CN101126155B - Chemical vapor deposition apparatus - Google Patents
Chemical vapor deposition apparatus Download PDFInfo
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- CN101126155B CN101126155B CN2007101299716A CN200710129971A CN101126155B CN 101126155 B CN101126155 B CN 101126155B CN 2007101299716 A CN2007101299716 A CN 2007101299716A CN 200710129971 A CN200710129971 A CN 200710129971A CN 101126155 B CN101126155 B CN 101126155B
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- gas feed
- pipeline
- subassembly block
- gas
- vapor deposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
Abstract
The invention discloses a chemical vapor deposition apparatus, comprising a first gas feed-in assembly block coupled with a process chamber; a gas feed-in channel forming a channel through which the preset peocess gas injected into the said process chamber passes, and one end of which is partly inserted into and coupled with the said gas feed-in assembly block and the said gas gas feed-in channel comprises at least one area in which the clearance between the said first gas feed-in assembly block and the said gas feed-in channel is closed and the said gas feed-in channel is coupled with the first gas feed-in assembly block; and a first distortion absorption part formed in at least one of the first gas feed-in assembly block and the said gas feed-in channel and allowing the gas feed-in channel ralatively move ralative to the first gas feed-in assembly block to absorb the distortion of the said gas feed-in channel.
Description
Technical field
The present invention relates to a kind of chemical vapor deposition unit, and more particularly relate to a kind of chemical vapor deposition unit that prevents that when carrying out deposition and purification process gas feed-in pipeline (gas feedthroughpipe) is out of shape and damages owing to treatment chamber internal pressure and temperature change.
Background technology
When making flat-panel monitor and semi-conductor, chemical vapor deposition unit deposits the insulation layer of (amorphous) crystalline silicon for example or silicon compound by using chemical gaseous phase depositing process on flat-panel monitor and semiconductor wafer.
Therefore, the manufacturers that makes flat-panel monitor or semiconductor wafer can use chemical vapor deposition unit.The chemical vapor deposition unit that hereinafter explanation is used for flat-panel monitor.
Flat-panel monitor has been widely used in the watch-dog of personal digital assistant, TV, computer etc.
The type of flat-panel monitor comprise liquid-crystal display (Liquid Crystal Display, LCD), Plasmia indicating panel (Plasma Display Panel, PDP), Organic Light Emitting Diode (Organic LightEmitting Diode, OLED) etc.
Wherein, LCD has liquid crystal and injects structure between two thin substrates (that is, top and bottom glass substrate) as the intermediate between solid and the liquid.LCD is to use the element of optics switching phenomenon, wherein changes the aligning of liquid crystal molecule by the voltage difference between the electrode in the glass substrate of use upper and lower, and is bright and dark to produce, so display graphics or image.
LCD has been widely used in the scope of speed marker from electronic product (for example, Die elektrische Zeituhr, electronic calculator, TV or notebook) to automobile and aircraft and operating system.
In the past, usually LCD TV is of a size of 20 to 30 inches and watch-dog and is of a size of 17 inches or littler.Than small LCD TV and watch-dog, human consumer more preference is of a size of 40 inches or bigger large LCD TV and is of a size of 20 inches or bigger large-scale watch-dog yet in recent years.
Thus, LCD manufacturers makes wide glass substrate.Current, the size with glass substrate of having gone in for the study be increased to be of a size of 1950 * 2250mm or 1870 * 2200mm the 7th generation glass substrate, or be of a size of 2160 * 2460mm the 8th generation glass substrate.
After LCD stood TFT technology (wherein repeating depositing operation, photoetching process, etch process, chemical vapor deposition method etc.), cell process (wherein top and bottom glass substrate being engaged with each other) and module process, LCD sold as product.
Simultaneously, as one of several technologies, chemical vapor deposition method is to become plasma body by the external high frequency power supply and to have high-octane (amorphous) crystalline silicon or silicon compound ejects and be deposited on technology on the glass substrate from gas distribution plate, hereinafter will describe in detail this technology.This technology is carried out in the treatment chamber of a plurality of structures is installed.
When carrying out chemical vapor deposition method in treatment chamber, (amorphous) crystalline silicon or silicon compound not only are deposited on the upper surface of glass substrate, and are deposited on the inwall of treatment chamber and in the treatment chamber on the surface of structure, therefore form resistates.
Because resistates may make the performance degradation of product and influence the performance of glass substrate unfriendly, therefore need regularly to purify accumulate on the treatment chamber inwall and treatment chamber in the lip-deep resistates of structure.
Fig. 1 is the cross-sectional view of explanation according to a zone of the gas feed-in pipeline of the chemical vapor deposition unit of prior art.
As shown in Figure 1, in chemical vapor deposition unit 100,, one remote plasma source 180, manifold 182 and gas feed-in pipeline 120 are coupled to treatment chamber 110 for the resistates in the purifying treatment chamber 110 according to correlation technique.
One remote plasma source 180 and manifold 182 supply Purge gas (NF for example
3) producing plasma body and free radical (being called scavenging material), and plasma body and free radical are provided to treatment chamber 110, make that the resistates in plasma body and free radical and the treatment chamber 110 reacts with generation purification work.
Gas feed-in pipeline 120 forms a passage, by described passage Purge gas is injected in the treatment chamber 110, and gas feed-in pipeline 120 is formed by stupalith (insulating material).Gas feed-in pipeline 120 is through installing so that an end of gas feed-in pipeline 120 is coupled to manifold 182 and treatment chamber 110, and gas feed-in pipeline 120 is through fixing and do not have mobile space, thereby can not leak Purge gas.
In aforesaid method, will be injected into the treatment chamber 110 by gas feed-in pipeline 120 from the Purge gas of one remote plasma source 180 and manifold 182 supplies, and carry out purification process, make the internal state of treatment chamber 110 become vacuum state.After purification process was finished, treatment chamber 110 was discharged Purge gas, and the internal state of treatment chamber 110 becomes atmospheric pressure state from vacuum state simultaneously.So, become atmospheric pressure state simultaneously from vacuum state at the internal state of treatment chamber 110, the instantaneous increase of the internal pressure of treatment chamber 110, that is, and the instantaneous change of the internal pressure of treatment chamber 110.For this reason, the internal structure of treatment chamber 110 may be owing to the cause of pressure change is out of shape.In particular, when the internal state of treatment chamber 110 becomes vacuum state and atmospheric pressure state, if the backing plate (backing plate) 116 as upper electrode sink, be coupled to gas feed-in pipeline 120 distortion of treatment chamber 110 so on the direction shown in the arrow.
In addition, during chemical vapor deposition method, the internal state of treatment chamber 110 becomes the high temperature and high pressure state, and the temperature of treatment chamber 110 and backing plate 116 increases.At this moment, if the thermal expansion owing to the cause of temperature increase of treatment chamber 110 and backing plate 116, gas feed-in pipeline 120 also can thermal expansion and distortion so.
Yet, in chemical vapor deposition unit according to correlation technique, because gas feed-in pipeline 120 is fixed to manifold 182 and treatment chamber 110, when therefore the internal state of treatment chamber 110 becomes vacuum state or atmospheric pressure state during deposition and purification process, or when the temperature of treatment chamber 110 increased, gas feed-in pipeline 120 was not removable.Thus, gas feed-in pipeline 120 damages, and process gas is penetrated in the gap of gas feed-in pipeline 120, therefore reduces the stability of depositing operation.
Summary of the invention
The purpose of this invention is to provide a kind of chemical vapor deposition unit, it can prevent that gas feed-in pipeline is out of shape owing to the cause of the internal pressure of treatment chamber and temperature change and damages during deposition and purification process, and can assemble and install described gas feed-in pipeline easily.
Additional advantage of the present invention, purpose and feature will be in description subsequently part be stated that and part will become apparent, and perhaps can be understood from the practice of the present invention after one of ordinary skill in the art consult following content.
According to an aspect of the present invention, provide a kind of chemical vapor deposition unit, it comprises: the first gas feed-in subassembly block (first gas feedthrough assembly block), and it is coupled to treatment chamber; Gas feed-in pipeline, it forms predetermined process gas and is injected into the passage that is passed through in the described treatment chamber, and one end parts ground inserts and is coupled to the described first gas feed-in subassembly block, and described gas feed-in pipeline has at least one zone, and the sealed and described gas feed-in pipeline in the gap in the described zone between described first gas feed-in subassembly block and described gas feed-in pipeline is coupled to the described first gas feed-in subassembly block; And first the distortion absorption portion, it is ducted at least one that it is formed on the described first gas feed-in subassembly block and described gas feed-in, and allow described gas feed-in pipeline to relatively move, to absorb the distortion of described gas feed-in pipeline with respect to the described first gas feed-in subassembly block.
The described first distortion absorption portion can be formed by inclined surface, and described inclined surface forms at least one inclination in the outer wall of the described gas feed-in pipeline at the inwall of the described first gas feed-in subassembly block and the coupling regime place between described first gas feed-in subassembly block and described gas feed-in pipeline.
Described inclined surface can be formed on the described inwall of the described first gas feed-in subassembly block.
The O shape ring of the gap gas-tight seal between described first gas feed-in subassembly block and the described gas feed-in pipeline can be plugged in sealed described at least one zone, described gap, and described inclined surface can be formed in the upper area and in the lower region each of described inwall of the described first gas feed-in subassembly block, and wherein said O shape ring is plugged between upper area and the lower region.
Described inclined surface can comprise: first inclination interval (first inclined interval), it is in the mode that the cross section of described first inclination interval increases to the opening of the described first gas feed-in subassembly block gradually from the zone of described O shape loop mapping, is formed in the upper area of described inwall of the described first gas feed-in subassembly block; And second inclination interval, its with the cross section of described second inclination interval from the zone of described O shape loop mapping to the mode that the side of described treatment chamber increases gradually, be formed in the lower region of described inwall of the described first gas feed-in subassembly block.
Described inclined surface can further comprise the 3rd inclination interval, described the 3rd inclination interval is laterally inclined to described gas feed-in pipeline from position that described second inclination interval finishes, and the corner regions corresponding to described the 3rd inclination interval of described gas feed-in pipeline (corner region) is processed into inclination, makes to reduce gradually under the outer radial of described corner regions.
Chemical vapor deposition unit according to one aspect of the invention can further comprise guard ring, and it is arranged on and is adjacent to described O shape ring and prevents that described O shape ring is owing to the cause of described process gas is corroded.
Described guard ring can have the U-shaped shape, and can be arranged in described second inclination interval, makes the bossing of described guard ring contact with the outer wall formation of described gas feed-in pipeline.
Described O shape loop section is imbedded first groove that is formed in described first inclination interval; described guard ring is partly imbedded in second groove that is formed on described second inclination interval, so that described O shape ring and described guard ring are with respect to the described inwall of the described first gas feed-in subassembly block and part is given prominence to.
Described process gas can be NF
3Gas, it purifies the internal portion of described treatment chamber.
Chemical vapor deposition unit according to one aspect of the invention can further comprise: manifold, and it is fed to described gas feed-in pipeline with described process gas; The second gas feed-in subassembly block, it is coupled to described manifold, and the other end of described gas feed-in pipeline partly inserts and is coupled to the described second gas feed-in subassembly block; And second the distortion absorption portion, it is ducted at least one that it is formed on the described second gas feed-in subassembly block and described gas feed-in, and allow described gas feed-in pipeline to relatively move, so that absorb the distortion of described gas feed-in pipeline with respect to the described second gas feed-in subassembly block.
According to a further aspect in the invention, provide a kind of chemical vapor deposition unit, it comprises: gas feed-in subassembly block, and it is coupled to the manifold of supply process gas; Gas feed-in pipeline, it forms predetermined process gas and is injected into the passage that is passed through in the described treatment chamber, and described gas feed-in subassembly block is inserted and be coupled to the one end parts, and described gas feed-in pipeline has at least one zone, and the sealed and described gas feed-in pipeline in the gap in the described zone between described gas feed-in subassembly block and described gas feed-in pipeline is coupled to described gas feed-in subassembly block; And distortion absorption portion, it is ducted at least one that it is formed on described gas feed-in subassembly block and described gas feed-in, and allow described gas feed-in pipeline to relatively move, to absorb the distortion of described gas feed-in pipeline with respect to described gas feed-in subassembly block.
Description of drawings
Above and other objects of the present invention, feature and advantage will be more apparent from the detailed description of hereinafter making in conjunction with the accompanying drawings, wherein:
Fig. 1 is the cross-sectional view of explanation according to the gas feed-in conduit region of the chemical vapor deposition unit of correlation technique.
Fig. 2 is the cross-sectional view of explanation chemical vapor deposition unit of one exemplary embodiment according to the present invention.
Fig. 3 is the amplification cross-sectional view in explanation " A " shown in Figure 2 zone.
Fig. 4 is that the part of Fig. 3 is amplified exploded cross section views.
Fig. 5 is the amplification cross-sectional view in explanatory view 4 " B " zone, the action of its explanation O shape ring and guard ring.
Fig. 6 is the figure of arrangement states of the gas feed-in pipeline of the explanation first gas feed-in subassembly block to Fig. 8.
Embodiment
Hereinafter, will describe the preferred embodiments of the present invention in detail referring to accompanying drawing.By will understand aspect of the present invention and feature and the method that realizes described aspect and feature with reference to the embodiment that describes in detail referring to accompanying drawing.Yet, the embodiment that the invention is not restricted to hereinafter disclose, but can different forms implement.The content that defines in the description, for example detailed structure and element be the specific detail for helping the present invention of one of ordinary skill in the art's complete understanding to provide, and the present invention only are defined in the appended claims scope.In whole description of the present invention, identical graphic reference number is used for components identical in each figure.
As mentioned above, hereinafter the flat-panel monitor of describing be can be liquid-crystal display (Liquid CrystalDisplay, LCD), Plasmia indicating panel (Plasma Display Panel, PDP) and Organic Light Emitting Diode (Organic Light Emitting Diode, a kind of in OLED).
Yet, in the present embodiment, suppose that the large glass substrate that is used for LCD is a flat-panel monitor.In addition, as mentioned above, the large glass substrate be meant have corresponding to the 7th generation or the 8th generation glass substrate the glass substrate of size.
Fig. 2 is the cross-sectional view of explanation chemical vapor deposition unit of one exemplary embodiment according to the present invention.
As shown in Figure 2, the chemical vapor deposition unit 1 of one exemplary embodiment comprises according to the present invention: treatment chamber 10; Pedestal (susceptor) 50; It is provided in the treatment chamber 10 and loads glass substrate G, the backing plate 16 that becomes the deposition target; It is supported on the chamber upper wall 8 that is formed in treatment chamber 10 upper areas and as upper electrode and gas distribution plate 17, is provided at backing plate 16 belows and deposition material is assigned to glass substrate G.
In addition, chemical vapor deposition unit 1 according to present embodiment further comprises: one remote plasma source 80, and its supply process gas is so that remove when depositing operation is finished by unnecessarily deposit the resistates that described deposition material forms on treatment chamber 10 inwalls with on a plurality of structures that are provided in the treatment chamber 10; Manifold 82, it is coupled to one remote plasma source 80 and process gas is fed to treatment chamber 10; And gas feed-in subassembly 90, the inside that it is coupled to manifold 82 and treatment chamber 10 and process gas is fed to treatment chamber 10.At this moment, process gas is meant the NF that is used for purifying the deposition material that remains in treatment chamber 10
3Gas, that is, and in order to the Purge gas of coming purifying treatment chamber 10 inside by the generation scavenging material.
In treatment chamber 10, the external isolation of its outer wall and treatment chamber 10 makes the inside deposition space S can maintain vacuum atmosphere.In order steadily to carry out depositing operation, rare gas element He and Ar are filled in the deposition space S of treatment chamber 10.
Through hole (through-hole) 10b (post 52 of pedestal 50 passes wherein) is formed in the central zone of lower surface 11 of treatment chamber 10.
Pedestal 50 comprises: substrate loading station 51, its support are arranged on the horizontal direction among the deposition space S of treatment chamber 10 and the glass substrate G that is loaded; And post 52, its upper end be fixed on substrate loading station 51 in the heart, and the lower end is passed through hole 10b and is arranged on treatment chamber 10 outsides.
The upper surface of substrate loading station 51 manufactures the surface plate shape, makes glass substrate G horizontality accurately to be loaded on the upper surface of substrate loading station 51.Well heater (not shown) is installed in the substrate loading station 51 and with about 400 ℃ predetermined depositing temperature heated substrate loading station 51.
Pedestal 50 rises in the deposition space S of treatment chamber 10 and descends.That is, when glass substrate G was loaded on the upper surface of substrate loading station 51, pedestal 50 was arranged in the zone of lower surface 11 of treatment chamber 10.Then, when glass substrate G was loaded on the upper surface of substrate loading station 51 and carries out depositing operation, pedestal 50 rose, and makes glass substrate G be adjacent to gas distribution plate 17.For instance, when carrying out depositing operation, the substrate loading station 51 of pedestal 50 rises to and the lower surface of gas distribution plate 17 position at a distance of tens millimeters.
For reaching this purpose, in the post 52 of pedestal 50, provide the hoisting module (elevating module) 56 that pedestal 50 is moved up and down.Pedestal 50 rises and descends by hoisting module 56.
In order not form the space between the post 52 of pedestal 50 and the through hole 10b during the process that rises and descend by hoisting module 56 at pedestal 50, around through hole 10b, provide corrugated tube (bellow) 54, so that center on the outside of post 52.Corrugated tube 54 expands when pedestal 50 descends and is compressed when pedestal 50 rises.Thus, corrugated tube 54 prevents to form the space between post 52 and through hole 10b.
A plurality of pickers (lift pin) 58 are provided in the substrate loading station 51 of pedestal 50.The lower surface of that described a plurality of picker 58 stable support are loaded or the glass substrate G that takes out, and glass substrate G is directed to the upper surface of substrate loading station 51.Picker 58 is mounted to and passes substrate loading station 51.
When pedestal 50 descended by hoisting module 56, the lower end of picker 58 was pressed into the lower surface 11 of treatment chamber 10, and the upper end of picker 58 is projected into the upper surface of substrate loading station 51.Thus, picker 58 makes glass substrate G and substrate loading station 51 spaced apart.On the contrary, when pedestal 50 rose, picker 58 descended and makes glass substrate G close attachment in the upper surface of substrate loading station 51.
Picker 58 makes mechanical manipulator (robot arm) (not shown) can grasp the glass substrate G on the substrate loading station 51 that is loaded in pedestal 50 in order to form the space between glass substrate G and substrate loading station 51.
Distribute the gas distribution plate 17 of reactant gases to have the more heavy amount of about 400kg.During depositing operation, gas distribution plate 17 is heated and is in about 200 ℃ temperature, is in about 400 ℃ temperature because pedestal 50 is heated.
A plurality of apertures (orifice) (not shown) are formed on the plate surface of gas distribution plate 17.The reactant gases of the gas inlet supply by backing plate 16 passes compartment part (not shown) and can be assigned to the inside of treatment chamber 10 by described a plurality of apertures.Gas distribution plate 17 is supported with hang by suspension strut parts 45.
As mentioned above, when repeating depositing operation, deposition material is deposited on the surface of other structure in the inwall of treatment chamber 10 or the treatment chamber 10 and on the glass substrate G, therefore forms resistates.If do not remove this resistates, quality product will be degenerated owing to resistates, and influences the performance of glass substrate G unfriendly.
Therefore, need regularly to purify the resistates that (removing) forms when deposition material is deposited on the surface of other structure in the inwall of treatment chamber 10 or the treatment chamber 10.
For reaching this purpose, one remote plasma source 80 circularly purifying gas NF
3To produce plasma body and free radical (being called scavenging material).Plasma body and free radical are injected in the treatment chamber 10 by the gas feed-in pipeline 20 that is connected to manifold 82, make that the resistates in plasma body and free radical and the treatment chamber 10 reacts, so that carry out purification work.
When Purge gas was injected in the treatment chamber 10 by gas feed-in pipeline 20 and carries out purification work, the internal state of treatment chamber 10 became atmospheric pressure state from vacuum state, and the instantaneous increase of the internal pressure of treatment chamber 10.Thus, the instantaneous change of the pressure of treatment chamber 10.
When the backing plate 16 as upper electrode sank owing to pressure change, the gas feed-in pipeline 20 that is coupled to treatment chamber 10 may be out of shape.
In addition, during chemical vapor deposition method, the internal state of treatment chamber 10 becomes high-temperature high-pressure state, and the temperature of treatment chamber 10 and backing plate 16 increases.If treatment chamber 10 and backing plate 16 are because temperature increases and thermal expansion, gas feed-in pipeline 20 may be owing to described thermal expansion is out of shape so.
Yet in the chemical vapor deposition unit according to correlation technique, gas feed-in pipeline 20 is fixed to manifold 82 and treatment chamber 10.When the internal state of treatment chamber 10 during deposition and purification process became in vacuum state and atmospheric pressure state or the treatment chamber 10 the temperature increase, gas feed-in pipeline 20 was not removable.Therefore, gas feed-in pipeline 20 and treatment chamber 10 are damaged, and thus, process gas is penetrated in the gap of gas feed-in pipeline 20, and this reduces the stability of depositing operation, (referring to Fig. 1) as indicated above.
For head it off, the chemical vapor deposition unit 1 of one exemplary embodiment comprises the gas feed-in subassembly 90 with following structure according to the present invention, and described structure is that gas feed-in pipeline 20 can be with respect to the first and second gas feed-in subassembly blocks 30 and 31 and relatively move.
Fig. 3 is the amplification cross-sectional view in explanatory view 2 " A " zone, and Fig. 4 is that the part of Fig. 3 is amplified exploded cross section views, and Fig. 5 is the amplification cross-sectional view in explanatory view 4 " B " zone, the action of its explanation O shape ring and guard ring.
As shown in the figure, gas feed-in subassembly 90 comprises: the first gas feed-in subassembly block 30, and it is coupled to treatment chamber 10; The second gas feed-in subassembly block 31, it is coupled to manifold 82; And gas feed-in pipeline 20, one end ground part is inserted and is coupling in the first gas feed-in subassembly block 30, and the other end partly inserts and is coupling in the second gas feed-in subassembly block 31.In the coupling regime between gas feed-in pipeline 20 and the first and second gas feed-in subassembly blocks 30 and 31, provide the first distortion absorption portion 23 and the second distortion absorption portion 23a respectively, it allows gas feed-in pipeline 20 to relatively move.In addition, at least one gap in the gap in the sealing coupling regime.
As shown in Figure 3, the first distortion absorption portion 23 makes (for example works as gas feed-in pipeline 20 displacement predetermined angle theta, from angle based on 1 ° of the starting position of the first gas feed-in subassembly block 30 displacement) time, the position that an end that is positioned at the second gas feed-in subassembly block, 31 places of gas feed-in pipeline 20 block coupling units 22 moves to displacement predetermined distance L (for example, the distance of about 5mm) to the left side or the right side of starting position.
The first distortion absorption portion 23 can be formed by inclined surface 35, and inclined surface 35 is formed on in the outer wall of the inwall of the first gas feed-in subassembly block 30 and the second gas feed-in pipeline 20 at least one.
In the present embodiment, provide the description that inclined surface 35 is formed on the inwall of the first gas feed-in subassembly block 30 and forms the situation of the first distortion absorption portion 23 when the first gas feed-in subassembly block 30 and gas feed-in pipeline 20 are coupled to each other.
In addition, in the present embodiment, the first and second gas feed-in subassembly blocks 30 are identical with 31 26S Proteasome Structure and Function, and the 26S Proteasome Structure and Function of the first and second distortion absorption portion 23 and 23a is identical, and just the coupling position between it differs from one another.Description to the second gas feed-in subassembly block 31 and the second distortion absorption portion 23a is replaced by the description to the first gas feed-in subassembly block 30 and the first distortion absorption portion 23.
As Fig. 4 detail display, a side of the first gas feed-in subassembly block 30 is coupled to treatment chamber 10, and gas feed-in pipeline 20 has hollow shape, makes to insert the first gas feed-in subassembly block 30, and forms process gas and inject passage in it.As the main material of the pottery of insulating material as the first gas feed-in subassembly block 30.
Gas feed-in pipeline 20 contained gas feed-in main bodys (gas feedthrough main body) 21 and block coupling unit 22, block coupling unit 22 forms an end of gas feed-in pipeline 20 and is coupled to the first gas feed-in subassembly block 30.
In addition, the corner regions of block coupling unit 22 tilts.If the corner regions of block coupling unit 22 is processed into inclination, when gas feed-in pipeline 20 moved to the first gas feed-in subassembly block, 30 inside, gas feed-in pipeline 20 can steadily move in the first distortion absorption portion 23 so.
Gas feed-in pipeline 20 has tubular form and forms the passage of process gas, and equally with the first gas feed-in subassembly block 30 is also formed by stupalith.
When the first gas feed-in subassembly block 30 and gas feed-in pipeline 20 are coupled to each other, O shape ring 60 is plugged between the first gas feed-in subassembly block 30 and the gas feed-in pipeline 20, so that seal the gap between the first gas feed-in subassembly block 30 and the gas feed-in pipeline 20.
Consider the gap between block coupling unit 22 and the first gas feed-in subassembly block, 30 inwalls, O shape ring 60 forms suitable shape to have predetermined elastic force, makes O shape encircle 60 collapsible and expansions.
The inclined surface 35 that forms the first distortion absorption portion 23 is divided into the first inclination interval 35a, the second inclination interval 35b and the 3rd inclination interval 35c, and it respectively has different inclinations.
60 positioned area are encircled from O shape in the cross section of the first inclination interval 35a to be increased gradually to the opening of the first gas feed-in subassembly block 30.
The second tilting zone 35b is formed in the lower region of inwall of the first gas feed-in subassembly block 30, and its cross section is encircled 60 positioned area from O shape and increased gradually to the side of treatment chamber 10.
In addition, guard ring 70 prevents that O shape ring 60 is owing to the cause of process gas is corroded.
In the present embodiment, as Fig. 5 shows in detail, guard ring 70 has the U-shaped cross section.Bossing forms with the outer wall of gas feed-in pipeline 20 and contacts, and guard ring 70 protection O shape ring 60 by the elastic force pucker ﹠ bloat time.
The 3rd inclination interval 35c is laterally inclined to the gas feed-in pipeline 20 that is in the position that the second inclination interval 35b finishes.This is because the corner regions corresponding to the 3rd inclination interval 35c of gas feed-in pipeline 20 is processed into inclination, as mentioned above.Therefore, when gas feed-in pipeline 20 moved to the first gas feed-in subassembly block 30, by the 3rd inclination interval 35c, gas feed-in pipeline 20 can steadily move and can not damage the corner regions of gas feed-in pipeline 20.
So, when the block coupling unit 22 of gas feed-in pipeline 20 was coupled to the inwall of the first gas feed-in subassembly block 30 by being provided at inclined surface 35 on the first gas feed-in subassembly block, 30 inwalls, the first distortion absorption portion 23 was formed in the coupling regime.
That is, the first distortion absorption portion 23 is provided in the gap that forms when the inclined surface 35 with the first inclination interval 35a, the second inclination interval 35b and the 3rd inclination interval 35c is coupled to block coupling unit 22.By the first distortion absorption portion 23, gas feed-in pipeline 20 can relatively move on all directions with respect to the first gas feed-in subassembly block 30.
As mentioned above, make the gap sealed O shape ring 60 of the first distortion absorption portion 23 and guard ring 70 coupled to each other in the gas feed-in pipeline 20 that can move and at least one zone in the first gas feed-in subassembly block, 30 inwalls by the first distortion absorption portion 23.
As Fig. 5 shows in detail, when block coupling unit 22 moved to the first distortion absorption portion 23, the shape and the position of O shape ring 60 and guard ring 70 changed.That is, although O shape is encircled 60 shape from the round-shaped elliptical shape that becomes, O shape ring 60 gaps that still seal in the block coupling unit 22 and the first gas feed-in subassembly block 30.When guard ring 70 in second groove 37 during pucker ﹠ bloat, the gap in the guard ring 70 sealing block coupling units 22 and the first gas feed-in subassembly block 30.
Therefore, because therefore O shape ring 60 and the guard ring 70 salable gaps that produced by the gas feed-in pipeline 20 that moves in the first distortion absorption portion 23 can prevent that process gas from leaking into the outside.In addition, because guard ring 70 is arranged on the position that can prevent fundamentally that process gas from leaking, can prevent that therefore process gas is penetrated in the O shape ring 60 and corrodes O shape ring 60.
So, when carrying out deposition and purification process, can prevent in advance that gas feed-in pipeline 20 is owing to the cause of pressure change in the treatment chamber 10 or temperature increase is damaged.
In addition, compare as correlation technique, the gas feed-in pipeline 20 and the first gas feed-in subassembly block 30 can be assembled and install easily.
In addition; chemical vapor deposition unit contained gas feed-in pipeline 20 and the O shape ring 60 and the guard ring 70 that are provided in the first gas feed-in subassembly block 30; even and therefore gas feed-in pipeline 20 moves also and can prevent that process gas from leaking by the first distortion absorption portion 23, this has realized the stability of depositing operation.
Function according to the chemical vapor deposition unit of present embodiment hereinafter will be described.
Fig. 6 to 8 is figure that the arrangement states of the gas feed-in pipeline that is used for the first gas feed-in subassembly block is described.
When the Purge gas from one remote plasma source 80 and manifold 82 supplies was injected in the treatment chamber 10 by gas feed-in pipeline 20 and carries out purification process, the internal state of treatment chamber 10 became vacuum state.After purification process was finished, treatment chamber 10 was discharged Purge gas.At this moment, the internal state of treatment chamber 10 changes atmospheric pressure state into from vacuum state.Be similar to this, at the internal state of treatment chamber 10 when vacuum state becomes atmospheric pressure state, the instantaneous increase of the internal pressure of treatment chamber 10.Thus, treatment chamber 10 stands instantaneous pressure change.
As shown in FIGS. 6 to 8, the internal pressure of treatment chamber 10 and temperature change, and therefore backing plate 16 or analogue sink or thermal expansion.In the case, gas feed-in pipeline 20 is out of shape because of the first gas feed-in subassembly block 30.
At this moment, in the present embodiment, gas feed-in pipeline 20 can move on all directions to be set to predetermined angle theta with initial bit with respect to the first gas feed-in subassembly block 30.
Promptly, when using inclined surface 35 to be installed in the distortion of first in the first gas feed-in subassembly block 30 absorption portion 23 in advance gas feed-in pipeline 20 is moved, one side close attachment of block coupling unit 22 is in the first inclination interval 35a, and the corner regions close attachment of block coupling unit 22 is in the second inclination interval 35b and the 3rd inclination interval 35c.
Therefore, can solve hard-wired gas feed-in pipeline 20 not removable and gas feed-in pipeline 20 and treatment chamber 10 impaired problems in the correlation technique.
In addition; O shape on being installed in the first gas feed-in subassembly block, 30 inwalls ring 60 and guard ring 70 be according to the change of gas feed-in pipeline 20 and during pucker ﹠ bloat, the gap between O shape ring 60 and guard ring 70 sealing first gas feed-in subassembly blocks 30 and the gas feed-in pipeline 20.Therefore, can prevent that process gas from leaking, this has realized the stability of depositing operation.
In the above-described embodiments, provide the first distortion absorption portion 23 and the second distortion absorption portion 23a.Yet,, can only form the first distortion absorption portion 23 so if gas feed-in pipeline 20 can relatively move with respect to gas feed-in subassembly block by the first distortion absorption portion 23.
As mentioned above, chemical vapor deposition unit according to the present invention produces following effect.
Because gas feed-in pipeline can prevent when relatively moving process gas and leak, therefore can prevent gas feed-in pipeline since carry out deposit and during purification process the cause of the internal pressure of treatment chamber and temperature change be out of shape and damage.In addition, compare with correlation technique, gas feed-in pipeline can easily be assembled and install.
One of ordinary skill in the art should be appreciated that, under the situation that does not break away from the spirit and scope of the present invention that appended claims defines, can make various replacements, modification and change on form and the details therein.Therefore, should be appreciated that the foregoing description is only for purpose of explanation, and should not be construed as limitation of the present invention.
Claims (12)
1. chemical vapor deposition unit, it is characterized in that: it comprises:
The first gas feed-in subassembly block, it is coupled to treatment chamber;
Gas feed-in pipeline, it forms predetermined process gas and is injected into the passage that is passed through in the described treatment chamber, and one end parts ground inserts and is coupled to the described first gas feed-in subassembly block, and described gas feed-in pipeline has at least one zone, and the sealed and described gas feed-in pipeline in the gap in the described zone between described first gas feed-in subassembly block and described gas feed-in pipeline is coupled to the described first gas feed-in subassembly block; And
The first distortion absorption portion, it is ducted at least one that it is formed on the described first gas feed-in subassembly block and described gas feed-in, and allow described gas feed-in pipeline to relatively move, to absorb the distortion of described gas feed-in pipeline with respect to the described first gas feed-in subassembly block.
2. chemical vapor deposition unit according to claim 1, it is characterized in that the described first distortion absorption portion is formed by inclined surface, described inclined surface forms at least one inclination in the outer wall of the described gas feed-in pipeline at the inwall of the described first gas feed-in subassembly block and the coupling regime place between described first gas feed-in subassembly block and described gas feed-in pipeline.
3. chemical vapor deposition unit according to claim 2 is characterized in that described inclined surface is formed on the described inwall of the described first gas feed-in subassembly block.
4. chemical vapor deposition unit according to claim 3, it is characterized in that, the O shape ring of the gap gas-tight seal between described first gas feed-in subassembly block and the described gas feed-in pipeline is plugged in sealed described at least one zone, described gap, and described inclined surface is formed in the upper area and in the lower region each of described inwall of the described first gas feed-in subassembly block, and wherein said O shape ring is plugged between described upper area and the lower region.
5. chemical vapor deposition unit according to claim 4 is characterized in that described inclined surface comprises:
First inclination interval, it is in the mode that the cross section of described first inclination interval increases to the opening of the described first gas feed-in subassembly block gradually from the zone of described O shape loop mapping, is formed in the described upper area of described inwall of the described first gas feed-in subassembly block; And
Second inclination interval, its with the cross section of described second inclination interval from the zone of described O shape loop mapping to the mode that the side of described treatment chamber increases gradually, be formed in the described lower region of described inwall of the described first gas feed-in subassembly block.
6. chemical vapor deposition unit according to claim 5, it is characterized in that described inclined surface further comprises the 3rd inclination interval, described the 3rd inclination interval is laterally inclined to described gas feed-in pipeline from position that described second inclination interval finishes, and described gas feed-in pipeline is processed into inclination corresponding to the corner regions of described the 3rd inclination interval, makes to reduce gradually under the outer radial of described corner regions.
7. chemical vapor deposition unit according to claim 5 is characterized in that it further comprises:
Guard ring, it is arranged on and is adjacent to described O shape ring and prevents that described O shape ring is owing to the cause of described process gas is corroded.
8. chemical vapor deposition unit according to claim 7 is characterized in that described guard ring has the U-shaped shape, and is arranged in described second inclination interval, makes the bossing of described guard ring contact with the outer wall formation of described gas feed-in pipeline.
9. chemical vapor deposition unit according to claim 8; it is characterized in that: described O shape loop section is imbedded first groove that is formed in described first inclination interval; described guard ring is partly imbedded in second groove that is formed on described second inclination interval, so that described O shape ring and described guard ring are with respect to the described inwall of the described first gas feed-in subassembly block and part is given prominence to.
10. chemical vapor deposition unit according to claim 1 is characterized in that described process gas is a NF3 gas, and it purifies the internal portion of described treatment chamber.
11. chemical vapor deposition unit according to claim 1 is characterized in that it further comprises:
Manifold, it is fed to described gas feed-in pipeline with described process gas;
The second gas feed-in subassembly block, it is coupled to described manifold, and the other end of described gas feed-in pipeline partly inserts and is coupled to the described second gas feed-in subassembly block; And
The second distortion absorption portion, it is ducted at least one that it is formed on the described second gas feed-in subassembly block and described gas feed-in, and allow described gas feed-in pipeline to relatively move, so that absorb the distortion of described gas feed-in pipeline with respect to the described second gas feed-in subassembly block.
12. a chemical vapor deposition unit is characterized in that it comprises:
Gas feed-in subassembly block, it is coupled to the manifold of supply process gas;
Gas feed-in pipeline, it forms predetermined process gas and is injected into the passage that is passed through in the described treatment chamber, and one end parts ground inserts and is coupled to described gas feed-in subassembly block, and described gas feed-in pipeline has at least one zone, and the sealed and described gas feed-in pipeline in the gap in the described zone between described gas feed-in subassembly block and described gas feed-in pipeline is coupled to described gas feed-in subassembly block; And
The distortion absorption portion, it is ducted at least one that it is formed on described gas feed-in subassembly block and described gas feed-in, and allow described gas feed-in pipeline to relatively move, to absorb the distortion of described gas feed-in pipeline with respect to described gas feed-in subassembly block.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060073506A KR100757356B1 (en) | 2006-08-03 | 2006-08-03 | Chemical vapor deposition apparatus |
| KR10-2006-0073506 | 2006-08-03 | ||
| KR1020060073506 | 2006-08-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101126155A CN101126155A (en) | 2008-02-20 |
| CN101126155B true CN101126155B (en) | 2011-06-22 |
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ID=38737267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101299716A Expired - Fee Related CN101126155B (en) | 2006-08-03 | 2007-07-20 | Chemical vapor deposition apparatus |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR100757356B1 (en) |
| CN (1) | CN101126155B (en) |
| TW (1) | TWI365921B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101019530B1 (en) * | 2008-05-29 | 2011-03-09 | 주식회사 에스에프에이 | Chemical vapor deposition apparatus |
| TW201311926A (en) * | 2011-09-05 | 2013-03-16 | Sfa Engineering Corp | Chemical vapor deposition apparatus for flat display |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5704984A (en) * | 1995-12-18 | 1998-01-06 | Samsung Electronics Co., Ltd. | Chemical vapor deposition apparatus with a heat radiation structure |
| CN1628368A (en) * | 2002-02-08 | 2005-06-15 | 艾克塞利斯技术公司 | Reactor assembly and processing method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4906171A (en) * | 1988-06-17 | 1990-03-06 | Gencorp Inc. | Directed flow die assembly |
| JPH07174273A (en) * | 1993-12-17 | 1995-07-11 | Yukio Itagaki | Universal joint for pipe |
| KR100541559B1 (en) | 2004-01-29 | 2006-01-11 | 삼성전자주식회사 | Batch-type deposition apparatus having a gland portion |
-
2006
- 2006-08-03 KR KR1020060073506A patent/KR100757356B1/en not_active IP Right Cessation
-
2007
- 2007-07-20 CN CN2007101299716A patent/CN101126155B/en not_active Expired - Fee Related
- 2007-07-23 TW TW096126777A patent/TWI365921B/en not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5704984A (en) * | 1995-12-18 | 1998-01-06 | Samsung Electronics Co., Ltd. | Chemical vapor deposition apparatus with a heat radiation structure |
| CN1628368A (en) * | 2002-02-08 | 2005-06-15 | 艾克塞利斯技术公司 | Reactor assembly and processing method |
Non-Patent Citations (1)
| Title |
|---|
| JP特开7-174273A 1995.07.11 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200808999A (en) | 2008-02-16 |
| TWI365921B (en) | 2012-06-11 |
| KR100757356B1 (en) | 2007-09-11 |
| CN101126155A (en) | 2008-02-20 |
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