010-12-14 International Business Machines Corporation Methods and systems involving electrically programmable fuses
US7732893B2 (en) * 2007-03-07 2010-06-08 International Business Machines Corporation Electrical fuse structure for higher post-programming resistance
US7888771B1 (en) * 2007-05-02 2011-02-15 Xilinx, Inc. E-fuse with scalable filament link
US7759766B2 (en) * 2007-08-22 2010-07-20 International Business Machines Corporation Electrical fuse having a thin fuselink
US7619295B2 (en) * 2007-10-10 2009-11-17 Fairchild Semiconductor Corporation Pinched poly fuse
KR100967037B1 (ko) * 2007-10-17 2010-06-29 주식회사 하이닉스반도체 퓨즈 박스 및 그 형성 방법
US8791547B2 (en) * 2008-01-21 2014-07-29 Infineon Technologies Ag Avalanche diode having an enhanced defect concentration level and method of making the same
US8829645B2 (en) * 2008-06-12 2014-09-09 International Business Machines Corporation Structure and method to form e-fuse with enhanced current crowding
US9892221B2 (en) 2009-02-20 2018-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system of generating a layout including a fuse layout pattern
US8519507B2 (en) * 2009-06-29 2013-08-27 International Business Machines Corporation Electrically programmable fuse using anisometric contacts and fabrication method
DE102009055368A1 (de) * 2009-12-29 2012-03-29 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Siliziumbasiertes Halbleiterbauelement mit E-Sicherungen, die durch eine eingebettete Halbleiterlegierung hergestellt sind
DE102009055439A1 (de) * 2009-12-31 2011-07-07 GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG, 01109 Halbleiterbauelement mit halbleiterbasierten e-Sicherungen mit besserer Programmiereffizienz durch erhöhte Metallagglomeration und/oder Hohlraumbildung
US8987102B2 (en) * 2011-07-27 2015-03-24 Applied Materials, Inc. Methods of forming a metal silicide region in an integrated circuit
US8981523B2 (en) * 2012-03-14 2015-03-17 International Business Machines Corporation Programmable fuse structure and methods of forming
CN102738075A (zh) * 2012-07-27 2012-10-17 上海华力微电子有限公司 电子可编程熔丝空置接触孔添加方法以及电子可编程熔丝
CN102760720B (zh) * 2012-07-27 2015-05-20 上海华力微电子有限公司 电子可编程熔丝空置有源区添加方法以及电子可编程熔丝
CN103915410B (zh) * 2013-01-08 2017-06-13 中芯国际集成电路制造(上海)有限公司 半导体器件和半导体器件的制作方法
US9171801B2 (en) 2013-05-09 2015-10-27 Globalfoundries U.S. 2 Llc E-fuse with hybrid metallization
US9536830B2 (en) 2013-05-09 2017-01-03 Globalfoundries Inc. High performance refractory metal / copper interconnects to eliminate electromigration
US9305879B2 (en) * 2013-05-09 2016-04-05 Globalfoundries Inc. E-fuse with hybrid metallization
CN105826238A (zh) * 2015-01-06 2016-08-03 中芯国际集成电路制造(上海)有限公司 电可编程熔丝结构及其形成方法
US9754903B2 (en) * 2015-10-29 2017-09-05 Globalfoundries Inc. Semiconductor structure with anti-efuse device
WO2018004633A1 (en) * 2016-06-30 2018-01-04 Intel Corporation Fuse array for integrated circuit
KR102573736B1 (ko) 2016-09-19 2023-09-04 에스케이하이닉스 주식회사 퓨즈 구조체 및 그것의 제조방법
CN109937275B (zh) 2016-12-26 2021-01-08 学校法人金泽工业大学 经染色的聚丙烯纤维结构物和使用其的服装
US11476190B2 (en) 2016-12-30 2022-10-18 Intel Corporation Fuse lines and plugs for semiconductor devices
US10615119B2 (en) * 2017-12-12 2020-04-07 International Business Machines Corporation Back end of line electrical fuse structure and method of fabrication
JP2024015652A (ja) * 2022-07-25 2024-02-06 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2222491A (en) * 1939-08-05 1940-11-19 Timken Roller Bearing Co Sliding bearing
JPH04147648A (ja) * 1990-10-11 1992-05-21 Nec Ic Microcomput Syst Ltd 半導体装置
US5844297A (en) * 1995-09-26 1998-12-01 Symbios, Inc. Antifuse device for use on a field programmable interconnect chip
US5708291A (en) * 1995-09-29 1998-01-13 Intel Corporation Silicide agglomeration fuse device
US5783467A (en) * 1995-12-29 1998-07-21 Vlsi Technology, Inc. Method of making antifuse structures using implantation of both neutral and dopant species
DE19604776A1 (de) 1996-02-09 1997-08-14 Siemens Ag Auftrennbare Verbindungsbrücke (Fuse) und verbindbare Leitungsunterbrechung (Anti-Fuse), sowie Verfahren zur Herstellung und Aktivierung einer Fuse und einer Anti-Fuse
US5899707A (en) * 1996-08-20 1999-05-04 Vlsi Technology, Inc. Method for making doped antifuse structures
US5976943A (en) * 1996-12-27 1999-11-02 Vlsi Technology, Inc. Method for bi-layer programmable resistor
US5899736A (en) * 1997-09-19 1999-05-04 Siemens Aktiengesellschaft Techniques for forming electrically blowable fuses on an integrated circuit
JPH11187843A (ja) 1997-12-25 1999-07-13 Lotte Co Ltd 肥満改善用の飲食組成物およびこれを含有する飲食物
US6323535B1 (en) * 2000-06-16 2001-11-27 Infineon Technologies North America Corp. Electrical fuses employing reverse biasing to enhance programming
US6570207B2 (en) 2000-12-13 2003-05-27 International Business Machines Corporation Structure and method for creating vertical capacitor and anti-fuse in DRAM process employing vertical array device cell complex
US6707129B2 (en) * 2001-12-18 2004-03-16 United Microelectronics Corp. Fuse structure integrated wire bonding on the low k interconnect and method for making the same
US6815797B1 (en) * 2002-01-08 2004-11-09 National Semiconductor Corporation Silicide bridged anti-fuse
US6580156B1 (en) 2002-04-04 2003-06-17 Broadcom Corporation Integrated fuse with regions of different doping within the fuse neck
US6798684B2 (en) * 2002-04-04 2004-09-28 Broadcom Corporation Methods and systems for programmable memory using silicided poly-silicon fuses
JP2004228369A (ja) 2003-01-23 2004-08-12 Sony Corp 半導体装置およびフューズ溶断方法
JP2004335608A (ja) * 2003-05-02 2004-11-25 Sony Corp 半導体装置
US6806107B1 (en) * 2003-05-08 2004-10-19 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical fuse element test structure and method
US6956277B1 (en) * 2004-03-23 2005-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Diode junction poly fuse

Also Published As

Publication number Publication date
DE102007020903A1 (de) 2007-10-31
JP2007294961A (ja) 2007-11-08
KR100872882B1 (ko) 2008-12-10
US7576407B2 (en) 2009-08-18
CN101068015B (zh) 2012-07-18
KR20070105871A (ko) 2007-10-31
CN101068015A (zh) 2007-11-07
US20070252237A1 (en) 2007-11-01

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