CN101016622A - Chemical vapor deposition apparatus for flat display - Google Patents
Chemical vapor deposition apparatus for flat display Download PDFInfo
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- CN101016622A CN101016622A CNA2007100034722A CN200710003472A CN101016622A CN 101016622 A CN101016622 A CN 101016622A CN A2007100034722 A CNA2007100034722 A CN A2007100034722A CN 200710003472 A CN200710003472 A CN 200710003472A CN 101016622 A CN101016622 A CN 101016622A
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- chamber
- pedestal
- cooling block
- cooling
- equipment according
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
Abstract
The invention provides a chemical vapor deposition for flat display, which comprises: chamber, wherein deposition technology for the flat display is processed; base, located in the chamber to improve the top surface, whereon the flat display is located; and at least one cooling block, located on the bottom surface of the chamber to connect to the base when falls, and cooling the heated base. The cooling block cools the base in short time, so that reduces the stand by time of maintenance and repair of device.
Description
Technical field
The present invention relates to a kind of chemical vapor depsotition equipment that is used for flat-panel monitor, and more particularly, relate to a kind of chemical vapor depsotition equipment that is used for flat-panel monitor, wherein in the short period base-plate temp is being cooled to proper level by force relatively, is reducing so that be used for the waiting time of maintain/repair equipment.Therefore, improve productivity, and limited the generation of process loss.
Background technology
Flat-panel monitor has been widely used in for example product of personal portable terminals, televisor and computer monitor.The type of flat-panel monitor is diversified, cathode tube (cathode ray tube for example, CRT), liquid-crystal display (liquid crystal display, LCD), Plasmia indicating panel (plasmadisplay panel, PDP) and Organic Light Emitting Diode (organic light emitting diode, OLED).
Described LCD is a kind of device, it uses certain photoswitch, by between two thin up and down glass substrate, injecting liquid crystal as the intermediate materials between solid-state and the liquid state, and use the voltage difference between the electrode of up and down glass substrate to change the orientation (orientation) of liquid crystal molecule, and show character or image.Current velometer and the operating system that is widely used in from electronic product (for example electronic watch, electronic calculator, televisor and laptop computer) to aircraft of LCD.
Televisor has the size that 20 to 30 inches size and watch-dog have less than 17 inches has become main flow.Yet more and more preference has 40 inches or larger sized televisor and has 20 inches or larger sized computer monitor recently.
Therefore, LCD manufacturers has attempted producing bigger glass substrate.At present, carry out many researchs come at have 1950 * 2250mm or 1870 * 2200mm size the 7th generation product have 2160 * 2460mm or larger sized the 8th generation product increase the size of glass substrate.
Main by TFT technology (wherein repeated deposition, photoetching and etching), unit (cell) technology (wherein assembling upper and lower glass substrate) and the module process that is used to finish LCD make LCD.
In the chemical vapor deposition method as one of many technologies, the high-octane silica-based one-tenth segregant that has that is under the isoionic state owing to external high frequency power passes electrode and is deposited on the glass substrate from gas distribution plate injection.Described technology is carried out in chamber.
As will not describing the person after a while, provide pedestal (on described pedestal, load and stand sedimentary glass substrate) at the lower region of the chamber that is used for carrying out chemical vapor deposition method, and in the upper area of chamber, provide electrode.When on the upper surface that glass substrate is carried in pedestal, pedestal is heated to about 400 ℃ temperature.Then, pedestal rises glass substrate is positioned near the gas distribution plate place that is positioned at the electrode below.Then, apply electric power, make described electrode and chamber insulation by using Teflon (Teflon) as insulating component by electrode.When the gas distribution plate with many apertures is passed in silica-based one-tenth segregant injection, carry out depositing operation with respect to glass substrate.
After the depositing operation that repeats with respect to glass substrate, the various parts in the chamber (surrounding structure that comprises chamber) need maintenance and repair work.After the temperature that is heated to about 400 ℃ pedestal is reduced to below 100 ℃ and is exposed to chamber in the air, carry out maintenance and repair work.
Yet, be used for the conventional chemical vapor deposition apparatus of flat-panel monitor, owing to need about temperature that will be heated to about 400 ℃ pedestal in 24 hours to be reduced to about below 100 ℃ usually, thereby there is a problem, that is, need the plenty of time to reduce base-plate temp to carry out maintenance and repair work.This is because only undertaken heat passage by the radiation under the vacuum state in chamber interior.
That is to say, in routine techniques because in order to carry out maintenance and repair work, need base-plate temp was reduced to from about 400 ℃ in about 24 hours about below 100 ℃, thereby the waiting time that is used for maintenance and repair work prolonged.Therefore, reduced the operation rate of equipment, and thereby productivity is descended, thereby produced process loss.
Summary of the invention
In order to solve above and/or other problem, the invention provides a kind of chemical vapor depsotition equipment that is used for flat-panel monitor, its by force cooling base relatively in the short period base-plate temp is being reduced to proper level, so that can reduce the waiting time that is used for maintenance and repair work, the operation rate that can improve equipment and its productivity, and can prevent the generation of process loss.
The invention provides a kind of chemical vapor depsotition equipment that is used for flat-panel monitor, it can reduce the impact that pedestal is caused because quick heat dissipates, and prevents to produce the crack owing to the sudden imbalance of temperature in pedestal.
According to an aspect of the present invention, a kind of chemical vapor depsotition equipment that is used for flat-panel monitor comprises: chamber, the depositing operation of execution flat-panel monitor in described chamber; Pedestal, it is installed in the chamber, can promote and have upper surface, loads flat-panel monitor on described upper surface; And at least one cooling block, it is provided on the lower surface of described chamber, with contact pedestal when described pedestal descends, and cooling heated pedestal during depositing operation.
Pedestal descend and the contact cooling piece before, come filled chamber with in hydrogen and the helium any one, described gas reduces the temperature of pedestal gradually, to prevent pedestal because contact cooling piece and cooling off fast.
Described pedestal comprises: the substrate loading section, and it flatly is configured in the chamber and support flat panel display; And pillar, its upper end is fixed on the center of described substrate loading section, and the lower wall of chamber is passed to be configured in the chamber outside in its lower end, the upper surface of wherein said cooling block is parallel to the lower surface of substrate loading section in fact, contacts so that cooling block has the surface with the lower surface of substrate loading section.
Described cooling block comprises: main part, and it contacts the lower surface of described chamber; And the cooling circuit, it is provided in the described main part, and predetermined refrigerant circulates by described cooling circuit.
At the maintenance and repair on period of chamber, described refrigerant circulates in described cooling circuit.
Described refrigerant is any one in water and the nitrogen.
Described equipment further comprises the base support of supporting base, and wherein cooling block is provided at the opposite side place about described pedestal supporter.
Described cooling block is stacked on the lower surface of chamber.
At least a portion of described cooling block is buried in the lower surface of chamber, so that expose the upper surface of cooling block from the lower surface of chamber.
Described flat-panel monitor is to be used for liquid-crystal display (liquid crystal display, big glass substrate LCD).
Description of drawings
To be more readily understood above and other feature and advantage of the present invention by describing the preferred embodiments of the present invention with reference to the accompanying drawings in detail, in the accompanying drawings:
Fig. 1 explanation is used for the structure of the chemical vapor depsotition equipment of flat-panel monitor according to an embodiment of the invention.
Fig. 2 is the part enlarged view of the pedestal of contact cooling piece.
Fig. 3 is the cross-sectional view of the cooling block of Fig. 2.
Fig. 4 explanation is used for the structure of the chemical vapor depsotition equipment of flat-panel monitor according to another embodiment of the present invention.
Fig. 5 is the part enlarged view according to the chemical vapor depsotition equipment that is used for flat-panel monitor of further embodiment of this invention.
Fig. 6 is the skeleton view of the chemical vapor depsotition equipment that is used for flat-panel monitor according to yet another embodiment of the invention.
10: chamber 11: lower surface
17: gas distribution plate 26: insulating body
30: pedestal 31: the substrate loading section
40: base support 50: cooling block
51: main part 53: the cooling circuit
Embodiment
Illustrate that with reference to being used to the accompanying drawing of the preferred embodiment of the present invention is in order to fully understand the present invention, its advantage and the purpose that realizes by enforcement the present invention.
Hereinafter, will be by explaining that with reference to the accompanying drawings the preferred embodiments of the present invention are to describe the present invention in detail.Similar reference numeral in the accompanying drawing is meant similar elements.
Fig. 1 explanation is used for the structure of the chemical vapor depsotition equipment of flat-panel monitor according to an embodiment of the invention.With reference to figure 1, the chemical vapor depsotition equipment 1 that is used for flat-panel monitor comprises: chamber 10; Electrode 16, it is provided in the top of described chamber 10 and to standing the predetermined silica-based one-tenth segregant of sedimentary flat-panel monitor G emission; Pedestal 30, it is configured in electrode 16 belows and loads described flat-panel monitor G on described pedestal; And a plurality of base support 40, it is at pedestal 30 supported underneath pedestals 30.
Seal the outer wall of this chamber 10 from the outside, with the vacuum state of the deposition space S that keeps chamber 10 inside.With the deposition space S of rare gas element (for example He or Ar) filled chamber 10, not influence silica-based one-tenth segregant, described silica-based one-tenth segregant is the deposition material that is produced by electrode 16.In the outer wall of chamber 10, form opening 10a, make flat-panel monitor G can pass described opening 10a.Although do not illustrate, described opening 10a is is optionally opened and closed by door (not shown).
As mentioned above, flat-panel monitor G can be cathode tube (cathode ray tube, CRT), liquid-crystal display (liquid crystal display, LCD), Plasmia indicating panel (plasma displaypanel, PDP) and Organic Light Emitting Diode (organic light emitting diode, OLED) in any one.Yet in the present embodiment, the big glass substrate g that is used for LCD is taken as flat-panel monitor G.Speech " greatly " mean the aforesaid the 7th or the 8th generation product size.In the following description, flat-panel monitor G is described to glass substrate G.
Long-range (remote) plasma body 18 is provided above chamber 10 outsides, and the purge gas that its supply is scheduled to is to remove the impurity that exists in the chamber 10.High frequency power unit 20 is installed around remote plasma 18.Described high frequency power unit 20 is connected to electrode 16 by wire 22.Between the outer wall of electrode 16 and chamber 10, provide isolator 26, being electrically connected between the outer wall that prevents electrode 16 and chamber 10, when electrode 16 directly described electrical connection can take place during the outer wall of contact chambers 10.Can make isolator 26 by using (for example) Teflon (Teflon).Between gas distribution plate 17 and electrode 16, form waste gas cushioning pocket part 19.
When pedestal 30 is raised module 36 and promotes, between the pillar 32 of pedestal 30 and through hole 10b, must not produce any space.Therefore, around through hole 10b, provide in order to surround the corrugated tube 34 of pillar 32 outsides.Described corrugated tube 34 extends when pedestal 30 descends, and shrinks to prevent producing the space between pillar 32 and through hole 10b when pedestal 30 rises.
Provide a plurality of stripper pins 38 at substrate loading section 31 places, described stripper pin stably supports the lower surface of the glass substrate G that is loaded and is removed, and above substrate loading section 31 glass-guiding substrate G.Stripper pin 38 passes substrate loading section 31 through being installed as.When hoisting module 36 when reducing pedestal 30, the lower end of stripper pin 38 is pushed by the lower surface of chamber 10, so that the upper end of stripper pin 38 is outstanding from the upper surface of substrate loading section 31.As a result, glass substrate G separates with substrate loading section 31.On the contrary, when pedestal 30 rose, stripper pin 38 moved down, so that glass substrate G closely contacts the upper surface of substrate loading section 31.Therefore, stripper pin 38 forms the space between glass substrate G and substrate loading section 31, so that mechanical manipulator (not shown) can easily be caught the glass substrate G that is carried on the substrate loading section 31.
As mentioned above, relatively large and heavy according to the pedestal 30 of the 7th or the 8th generation technique, so that pedestal 30 can descend to bend owing to gravity.In the case, glass substrate G may be therefore curved down.Therefore, can below the substrate loading section 31 of pedestal 30, provide base support 40.Because substrate loading section 31 is slightly greater than glass substrate G, thus from centre strut 32 in the radial direction towards the outside of substrate loading section 31, the following curved of substrate loading section 31 becomes serious further.Therefore, provide base support 40 in the outside of the substrate loading section 31 of pedestal 30, described base support 40 is separated from one another, and is curved with the substrate loading section that prevents pedestal 30 31 times.
Each has described base support 40: head part 41, and it is positioned at the lower surface place near substrate loading section 31; And bar part 42, its pillar 32 that is parallel to pedestal 30 extends from described head part 41.The end portion of described bar part 42 is similar to pillar 32 and incorporates in the hoisting module 36.Therefore, when hoisting module 36 began to operate, base support 40 promoted with pedestal 30.Form corrugated tube 34a at bar part 42 places.
Fig. 2 is the part enlarged view of the pedestal of contact cooling piece.Fig. 3 is the cross-sectional view of the cooling block of Fig. 2.As mentioned above, when repeating depositing operation, need carry out maintenance and repair work to chamber 10 about glass substrate G.Need be reduced in the temperature that will be heated at least 400 ℃ pedestal 30 and carry out maintenance and repair work after below 100 ℃ approximately.Therefore,, need cooling base 30 by force, the temperature of pedestal 30 is reduced to proper temperature so that can be in short period relatively in order to carry out rapidly maintenance and repair work.Cooling segment 50 is used for this purpose.
Referring to Fig. 1,2 and 3, cooling segment 50 is stacked on the lower surface 11 of chamber 10.Cooling block 50 can not move arbitrarily in the zone of the lower surface 11 of chamber 10.Therefore, use screw rod or cooling block 50 is fixed to the lower surface 11 of chamber 10 with welding process.Cooling block 50 can be provided as size and equal single of substrate loading section 31, or shown in Figure 4 and 5, is provided as about two pieces of substrate support 40 at the opposite side place.The number of plumber block and size are as long as cooling block 50 can be reduced to the temperature that is heated to about 400 ℃ pedestal 30 below 100 ℃ rapidly, just not enough.
Referring to Fig. 3, cooling block 50 almost has rectangular shape.Yet the present invention is not limited to this.Because when cooling block 50 had surperficial the contact with the lower surface of substrate loading section 31 in big zone, cooling efficiency was improved, thereby the preferred parallel of upper surface at least of cooling block 50 forms in the lower surface of described substrate loading section 31.
The opposite end of cooling circuit 53 needs separated from one another, so that refrigerant circulates by cooling circuit 53.Coolant supply (not shown) and pump (not shown) by supply coolant are fed to refrigerant an end 53a who cools off circuit 53.The other end 53b of cooling circuit 53 need have a structure and discharge through coolant circulating.In the present embodiment, although omitted the detailed description of general structure, as need to adopt any well-known structure about cooling circuit 53.
As mentioned above, when pedestal 30 declines are worked with the maintenance and repair of carrying out chamber 10, come cooling base 30 by contact along cooling circuit 53 coolant circulating.Yet, when being heated to 400 ℃ pedestal 30 contact cooling pieces 50 (relatively colder refrigerant flows) with quick heat dissipation in described cooling block 50, heat dissipates and can impact or because the sudden imbalance of temperature and produce the crack in pedestal 30 to pedestal 30 fast.
Therefore, pedestal 30 descend gradually with carry out maintenance and repair work and with cooling block 50 at a distance of predetermined gap, come the inside of filled chamber 10 with in hydrogen and the helium any one, so that come cooling base 30 gradually by gas is heat passage.By hole 24 hydrogen or helium are expelled in the chamber 10, described hole 24 is formed on the central part office of electrode 16.After being cooled to a certain degree, by being in direct contact with quick cooling base 30 under the situation that does not have thermal stresses.
Operation and function at the chemical vapor depsotition equipment that is used for flat-panel monitor 1 that as above disposes, at first, will by mechanical manipulator move stand sedimentary glass substrate G with a kind of state configuration above the substrate loading section 31 of pedestal 30, in described state, pedestal 30 and base support 40 are moved down into the bottom of chamber 10 by this hoisting module 36.
Because the upper end of stripper pin 38 is projected into predetermined height from the upper surface of substrate loading section 31, thereby mechanical manipulator is placed on glass substrate G on the stripper pin 38 and then withdrawal.When withdrawal during mechanical manipulator, the inner sustain of chamber 10 is at vacuum state and fill with depositing required rare gas element He or Ar simultaneously.
Then, for depositing operation, operate this hoisting module 36 so that pedestal 30 and base support 40 rise together.Then, stripper pin 38 descends and glass substrate G is loaded, and closely contacts the upper surface of substrate loading section 31 simultaneously.When pedestal 30 is raised to position shown in Figure 1 haply, stop the operation of this hoisting module 36, and glass substrate G is positioned under the electrode 16.This moment, pedestal 30 is heated to about 400 ℃.
Then, by applying electric power with isolator 26 insulating electrodes 16.Launch silica-based one-tenth segregant and described silica-based one-tenth segregant reaches glass substrate G place by gas distribution plate 17, so that on glass substrate G, carry out deposition with a large amount of apertures.
After the depositing operation of finishing at glass substrate G, in order to carry out the maintenance and repair work of chamber 10, pedestal 30 descends.Come filled chamber 10 with in hydrogen and the helium any one, and refrigerant circulates in the cooling circuit 53 of cooling block 50.When pedestal 30 descends and during the upper surface of the lower surface contact cooling piece 50 of substrate loading section 31, transmit the about 400 ℃ heat of pedestal 30 and described heat by the main part 51 of cooling block 50 and be dissipated to by cooling circuit 53 and carry out coolant circulating.
By these a series of heat crimping and transfer processes, the substrate loading section 31 of pedestal 30 can be cooled to below 100 ℃, below 100 ℃ required appropriate temperature.Compare with routine techniques, do like this and can greatly shorten the treatment time.When the temperature with pedestal 30 is reduced to below 100 ℃, the interior exposed of chamber 10 to extraneous air, and is carried out maintenance and repair work.
According to present embodiment, owing to can in the short period pedestal 30 be cooled to appropriate temperature by force relatively, thereby can reduce the waiting time of maintenance and repair work.Therefore, operation rate that can improve equipment and productivity, and can prevent the generation of process loss.
Fig. 5 is the part enlarged view according to the chemical vapor depsotition equipment that is used for flat-panel monitor of further embodiment of this invention.In the previous embodiment of Fig. 1, on the lower surface 11 of chamber 10, pile up cooling block 50.Yet in the present embodiment, groove 11a is formed in the lower surface 11 of chamber 10, and cooling block 50 parts are inserted among the described groove 11a.The present embodiment of Fig. 5 can produce effect of the present invention fully.Equally, cooling block 50 can be buried fully, so that the lower surface 11 of the upper surface of cooling block 50 and chamber 10 is positioned on the same level.
In the above-described embodiments, the size of cooling block 50 is similar to or slightly less than substrate loading section 31.Yet, cooling block 50a can be made into reduced size and be provided on the lower surface 11 of chamber 10.In the case, many cooling block 50a are installed.In addition, the cooling circuit 53 that is provided among the cooling block 50a can be uniline in main part 51 or be configured to Z-shaped (as shown in Figure 6).
Although illustrate and described the present invention especially with reference to the preferred embodiment of the present invention, but be understood by those skilled in the art that, under the situation that does not break away from the spirit and scope of the invention that defines by appended claims, can make the various variations on form and the details therein.
As mentioned above, according to the present invention, because cooling base thereby can reduce the waiting time of maintenance of the equipment and repair time relatively in the short period base-plate temp being reduced to appropriate level by force.Therefore, improve operation rate and its productivity of equipment, and prevented the generation of process loss.Equally, can reduce the impact that pedestal is caused because quick heat dissipates, and can prevent from pedestal, to produce the crack owing to the sudden imbalance of temperature.
Claims (10)
1, a kind of chemical vapor depsotition equipment that is used for flat-panel monitor, it is characterized in that: described equipment comprises:
Chamber is carried out the depositing operation that is used for described flat-panel screens in described chamber;
Pedestal, it is installed in the described chamber, can promote and have upper surface, loads described flat-panel monitor on described upper surface; And
At least one cooling block, it is provided on the lower surface of described chamber, when described pedestal descends, contacting described pedestal, and cooling heated described pedestal during described depositing operation.
2, equipment according to claim 1, it is characterized in that, wherein before described pedestal descends and contacts described cooling block, fill described chamber with in hydrogen and the helium any one, described gas reduces the temperature of described pedestal gradually, cools off described pedestal fast owing to contact with described cooling block to prevent.
3, equipment according to claim 1 is characterized in that, wherein said pedestal comprises:
The substrate loading section, it flatly is configured in the described chamber and supports described flat-panel monitor; And
Pillar, it has the upper end, and described upper end is fixed on the center of described substrate loading section; And the lower end, the lower wall that described chamber is passed in described lower end to be being configured in described chamber outside,
The upper surface of wherein said cooling block is parallel to the lower surface of described substrate loading section in fact, contacts so that described cooling block has the surface with the described lower surface of described substrate loading section.
4, equipment according to claim 3 is characterized in that, wherein said cooling block comprises:
Main part, it contacts the described lower surface of described chamber; And
The cooling circuit, it is provided in the described main part, and predetermined refrigerant circulates by described cooling circuit.
5, equipment according to claim 4 is characterized in that, wherein during the maintenance and repairs of described chamber, described refrigerant circulates in described cooling circuit.
6, equipment according to claim 4 is characterized in that, wherein said refrigerant is any one in water and the nitrogen.
7, equipment according to claim 4 is characterized in that, it further comprises the base support that supports described pedestal, and wherein said cooling block is provided at the opposite side place about described base support.
8, equipment according to claim 1 is characterized in that, wherein said cooling block is stacked on the described lower surface of described chamber.
9, equipment according to claim 1 is characterized in that, at least a portion of wherein said cooling block is buried in the described lower surface of described chamber, so that expose the described upper surface of described cooling block from the described lower surface of described chamber.
10, equipment according to claim 1 is characterized in that, wherein said flat-panel monitor is the big glass substrate that is used for liquid-crystal display.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2006-0011598 | 2006-02-07 | ||
| KR1020060011598 | 2006-02-07 | ||
| KR1020060011598A KR100738873B1 (en) | 2006-02-07 | 2006-02-07 | Chemical vapor deposition apparatus for flat display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101016622A true CN101016622A (en) | 2007-08-15 |
| CN101016622B CN101016622B (en) | 2011-11-23 |
Family
ID=38504146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007100034722A Expired - Fee Related CN101016622B (en) | 2006-02-07 | 2007-02-05 | Chemical vapor deposition apparatus for flat display |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR100738873B1 (en) |
| CN (1) | CN101016622B (en) |
| TW (1) | TWI344997B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104046961A (en) * | 2013-03-11 | 2014-09-17 | 灿美工程股份有限公司 | Substrate supporter and substrate processing apparatus including the same |
| CN111304636A (en) * | 2018-12-12 | 2020-06-19 | 三星显示有限公司 | Deposition apparatus including heat dissipation member |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI722944B (en) * | 2020-07-20 | 2021-03-21 | 天虹科技股份有限公司 | Thin-film deposition apparatus and thin-film deposition method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100203780B1 (en) | 1996-09-23 | 1999-06-15 | 윤종용 | Heat treating apparatus for semiconductor wafer |
| US6108937A (en) | 1998-09-10 | 2000-08-29 | Asm America, Inc. | Method of cooling wafers |
| US6635117B1 (en) | 2000-04-26 | 2003-10-21 | Axcelis Technologies, Inc. | Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system |
-
2006
- 2006-02-07 KR KR1020060011598A patent/KR100738873B1/en not_active IP Right Cessation
-
2007
- 2007-02-05 CN CN2007100034722A patent/CN101016622B/en not_active Expired - Fee Related
- 2007-02-05 TW TW096104053A patent/TWI344997B/en not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104046961A (en) * | 2013-03-11 | 2014-09-17 | 灿美工程股份有限公司 | Substrate supporter and substrate processing apparatus including the same |
| CN104046961B (en) * | 2013-03-11 | 2016-11-23 | 灿美工程股份有限公司 | Substrate holder and comprise the substrate-treating apparatus of described substrate holder |
| CN111304636A (en) * | 2018-12-12 | 2020-06-19 | 三星显示有限公司 | Deposition apparatus including heat dissipation member |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200732503A (en) | 2007-09-01 |
| CN101016622B (en) | 2011-11-23 |
| TWI344997B (en) | 2011-07-11 |
| KR100738873B1 (en) | 2007-07-12 |
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