CN101048886A - 可印刷的有机永久性被动存储器元件和其制造方法 - Google Patents

可印刷的有机永久性被动存储器元件和其制造方法 Download PDF

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Publication number
CN101048886A
CN101048886A CNA2005800372840A CN200580037284A CN101048886A CN 101048886 A CN101048886 A CN 101048886A CN A2005800372840 A CNA2005800372840 A CN A2005800372840A CN 200580037284 A CN200580037284 A CN 200580037284A CN 101048886 A CN101048886 A CN 101048886A
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CN
China
Prior art keywords
passive memory
electrode system
patterned electrode
patterned
memory element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005800372840A
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English (en)
Chinese (zh)
Inventor
L·利恩德斯
M·沃茨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agfa Gevaert NV
Original Assignee
Agfa Gevaert NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agfa Gevaert NV filed Critical Agfa Gevaert NV
Publication of CN101048886A publication Critical patent/CN101048886A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
CNA2005800372840A 2004-10-29 2005-10-24 可印刷的有机永久性被动存储器元件和其制造方法 Pending CN101048886A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04105412.3 2004-10-29
EP04105412 2004-10-29

Publications (1)

Publication Number Publication Date
CN101048886A true CN101048886A (zh) 2007-10-03

Family

ID=34929787

Family Applications (2)

Application Number Title Priority Date Filing Date
CNA2005800372840A Pending CN101048886A (zh) 2004-10-29 2005-10-24 可印刷的有机永久性被动存储器元件和其制造方法
CNA2005800372728A Pending CN101048885A (zh) 2004-10-29 2005-10-25 可印刷的有机永久性被动存储器元件和其制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNA2005800372728A Pending CN101048885A (zh) 2004-10-29 2005-10-25 可印刷的有机永久性被动存储器元件和其制造方法

Country Status (5)

Country Link
EP (2) EP1815542A1 (ja)
JP (2) JP2008518452A (ja)
KR (2) KR20070083852A (ja)
CN (2) CN101048886A (ja)
WO (2) WO2006045764A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108780842A (zh) * 2016-03-23 2018-11-09 于利奇研究中心有限公司 用于制造存储器的方法、存储器以及该存储器的应用

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2436893A (en) * 2006-03-31 2007-10-10 Seiko Epson Corp Inkjet printing of cross point passive matrix devices
WO2007128620A1 (en) * 2006-04-28 2007-11-15 Agfa-Gevaert Conventionally printable non-volatile passive memory element and method of making thereof.
EP1995736A1 (en) * 2007-05-22 2008-11-26 Rijksuniversiteit Groningen Ferro-electric device and modulatable injection barrier
JP4898850B2 (ja) * 2009-01-22 2012-03-21 住友化学株式会社 有機エレクトロルミネッセンス素子用インクジェットインクおよび有機エレクトロルミネッセンス素子の製造方法
US9177997B2 (en) 2011-12-13 2015-11-03 Sony Corporation Memory device
GB2547880A (en) * 2016-01-06 2017-09-06 Merenda Ltd Veneers

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW307048B (en) * 1996-11-22 1997-06-01 United Microelectronics Corp High density read only memory structure and manufacturing method thereof
JP4010091B2 (ja) * 2000-03-23 2007-11-21 セイコーエプソン株式会社 メモリデバイスおよびその製造方法
CN100558782C (zh) * 2001-03-29 2009-11-11 爱克发-格法特公司 含有一种3,4-二烷氧基噻吩的聚合物或共聚物和一种非牛顿粘结剂的水基组合物
KR100877210B1 (ko) * 2001-06-22 2009-01-07 아그파-게바에르트 3,4-디알콕시티오펜의 중합체 또는 공중합체를 포함하는플렉소 인쇄용 잉크
US7179534B2 (en) * 2003-01-31 2007-02-20 Princeton University Conductive-polymer electronic switch
US6656763B1 (en) * 2003-03-10 2003-12-02 Advanced Micro Devices, Inc. Spin on polymers for organic memory devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108780842A (zh) * 2016-03-23 2018-11-09 于利奇研究中心有限公司 用于制造存储器的方法、存储器以及该存储器的应用

Also Published As

Publication number Publication date
WO2006045764A1 (en) 2006-05-04
JP2008518452A (ja) 2008-05-29
EP1815542A1 (en) 2007-08-08
JP2008518453A (ja) 2008-05-29
EP1815543A1 (en) 2007-08-08
CN101048885A (zh) 2007-10-03
KR20070083852A (ko) 2007-08-24
KR20070073834A (ko) 2007-07-10
WO2006045783A1 (en) 2006-05-04

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SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20071003