TW201515090A - Substrate processing method and substrate processing device - Google Patents

Substrate processing method and substrate processing device Download PDF

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TW201515090A
TW201515090A TW103119554A TW103119554A TW201515090A TW 201515090 A TW201515090 A TW 201515090A TW 103119554 A TW103119554 A TW 103119554A TW 103119554 A TW103119554 A TW 103119554A TW 201515090 A TW201515090 A TW 201515090A
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substrate
gas
pressure
heat transfer
processing
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TWI631613B (en
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Motoki Fujinaga
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Tokyo Electron Ltd
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Abstract

The invention provides a substrate processing method and a substrate processing device. In a process for performing substrate temperature control by means of heat conducting gas, processing uniformity in a substrate surface is sustained. The substrate processing method comprises the steps of: a step of adjusting the pressure in a processing container to a vacuum-state pressure P0; a step of introducing voltage adjusting gas into the processing container (1) and adjusting the pressure in the processing container (1) to a pressure P1 which is higher than the pressure P0 on condition that a substrate S departs from the upper surface of a carrying platform (5) by means of a lifting pin (85); a step of carrying the substrate on the carrying platform (5) through dropping the lifting pin (85); a step of exhausting the pressure adjusting gas out of the processing container (1); and a step of maintaining the pressure of a heat conducting space to P2 and introducing processing gas into the processing container, thereby processing the substrate S.

Description

基板處理方法及基板處理裝置 Substrate processing method and substrate processing device

本發明，係關於對基板進行預定處理之基板處理方法及使用其之基板處理裝置。 The present invention relates to a substrate processing method for performing predetermined processing on a substrate, and a substrate processing apparatus using the same.

在平板顯示器(FPD)的製造工程中，對作為被處理體之基板施予電漿蝕刻處理。電漿蝕刻處理，係在例如配置了一對平行平板電極(上部及下部電極)的處理容器內，將基板載置於具有作為下部電極功能的載置台，對電極的至少一方施加高頻電力，而在電極間形成高頻電場。藉由該高頻電場形成處理氣體之電漿，藉由該電漿對基板上的材料膜進行蝕刻處理。 In the manufacturing process of a flat panel display (FPD), a plasma etching treatment is applied to a substrate as a target object. The plasma etching treatment is performed, for example, in a processing container in which a pair of parallel plate electrodes (upper and lower electrodes) are disposed, and the substrate is placed on a mounting table having a function as a lower electrode, and high-frequency power is applied to at least one of the electrodes. A high frequency electric field is formed between the electrodes. The plasma of the processing gas is formed by the high frequency electric field, and the material film on the substrate is etched by the plasma.

在電漿蝕刻處理期間，係朝向被載置於載置台之基板的背面側，供給例如He氣體等的傳熱氣體，且進行控制基板溫度(例如，專利文獻1、2)。傳熱氣體，係從被設置於載置有基板之載置台的複數個氣孔予以供給。 During the plasma etching process, a heat transfer gas such as He gas is supplied to the back side of the substrate placed on the mounting table, and the substrate temperature is controlled (for example, Patent Documents 1 and 2). The heat transfer gas is supplied from a plurality of pores provided in the mounting table on which the substrate is placed.

近年來，FPD用之玻璃基板較大型化，其一邊的長度亦有超過2m者。另一方面，形成於基板上的元 件，係逐年微細化發展。如此一來，因基板之大型化與元件之微細化發展，會發生如下述之缺陷。 In recent years, the glass substrate for FPD has been made larger, and the length of one side thereof has exceeded 2 m. On the other hand, the element formed on the substrate Pieces are developed year by year. As a result, due to the increase in the size of the substrate and the miniaturization of the components, the following defects occur.

首先，伴隨著基板大面積化之情形，相較於 以往，變得更難以進行傳熱氣體之溫度控制，且易在基板面內產生溫度之不均勻。當在基板面內溫度不均勻的狀態下進行蝕刻時，難以在基板面內進行均勻的蝕刻處理。為了在基板面內使溫度均勻化，而考慮增加載置台的氣孔，從而提高傳熱氣體供給到基板之背面側的效率。但是，在接近氣孔之部位的基板表面中，有產生蝕刻不均勻的情形。其原因，係因為在從氣孔所噴射之傳熱氣體直接擊中的區域與除此之外的區域，會對基板表面側之蝕刻速率或蝕刻精度產生差異。因此，當使氣孔之個數無效益地增加時，反而有在基板面內難以實現處理之均勻化之虞。而且，蝕刻不均勻對產品之良率的影響，係元件越微細越大。從像這樣的理由可知，對於藉由以使傳熱氣體用之氣孔個數增加的方式予以改善基板面內之溫度控制效率的方法存有限制。 First, with the large area of the substrate, compared to In the past, it has become more difficult to control the temperature of the heat transfer gas, and it is easy to cause temperature unevenness in the surface of the substrate. When etching is performed in a state where the temperature in the surface of the substrate is not uniform, it is difficult to perform uniform etching treatment in the surface of the substrate. In order to make the temperature uniform in the surface of the substrate, it is conceivable to increase the efficiency of the supply of the heat transfer gas to the back side of the substrate by increasing the pores of the mounting table. However, in the surface of the substrate close to the pores, uneven etching occurs. The reason for this is that the etching rate or the etching precision of the substrate surface side is different in the region directly hit by the heat transfer gas ejected from the pores and the other regions. Therefore, when the number of pores is increased unproductively, it is difficult to achieve uniformization of the treatment in the surface of the substrate. Moreover, the effect of uneven etching on the yield of the product is that the components are finer and larger. From such a reason, it is understood that there is a limitation in the method of improving the temperature control efficiency in the surface of the substrate by increasing the number of pores for the heat transfer gas.

如上述，若考慮對元件之影響，則傳熱氣體 用之氣孔的個數少為較佳。但是，當基板為大型時，由於直至將傳熱氣體均等地填充於基板之背面側會耗費時間，因此，相較於現狀，在背冷式用氣孔的個數減少時，有使蝕刻程序之生產率大幅下降之擔憂。因此，當減少氣孔之個數時，則將越來越難以在大型化發展之基板面內進行均勻的溫度控制。 As mentioned above, if the influence on the component is considered, the heat transfer gas The number of pores used is preferably small. However, when the substrate is large, it takes time until the heat transfer gas is uniformly filled on the back side of the substrate. Therefore, compared with the current state, when the number of back-cooling pores is reduced, there is an etching procedure. Concerns about a sharp drop in productivity. Therefore, when the number of pores is reduced, it becomes more and more difficult to perform uniform temperature control in the substrate surface of the large-scale development.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]國際公開WO2002/065532號公報(圖1等) [Patent Document 1] International Publication No. WO2002/065532 (Fig. 1, etc.)

本發明，係有鑑於上述實情所進行研發者，其第1目的，係在使用傳熱氣體進行基板之溫度控制的程序中，維持基板面內之處理的均勻性。又，本發明之第2目的，係在使用傳熱氣體進行基板之溫度控制的基板處理裝置中，儘可能減少背冷式用氣孔的個數。 The present invention has been made in view of the above circumstances, and a first object thereof is to maintain uniformity of processing in a surface of a substrate in a program for controlling temperature of a substrate using a heat transfer gas. Further, a second object of the present invention is to reduce the number of back-cooling type pores as much as possible in a substrate processing apparatus that performs temperature control of a substrate using a heat transfer gas.

本發明之基板處理方法，係一邊對基板之背面側供給傳熱氣體一邊進行處理的基板處理方法。該處理方法，係使用具備有處理容器、載置台、支撐構件、第1氣體供給路徑、第2氣體供給路徑、流量調節裝置、壓力檢測裝置、排氣路徑、閥及排氣裝置的處理裝置予以進行，該處理容器係收容被處理體且可將內部保持為真空，該載置台係在前述處理容器內載置前述基板，且具有朝向前述基板之背面側噴射前述傳熱氣體的複數個氣孔，該支 撐構件係被設置成可對前述載置台之上面突出/沒入進行位移，且將前述基板支撐於使脫離前述載置台之上面的位置，該第1氣體供給路徑係對前述處理容器內供給氣體，該第2氣體供給路徑係連通於前述氣孔，該流量調節裝置係被設於前述第1氣體供給路徑，且調節前述氣體的供給流量，該壓力檢測裝置係檢測前述處理容器內的壓力，該排氣路徑係被連接於前述處理容器，該閥係可變地調節前述排氣路徑之傳導度，該排氣裝置係被連接於前述排氣路徑。 The substrate processing method of the present invention is a substrate processing method that performs processing while supplying a heat transfer gas to the back side of the substrate. This processing method uses a processing apparatus including a processing container, a mounting table, a supporting member, a first gas supply path, a second gas supply path, a flow rate adjusting device, a pressure detecting device, an exhaust path, a valve, and an exhaust device. In the processing container, the object to be processed is stored in a vacuum, and the mounting table mounts the substrate in the processing container, and has a plurality of pores that spray the heat transfer gas toward the back side of the substrate. The branch The support member is provided to displace the upper surface of the mounting table and to displace the substrate, and to support the substrate at a position away from the upper surface of the mounting table, the first gas supply path supplying gas to the processing container The second gas supply path is connected to the air hole, the flow rate adjusting device is provided in the first gas supply path, and adjusts a supply flow rate of the gas, and the pressure detecting device detects a pressure in the processing container. The exhaust path is connected to the processing vessel, and the valve variably adjusts the conductivity of the exhaust path, and the exhaust device is connected to the exhaust path.

且，本發明之基板處理方法，係包含有以下 步驟：在藉由前述支撐構件使前述基板脫離前述載置台之上面的狀態下，將前述處理容器內調節成作為真空狀態之壓力P0的步驟；在藉由前述支撐構件使前述基板脫離前述載置台之上面的狀態下，經由前述第1氣體供給路徑將調壓氣體導入至前述處理容器內，且將前述處理容器內調節成比前述壓力P0更高之壓力P1的步驟；在將前述處理容器內保持為前述壓力P1的狀態下，使前述支撐構件下降，並將前述基板載置於前述載置台的步驟；在將前述基板載置於前述載置台的狀態下，停止向前述處理容器內導入調壓氣體，且經由前述第2氣體供給路徑及前述氣孔，朝向前述基板之背面側供給前述傳熱氣體，而將前述基板與前述載置台之間的傳熱空間保持為壓力P2的步驟；及一邊維持前述傳熱空間之前述壓力P2，一邊經由前述第1氣體供給路徑，將處理氣體導入至前述處理容器內，且將 除了前述傳熱空間以外之前述處理容器內調節成壓力P3，從而處理前述基板的步驟。 Moreover, the substrate processing method of the present invention includes the following a step of adjusting the inside of the processing container to a pressure P0 in a vacuum state in a state where the substrate is detached from the upper surface of the mounting table by the support member; and the substrate is detached from the mounting table by the support member In the upper state, the step of introducing the pressure-regulating gas into the processing container via the first gas supply path, and adjusting the inside of the processing container to a pressure P1 higher than the pressure P0; a state in which the support member is lowered while the pressure P1 is maintained, and the substrate is placed on the mounting table. When the substrate is placed on the mounting table, the introduction into the processing container is stopped. And a step of supplying the heat transfer gas to the back surface side of the substrate via the second gas supply path and the pores, and maintaining a heat transfer space between the substrate and the mounting table at a pressure P2; The pressure P2 of the heat transfer space is maintained, and the processing gas is introduced to the front through the first gas supply path. Processing chamber, and the The step of adjusting the pressure P3 in the aforementioned processing container other than the aforementioned heat transfer space to process the aforementioned substrate.

本發明之基板處理方法，係亦可在將前述傳 熱空間保持為壓力P2的步驟中，從前述處理容器內對前述調壓氣體進行排氣。 The substrate processing method of the present invention may also be In the step of maintaining the hot space at the pressure P2, the pressure-regulating gas is exhausted from the inside of the processing chamber.

本發明之基板處理方法，係前述壓力P0、 P1、P2的關係亦可為P1≧P2>P0。 The substrate processing method of the present invention is the aforementioned pressure P0, The relationship between P1 and P2 may also be P1≧P2>P0.

本發明之基板處理方法，係亦可使用與前述 傳熱氣體相同種類的氣體作為前述調壓氣體。在該情況下，前述調壓氣體及前述傳熱氣體，係亦可為氦氣或氮氣。 The substrate processing method of the present invention can also be used as described above The same type of gas as the heat transfer gas is used as the above-mentioned pressure regulating gas. In this case, the pressure regulating gas and the heat transfer gas may be helium or nitrogen.

本發明之基板處理方法，係亦可使用與前述 傳熱氣體不同種類的氣體作為前述調壓氣體。在該情況下，前述調壓氣體係氮氣或氦氣，前述傳熱氣體，係亦可為氦氣或氮氣。 The substrate processing method of the present invention can also be used as described above Different types of gases of the heat transfer gas are used as the above-mentioned pressure regulating gas. In this case, the pressure regulating gas system may be nitrogen or helium, and the heat transfer gas may be helium or nitrogen.

本發明之基板處理方法，係亦可在對前述調 壓氣體進行排氣的步驟中使前述處理容器內下降至前述壓力P0。 The substrate processing method of the present invention may also be in the above adjustment In the step of exhausting the pressurized gas, the inside of the processing container is lowered to the aforementioned pressure P0.

本發明之基板處理方法，係亦可從前述氣孔 朝向前述基板之背面的外周部噴射前述傳熱氣體。在該情況下，前述氣孔，係亦可為從前述基板之端部朝向5mm以上20mm以下之範圍內的背面噴射前述傳熱氣體者。 The substrate processing method of the present invention may also be from the aforementioned pores The heat transfer gas is sprayed toward the outer peripheral portion of the back surface of the substrate. In this case, the pores may be such that the heat transfer gas is sprayed from the end portion of the substrate toward the back surface in a range of 5 mm or more and 20 mm or less.

本發明之基板處理方法，係亦可為對前述基 板進行電漿處理者。 The substrate processing method of the present invention may also be for the aforementioned base The board is subjected to a plasma processor.

本發明之基板處理裝置，係一邊將對基板之 背面側供給傳熱氣體一邊進行處理者。該基板處理裝置，係具備有：處理容器，收容被處理體且可將內部保持為真空；載置台，在前述處理容器內載置前述基板，且具有朝向前述基板之背面側噴射前述傳熱氣體的複數個氣孔；支撐構件，被設置成可對前述載置台之上面突出/沒入進行位移，且將前述基板支撐於使脫離前述載置台之上面的位置；第1氣體供給路徑，對前述處理容器內供給氣體；第2氣體供給路徑，連通於前述氣孔；流量調節裝置，被設於前述第1氣體供給路徑，且調節前述氣體的供給流量；壓力檢測裝置，檢測前述處理容器內的壓力；排氣路徑，被連接於前述處理容器內；閥，可變地調節前述排氣路徑之傳導度；排氣裝置，被連接於前述排氣路徑；及控制部，控制前述基板處理裝置之各構成部從而處理前述基板。 The substrate processing apparatus of the present invention is to be opposite to the substrate The back side is supplied with a heat transfer gas while being processed. The substrate processing apparatus includes a processing container that houses the object to be processed and can hold the inside of the vacuum, and a mounting table that mounts the substrate in the processing container and that ejects the heat transfer gas toward the back side of the substrate a plurality of pores; the support member is disposed to displace the protrusion/deployment of the upper surface of the mounting table, and support the substrate at a position away from the upper surface of the mounting table; the first gas supply path is processed a gas is supplied into the container; a second gas supply path is connected to the air hole; a flow rate adjusting device is provided in the first gas supply path, and a supply flow rate of the gas is adjusted; and a pressure detecting device detects a pressure in the processing container; An exhaust path is connected to the processing container; a valve variably adjusts a conductivity of the exhaust path; an exhaust device is connected to the exhaust path; and a control unit controls each component of the substrate processing device The portion thus processes the aforementioned substrate.

且，在本發明之基板處理裝置中，前述控制 部，係以進行下述步驟的方式予以控制，其包含：在藉由前述支撐構件使前述基板脫離前述載置台之上面的狀態下，將前述處理容器內調節成作為真空狀態之壓力P0的步驟；在藉由前述支撐構件使前述基板脫離前述載置台之上面的狀態下，經由前述第1氣體供給路徑將調壓氣體導入至前述處理容器內，且將前述處理容器內調節成比前述壓力P0更高之壓力P1的步驟；在將前述處理容器內保持為前述壓力P1的狀態下，使前述支撐構件下降，並在前 述載置台載置前述基板的步驟；在將前述基板載置於前述載置台的狀態下，停止向前述處理容器內導入調壓氣體，且經由前述第2氣體供給路徑及前述氣孔，朝向前述基板之背面側供給前述傳熱氣體，而將前述基板與前述載置台之間的傳熱空間保持為壓力P2的步驟；及一邊維持前述傳熱空間之前述壓力P2，一邊經由第1氣體供給路徑，將處理氣體導入至前述處理容器內，且將除了前述傳熱空間以外之前述處理容器內調節成壓力P3，予以處理前述基板的步驟。 Moreover, in the substrate processing apparatus of the present invention, the aforementioned control The control unit is configured to perform the step of adjusting the inside of the processing container to a pressure P0 in a vacuum state in a state where the substrate is separated from the upper surface of the mounting table by the support member. a state in which the substrate is separated from the upper surface of the mounting table by the support member, the pressure-regulating gas is introduced into the processing container through the first gas supply path, and the inside of the processing container is adjusted to be higher than the pressure P0. a step of higher pressure P1; in the state where the inside of the processing container is maintained at the aforementioned pressure P1, the support member is lowered and preceded a step of placing the substrate on the mounting table, and stopping the introduction of the pressure-regulating gas into the processing chamber while the substrate is placed on the mounting table, and facing the substrate via the second gas supply path and the air hole The heat transfer gas is supplied to the back side, and the heat transfer space between the substrate and the mounting table is maintained at a pressure P2; and the first gas supply path is maintained while maintaining the pressure P2 of the heat transfer space. The process of processing the substrate by introducing the processing gas into the processing container and adjusting the inside of the processing container other than the heat transfer space to a pressure P3.

本發明之基板處理裝置，係亦可在將前述傳 熱空間保持為壓力P2的步驟中，從前述處理容器內對前述調壓氣體進行排氣。 The substrate processing apparatus of the present invention may also be in the foregoing In the step of maintaining the hot space at the pressure P2, the pressure-regulating gas is exhausted from the inside of the processing chamber.

在本發明之基板處理裝置中，前述壓力P0、 P1、P2的關係亦可為P1≧P2>P0。 In the substrate processing apparatus of the present invention, the aforementioned pressure P0, The relationship between P1 and P2 may also be P1≧P2>P0.

本發明之基板處理裝置，係前述氣孔亦可設 置成偏向於與前述基板之背面之外周部對向的區域。在該情況下，前述氣孔，係亦可為設置成從前述基板之端部偏向於與5mm以上20mm以下之範圍內之背面對向的區域。 In the substrate processing apparatus of the present invention, the pores may be provided The region is opposed to the outer peripheral portion of the back surface of the substrate. In this case, the pores may be provided in a region that is opposite to the back surface in a range of 5 mm or more and 20 mm or less from the end portion of the substrate.

本發明之基板處理裝置，係亦可為更具備有 用於在前述處理容器內使電漿生成之高頻電源的電漿處理裝置。 The substrate processing apparatus of the present invention may be further provided A plasma processing apparatus for a high frequency power source for generating plasma in the aforementioned processing vessel.

本發明之基板處理方法，係在藉由支撐構件 使基板脫離載置台之上面的狀態下，進行將調壓氣體導入至處理容器內而予以調壓的步驟之後，以使基板載置於載置台的方式，可輕易地使傳熱氣體充滿於基板之背面側的傳熱空間。因此，可提高傳熱氣體所致之傳熱效率，且提高基板面內之處理的均勻性。 The substrate processing method of the present invention is carried out by a supporting member After the substrate is separated from the upper surface of the mounting table, the step of introducing the pressure-regulating gas into the processing container to perform pressure regulation is performed, and then the substrate is placed on the mounting table, so that the heat transfer gas can be easily filled on the substrate. The heat transfer space on the back side. Therefore, the heat transfer efficiency by the heat transfer gas can be improved, and the uniformity of the treatment in the surface of the substrate can be improved.

又，在本發明之基板處理裝置中，由於可輕 易地使傳熱氣體充滿於基板之背面側的空間，因此，可大幅減少傳熱氣體用之氣孔的個數。因此，可降低氣孔所致之蝕刻不均勻的發生，且，可提高基板面內之處理的均勻性。 Moreover, in the substrate processing apparatus of the present invention, since it is light Since the heat transfer gas is easily filled in the space on the back side of the substrate, the number of pores for the heat transfer gas can be greatly reduced. Therefore, the occurrence of etching unevenness due to the pores can be reduced, and the uniformity of the treatment in the surface of the substrate can be improved.

1‧‧‧處理容器 1‧‧‧Processing container

1a‧‧‧底壁 1a‧‧‧ bottom wall

1b、1b1，1b2‧‧‧側壁 1b, 1b 1 , 1b 2 ‧‧‧ sidewall

1c‧‧‧蓋體 1c‧‧‧ cover

3‧‧‧密封構件 3‧‧‧ Sealing members

5‧‧‧載置台 5‧‧‧ mounting table

5a‧‧‧基材 5a‧‧‧Substrate

7‧‧‧下部基材 7‧‧‧Lower substrate

8‧‧‧絕緣構件 8‧‧‧Insulating components

15‧‧‧噴頭 15‧‧‧ nozzle

15a‧‧‧氣體擴散空間 15a‧‧‧ gas diffusion space

15b‧‧‧氣體吐出孔 15b‧‧‧ gas discharge hole

17‧‧‧氣體導入口 17‧‧‧ gas inlet

19‧‧‧氣體供給管 19‧‧‧ gas supply pipe

21A，21B‧‧‧閥 21A, 21B‧‧‧ Valve

23A，23B‧‧‧質流控制器 23A, 23B‧‧‧Flow Controller

25‧‧‧氣體供給源 25‧‧‧ gas supply source

27‧‧‧排氣用開口 27‧‧‧Exhaust opening

29‧‧‧排氣管 29‧‧‧Exhaust pipe

31‧‧‧排氣裝置 31‧‧‧Exhaust device

33‧‧‧基板搬送用開口 33‧‧‧Opening for substrate transfer

35‧‧‧閘閥 35‧‧‧ gate valve

37‧‧‧O形環 37‧‧‧O-ring

39‧‧‧供電線 39‧‧‧Power supply line

41‧‧‧匹配箱(M.B.) 41‧‧‧Matching box (M.B.)

43‧‧‧高頻電源 43‧‧‧High frequency power supply

45‧‧‧供電用開口 45‧‧‧Power supply opening

50‧‧‧傳熱空間 50‧‧‧heat transfer space

67‧‧‧第1絕緣層 67‧‧‧1st insulation layer

69‧‧‧電極 69‧‧‧Electrode

71‧‧‧第2絕緣層 71‧‧‧2nd insulation layer

100‧‧‧電漿蝕刻裝置 100‧‧‧ plasma etching device

S‧‧‧基板 S‧‧‧Substrate

[圖1]表示本發明之一實施形態之電漿蝕刻裝置之一例的概略剖面圖。 Fig. 1 is a schematic cross-sectional view showing an example of a plasma etching apparatus according to an embodiment of the present invention.

[圖2A]放大表示載置台之上面之主要部份的平面圖。 Fig. 2A is an enlarged plan view showing a main part of the upper surface of the mounting table.

[圖2B]圖2A之IIB-IIB線箭視剖面圖。 2B is a cross-sectional view taken along line IIB-IIB of FIG. 2A.

[圖3]表示圖1之控制部之硬體構成的方塊圖。 Fig. 3 is a block diagram showing a hardware configuration of a control unit of Fig. 1;

[圖4]表示本發明之一實施形態之基板處理方法之工程步驟的時序圖。 Fig. 4 is a timing chart showing the engineering steps of the substrate processing method according to an embodiment of the present invention.

[圖5]說明本發明之一實施形態之基板處理方法的主要工程中之處理容器內之狀態的工程圖。 Fig. 5 is a view showing a state in a processing container in a main process of a substrate processing method according to an embodiment of the present invention.

[圖6]說明接續於圖5之工程的圖面。 [Fig. 6] A view showing a drawing continued from the construction of Fig. 5.

[圖7]說明接續於圖6之工程的圖面。 FIG. 7 is a view showing a drawing continued from the construction of FIG. 6.

[圖8]說明接續於圖7之工程的圖面。 FIG. 8 is a view showing a drawing continued from the construction of FIG. 7.

[圖9]說明接續於圖8之工程的圖面。 [Fig. 9] A drawing showing the construction following the Fig. 8.

[圖10]說明接續於圖9之工程的圖面。 FIG. 10 is a view showing a drawing continued from the construction of FIG. 9.

[圖11]說明作為比較例，習知技術之基板處理方法的主要工程中之處理容器內之狀態的工程圖。 Fig. 11 is a view showing a state of a state in a processing container in a main process of a substrate processing method of a prior art as a comparative example.

以下，參照圖面來詳細說明本發明之實施形態。接下來，參閱圖1，說明關於本發明之一實施形態的電漿蝕刻裝置。如圖1所示，電漿蝕刻裝置100，係構成為對FPD用之矩形的基板S進行蝕刻之電容耦合型平行平板電漿蝕刻裝置。另外，FPD舉例有液晶顯示器(LCD)、電致發光(Electro Luminescence；EL)顯示器、電漿顯示器面板(PDP)等。特別是，電漿蝕刻裝置100，係適於處理大型基板S，例如長邊之長度為1m以上之玻璃基板為目的者。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Next, a plasma etching apparatus according to an embodiment of the present invention will be described with reference to Fig. 1 . As shown in FIG. 1, the plasma etching apparatus 100 is a capacitive coupling type parallel plate plasma etching apparatus which etches the rectangular substrate S for FPD. Further, the FPD is exemplified by a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), and the like. In particular, the plasma etching apparatus 100 is suitable for processing a large substrate S, for example, a glass substrate having a long side length of 1 m or more.

<處理容器> <processing container>

該電漿蝕刻裝置100，係具有由表面經陽極氧化處理(耐酸鋁處理)之鋁所構成而形成為方筒狀的處理容器1。處理容器1，係藉由底壁1a、4個側壁1b(僅圖示側壁1b1、1b2 2個)所構成。又，在處理容器1之上部，係 接合有蓋體1c。 The plasma etching apparatus 100 is a processing container 1 which is formed of aluminum having an anodized surface (aluminum-resistant treatment) and formed into a rectangular tube shape. Processing container 1, by the Department of the bottom wall 1a, 4 side walls 1b (only shown the side walls 1b 1, 1b 2 2 th) is constituted. Moreover, the lid body 1c is joined to the upper part of the processing container 1.

蓋體1c，係被構成可藉由未圖示之開關機構 進行開關。在關閉蓋體1c的狀態下，蓋體1c與各側壁1b之接合部份，係以O形環等之密封構件3來密封，進而維持處理容器1內的氣密性。 The cover body 1c is configured by a switch mechanism not shown Switch on. In a state in which the lid body 1c is closed, the joint portion between the lid body 1c and each side wall 1b is sealed by a sealing member 3 such as an O-ring, and the airtightness in the processing container 1 is maintained.

<載置台> <Placement table>

在處理容器1內，係設有載置基板S之載置台5。在處理容器1內之底部，係配置有絕緣構件6與被設置於該絕緣構件6上的下部基材7。在下部基材7上，係設有可載置基板S的載置台5。亦作為下部電極的載置台5，係具有由鋁或不鏽鋼(SUS)等之導電性材料所構成的基材5a。基材5a、下部基材7及絕緣構件6之側部，係由絕緣構件8所包圍。藉由絕緣構件8，可確保載置台5之側面的絕緣性，且防止電漿處理時的異常放電。 In the processing container 1, a mounting table 5 on which the substrate S is placed is provided. At the bottom of the processing container 1, an insulating member 6 and a lower substrate 7 provided on the insulating member 6 are disposed. On the lower substrate 7, a mounting table 5 on which the substrate S can be placed is provided. The mounting table 5, which is also a lower electrode, has a base material 5a made of a conductive material such as aluminum or stainless steel (SUS). The side portions of the base material 5a, the lower base material 7, and the insulating member 6 are surrounded by the insulating member 8. The insulating member 8 can ensure the insulation of the side surface of the mounting table 5 and prevent abnormal discharge during plasma processing.

載置台5，係在基材5a之上面，具有從下方 依序疊層有第1絕緣層67、電極69及第2絕緣層71的靜電吸附機構。以從直流電源73經由供電線75對第1絕緣層67與第2絕緣層71之間的電極69施加直流電壓的方式，可例如藉由庫倫力來靜電吸附基板S。在載置了基板S的狀態下，在第2絕緣層71之上面與基板S之背面之間，形成有作為空隙的傳熱空間50，該空隙係用於在吸附保持了基板S的狀態下填充後述之傳熱氣體。另外，由於傳熱空間50僅為一點點高度，因此，在圖1中僅表 示其位置。 The mounting table 5 is attached to the upper surface of the substrate 5a and has a lower surface The electrostatic adsorption mechanism of the first insulating layer 67, the electrode 69, and the second insulating layer 71 is laminated in this order. The substrate S can be electrostatically adsorbed by Coulomb force, for example, by applying a DC voltage from the DC power source 73 to the electrode 69 between the first insulating layer 67 and the second insulating layer 71 via the power supply line 75. In a state in which the substrate S is placed, a heat transfer space 50 as a void is formed between the upper surface of the second insulating layer 71 and the back surface of the substrate S, and the void is used in a state in which the substrate S is adsorbed and held. The heat transfer gas described later is filled. In addition, since the heat transfer space 50 is only a little height, only the table in FIG. Show its location.

又，載置台5，係被設置成可對其上面突出/沒入進行位移，且具備有複數個升降銷(在圖1中係省略圖示)，複數個升降銷係作為將基板S支撐於脫離載置台5之上面之位置的支撐構件。 Further, the mounting table 5 is provided so as to be displaceable from the upper surface thereof, and is provided with a plurality of lifting pins (not shown in FIG. 1), and a plurality of lifting pins are used to support the substrate S. A support member that is separated from the upper surface of the mounting table 5.

<氣體供給機構> <Gas supply mechanism>

在載置台5的上方，設有與該載置台5呈平行且對向而具有上部電極功能之噴頭15。噴頭15，係被支撐於處理容器1之上部的蓋體1c。噴頭15係呈中空狀，在其內部設有氣體擴散空間15a。又，在噴頭15的下面(與載置台5的相對面)，形成有吐出作為處理氣體之蝕刻氣體的複數個氣體吐出孔15b。該噴頭15為接地狀態，而與載置台5一同構成一對平行平板電極。 Above the mounting table 5, a head 15 that is parallel to the mounting table 5 and has an upper electrode function is provided. The head 15 is supported by a lid 1c of the upper portion of the processing container 1. The head 15 is hollow, and a gas diffusion space 15a is provided inside. Further, a plurality of gas discharge holes 15b for discharging an etching gas as a processing gas are formed on the lower surface of the shower head 15 (opposing surface opposite to the mounting table 5). The head 15 is in a grounded state, and together with the mounting table 5, constitutes a pair of parallel plate electrodes.

在噴頭15之上部中央附近，設有氣體導入口17。在該氣體導入口17，係連接有作為第1氣體供給路徑的氣體供給管19。在該氣體供給管19，設有2個閥21A、21A及質流控制器(MFC)23A。且，氣體供給管19之另一端側，係例如連接有供給作為處理氣體之蝕刻氣體、調壓氣體、傳熱氣體等的氣體供給源25。另外，作為蝕刻氣體，係除了例如鹵素系氣體或O2氣體以外，可使用Ar氣體等之稀有氣體等。 A gas introduction port 17 is provided near the center of the upper portion of the head 15. A gas supply pipe 19 as a first gas supply path is connected to the gas introduction port 17. In the gas supply pipe 19, two valves 21A and 21A and a mass flow controller (MFC) 23A are provided. Further, on the other end side of the gas supply pipe 19, for example, a gas supply source 25 that supplies an etching gas, a pressure regulating gas, a heat transfer gas, or the like as a processing gas is connected. In addition, as the etching gas, for example, a rare gas such as an Ar gas or the like can be used in addition to a halogen-based gas or an O 2 gas.

<排氣機構> <Exhaust mechanism>

靠近前述處理容器1內之四角隅的位置，在底壁1a形成作為貫穿開口部之排氣用開口27於4個部位(僅圖示2個)。在各排氣用開口27，連接有排氣管29。在排氣管29其端部具有凸緣部29a，而在該凸緣部29a與底壁1a之間介設有O形環(省略圖示)之狀態下被加以固定。排氣管29，係被連接於排氣裝置31。排氣裝置31係具備有例如渦輪分子泵等的真空泵，藉此，構成為可將處理容器1內抽真空至預定的減壓環境。又，在排氣管29，係設有可變地調節排氣路徑之傳導的APC閥32。 The exhaust opening 27 as a through-opening is formed in four places (only two are shown) in the bottom wall 1a at a position close to the four corners in the processing container 1. An exhaust pipe 29 is connected to each of the exhaust openings 27. The exhaust pipe 29 has a flange portion 29a at its end, and is fixed in a state in which an O-ring (not shown) is interposed between the flange portion 29a and the bottom wall 1a. The exhaust pipe 29 is connected to the exhaust device 31. The exhaust device 31 is provided with a vacuum pump such as a turbo molecular pump, and is configured to evacuate the inside of the processing container 1 to a predetermined reduced pressure environment. Further, the exhaust pipe 29 is provided with an APC valve 32 that variably adjusts the conduction of the exhaust path.

<基板搬入搬出口> <Substrate loading and unloading>

在處理容器1之側壁1b1，係設有基板搬送用開口33。該基板搬送用開口33，係藉由閘閥35而予以開關，且可在與鄰接基板S之搬送室(省略圖示)之間進行搬送。閘閥35，係在使作為第1密封構件的O形環37介設於與側壁1b1之間的狀態下，使用螺絲等之固定手段被固定於側壁1b1。 A substrate transfer opening 33 is provided in the side wall 1b 1 of the processing container 1. The substrate transfer opening 33 is opened and closed by the gate valve 35, and can be transported between the transfer chamber (not shown) adjacent to the substrate S. The gate valve 35 is fixed to the side wall 1b 1 by a fixing means such as a screw in a state in which the O-ring 37 as the first sealing member is interposed between the side wall 1b 1 and the side.

<高頻電源> <High frequency power supply>

在下部基材7，連接有供電線39。在該供電線39，係經由匹配箱(M.B.)41連接有高頻電源43。藉此，便能夠從高頻電源43將例如13.56MHz之高頻電力，經由下部基材7供應至作為下部電極的載置台5。此外，供電線39係經由底壁1a所形成之作為貫穿開口部的供電用開 口45而被導入至處理容器1內。 A power supply line 39 is connected to the lower substrate 7. In the power supply line 39, a high frequency power supply 43 is connected via a matching box (M.B.) 41. Thereby, high-frequency power of, for example, 13.56 MHz can be supplied from the high-frequency power source 43 to the mounting table 5 as the lower electrode via the lower substrate 7. Further, the power supply line 39 is formed by the bottom wall 1a as a power supply opening through the opening. The port 45 is introduced into the processing container 1.

<背冷式機構> <Back cooling mechanism>

在底壁1a、絕緣構件6及下部基材7，形成有貫通該些的氣體通路77。該氣體通路77，係經由傳熱氣體供給管78，被連接於氣體供給源25。在該傳熱氣體供給管78，設有2個閥21B、21B、質流控制器(MFC)23B及PCV(Pressure Control Valve)24。且，可經由氣體通路77，將例如He氣體等供給至基板S之背面側的傳熱空間50。亦即，載置台5，係具備有將傳熱氣體供給至基板S之背面而進行冷卻的背冷式機構。被供給至氣體通路77之傳熱氣體，係經由形成於下部基材7與基材5a之邊界的氣體儲存部79，暫時在水平方向擴散之後，從複數個氣孔81噴出至基板S之背側，該複數個氣孔81係貫穿基材5a、第1絕緣膜67及第2絕緣膜71而形成。如此一來，載置台5之冷熱會被傳遞至基板S，且基板S被維持為預定溫度。因此，可在基板S之面內使從載置台5向基板S的熱傳遞均勻，且可防止蝕刻不均勻之發生。 A gas passage 77 penetrating the bottom wall 1a, the insulating member 6, and the lower base member 7 is formed. This gas passage 77 is connected to the gas supply source 25 via the heat transfer gas supply pipe 78. In the heat transfer gas supply pipe 78, two valves 21B and 21B, a mass flow controller (MFC) 23B, and a PCV (Pressure Control Valve) 24 are provided. Further, for example, He gas or the like can be supplied to the heat transfer space 50 on the back side of the substrate S via the gas passage 77. In other words, the mounting table 5 is provided with a back cooling type mechanism that supplies a heat transfer gas to the back surface of the substrate S for cooling. The heat transfer gas supplied to the gas passage 77 is temporarily diffused in the horizontal direction through the gas storage portion 79 formed at the boundary between the lower base material 7 and the base material 5a, and then ejected from the plurality of pores 81 to the back side of the substrate S. The plurality of pores 81 are formed to penetrate the substrate 5a, the first insulating film 67, and the second insulating film 71. As a result, the heat of the stage 5 is transferred to the substrate S, and the substrate S is maintained at a predetermined temperature. Therefore, heat transfer from the mounting table 5 to the substrate S can be made uniform in the surface of the substrate S, and occurrence of etching unevenness can be prevented.

圖2A，係放大表示載置台5之上面之主要部 份的平面圖。又，圖2B，係圖2A中之IIB-IIB線箭視之剖面圖。在本實施形態之電漿蝕刻裝置100中，係以執行後述之處理步驟的方式，可使傳熱氣體輕易地充滿於基板S之背面側的傳熱空間50，由此可知，如圖2A及圖2B所示，複數個氣孔81係設置成偏向於與基板S之背面之 外周部對向的區域。更具體而言，氣孔81，係在載置台5中，被設置成偏向於與從基板S之端部起的距離L為5mm以上20mm以下之範圍內對向的區域。由於從基板S之端部起的距離L為5mm以上20mm以下的範圍內係在形成有元件的區域外，因此，即使在該部位產生蝕刻不均勻，亦不會對良率造成影響。如此一來，在本實施形態之電漿蝕刻裝置100中，係可在與基板S之元件形成區域對向之載置台5的區域中，大幅減少傳熱氣體用之氣孔81的個數，且較佳的係可去掉該區域中之氣孔81，因此，可減低氣孔81所致之蝕刻不均勻的發生。 2A is an enlarged view showing the main part of the upper surface of the mounting table 5. The plan of the share. 2B is a cross-sectional view taken along line IIB-IIB of FIG. 2A. In the plasma etching apparatus 100 of the present embodiment, the heat transfer gas can be easily filled in the heat transfer space 50 on the back side of the substrate S so as to perform the processing steps described later. As shown in FIG. 2B, a plurality of air holes 81 are disposed to be opposite to the back surface of the substrate S. The area opposite the outer circumference. More specifically, the air holes 81 are provided in the mounting table 5 so as to be opposed to a region facing the distance L from the end portion of the substrate S in a range of 5 mm or more and 20 mm or less. Since the distance L from the end portion of the substrate S is in the range of 5 mm or more and 20 mm or less in the region in which the element is formed, even if etching unevenness occurs in the portion, the yield is not affected. In the plasma etching apparatus 100 of the present embodiment, the number of the pores 81 for the heat transfer gas can be greatly reduced in the region of the mounting table 5 opposed to the element forming region of the substrate S, and It is preferable to remove the pores 81 in the region, and therefore, the occurrence of etching unevenness caused by the pores 81 can be reduced.

在下部基材7之內部，係設置有傳熱媒體室 83。該傳熱媒體室83，係構成為經由傳熱媒體導入管83a而導入例如氟系液體等的傳熱媒體，且經由傳熱媒體排出管83b排出並進行循環。該傳熱媒體之熱(例如冷熱)，係經由下部基材7、載置台5及傳熱氣體，傳遞至基板S，從而進行基板S之溫度調節。 Inside the lower substrate 7, a heat transfer medium chamber is provided 83. The heat transfer medium chamber 83 is configured to introduce a heat transfer medium such as a fluorine-based liquid through the heat transfer medium introduction pipe 83a, and discharge and circulate through the heat transfer medium discharge pipe 83b. The heat of the heat transfer medium (for example, heat and cold) is transmitted to the substrate S via the lower substrate 7, the mounting table 5, and the heat transfer gas, thereby adjusting the temperature of the substrate S.

<壓力檢測裝置> <Pressure detecting device>

在電漿蝕刻裝置100，係設有測量處理容器1內之壓力的壓力計88。壓力計88係與後述之控制部90連接，且以即時的方式將處理容器1內之壓力的測量結果提供至控制部90。 In the plasma etching apparatus 100, a pressure gauge 88 that measures the pressure in the processing container 1 is provided. The pressure gauge 88 is connected to a control unit 90 to be described later, and supplies the measurement result of the pressure in the processing container 1 to the control unit 90 in an instant manner.

<控制部> <Control Department>

電漿蝕刻裝置100之各構成部，係形成為被連接於控制部90，且藉由控制部90來統籌控制的構成。控制部90，係控制電漿蝕刻裝置100之各構成部的模組控制器(Module Controller)。控制部90，係被連接於未圖示的I/O模組。該I/O模組，係具有複數個I/O部，且被連接於電漿蝕刻裝置100之各終端設備。在I/O部，設有用於控制數位訊號、類比訊號及串聯訊號之輸出入的I/O板。相對於各終端設備的控制訊號，係分別從I/O部輸出。又，來自各終端設備之輸出訊號，係分別被輸入至I/O部。在電漿蝕刻裝置100中，例如舉出質流控制器(MFC)23A、23B、APC閥32、排氣裝置31、高頻電源43等來作為與I/O部連接的終端設備。 Each component of the plasma etching apparatus 100 is configured to be connected to the control unit 90 and controlled by the control unit 90. The control unit 90 is a module controller that controls each component of the plasma etching apparatus 100. The control unit 90 is connected to an I/O module (not shown). The I/O module has a plurality of I/O sections and is connected to each terminal device of the plasma etching apparatus 100. In the I/O section, there are I/O boards for controlling the input and output of digital signals, analog signals, and serial signals. The control signals with respect to each terminal device are respectively output from the I/O unit. Moreover, the output signals from the respective terminal devices are respectively input to the I/O unit. In the plasma etching apparatus 100, for example, a mass flow controller (MFC) 23A, 23B, an APC valve 32, an exhaust device 31, a high-frequency power source 43, and the like are provided as terminal devices connected to the I/O unit.

接下來，參閱圖3，說明控制部90之硬體構成的一例。控制部90，係具備有主控制部101、如鍵盤或滑鼠等的輸入裝置102、如印表機等的輸出裝置103、顯示裝置104、記憶裝置105、外部介面106及彼此連接該些裝置的匯流排107。主控制部101，係具有CPU(中央處理裝置)111、RAM(隨機存取記憶體)112及ROM(唯讀記憶體)113。記憶裝置105，係只要為可記憶資訊者，則不限於任何形態，例如可以是硬碟裝置或光碟裝置。又，記憶裝置105係對於電腦可讀取之記錄媒體115記錄資訊，又可由記錄媒體115讀取資訊。若記錄媒體115為可記錄資訊者，則不限於任何形態，例如可以是硬碟、光碟、快閃記憶體等。記錄媒體115，係亦可為記錄 了本實施形態之基板處理方法之處理程式的記錄媒體。 Next, an example of the hardware configuration of the control unit 90 will be described with reference to Fig. 3 . The control unit 90 includes a main control unit 101, an input device 102 such as a keyboard or a mouse, an output device 103 such as a printer, a display device 104, a memory device 105, an external interface 106, and a device connected to each other. Busbar 107. The main control unit 101 includes a CPU (Central Processing Unit) 111, a RAM (Random Access Memory) 112, and a ROM (Read Only Memory) 113. The memory device 105 is not limited to any form as long as it can memorize information, and may be, for example, a hard disk device or a compact disk device. Further, the memory device 105 records information on the computer-readable recording medium 115, and can read information from the recording medium 115. If the recording medium 115 is a recordable information, it is not limited to any form, and may be, for example, a hard disk, a compact disk, a flash memory, or the like. Recording medium 115, which can also be a record A recording medium of a processing program of the substrate processing method of the present embodiment.

在控制部90中，CPU111使用RAM112作為工作區並執行儲存於ROM113或記憶裝置105之程式，藉此，能夠在本實施形態之電漿蝕刻裝置100中對基板S執行電漿蝕刻處理。 In the control unit 90, the CPU 111 uses the RAM 112 as a work area and executes a program stored in the ROM 113 or the memory device 105, whereby the plasma etching process can be performed on the substrate S in the plasma etching apparatus 100 of the present embodiment.

<處理步驟> <Processing steps>

接下來，說明如上述所構成之電漿蝕刻裝置100的處理動作。圖4，係表示在電漿蝕刻裝置100所進行之本發明之一實施形態之基板處理方法之處理步驟的時序圖。又，圖5~圖10，係說明在該處理步驟之主要工程中之處理容器1內之狀態的工程圖。本實施形態中之較佳的處理步驟，係如圖4所示，可包含工程1~工程5。 Next, the processing operation of the plasma etching apparatus 100 configured as described above will be described. Fig. 4 is a timing chart showing the processing steps of the substrate processing method according to the embodiment of the present invention performed by the plasma etching apparatus 100. 5 to 10 are drawings showing the state of the inside of the processing container 1 in the main process of the processing step. The preferred processing steps in this embodiment are as shown in FIG. 4 and may include Engineering 1 to Project 5.

(準備工程) (preparation project)

首先，作為前階段之處理，在開放閘閥35的狀態下，將基板S藉由未圖示之搬送裝置的叉具，經由基板搬送用開口33搬入到處理容器1內，且收授至升降銷85。 First, in the state in which the gate valve 35 is opened, the substrate S is carried into the processing container 1 through the substrate transfer opening 33 by the fork device of the transfer device (not shown), and is fed to the lift pin. 85.

(工程1) (Project 1)

在工程1中，係如圖5所示，在藉由升降銷85使基板S脫離載置台5之上面的狀態下，將處理容器1內調節成作為真空狀態的壓力P0。亦即，基板搬入後，關閉閘閥35，且使排氣裝置31動作，並將處理容器1內抽真空 至壓力P0(抽真空狀態)。如圖4所示，在該工程1之階段中，係不供給調壓氣體G1、傳熱氣體G2、蝕刻氣體G3之任一。 In the first embodiment, as shown in FIG. 5, the inside of the processing container 1 is adjusted to a pressure P0 in a vacuum state in a state where the substrate S is separated from the upper surface of the mounting table 5 by the lift pins 85. That is, after the substrate is loaded, the gate valve 35 is closed, the exhaust device 31 is operated, and the inside of the processing container 1 is evacuated. To pressure P0 (vacuum state). As shown in FIG. 4, in the stage of the process 1, neither the pressure regulating gas G1, the heat transfer gas G2, and the etching gas G3 is supplied.

(工程2) (Engineering 2)

在工程2中，係如圖6所示，在藉由升降銷85使基板S脫離載置台5之上面的狀態下，經由作為第1氣體供給路徑的氣體供給管19，將調壓氣體G1導入至處理容器1內，且將處理容器1內調節成比壓力P0更大的壓力P1。亦即，在藉由升降銷85保持了基板S的狀態下，一邊使排氣裝置31動作，一邊開放閥21A、21A且從氣體供給源25經由氣體供給管19、氣體導入口17將調壓氣體G1導入到噴頭15之氣體擴散空間15a。此時，藉由質流控制器23A，進行調壓氣體G1的流量控制。又，藉由APC閥32調節排氣路徑之傳導。被導入至氣體擴散空間15a的調壓氣體G1，係進一步經由複數個吐出孔15b而被均勻地吐出至處理容器1內，從而使處理容器1內被維持於壓力P1。另外，如圖4所示，在該工程2之階段中，係不供給傳熱氣體G2及蝕刻氣體G3。又，在工程2中，排氣裝置31之排氣強度係設定成比工程1更弱的調壓。 In the second embodiment, as shown in FIG. 6, the substrate S is released from the upper surface of the mounting table 5 by the lift pins 85, and the pressure regulating gas G1 is introduced through the gas supply pipe 19 as the first gas supply path. The inside of the processing container 1 is adjusted, and the inside of the processing container 1 is adjusted to a pressure P1 larger than the pressure P0. In other words, while the substrate S is held by the lift pin 85, the valves 21A and 21A are opened while the exhaust device 31 is operated, and the pressure is regulated from the gas supply source 25 via the gas supply pipe 19 and the gas inlet port 17. The gas G1 is introduced into the gas diffusion space 15a of the shower head 15. At this time, the flow rate control of the pressure regulating gas G1 is performed by the mass flow controller 23A. Further, the conduction of the exhaust path is regulated by the APC valve 32. The pressure-regulating gas G1 introduced into the gas diffusion space 15a is uniformly discharged into the processing container 1 through a plurality of discharge holes 15b, so that the inside of the processing container 1 is maintained at the pressure P1. Further, as shown in FIG. 4, in the stage of the process 2, the heat transfer gas G2 and the etching gas G3 are not supplied. Further, in the second aspect, the exhaust gas intensity of the exhaust unit 31 is set to be weaker than that of the first step.

(工程3) (Engineering 3)

在工程3中，係如圖7所示，在將處理容器1內保持為壓力P1的狀態下，使升降銷85下降且將基板S載置於 載置台5。藉此，基板S，係被裝設於載置台5上。在基板S之背面與載置台5之上面之間，形成有傳熱空間50。又，由於基板S之背面側的傳熱空間50係形成為封入有調壓氣體G1的狀態，因此，基板S與載置台5之間之傳熱空間50內的壓力係與壓力P1大致相同。另外，如圖4所示，在該工程3之階段中，係不供給傳熱氣體G2及蝕刻氣體G3。又，在工程3中，排氣裝置31之排氣強度係設定成比工程1更弱的調壓。 In the third aspect, as shown in FIG. 7, in the state where the inside of the processing container 1 is maintained at the pressure P1, the lift pin 85 is lowered and the substrate S is placed. The stage 5 is placed. Thereby, the substrate S is mounted on the mounting table 5. A heat transfer space 50 is formed between the back surface of the substrate S and the upper surface of the mounting table 5. Further, since the heat transfer space 50 on the back side of the substrate S is formed in a state in which the pressure-regulating gas G1 is sealed, the pressure in the heat transfer space 50 between the substrate S and the mounting table 5 is substantially the same as the pressure P1. Further, as shown in FIG. 4, in the stage of the process 3, the heat transfer gas G2 and the etching gas G3 are not supplied. Further, in the third aspect, the exhaust gas intensity of the exhaust unit 31 is set to be weaker than that of the first step.

(工程4) (Engineering 4)

在工程4中，係如圖8所示，停止將調壓氣體G1導入到處理容器1內，且使基板S靜電吸附之後，開始供給傳熱氣體G2。基板S之靜電吸附，係以從直流電源73經由供電線75對第1絕緣層67與第2絕緣層71之間的電極69施加直流電壓的方式予以進行。且，開放閥21B、21B，經由作為第2氣體供給路徑之傳熱氣體供給管78、氣體通路77、氣體儲存部79，將氣體供給源25之傳熱氣體G2從複數個氣孔81噴射到基板S的背面側，並將基板S與載置台5之間的傳熱空間50調節成壓力P2。此時，藉由質流控制器23B及PCV24進行傳熱氣體G2的流量控制，且將傳熱空間50之壓力調壓成P2。在此，在前段之工程3中，由於在基板S之背面側的傳熱空間50封入有調壓氣體G1，且傳熱空間50內的壓力係大致接近壓力P1的狀態，因此，可以短時間快速地進行對壓力P2的 調節。又，即使在調壓氣體G1與傳熱氣體G2為不同種類的氣體時，亦輕易地被置換成傳熱氣體G2。另外，在該工程4中，在使用有對電漿蝕刻處理帶來影響之可能性的氣體種來作為調壓氣體G1時，如圖4及圖8所示，藉由排氣裝置31進行處理容器1內之調壓氣體G1的排氣，且使處理容器1內之傳熱空間50以外的空間下降至壓力P0為較佳。如圖4所示，在該工程4之階段中，係未供給蝕刻氣體G3。又，在工程4中，排氣裝置31之排氣強度係設定成與工程1相同之抽真空。 In the fourth step, as shown in FIG. 8, the pressure-regulating gas G1 is stopped from being introduced into the processing container 1, and after the substrate S is electrostatically adsorbed, the supply of the heat-transfer gas G2 is started. The electrostatic adsorption of the substrate S is performed by applying a DC voltage from the DC power source 73 to the electrode 69 between the first insulating layer 67 and the second insulating layer 71 via the power supply line 75. Further, the open valves 21B and 21B eject the heat transfer gas G2 of the gas supply source 25 from the plurality of pores 81 to the substrate via the heat transfer gas supply pipe 78, the gas passage 77, and the gas storage portion 79 as the second gas supply path. The back side of S and the heat transfer space 50 between the substrate S and the stage 5 are adjusted to a pressure P2. At this time, the flow rate control of the heat transfer gas G2 is performed by the mass flow controller 23B and the PCV 24, and the pressure of the heat transfer space 50 is adjusted to P2. Here, in the first stage of the process 3, since the pressure-regulating gas G1 is sealed in the heat transfer space 50 on the back side of the substrate S, and the pressure in the heat transfer space 50 is substantially close to the pressure P1, it can be short-time. Performing pressure on P2 quickly Adjustment. Further, even when the pressure-regulating gas G1 and the heat-transfer gas G2 are different types of gases, they are easily replaced with the heat-transfer gas G2. Further, in the above-described project 4, when a gas species having a possibility of affecting the plasma etching treatment is used as the pressure-regulating gas G1, as shown in FIGS. 4 and 8, the gas is processed by the exhaust device 31. It is preferable that the pressure of the pressure-regulating gas G1 in the container 1 is lowered to a space other than the heat transfer space 50 in the processing container 1 to the pressure P0. As shown in FIG. 4, in the stage of the process 4, the etching gas G3 is not supplied. Further, in the fourth aspect, the exhaust gas intensity of the exhaust unit 31 is set to be the same as that of the first step.

(工程5) (Engineering 5)

在工程5中，係在工程4後，一邊繼續供給傳熱氣體G2且維持傳熱空間50之壓力P2，如圖9所示，一邊將蝕刻氣體G3導入至處理容器1內，從而將除了傳熱空間50之外的處理容器1內調節成壓力P3，並對基板S進行電漿蝕刻處理。在該工程5中，係開放閥21A、21A，從氣體供給源25經由氣體供給管19、氣體導入口17，將蝕刻氣體G3導入到噴頭15之氣體擴散空間15a。此時，藉由質流控制器23A，進行蝕刻氣體G3的流量控制。被導入至氣體擴散空間15a之蝕刻氣體G3，係進一步經由複數個氣體吐出孔15b，被均勻地吐出至載置於載置台5上的基板S。此時，處理容器1內之傳熱空間50以外之空間的壓力P3，係可因應設為目的之蝕刻處理的內容適當地進行設定。在該狀態下，高頻電力係從高頻電源43施 加至載置台5。藉此，在作為下部電極的載置台5與作為上部電極的噴頭15之間會產生高頻電場，而使蝕刻氣體G3解離並電漿化。藉由該電漿，對基板S施予蝕刻處理。另外，在工程5中，排氣裝置31之排氣強度係設定成比工程1更弱的調壓。 In the process 5, after the process 4, the heat transfer gas G2 is continuously supplied and the pressure P2 of the heat transfer space 50 is maintained, and as shown in FIG. 9, the etching gas G3 is introduced into the processing container 1, and the pass is passed. The inside of the processing container 1 other than the thermal space 50 is adjusted to a pressure P3, and the substrate S is subjected to plasma etching treatment. In the above-described project 5, the valves 21A and 21A are opened, and the etching gas G3 is introduced into the gas diffusion space 15a of the shower head 15 from the gas supply source 25 via the gas supply pipe 19 and the gas introduction port 17. At this time, the flow rate control of the etching gas G3 is performed by the mass flow controller 23A. The etching gas G3 introduced into the gas diffusion space 15a is uniformly discharged to the substrate S placed on the mounting table 5 via a plurality of gas discharge holes 15b. At this time, the pressure P3 in the space other than the heat transfer space 50 in the processing container 1 can be appropriately set in accordance with the content of the etching process for the purpose. In this state, the high frequency power is applied from the high frequency power source 43 It is added to the mounting table 5. Thereby, a high-frequency electric field is generated between the mounting table 5 as the lower electrode and the shower head 15 as the upper electrode, and the etching gas G3 is dissociated and plasmad. The substrate S is subjected to an etching treatment by the plasma. Further, in the work 5, the exhaust gas intensity of the exhaust device 31 is set to be a weaker pressure regulation than the first one.

(結束工程) (end project)

對基板S施予預定時間之蝕刻處理後，停止從高頻電源43施加高頻電力。又，關閉閥21A、21A而停止蝕刻氣體G3之導入之後，如圖10所示，將處理容器1內減壓至預定之壓力，且藉由升降銷85使基板S上升至搬送位置。另外，在本工程中，係使處理容器1內下降至壓力P0為較佳。接下來，開放閘閥35，將基板S從載置台5收授至未圖示之搬送裝置的夾盤，並從處理容器1之基板搬送用開口33搬出基板S。藉由以上之操作，使基板S進行之電漿蝕刻處理結束。 After the substrate S is subjected to an etching process for a predetermined time, the application of the high frequency power from the high frequency power source 43 is stopped. After the valves 21A and 21A are closed and the introduction of the etching gas G3 is stopped, as shown in FIG. 10, the inside of the processing container 1 is depressurized to a predetermined pressure, and the substrate S is raised to the transfer position by the lift pins 85. Further, in the present process, it is preferable to lower the inside of the processing container 1 to the pressure P0. Then, the gate valve 35 is opened, and the substrate S is taken up from the mounting table 5 to the chuck of the transfer device (not shown), and the substrate S is carried out from the substrate transfer opening 33 of the processing container 1. By the above operation, the plasma etching treatment by the substrate S is completed.

以重複如上述般之處理步驟的方式，可對複數個基板S進行電漿蝕刻處理。 The plurality of substrates S may be subjected to plasma etching treatment in such a manner that the processing steps as described above are repeated.

另外，作為調壓氣體G1，在使用不會對電漿蝕刻處理帶來影響的氣體種時，在工程4中，亦可不進行調壓氣體G1的排氣。 Further, when the gas to be used which does not affect the plasma etching treatment is used as the pressure-regulating gas G1, the exhaust gas of the pressure-regulating gas G1 may not be performed in the fourth step.

在上述的處理步驟，處理容器1內之壓力P0、P1與傳熱空間50之P2的關係，係設成為P1≧P2>P0為較佳，設成P1=P2為更佳。例如，作為壓力P0 係可設成為0~0.67Pa之範圍內，較佳為0.13Pa左右，作為壓力P1係可設成為100~300Pa之範圍內，較佳為200Pa左右，作為壓力P2係可設成為100~300Pa之範圍內，較佳為200Pa左右。如此一來，在工程2及工程3中，以事先將處理容器1內之壓力P1設定成在工程5中所設定之傳熱空間50之壓力P2以上的方式，形成為在基板S之背面側的傳熱空間50封入有調壓氣體G1的狀態。在此，在使用與傳熱氣體G2相同種類的氣體作為調壓氣體G1時，由於可利用在傳熱空間50所封入之調壓氣體G1直接作為傳熱氣體G2，因此，可快速且效率良好地進行基板S之溫度調節。另一方面，在使用與傳熱氣體G2不同種類的氣體作為調壓氣體G1時，係以在工程4之後使在傳熱空間50所封入之狀態的調壓氣體G1輕易地置換成傳熱氣體G2的方式，可快速且效率良好地進行基板S的溫度調節。如此一來，可提高從載置台5向基板S的熱傳導效率，且在基板S的面內抑制溫度之不均勻。其結果，可防止例如蝕刻不均勻等之處理不均勻。 In the above-described processing steps, the relationship between the pressures P0 and P1 in the processing container 1 and the P2 of the heat transfer space 50 is preferably P1 ≧ P2 > P0, and more preferably P1 = P2. For example, as pressure P0 The pressure may be set to be in the range of 0 to 0.67 Pa, preferably about 0.13 Pa, and the pressure P1 may be set to be in the range of 100 to 300 Pa, preferably about 200 Pa, and the pressure P2 may be set to be 100 to 300 Pa. Within the range, it is preferably about 200 Pa. In the second and third aspects of the process, the pressure P1 in the processing container 1 is set to be equal to or higher than the pressure P2 of the heat transfer space 50 set in the work 5, and is formed on the back side of the substrate S. The heat transfer space 50 is in a state in which the pressure-regulating gas G1 is sealed. Here, when the same type of gas as the heat transfer gas G2 is used as the pressure regulating gas G1, since the pressure regulating gas G1 enclosed in the heat transfer space 50 can be directly used as the heat transfer gas G2, it can be quickly and efficiently. The temperature adjustment of the substrate S is performed. On the other hand, when a gas of a different type from the heat transfer gas G2 is used as the pressure-regulating gas G1, the pressure-regulating gas G1 in a state enclosed by the heat transfer space 50 is easily replaced with a heat-transfer gas after the work 4 In the G2 mode, the temperature adjustment of the substrate S can be performed quickly and efficiently. As a result, the heat transfer efficiency from the mounting table 5 to the substrate S can be improved, and the temperature unevenness can be suppressed in the surface of the substrate S. As a result, uneven processing such as uneven etching can be prevented.

作為在上述處理步驟所使用的調壓氣體G1， 係可使用與傳熱氣體G2相同種類的氣體。該情況下，作為調壓氣體G1及傳熱氣體G2，例如使用氦氣、氮氣等為較佳。 As the pressure regulating gas G1 used in the above processing steps, The same kind of gas as the heat transfer gas G2 can be used. In this case, as the pressure regulating gas G1 and the heat transfer gas G2, for example, helium gas, nitrogen gas or the like is preferably used.

又，亦可使用與傳熱氣體G2不同種類的氣體 作為調壓氣體G1。例如，調壓氣體G1為氮氣時，係使用氦氣作為傳熱氣體G2，調壓氣體G1為氦氣時，係使用氮 氣作為傳熱氣體G2。 Also, a gas different from the heat transfer gas G2 may be used. As the pressure regulating gas G1. For example, when the pressure-regulating gas G1 is nitrogen gas, helium gas is used as the heat-transfer gas G2, and when the pressure-regulating gas G1 is helium gas, nitrogen is used. Gas acts as the heat transfer gas G2.

接下來，在與習知技術之對比，說明本發明之作用效果。圖11，係說明作為比較例，習知技術之基板處理方法的主要工程中之處理容器內之狀態的工程圖。圖11(a)，係表示對應於上述實施形態之工程1的工程(參閱圖5)。亦即，在基板搬入後，關閉閘閥35，且藉由升降銷85使基板S脫離載置台5之上面的狀態下，使排氣裝置31動作，將處理容器1內調節成作為真空狀態的壓力P0。 Next, the effects of the present invention will be described in comparison with the prior art. Fig. 11 is a view showing a state of a state in a processing container in a main process of a substrate processing method of a prior art as a comparative example. Fig. 11 (a) shows a work corresponding to the work 1 of the above embodiment (see Fig. 5). In other words, after the substrate is loaded, the gate valve 35 is closed, and the substrate S is released from the upper surface of the mounting table 5 by the lift pins 85, the exhaust device 31 is operated, and the inside of the processing container 1 is adjusted to a pressure as a vacuum state. P0.

接下來，圖11(b)，係表示對應於上述實施形態之工程3的工程(參閱圖7)但是，與工程3不同，以將處理容器1內保持為壓力P0的狀態(抽真空狀態)，使升降銷85下降且將基板S載置於載置台5。藉此，基板S，係被裝設於載置台5上。在基板S之背面與載置台5之上面之間，形成有傳熱空間50。 Next, Fig. 11(b) shows a process corresponding to the work 3 of the above-described embodiment (see Fig. 7). However, unlike the case 3, the inside of the process container 1 is maintained at a pressure P0 (vacuum state). The lift pin 85 is lowered and the substrate S is placed on the mounting table 5. Thereby, the substrate S is mounted on the mounting table 5. A heat transfer space 50 is formed between the back surface of the substrate S and the upper surface of the mounting table 5.

接下來，在圖11(c)中，係在將基板S載置於載置台5的狀態下，以從直流電源73經由供電線75對電極69施加直流電壓的方式，使基板S靜電吸附。且，經由作為第2氣體供給路徑之傳熱氣體供給管78、氣體通路77、氣體儲存部79，從複數個氣孔81朝向基板S之背面側供給傳熱氣體G2，並將基板S與載置台5之間的傳熱空間50保持為壓力P2，且經由氣體供給管19將蝕刻氣體G3導入至處理容器1內，且將除了傳熱空間50之外的處理容器1內調節成壓力P3，從而處理基板S。 Then, in the state in which the substrate S is placed on the mounting table 5, the substrate S is electrostatically adsorbed so as to apply a DC voltage to the electrode 69 from the DC power source 73 via the power supply line 75. The heat transfer gas supply pipe 78, the gas passage 77, and the gas storage portion 79, which are the second gas supply paths, supply the heat transfer gas G2 from the plurality of pores 81 toward the back side of the substrate S, and the substrate S and the stage are placed. The heat transfer space 50 between 5 is maintained at a pressure P2, and the etching gas G3 is introduced into the processing container 1 via the gas supply pipe 19, and the inside of the processing container 1 other than the heat transfer space 50 is adjusted to a pressure P3, thereby The substrate S is processed.

如圖11(a)~(c)所示，習知技術之基板處 理方法，係在圖4之時序圖中，不加以設置相當於工程2及工程4的工程。亦即，從將處理容器1內設成為壓力P0的狀態[圖11(a)]，立即將基板S載置於載置台5[圖11(b)]，且開始導入蝕刻氣體G3及傳熱氣體G2[圖11(c)]。因此，當基板S為大型時，對直至將傳熱氣體均等地填充於基板S之背面側的傳熱空間50而言耗費時間，導致生產率下降且難以進行傳熱氣體所致之溫度控制，且在基板S面內容易產生溫度不均勻的問題。又，必須涵蓋載置台5之全面設置多數個傳熱氣體用之氣孔81。 As shown in Figures 11(a) to (c), the substrate of the prior art is The method is in the timing chart of FIG. 4, and the engineering equivalent to the engineering 2 and the engineering 4 is not provided. In other words, the state in which the pressure P0 is set in the processing container 1 [Fig. 11 (a)] is immediately placed on the mounting table 5 [Fig. 11 (b)], and the introduction of the etching gas G3 and heat transfer is started. Gas G2 [Fig. 11 (c)]. Therefore, when the substrate S is large, it takes time to uniformly fill the heat transfer space 50 on the back side of the substrate S with the heat transfer gas, resulting in a decrease in productivity and difficulty in temperature control by the heat transfer gas, and A problem of temperature unevenness is likely to occur in the surface of the substrate S. Further, it is necessary to cover the air holes 81 for the plurality of heat transfer gases provided in the mounting table 5.

對此，本實施形態之基板處理方法，係在工 程2中，以藉由升降銷85使基板S脫離載置台5之上面的狀態，將調壓氣體G1導入至處理容器1內，且進行將處理容器1內調節成比壓力P0更大的的壓力P1的步驟之後，在工程3中使基板S載置於載置台5。藉此，可使傳熱氣體G2輕易地充滿於基板S之背面側的傳熱空間50。 因此，可提高傳熱氣體G2所致之傳熱效率，且在基板S面內提高處理之均勻性。 In this regard, the substrate processing method of the present embodiment is In the second step, the pressure-regulating gas G1 is introduced into the processing container 1 in a state where the substrate S is separated from the upper surface of the mounting table 5 by the lift pin 85, and the inside of the processing container 1 is adjusted to be larger than the pressure P0. After the step of the pressure P1, the substrate S is placed on the mounting table 5 in the process 3. Thereby, the heat transfer gas G2 can be easily filled in the heat transfer space 50 on the back side of the substrate S. Therefore, the heat transfer efficiency by the heat transfer gas G2 can be improved, and the uniformity of the treatment can be improved in the plane of the substrate S.

又，在本實施形態之電漿蝕刻裝置100中， 由於可輕易地使傳熱氣體G2充滿於基板S之背面側的傳熱空間50，因此，相較於習知技術，可大幅減少傳熱氣體G2用之氣孔81的個數。具體而言，可設置成使複數個氣孔81偏向於與基板S之背面之外周部對向的區域。例 如，在本實施形態之電漿蝕刻裝置100中，如圖2A及圖2B所示，氣孔81，係在載置台5中，被設置成偏向於與從基板S之端部起的距離L為5mm以上20mm以下之範圍內對向的區域。由於從基板S之端部起的距離L為5mm以上20mm以下的範圍內係在形成有元件的區域外，因此，即使在該部位產生蝕刻不均勻，亦不會對製品之良率造成影響。如此一來，在本實施形態之電漿蝕刻裝置100中，係可在與形成有基板S之元件之區域對向的載置台5上之區域中，大幅減少傳熱氣體用之氣孔81的個數，且可減低氣孔81所致之蝕刻不均勻的發生。藉此，可在基板S之面內提高處理的均勻性。 Further, in the plasma etching apparatus 100 of the present embodiment, Since the heat transfer gas G2 can be easily filled in the heat transfer space 50 on the back side of the substrate S, the number of the pores 81 for the heat transfer gas G2 can be greatly reduced as compared with the prior art. Specifically, it is possible to set a plurality of air holes 81 to be opposed to a region facing the outer peripheral portion of the back surface of the substrate S. example For example, in the plasma etching apparatus 100 of the present embodiment, as shown in FIGS. 2A and 2B, the air holes 81 are provided in the mounting table 5 so as to be biased to a distance L from the end portion of the substrate S. The area opposite to the range of 5 mm or more and 20 mm or less. Since the distance L from the end portion of the substrate S is in the range of 5 mm or more and 20 mm or less in the region where the element is formed, even if etching unevenness occurs in the portion, the yield of the product is not affected. As a result, in the plasma etching apparatus 100 of the present embodiment, the number of the gas holes 81 for the heat transfer gas can be greatly reduced in the region on the mounting table 5 opposed to the region where the element of the substrate S is formed. The number and the occurrence of etching unevenness caused by the air holes 81 can be reduced. Thereby, the uniformity of the treatment can be improved in the plane of the substrate S.

以上，雖以例示之目的詳細說明了本發明之 實施形態，但本發明並不限於上述實施形態，亦可進行各種變形。例如，本發明，並不限於以FPD用基板為處理對象的電漿處理裝置，亦可適用於以例如半導體晶圓為處理對象的電漿處理容器。又，不限於電漿蝕刻裝置，亦可適用於例如進行電漿灰化處理的灰化裝置、進行電漿CVD處理或電漿擴散處理的電漿成膜裝置、其他電漿處理裝置。 In the above, the present invention has been described in detail for the purpose of illustration. Although the embodiment is described, the present invention is not limited to the above embodiment, and various modifications can be made. For example, the present invention is not limited to a plasma processing apparatus that processes a substrate for FPD, and is also applicable to a plasma processing container that is processed by, for example, a semiconductor wafer. Further, the present invention is not limited to the plasma etching apparatus, and may be applied to, for example, an ashing apparatus that performs plasma ashing treatment, a plasma film forming apparatus that performs plasma CVD processing or plasma diffusion processing, and other plasma processing apparatuses.

又，在上述實施形態中，雖係設成為使傳熱 氣體G2從共通的氣體供給源25供給蝕刻氣體或調壓氣體的構成，但亦可設置其他的傳熱氣體專用的供給源，且該處起將傳熱氣體G2供給至傳熱空間50。 Further, in the above embodiment, the heat transfer is performed. The gas G2 is configured to supply an etching gas or a pressure regulating gas from the common gas supply source 25. However, another supply source for the heat transfer gas may be provided, and the heat transfer gas G2 may be supplied to the heat transfer space 50.

Claims (17)

一種基板處理方法，係一邊對基板之背面側供給傳熱氣體一邊進行處理，該基板處理方法係使用具備有下述之處理裝置，其包含：處理容器，收容被處理體且可將內部保持為真空；載置台，在前述處理容器內載置前述基板，且具有朝向前述基板之背面側噴射前述傳熱氣體的複數個氣孔；支撐構件，被設置成可對前述載置台之上面突出/沒入進行位移，且將前述基板支撐於使脫離前述載置台之上面的位置；第1氣體供給路徑，對前述處理容器內供給氣體；第2氣體供給路徑，連通於前述氣孔；流量調節裝置，被設於前述第1氣體供給路徑，且調節前述氣體的供給流量；壓力檢測裝置，檢測前述處理容器內的壓力；排氣路徑，被連接於前述處理容器；閥，可變地調節前述排氣路徑之傳導度；及排氣裝置，被連接於前述排氣路徑，且包含有以下步驟：在藉由前述支撐構件使前述基板脫離前述載置台之上面的狀態下，將前述處理容器內調節成作為真空狀態之壓力P0的步驟；在藉由前述支撐構件使前述基板脫離前述載置台之上面的狀態下，經由前述第1氣體供給路徑將調壓氣體導入 至前述處理容器內，且將前述處理容器內調節成比前述壓力P0更高之壓力P1的步驟；在將前述處理容器內保持為前述壓力P1的狀態下，使前述支撐構件下降，並將前述基板載置於前述載置台的步驟；在將前述基板載置於前述載置台的狀態下，停止向前述處理容器內導入調壓氣體，且經由前述第2氣體供給路徑及前述氣孔，朝向前述基板之背面側供給前述傳熱氣體，而將前述基板與前述載置台之間的傳熱空間保持為壓力P2的步驟；及一邊維持前述傳熱空間之前述壓力P2，一邊經由前述第1氣體供給路徑，將處理氣體導入至前述處理容器內，且將除了前述傳熱空間以外之前述處理容器內調節成壓力P3，從而處理前述基板的步驟。 A substrate processing method is a process for supplying a heat transfer gas to a back surface side of a substrate, and the substrate processing method includes a processing apparatus including a processing container, and the object to be processed is held therein to maintain the inside a mounting chamber that mounts the substrate in the processing chamber and has a plurality of pores that spray the heat transfer gas toward the back side of the substrate; and the support member is provided to protrude/drop into the upper surface of the mounting table Displacement, and supporting the substrate at a position away from the upper surface of the mounting table; the first gas supply path supplies gas to the processing chamber; the second gas supply path communicates with the air hole; and the flow rate adjusting device is provided The first gas supply path adjusts a supply flow rate of the gas; the pressure detecting means detects a pressure in the processing container; the exhaust path is connected to the processing container; and a valve variably adjusts the exhaust path Conductivity; and an exhaust device connected to the exhaust path and including the following steps: a step of adjusting the inside of the processing container to a pressure P0 in a vacuum state in a state where the support member is separated from the upper surface of the mounting table, and the substrate is detached from the upper surface of the mounting table by the support member. Introducing a pressure regulating gas through the first gas supply path a step of adjusting the inside of the processing container to a pressure P1 higher than the pressure P0; and maintaining the pressure P1 in the processing container, lowering the support member, and the aforementioned a step of placing the substrate on the mounting table; stopping the introduction of the pressure-regulating gas into the processing chamber while the substrate is placed on the mounting table, and facing the substrate via the second gas supply path and the air hole The heat transfer gas is supplied to the back side, and the heat transfer space between the substrate and the mounting table is maintained at a pressure P2; and the first gas supply path is maintained while maintaining the pressure P2 of the heat transfer space. a step of introducing the processing gas into the processing container and adjusting the inside of the processing container except the aforementioned heat transfer space to a pressure P3 to process the substrate. 如申請專利範圍第1項之基板處理方法，其中，在將前述傳熱空間保持為壓力P2的步驟中，從前述處理容器內對前述調壓氣體進行排氣。 The substrate processing method according to claim 1, wherein in the step of maintaining the heat transfer space at a pressure P2, the pressure-regulating gas is exhausted from the processing chamber. 如申請專利範圍第1或2項之基板處理方法，其中，前述壓力P0、P1、P2的關係，係P1≧P2>P0。 The substrate processing method according to claim 1 or 2, wherein the relationship between the pressures P0, P1, and P2 is P1≧P2>P0. 如申請專利範圍第1~3項中之任一項的基板處理方法，其中，使用與前述傳熱氣體相同種類的氣體作為前述調壓氣 體。 The substrate processing method according to any one of claims 1 to 3, wherein a gas of the same kind as the heat transfer gas is used as the pressure regulating gas. body. 如申請專利範圍第4項之基板處理方法，其中，前述調壓氣體及前述傳熱氣體，係氦氣。 The substrate processing method according to claim 4, wherein the pressure regulating gas and the heat transfer gas are helium gas. 如申請專利範圍第1~3項中之任一項的基板處理方法，其中，使用與前述傳熱氣體不同種類的氣體作為前述調壓氣體。 The substrate processing method according to any one of claims 1 to 3, wherein a gas of a different type from the heat transfer gas is used as the pressure-regulating gas. 如申請專利範圍第6項之基板處理方法，其中，前述調壓氣體係氮氣或氦氣，前述傳熱氣體係亦氦氣或氮氣。 The substrate processing method of claim 6, wherein the pressure regulating gas system is nitrogen or helium, and the heat transfer gas system is also helium or nitrogen. 如申請專利範圍第1~7項中之任一項的基板處理方法，其中，在對前述調壓氣體進行排氣的步驟中，係使前述處理容器內下降至前述壓力P0。 The substrate processing method according to any one of claims 1 to 7, wherein in the step of exhausting the pressure-regulating gas, the inside of the processing container is lowered to the pressure P0. 如申請專利範圍第1~8項中之任一項的基板處理方法，其中，從前述氣孔朝向前述基板之背面的外周部，噴射前述傳熱氣體。 The substrate processing method according to any one of claims 1 to 8, wherein the heat transfer gas is ejected from an outer peripheral portion of the back surface of the substrate. 如申請專利範圍第9項的基板處理方法，其中，前述氣孔，係從前述基板之端部朝向5mm以上20mm以下之範圍內的背面噴射前述傳熱氣體。 The substrate processing method according to claim 9, wherein the pores are sprayed from a rear surface of the substrate toward a back surface of a range of 5 mm or more and 20 mm or less. 如申請專利範圍第1~10項中之任一項的基板處理方法，其中，對前述基板進行電漿處理者。 The substrate processing method according to any one of claims 1 to 10, wherein the substrate is subjected to plasma treatment. 一種基板處理裝置，係一邊對基板之背面側供給傳熱氣體一邊進行處理，該基板處理裝置，係具備：處理容器，收容被處理體且可將內部保持為真空；載置台，在前述處理容器內載置前述基板，且具有朝向前述基板之背面側噴射前述傳熱氣體的複數個氣孔；支撐構件，被設置成可對前述載置台之上面突出/沒入進行位移，且將前述基板支撐於使脫離前述載置台之上面的位置；第1氣體供給路徑，對前述處理容器內供給氣體；第2氣體供給路徑，連通於前述氣孔；流量調節裝置，被設於前述第1氣體供給路徑，且調節前述氣體的供給流量；壓力檢測裝置，檢測前述處理容器內的壓力；排氣路徑，被連接於前述處理容器；閥，可變地調節前述排氣路徑之傳導度；排氣裝置，被連接於前述排氣路徑，及控制部，控制前述基板處理裝置之各構成部，從而處理前述基板，前述控制部，係以進行下述之步驟的方式加以控制，其包括：在藉由前述支撐構件使前述基板脫離前述載置台之上面的狀態下，將前述處理容器內調節成作為真空狀態之壓力P0的步驟；在藉由前述支撐構件使前述基板脫離前述載置台之上 面的狀態下，經由前述第1氣體供給路徑將調壓氣體導入至前述處理容器內，且將前述處理容器內調節成比前述壓力P0更高之壓力P1的步驟；在將前述處理容器內保持為前述壓力P1的狀態下，使前述支撐構件下降，並將前述基板載置於前述載置台的步驟；在將前述基板載置於前述載置台的狀態下，停止向前述處理容器內導入調壓氣體，且經由前述第2氣體供給路徑及前述氣孔，朝向前述基板之背面側供給前述傳熱氣體，而將前述基板與前述載置台之間的傳熱空間保持為壓力P2的步驟；及一邊維持前述傳熱空間之前述壓力P2，一邊經由前述第1氣體供給路徑，將處理氣體導入至前述處理容器內，且將除了前述傳熱空間以外之前述處理容器內調節成壓力P3，從而處理前述基板的步驟。 A substrate processing apparatus that performs processing while supplying a heat transfer gas to a back surface side of a substrate, the substrate processing apparatus including: a processing container that houses the object to be processed and can hold the inside of the vacuum; and a mounting table in the processing container The substrate is placed therein and has a plurality of air holes for spraying the heat transfer gas toward the back side of the substrate; the support member is provided to displace the upper surface of the mounting table, and to support the substrate a first gas supply path for supplying gas to the processing chamber; a second gas supply path communicating with the air hole; and a flow rate adjusting device provided on the first gas supply path; Adjusting the supply flow rate of the gas; the pressure detecting means detects the pressure in the processing container; the exhaust path is connected to the processing container; the valve variably adjusts the conductivity of the exhaust path; and the exhaust means is connected Controlling each component of the substrate processing apparatus in the exhaust path and the control unit, thereby processing the foregoing The substrate, the control unit is controlled to perform the following steps, and the inside of the processing container is adjusted to be in a vacuum state in a state where the substrate is separated from the upper surface of the mounting table by the support member. a step of pressure P0; disposing the substrate from the mounting table by the support member a step of introducing a pressure-regulating gas into the processing container via the first gas supply path, and adjusting the inside of the processing container to a pressure P1 higher than the pressure P0; maintaining the inside of the processing container In the state of the pressure P1, the support member is lowered, and the substrate is placed on the mounting table. When the substrate is placed on the mounting table, the introduction of the pressure regulation into the processing container is stopped. And supplying the gas to the back surface side of the substrate via the second gas supply path and the pores, and maintaining a heat transfer space between the substrate and the mounting table at a pressure P2; and maintaining The pressure P2 of the heat transfer space is introduced into the processing container through the first gas supply path, and the inside of the processing container other than the heat transfer space is adjusted to a pressure P3 to process the substrate. A step of. 如申請專利範圍第12項之基板處理裝置，其中，在將前述傳熱空間保持為壓力P2的步驟中，從前述處理容器內對前述調壓氣體進行排氣。 The substrate processing apparatus according to claim 12, wherein in the step of maintaining the heat transfer space at a pressure P2, the pressure-regulating gas is exhausted from the processing chamber. 如申請專利範圍第13項之基板處理裝置，其中，前述壓力P0、P1、P2的關係，係P1≧P2>P0。 The substrate processing apparatus according to claim 13, wherein the relationship between the pressures P0, P1, and P2 is P1≧P2>P0. 如申請專利範圍第12~14項中之任一項的基板處 理裝置，其中，前述氣孔，係設置成偏向於與前述基板背面之外周部對向的區域。 The substrate at any one of the claims 12-14 The device is configured to be biased toward a region facing the outer peripheral portion of the back surface of the substrate. 如申請專利範圍第15項的基板處理裝置，其中，前述氣孔，係設置成偏向於與從前述基板之端部起5mm以上20mm以下之範圍內之背面對向的區域。 The substrate processing apparatus according to claim 15, wherein the air holes are provided to be opposed to a region facing the back surface in a range of 5 mm or more and 20 mm or less from an end portion of the substrate. 如申請專利範圍第12~16項中之任一項的基板處理裝置，其中，前述基板處理裝置，係更具備有用於在前述處理容器內使電漿生成之高頻電源的電漿處理裝置。 The substrate processing apparatus according to any one of claims 12 to 16, wherein the substrate processing apparatus further includes a plasma processing apparatus for generating a high-frequency power source for generating plasma in the processing container.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI717693B (en) * 2016-03-31 2021-02-01 日商國際電氣股份有限公司 Substrate processing device, semiconductor device manufacturing method, substrate loading method, and recording medium

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104681402B (en) * 2015-03-16 2018-03-16 京东方科技集团股份有限公司 Substrate heating equipment and substrate heating method
JP6468213B2 (en) * 2016-02-19 2019-02-13 東京エレクトロン株式会社 Substrate processing apparatus, substrate processing method, and storage medium
JP6667412B2 (en) * 2016-09-30 2020-03-18 東京エレクトロン株式会社 Substrate processing equipment
JP7030414B2 (en) * 2017-02-14 2022-03-07 株式会社Ｓｃｒｅｅｎホールディングス Board processing method and its equipment
CN110021536B (en) * 2018-01-10 2023-03-31 弘塑科技股份有限公司 Substrate processing apparatus
JP7199200B2 (en) * 2018-11-01 2023-01-05 東京エレクトロン株式会社 SUBSTRATE PLACE, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING METHOD
KR102323579B1 (en) * 2020-12-18 2021-11-09 피에스케이 주식회사 Method and apparatus for treating substrate

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07102372A (en) * 1993-10-01 1995-04-18 Nissin Electric Co Ltd Vacuum treatment of material and device therefor
US6592673B2 (en) * 1999-05-27 2003-07-15 Applied Materials, Inc. Apparatus and method for detecting a presence or position of a substrate
KR20040070008A (en) * 2003-01-29 2004-08-06 쿄세라 코포레이션 Electrostatic chuck
JP4493638B2 (en) * 2006-10-12 2010-06-30 株式会社アルバック Vacuum processing method
JP5269335B2 (en) * 2007-03-30 2013-08-21 東京エレクトロン株式会社 Plasma processing equipment
JP5188385B2 (en) * 2008-12-26 2013-04-24 株式会社日立ハイテクノロジーズ Plasma processing apparatus and method of operating plasma processing apparatus
WO2011037020A1 (en) * 2009-09-28 2011-03-31 東京エレクトロン株式会社 Method and apparatus for cooling subject to be processed, and computer-readable storage medium
JP2012084654A (en) * 2010-10-08 2012-04-26 Panasonic Corp Dry etching device and neutralization method of substrate
JP5689283B2 (en) * 2010-11-02 2015-03-25 東京エレクトロン株式会社 Substrate processing method and storage medium storing program for executing the method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI717693B (en) * 2016-03-31 2021-02-01 日商國際電氣股份有限公司 Substrate processing device, semiconductor device manufacturing method, substrate loading method, and recording medium
TWI717694B (en) * 2016-03-31 2021-02-01 日商國際電氣股份有限公司 Substrate processing device, semiconductor device manufacturing method and recording medium

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