23303pif 九、發明說明： 【發明所屬之技術領域】 本發明涉及-制於平板顯示㈣化學氣相沉積設 備，且更具體地說’涉及-種用於平板顯示器的化學氣相 沉積設備，其中在相對較短時間内將基座溫度强行冷却到 適當水平’歧得用於維護/修理設備的料時間减少。因 此’改進了生産率’並限制了過程損失的産生。 【先前技術】 平板顯示器已廣泛用於例如個人便携式終端、電視機 和計异機監視器的產品。平板顯示器的類型是多種多樣 ^例如陰極射線管（Cath〇deraytube，CRT)、液晶顯示 裔（hqmd crystal display, LCD )、電襞顯示面板（咖賺 御㈣咖）和有機發光二極管（〇啊ic light emitting diode, Oled)。 所述LCD是-種褒f，其使用某種光控開關，通過在 兩片較_上與下麵絲之間注㈣爲賴與液態之間 的^間材料的液晶’並使用上與下玻璃基板的電極之間的 迅壓差來改’交液晶分子的定向（〇rientati〇n)，而顯示字符或 圖像前叙㈣從電衫品（例如電子手錶、電 子' f視機和膝上型計算機）到飛機的速度操 作系統。 —、電視機具有20到3〇英寸的尺寸且監視器具有小於17 ^寸的尺寸爲主流。然而，最近越來越偏愛具有4〇 英寸或更大尺寸的電視機和具有20英寸或更大尺寸的計 1344997 23303pif 异機監視器。 ·- >、因此，LCD製造商已嘗試生産更大的破璃基板。目 前’進行許多研究來針對具有l95〇x225〇mrn或ι87〇χ22〇〇 mm尺寸的第7代産品或具有216〇χ246〇 mm或更大尺寸 的第8代産品增加玻璃基板的尺寸。 、 主要通過TFT過程（其中重複沉積、微影和蝕刻）、 單兀(cell)過程（其中組裝著上和下玻璃基板）和用於完成 LCD的模組過程來製造LCD。 在作爲許多過程之一的化學氣相沉積過程中，由於外 部高頻功率而處於電漿狀態下的具有高能量的矽基成分離 子從氣體分配板注射穿過電極且沉積在玻璃基板上。所述 過程在腔室中執行。 如將稍後描述者，在用於執行化學氣相沉積過程的腔 室的下部區域中提供基座（在所述基座上加载經受沉積的 玻璃基板），且在腔室的上部區域中提供電極。當將玻瑀 基板加載在基座的上表面上時，將基座加熱到約4〇〇它的 溫度。接著，基座上升以將玻璃基板定位在靠近位於電極 下方的氣體分配板處。接著，通過電極來施加電力，通過 使用作爲絕緣構件的特富龍（Teflon)使所述電極與腔塞 絕緣。當將矽基成分離子注射穿過具有許多小孔的氣體分 配板時’相對於玻璃基板來執行沉積過程。 & 在重複相對於玻璃基板的沉積過程之後，腔室中的各 種部件（包含腔室的周圍結構）需要維護和修理工作。: 被加熱到約400°C的基座的溫度降低到i〇〇〇C以下且將腔 1344997 23303pif 室暴露到空氣中之後，執行維護和修理工作。 ，而、，在用於平板顯示器的#規化學氣相沉積設備 方' if系而要约24小時來將加熱到、約·的基座的 二低到約1GGC以下，HJ而存在—個問題，即，需要 ^药間來降錄座溫度以進行維護和_工作。這是因 局在腔▲室内部僅通過真空狀態下的輕射來進行熱傳遞。 也就疋⑤，在常規技術巾，由於爲了執行維護和修理 。工’而要約24小時來將基座溫度從約働。〇降低到約ι〇〇 C以下’因_於維護和修理1作的等待時間延長了。因 ^降低了S備的操作速率，且因而使生産率下降，從而 產生了過程損失。 【發明内容】 爲夬以上和/或其它問題’本發明提供 學氣相沉積設備，其能强行冷却基座以在相 Μ基座溫度降低到適當水平，以便可减少用 修理工作的等待時間，可改進設備的操作速率和 其生産率，且可防止過程損失的産生。 借提：一種用於平板顯示器的化學氣相沉積設 備，其可减少由於快逮熱量耗散而對基座造成的衝擊，且 防止由t溫度的突發性不平衡而在基座中產生裂縫。 „明的—方面，—種用於平板顯示器的化學氣 =r ’在所述腔室中執行平板顯示器的 4，、’、基座，其安裝在腔室中，能夠提升且具有上表 面所迷上表面上加載平板顯示器；以及至少-個冷却 . 23303pif 塊，其提供在所述腔至的底部表面上，以在所述基座下降 時接觸基座，且冷却在沉積過程期間被加熱的基座。 在基座下降並接觸冷却塊之前，用氫氣和氦氣中的任 者來填充腔室，所述氧體逐漸降低基座的溫度，以防止 基座由於接觸冷却塊而快速冷却。 所述基座包括：基板加載部分，其水平地配置在腔室 中亚支撑平錢TF器；以及支柱，其上端固定在所述基板BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flat panel display (IV) chemical vapor deposition apparatus, and more particularly to a chemical vapor deposition apparatus for a flat panel display, wherein The base temperature is forcibly cooled to an appropriate level in a relatively short period of time 'the time required for maintenance/repair equipment is reduced. Therefore, 'productivity is improved' and the generation of process losses is limited. [Prior Art] Flat panel displays have been widely used for products such as personal portable terminals, televisions, and computer monitors. The types of flat panel displays are various, such as cathode ray tube (CRT), hqmd crystal display (LCD), electric display panel (CaiYu (4) coffee) and organic light-emitting diodes (〇 ic) Light emitting diode, Oled). The LCD is a kind of 褒f, which uses a kind of light control switch, by injecting (4) between two sheets of upper and lower wires as the liquid crystal of the material between the liquid and the liquid, and using the upper and lower glass. The difference in the pressure between the electrodes of the substrate changes the orientation of the liquid crystal molecules (〇rientati〇n), while displaying the characters or images (4) from the electric shirts (such as electronic watches, electronic 'f cameras and laptops Computer) to the speed of the aircraft operating system. - The television has a size of 20 to 3 inches and the monitor has a size of less than 17 inches. However, television sets having a size of 4 inches or larger and a 1344997 23303pif heterogeneous monitor having a size of 20 inches or more have recently become more and more popular. ·- > Therefore, LCD manufacturers have tried to produce larger glass substrates. At present, many studies have been conducted to increase the size of a glass substrate for a 7th generation product having a size of l95〇x225〇mrn or ι87〇χ22〇〇 mm or an 8th generation product having a size of 216〇χ246〇 mm or more. The LCD is manufactured mainly by a TFT process in which deposition, lithography, and etching are repeated, a cell process in which upper and lower glass substrates are assembled, and a module process for completing the LCD. In the chemical vapor deposition process, which is one of many processes, a high-energy sulfhydryl-separating separator in a plasma state due to external high-frequency power is injected from the gas distribution plate through the electrode and deposited on the glass substrate. The process is performed in a chamber. As will be described later, a susceptor is provided in a lower region of a chamber for performing a chemical vapor deposition process on which a glass substrate subjected to deposition is loaded, and is provided in an upper region of the chamber electrode. When the glass substrate is loaded on the upper surface of the susceptor, the susceptor is heated to a temperature of about 4 Torr. Next, the susceptor is raised to position the glass substrate near the gas distribution plate located below the electrode. Next, electric power was applied through the electrodes, and the electrodes were insulated from the cavity plug by using Teflon as an insulating member. The deposition process is performed with respect to the glass substrate when the sulfhydryl component ions are injected through the gas distribution plate having a plurality of small holes. & After repeating the deposition process with respect to the glass substrate, various components in the chamber, including the surrounding structure of the chamber, require maintenance and repair work. : Maintenance and repair work is performed after the temperature of the susceptor heated to about 400 ° C is lowered below i 〇〇〇 C and the chamber 1344997 23303 pif chamber is exposed to the air. And, in the case of a flat-panel display, the chemical vapor deposition equipment will take about 24 hours to heat up to about 2 GGC of the susceptor, and HJ exists. That is, it is necessary to lower the temperature of the seat for maintenance and work. This is because the heat transfer is carried out only by the light in the vacuum state inside the chamber ▲. Also 疋 5, in conventional technical towels, due to the maintenance and repairs performed. It takes about 24 hours to bring the susceptor temperature from about 働. 〇 Reduced to about 〇〇 〇〇 C or less 'The waiting time for maintenance and repair 1 has been extended. Since the operating rate of the S-sampling is lowered, and thus the productivity is lowered, process loss is caused. SUMMARY OF THE INVENTION The present invention provides a vapor deposition apparatus capable of forcibly cooling a susceptor to reduce the temperature of the phase susceptor to an appropriate level so as to reduce the waiting time for repair work, The operating rate of the device and its productivity can be improved, and the generation of process losses can be prevented. Borrowing: A chemical vapor deposition apparatus for flat panel displays that reduces the impact on the susceptor due to rapid heat dissipation and prevents cracks in the susceptor caused by sudden imbalance of temperature t . „明—a chemical gas for a flat panel display=r′ performs a flat panel display 4, ', a pedestal in the chamber, which is mounted in the chamber, can be lifted and has an upper surface Loading the flat panel display on the fascinating surface; and at least one cooling. 23303 pif block provided on the bottom surface of the cavity to contact the pedestal as the pedestal descends, and cooling is heated during the deposition process The chamber is filled with either hydrogen or helium before the susceptor descends and contacts the cooling block, which gradually lowers the temperature of the susceptor to prevent rapid cooling of the susceptor due to contact with the cooling block. The susceptor includes: a substrate loading portion disposed horizontally in the chamber to support the flat money TF device; and a pillar having an upper end fixed to the substrate
加載部分的中心處，且其下端穿過腔室的下壁以配置在腔 室外部’其情述冷却塊的上表面實質上平行於基板加載 部分的下表面’以使得冷却塊與基板加载部分的下表面具 有表面接觸。 所述冷却塊包括：主體部分 一，"开设坰尸/Γ迷腔室的底到 表面；以及冷却線路，其提供麵述主體部分中，預定纪 冷却劑通過所述冷却線路進行循環。 在腔室的賴秘理卫作_， 却線路中進行循環。 Id牡所a center of the loading portion, and a lower end thereof passes through a lower wall of the chamber to be disposed outside the chamber. The upper surface of the cooling block is substantially parallel to the lower surface of the substrate loading portion to cause the cooling block and the substrate loading portion The lower surface has surface contact. The cooling block includes a body portion, a "bottom-to-surface of the zombie/chamber chamber, and a cooling circuit that provides a predetermined body portion through which the coolant is circulated. In the chamber, the Guardian _, but in the line to circulate. Id Mushy
所述冷却劑是水和氮氣中的任—者。 所述設備進—步包括支撑基朗基座支撑件，立中冷 却塊提供在關於所述基鼓持件的相對側處。’、 所述冷却塊堆叠在腔室的底部 diSplay，U：D)的大玻璃基板。日日々不5 (1咖id — ^3〇3pjf 為讓本發明之上述和_其他目的 '特徵和優點能更明顯 董，下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 ϋ 【實施方式】 參考用於說明本發明優選實施例的附圖是爲了充分理 罕本發明、其優點和通過實施本發明而實現的目的。 下文中，將通過參考附圖來解釋本發明的優選實施例 =描述本發明。附圖中的類似參考元件符號是指類似 與々二…恨像丰發明一貫施例的用於平板顯示 没備的結構。參考圖卜用於平板顯示器的化 月I，相〉儿積没備1包含：腔室10 ;電極16，其提供在所诚 的上部中並向經受沉積的平板顯示器G發射預定 述基1其配置在電極16下方且在所 40,心:”器G;以及多個基座支撑件 /、在基座30下方支撑基座3〇。 從外部來密封該腔室〗〇的外 s 〇 ^ ^10 填充脒1 月丨王乳體（例如He或Ar) 石夕基成^離子曰^積^間S ’以不影響石夕基成分離子，所述 土取刀離子是由電極ί6產生 夕^中形成如術，使得平板顯示ΐ材^ 1在1室= ]0a。儘管未給干，徊所、。。0 了牙過所述開口 地打開和= 開口10a由門（未圖示）選擇性 在腔室】〇的底部表面上提供氣體擴散面极】2，所述 1344997 23303pif 氣體擴散面板12用於將腔-室i〇的沉積空間$中存在的炅 體擴散回到沉積空間S。在腔室10的底部表面的中心 處形成通孔l〇b，基座30的支柱32穿過所述通孔为 所述通孔10b周圍形成多個額外通孔10c，基座支撑件$ 的杆部分42穿過所述多個額外通孔i〇c。 + 在腔室10的上部中提供電極16。在所述電極16下方 提供氣體分配板17 ’所述氣體分配板具有多個小孔且通過 所述氣體分配板注射石夕基成分離子。以預定間隙（例如，° 幾十毫米（mm))平行於基座30的基板加載部分31來 配置所述氣體分配板17。 如上所述，平板顯示器G可以是陰極射線管（cath〇de ray tube, CRT )、液晶顯示^§( crystal display, LCD )、 電漿顯示面板（plasma display panel，PDP)和有機發光二 極管（organic light emitting diode，OLED)中的任一者。然 而，在本實施例中，用於LCD的大玻璃基板g被當作平板 顯示器G。詞“大”意指如上所述的第7或第8代産品的 尺寸。在以下描述中，平板顯示器G被描述爲玻璃基板G。 在腔至10外部上方提供遠程(rem〇te)電漿體18，其供 應預定之清洗氣體以移除腔室中存在的雜質。在遠程電 漿體18周圍安裝高頻功率單元2〇。所述高頻功率單元2〇 通過連接線22而連接到電極16。在電極16與腔室10的 外土之間&供纟巴緣體26 ’以防止電極16與腔室1 〇的外壁 之間發生電性連接，當電極16直接接觸腔室1〇的外壁時 會發生所述電性連接。可通過使用（例如）特富龍(Teflon) 1344997 23303pif 來製造絕緣體26。在氣體分配板17與電極16之間形成廢 氣緩衝空間部分19。 * 基座30包含：基板加載部分31，其水平地配置在腔 室1〇的沉積空間S中，以支撑加载在其上的破璃基板 以及支柱32，其上端固定在基板加載部分31的中心部分 處’且其下端通過穿過通孔l〇b而配置在腔室1〇外部。將 基板加載部分31的上表面處理爲表面板，使得可精確地將 玻璃基板G加載在水平狀態中。在基板加載部分31内部 安裝加熱器（未圖示），以將基板加載部分31加埶 ° 4〇〇°c的預定之沉積溫度。 ” 基座30在腔室10的沉積空間S中上升和下降。也就 是說，當加載玻璃基板G時，基座30被配置在腔室1〇的 底部表面中。當加載玻璃基板G且正執行過程時，所述基 座30上升以使得玻璃基板G位於靠近氣體分配板17處= 出於此目的，在基座30的支柱32處提供用於提升基座3〇 的提升模組36。所述提升模組36使基座3〇與基座支撑件 40 —起被提升。 菖基座30被k升模組36提升時，在基座的支柱 32與通孔l〇b之間必須不産生任何空間。因此，在通孔1〇b 周圍提供用以包圍支柱32外部的波紋管34。所述波紋管 34在基座30下降時延展，且在基座3〇上升時收縮以防止 在支柱32與通孔10b之間産生空間。 在基板加載部分31處提供多個起模頂杆，所述起 模頂杆穩定地支撑被加載且被取出的玻璃基板G的下表 1344997 233〇3pif 面’並在基板加载部分31上方引導玻璃基板G。起模頂杆 %經安裝爲穿過基板加載部分31。當提升模組36以降低 基座30時，起模頂杆38的下端受腔室1〇的底部表面擠 壓，以使得起模頂杆38的上端從基板加載部分31的上表 面突出。結果，玻璃基板G與基板加載部分31分離。相 反地，g基座30上升日寸，起模頂杆38向下移動，以使得 玻璃基板G緊密接觸基板加載部分31的上表面。因此，The coolant is any of water and nitrogen. The apparatus further includes supporting a base base support member, the center block cooling block being provided at an opposite side with respect to the base drum member. The cooling block is stacked on the large glass substrate at the bottom of the chamber diSplay, U:D). The features and advantages of the above and other objects of the present invention will be more apparent, and the preferred embodiments will be described in detail below with reference to the accompanying drawings. The following is a description of the preferred embodiments of the present invention for the purpose of illustrating the invention, the advantages thereof, and the embodiments of the invention. BEST MODE FOR CARRYING OUT THE INVENTION The present invention is described in the drawings. Like reference symbol symbols in the drawings refer to structures for flat panel display similar to those of the second embodiment of the invention. The moon I, the phase 1 contains: a chamber 10; an electrode 16, which is provided in the upper portion of the body and emits a predetermined base 1 to the flat panel display G subjected to deposition, which is disposed under the electrode 16 and 40, heart: "G"; and a plurality of pedestal supports /, supporting the pedestal 3 下方 under the pedestal 30. Sealing the chamber from the outside 〗 〇 s ^ ^ ^10 Filling 脒 January 丨 King Milk (eg He or Ar) Shi Xiji into ^ ion 曰 ^ product ^ S ' does not affect the Shi Xiji component ions, the soil extraction knife ions are formed by the electrode ί6, such as the surgery, so that the flat panel shows the coffin ^ 1 in 1 room = ] 0a. Although not given dry, The opening of the tooth through the opening and the opening 10a are selectively provided on the bottom surface of the chamber by a door (not shown), the gas diffusion surface electrode 2, the 1344997 23303 pif gas diffusion panel 12 For diffusing the corpus callosum present in the deposition space $ of the cavity-chamber into the deposition space S. A through hole lb is formed at the center of the bottom surface of the chamber 10, and the struts 32 of the susceptor 30 pass through The through hole is formed with a plurality of additional through holes 10c around the through hole 10b, and the rod portion 42 of the base support member 100 passes through the plurality of additional through holes i〇c. The electrode is provided in the upper portion of the chamber 10. 16. Providing a gas distribution plate 17' under the electrode 16', the gas distribution plate having a plurality of small holes and injecting a group of ion ions through the gas distribution plate at a predetermined gap (for example, tens of millimeters (mm) The gas distribution plate 17 is disposed parallel to the substrate loading portion 31 of the susceptor 30. As described, the flat panel display G may be a cathode ray tube (CRT), a liquid crystal display (LCD), a plasma display panel (PDP), and an organic light emitting diode (organic light emitting diode). Any of the diodes, OLEDs. However, in the present embodiment, the large glass substrate g for the LCD is regarded as the flat panel display G. The word "large" means the 7th or 8th generation product as described above. The size of the flat panel display G is described as a glass substrate G in the following description. A remote remake 18 is provided above the exterior of the chamber 10 to supply a predetermined purge gas to remove impurities present in the chamber. A high frequency power unit 2 is mounted around the remote plasma 18. The high frequency power unit 2 is connected to the electrode 16 via a connection line 22. Between the electrode 16 and the outer soil of the chamber 10 & the rim flange 26' to prevent electrical connection between the electrode 16 and the outer wall of the chamber 1 ,, when the electrode 16 directly contacts the outer wall of the chamber 1 The electrical connection occurs when. The insulator 26 can be fabricated by using, for example, Teflon 1344997 23303 pif. An exhaust buffer space portion 19 is formed between the gas distribution plate 17 and the electrode 16. * The susceptor 30 includes a substrate loading portion 31 that is horizontally disposed in the deposition space S of the chamber 1 , to support the glass substrate and the struts 32 loaded thereon, the upper end of which is fixed at the center of the substrate loading portion 31 The portion is 'and its lower end is disposed outside the chamber 1〇 by passing through the through hole l〇b. The upper surface of the substrate loading portion 31 is treated as a surface plate so that the glass substrate G can be accurately loaded in a horizontal state. A heater (not shown) is mounted inside the substrate loading portion 31 to apply the substrate loading portion 31 to a predetermined deposition temperature of 〇〇 ° ° C. The susceptor 30 rises and falls in the deposition space S of the chamber 10. That is, when the glass substrate G is loaded, the susceptor 30 is disposed in the bottom surface of the chamber 1 。. When the glass substrate G is loaded and positive During the execution of the process, the susceptor 30 is raised such that the glass substrate G is located adjacent to the gas distribution plate 17 = for this purpose, a lifting module 36 for lifting the pedestal 3 提供 is provided at the struts 32 of the susceptor 30. The lifting module 36 causes the base 3〇 to be lifted together with the base support 40. When the base 30 is lifted by the k-lift module 36, it must be between the base 32 and the through hole l〇b. No space is created. Therefore, a bellows 34 for surrounding the outside of the strut 32 is provided around the through hole 1〇b. The bellows 34 is extended as the base 30 is lowered, and is contracted when the base 3 is raised to prevent A space is created between the struts 32 and the through holes 10b. A plurality of ejector pins are provided at the substrate loading portion 31, and the ejector pins stably support the following table 1344997 233 of the loaded and taken out glass substrate G 3pif face' and guide the glass substrate G above the substrate loading portion 31. In order to pass through the substrate loading portion 31. When the lifting module 36 is lowered to lower the base 30, the lower end of the ejection ram 38 is pressed by the bottom surface of the chamber 1 , so that the upper end of the ejector pin 38 is loaded from the substrate The upper surface of the portion 31 is protruded. As a result, the glass substrate G is separated from the substrate loading portion 31. Conversely, the g base 30 is lifted up, and the ejector pin 38 is moved downward so that the glass substrate G closely contacts the substrate loading portion 31. The upper surface. Therefore,
起模頂杆38在玻璃基板G與基板加載部分3丨之間形成空 間，以使得機械手（未圖示）可容易地抓住加載在基板加 載部分31上的玻璃基板g。 如上所述’根據第7或第8代技術的基座3〇相對較大 且沉重’以使得基座3Q可由於重力而下彎。在此情况下， ::=G :能因此下彎。因此’可在基座3〇的基板加 ^ 2下方提供基座支撑件4。。由於基板加載部分31 向基板G ’因而從中心支检32在徑向方向上朝The ejector pin 38 forms a space between the glass substrate G and the substrate loading portion 3A so that a robot (not shown) can easily grasp the glass substrate g loaded on the substrate loading portion 31. As described above, the pedestal 3 根据 according to the 7th or 8th generation technique is relatively large and heavy so that the susceptor 3Q can be bent by gravity. In this case, ::=G : can therefore bend down. Therefore, the susceptor support 4 can be provided under the substrate 2 of the susceptor 3 。. . Since the substrate loading portion 31 faces the substrate G', it is directed from the center check 32 in the radial direction.
愈=分"的下彎變得 提供基座支撑件40,所述基==二::外側處 止基庄30的基板加載部分31下彎。 所述基座支撑件4〇每一 靠近基板加载部分31的下表 、S、°刀41 ’其位於 行於基座30的支柱32 X处，以及杆部分42，其平 42的下端部分類似於支延，。所述杆部分 此，當提升模組36 ^升模組36中。因 36開始㈣時，基座支撑件4()隨基座％ 2J3〇3pjf 而提升。在杆部分42處形成波紋管34a。 圖2疋接觸冷却塊的基座的部分放大圖。圖3是圖2 2却塊的橫戴面圖。如上所述，當關於玻璃基板G重複 執仃沉積過程時，需要對腔室1〇進行維護和修理工作。需 要在將加熱到至少4⑻C的基座3〇的溫度降低到約1〇〇。〇 以下之後執行維護和修理工作。因此，爲了迅速執行維護 2修理工作，需要强行冷却基座30，以使得可在相對較短 時間内將基座30的溫度降低到適當溫度。冷却部分5〇用 於此目的。 蒼看圖1、2和3，冷却部分50堆叠在腔室1〇的底部 表面Π上。冷却塊5〇不能在腔室1〇的底部表面丨1的區 域中任思、移動。因此，使用螺杆或以焊接方法來將冷却塊 5〇固疋到腔室1〇的底部表面11。冷却塊50可提供爲尺寸 等於基板加載部分31的單個塊，或如圖4和5所示，提供 爲關於基板支撑件40在相對侧處的兩個塊。不管塊的數目 和尺寸’只要冷却塊50能迅速將被加熱到約4〇〇°c的基座 30的溫度降低到i〇〇°c以下，就已足夠。 參看圖3 ’冷却塊50差不多具有矩形形狀。然而，本 發明並不限於此。由於當冷却塊50在較大區域中與基板加 載σ卩刀31的下表面具有表面接觸時’冷却效率得以改進， 因而冷却塊50的至少上表面優選平行於所述基板加載部 分31的下表面而形成。 冷却塊50包括主體部分51和提供在所述主體部分51 中的冷却線路53，預定的冷却劑在所述冷却線路53中進 233〇3pif 路53可在主體部分51中配1爲多個線路， 單線路。者主^刀51的側面來配置冷却線路53的 冷却線路53被提供爲管，以使得、八 :二::劑可以是水冷却方二 具有相二 却方法中主要使用在氣體間 氣的任何氣體;:=;?氧。然而’熱傳遞性類似於氮 過冷=^353進兩Τ要彼此分離，以使冷却劑通 (未圖示)V供應冷却剩的冷却劑供應源 的-端 排出經循環的冷却劑。在·^要/、有結構來 所周知的結!！ 的坪細描述’但如需要可採用任何衆 理工所达’當基座30下降以執行腔室10的維護和佟 基座冷却線路53 #環的冷却劑通過接觸來冷却 ί)(相對如:i而’、當破加熱到4〇〇r的基座3〇接觸冷却塊 5敎旦士又々的冷却劑在所述冷却塊5〇巾流動）以快速耗 快速鮮耗散可對基座3G造成衝擊或由於溫度 的大發性不平衡而在基座30中産生裂缝。 因此，基座30逐漸下降以賴維護和修理工作且# 〇相距預定的間隙，用氫氣和氦氣中的任-者來填^ 1344997 23303pif 腔室10的内部，以使得通過氣體熱傳遞來逐漸冷却基座 30。通過孔24而將氫氣或氦氣注射到腔室10中，所述孔 24形成在電極16的中心部分處。在冷却到一定程度之後， 通過直接接觸在沒有熱應力的情况下快速冷却基座3〇。 在如上配置的用於平板顯示器的化學氣相沉積設備1 的操作和功能中，首先，將由機械手移動的經受沉積的玻 璃基板G以一種狀態配置在基座3〇的基板加载部分31上 方，在所述狀態中，由該提升模組36將基座3〇和基座支 撑件40向下移動到腔室1 〇的下部。 由方；起模頂杆38的上端從基板加載部分31的上表面 突出到預定高度，因而機械手將玻璃基板G放置在起模頂 杆38上且接著縮回。當縮回機械手時，腔室1〇的内部維 持在真空狀態且同時用沉積所需的惰性氣體或來進 行填充。 接著，對於沉積過程，操作該提升模組36以使某座 3〇，基座支撐件40 —起上升。接著，起模頂杆％下^且 玻璃基板G被加載，同時緊密接觸基板加載部分的上 表面。當基座30大致上升到圖1所示的位置時，停止該提 升模組36的操作，且玻璃基板G位於電極16正;方:此 刻’基座30被加熱到約4〇〇〇C。 接著，通過與絕緣體26絕緣的電極16來施加带力 通過具有大量小孔的氣體分配板17來發射矽：：二丄 基成分離子達到玻璃基板G處，以便在玻;;基板 23303pif ^在凡成針對玻璃基板G的沉積過程之後，爲了進行腔 至1〇的維護和修理工作，基座30下降。用氫氣和氦氣中 的任者來填充腔室10，且冷却劑在冷却塊50的冷却線 路53中進行循環。當基座30下降且基板加載部分31的下 表面接觸冷却塊50的上表面時，通過冷却塊50的主體部 分5丨來傳遞基座3〇約4〇(rc的熱量且所述熱量耗散到通 過冷却線路53進行循環的冷却劑。 通過這些一連串的熱量傳遞過程，可將基座30的基板 加載部分31冷却到1〇〇。(：以下，100t：以下是所需的恰當 /Jm'度。與常規技術相比’這樣做可極大地縮短處理時間。 當將基座30的溫度降低到100°c以下時，將腔室的内 部暴露到外部空氣，且執行維護和修理工作。 根據本實施例’由於可在相對較短時間内將基座3〇 强行冷却到恰當溫度，因而可减少維護和修理工作的等待 時間。因此，可改進設備的操作速率和生産率，且可防止 過程損失的產生。 s圖5是根據本發明又一實施例的用於平板顯示器的化 學氣相沉積設備的部分放大圖。在圖丨的先前實施例中， 在腔室10的底部表面11上堆叠冷却塊50。然而，在本實 施例中，凹槽11a形成在腔室10的底部表面u中’且冷 却塊50部分插在所述凹槽lla中。圖5的本實施例可充^ 地産生本發明的效果。同樣，冷却塊5〇能夠被完全掩埋， 以使得冷却塊50的上表面與腔室1〇的底部表面u位於相 同平面上。 1344997 233〇3pif 在上述實施例·中―’冷却塊5〇的尺寸類似於或略微小於 基板加載部分31。然而，可將冷却塊5〇a製作成較寸 且提供在腔至10的底部表面丨丨上。在此情况下，安裝許 多冷却塊5〇a。另外，提供在冷却塊伽中的冷却線路53 ‘在主體部分51中可以是單一線路或配置成z形 所示）。 儘管已參考本發明優選實施例特別地繪示並描述了本 發明，、但所屬領域的技術人員將瞭解，在不脫離由所附權 利要求書界定的本發明精神和範圍的情况下，可在其中做 _ 出形式和細節上的各種變化。 〃 如上所述’根據本發明，由於强行冷却基座以在相對 較短時間⑽基座溫度降低到恰當水平，因而可减少設備 維護和修理時間的等待時間。因此，改進了設備的掉作速 率和其生産率，且防止了過程損失的產生。同樣，可减少 由於快速熱量耗散而對基座造成的衝擊，且可防止由於溫 度的大發性不平衡而在基座中産生裂縫。 • 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍内，當可作些許之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 ^ 【圖式簡單說明】 圖1 S兒明根據本發明一貫施例的用於平板顯示器的化 學氣相沉積設備的結構。 圖2是接觸冷却塊的基座的部分放大圖。 18 1344997 23303pif — 圖3是圖2的冷却塊的橫截面圖。 · 圖4說明根據本發明另一實施例的用於平板顯示器的 化學氣相沉積設備的結構。 圖5是根據本發明又一實施例的用於平板顯示器的化 學氣相沉積設備的部分放大圖。 圖6是根據本發明再一實施例的用於平板顯示器的化 學氣相沉積設備的透視圖。 【主要元件符號說明】The lower bend of the lower portion becomes the susceptor support member 40, and the base == two: the outer side stops the substrate loading portion 31 of the base 30 to be bent. The pedestal support 4 〇 each of the lower table adjacent to the substrate loading portion 31, the S, the knives 41' are located at the struts 32 X of the pedestal 30, and the rod portion 42 whose lower end portion of the flat 42 is similar In support, The rod portion is, in the lift module 36, the lift module 36. When the start (36) of 36, the base support 4() is lifted with the base % 2J3 〇 3pjf. A bellows 34a is formed at the rod portion 42. Figure 2 is a partial enlarged view of the base of the contact cooling block. Figure 3 is a cross-sectional view of the block of Figure 2-2. As described above, when the deposition process is repeatedly performed with respect to the glass substrate G, it is necessary to perform maintenance and repair work on the chamber 1〇. It is desirable to reduce the temperature of the susceptor 3 crucible heated to at least 4 (8) C to about 1 Torr.进行 Perform maintenance and repair work afterwards. Therefore, in order to perform the maintenance 2 repair work promptly, it is necessary to forcibly cool the susceptor 30 so that the temperature of the susceptor 30 can be lowered to an appropriate temperature in a relatively short time. The cooling section 5 is used for this purpose. Referring to Figures 1, 2 and 3, the cooling portion 50 is stacked on the bottom surface of the chamber 1〇. The cooling block 5〇 cannot be moved or moved in the area of the bottom surface 丨1 of the chamber 1〇. Therefore, the cooling block 5 is fixed to the bottom surface 11 of the chamber 1 by using a screw or by welding. The cooling block 50 can be provided as a single block having a size equal to the substrate loading portion 31, or as shown in Figures 4 and 5, as two blocks at opposite sides with respect to the substrate support 40. Regardless of the number and size of the blocks, it suffices that the cooling block 50 can rapidly lower the temperature of the susceptor 30 heated to about 4 〇〇 ° C below i 〇〇 °c. Referring to Figure 3, the cooling block 50 has a substantially rectangular shape. However, the invention is not limited thereto. Since the cooling efficiency is improved when the cooling block 50 has surface contact with the lower surface of the substrate loading σ blade 31 in a larger region, at least the upper surface of the cooling block 50 is preferably parallel to the lower surface of the substrate loading portion 31. And formed. The cooling block 50 includes a main body portion 51 and a cooling line 53 provided in the main body portion 51, and a predetermined coolant is introduced into the cooling line 53 by a 233〇3pif path 53 which can be provided with a plurality of lines in the main body portion 51. , single line. The cooling line 53 of the side of the main blade 51 for arranging the cooling line 53 is provided as a tube, so that the eight: two:: agent may be water-cooled, and the second side of the method is mainly used in the gas of the gas. Gas;:=;? Oxygen. However, the heat transferability is similar to that of nitrogen supercooling = 353 353, so that the coolant is discharged (not shown) V to supply the end of the cooled coolant supply source to discharge the circulated coolant. We have a well-known knot! The pings are described in detail 'but any utility can be used as needed' when the pedestal 30 is lowered to perform maintenance of the chamber 10 and the 佟 pedestal cooling line 53 # coolant is cooled by contact ί) (relative to: i, 'When the base 3 is heated to 4 〇〇r, the cooling block is contacted with the cooling block 5, and the coolant is flowing in the cooling block 5 to quickly dissipate the base. The 3G causes an impact or a crack in the susceptor 30 due to a large unbalance of temperature. Therefore, the susceptor 30 is gradually lowered to depend on the maintenance and repair work and # 〇 is spaced apart from the predetermined gap, and the inside of the 1344997 23303 pif chamber 10 is filled with any of hydrogen gas and helium gas to gradually pass the gas heat transfer. The susceptor 30 is cooled. Hydrogen or helium gas is injected into the chamber 10 through the holes 24 formed at the central portion of the electrode 16. After cooling to a certain extent, the susceptor 3 is rapidly cooled by direct contact without thermal stress. In the operation and function of the chemical vapor deposition apparatus 1 for a flat panel display configured as above, first, the glass substrate G subjected to deposition moved by the robot is disposed in a state above the substrate loading portion 31 of the susceptor 3〇, In this state, the base 3 and the base support 40 are moved downward by the lift module 36 to the lower portion of the chamber 1 . The upper end of the ejector pin 38 protrudes from the upper surface of the substrate loading portion 31 to a predetermined height, so that the robot places the glass substrate G on the ejector pin 38 and then retracts. When the robot is retracted, the interior of the chamber 1〇 is maintained in a vacuum state and simultaneously filled with an inert gas required for deposition. Next, for the deposition process, the lift module 36 is operated to raise a certain seat, and the base support 40 rises. Next, the ejector pin is lowered and the glass substrate G is loaded while closely contacting the upper surface of the substrate loading portion. When the susceptor 30 is substantially raised to the position shown in Figure 1, the operation of the lift module 36 is stopped and the glass substrate G is positioned positively at the electrode 16; at this point the susceptor 30 is heated to about 4 〇〇〇C. Next, a force applied to the gas distribution plate 17 having a large number of small holes by the electrode 16 insulated from the insulator 26 is used to emit 矽:: a bismuth-based component ion reaches the glass substrate G so as to be in the glass; the substrate 23303pif ^ After the deposition process for the glass substrate G, the susceptor 30 is lowered for the maintenance and repair work of the cavity to 1 。. The chamber 10 is filled with any of hydrogen and helium, and the coolant is circulated in the cooling line 53 of the cooling block 50. When the susceptor 30 is lowered and the lower surface of the substrate loading portion 31 contacts the upper surface of the cooling block 50, the susceptor 3 传递 is transferred through the body portion 5 冷却 of the cooling block 50 and the heat is dissipated. The coolant is circulated through the cooling line 53. Through these series of heat transfer processes, the substrate loading portion 31 of the susceptor 30 can be cooled to 1 〇〇. (: hereinafter, 100t: the following is the appropriate / Jm' required) This can greatly shorten the processing time compared to the conventional technology. When the temperature of the susceptor 30 is lowered below 100 ° C, the inside of the chamber is exposed to the outside air, and maintenance and repair work is performed. In the present embodiment, since the base 3 can be forcibly cooled to an appropriate temperature in a relatively short time, the waiting time for maintenance and repair work can be reduced. Therefore, the operation rate and productivity of the apparatus can be improved, and the process can be prevented. </ RTI> Figure 5 is a partially enlarged view of a chemical vapor deposition apparatus for a flat panel display according to still another embodiment of the present invention. In the previous embodiment of the figure, at the bottom of the chamber 10 The cooling block 50 is stacked on the face 11. However, in the present embodiment, the groove 11a is formed in the bottom surface u of the chamber 10 and the cooling block 50 is partially inserted in the groove 11a. This embodiment of Fig. 5 The effect of the present invention can be rectified. Similarly, the cooling block 5 can be completely buried so that the upper surface of the cooling block 50 is on the same plane as the bottom surface u of the chamber 1〇. 1344997 233〇3pif In the above implementation The size of the "cooling block 5" is similar to or slightly smaller than the substrate loading portion 31. However, the cooling block 5A can be made in a relatively small size and provided on the bottom surface of the cavity to 10. In this case Next, a plurality of cooling blocks 5A are installed. In addition, the cooling line 53' provided in the cooling block gamma may be a single line or configured in a z-shape in the body portion 51. Although reference has been made to the preferred embodiment of the present invention. The present invention has been illustrated and described, but it will be understood by those of ordinary skill in the art that the form and details thereof can be made without departing from the spirit and scope of the invention as defined by the appended claims. Various changes. As described above, according to the present invention, since the base is forcibly cooled to lower the temperature of the susceptor to an appropriate level in a relatively short time (10), the waiting time for equipment maintenance and repair time can be reduced. Therefore, the drop rate of the device is improved and Its productivity and prevention of process loss. Similarly, the impact on the susceptor due to rapid heat dissipation can be reduced, and cracks can be prevented from occurring in the susceptor due to the large temperature imbalance of temperature. The invention has been disclosed in the above preferred embodiments. However, it is not intended to limit the invention, and the invention may be modified and modified without departing from the spirit and scope of the invention. The scope is defined by the scope of the appended claims. ^ [Simple Description of the Drawings] Fig. 1 shows the structure of a chemical vapor deposition apparatus for a flat panel display according to a consistent embodiment of the present invention. Figure 2 is a partial enlarged view of the base contacting the cooling block. 18 1344997 23303pif — Figure 3 is a cross-sectional view of the cooling block of Figure 2. Fig. 4 illustrates the structure of a chemical vapor deposition apparatus for a flat panel display according to another embodiment of the present invention. Figure 5 is a partially enlarged view of a chemical vapor deposition apparatus for a flat panel display according to still another embodiment of the present invention. Figure 6 is a perspective view of a chemical vapor deposition apparatus for a flat panel display according to still another embodiment of the present invention. [Main component symbol description]
10 腔室 11 底部表面 17 氣體分配板 26 絕緣主體 30 基座 31 基板加載部分 40 基座支撑件 50 冷却塊 51 主體部分 53 冷却線路 1910 Chamber 11 Bottom surface 17 Gas distribution plate 26 Insulation body 30 Base 31 Substrate loading section 40 Base support 50 Cooling block 51 Main part 53 Cooling circuit 19