KR20150055822A - Chemical Vapor Deposition Apparatus for Flat Display - Google Patents

Abstract

Disclosed is a chemical vapor deposition apparatus for a flat panel display. According to an embodiment of the present invention, the chemical vapor deposition apparatus for the flat panel display comprises: a diffuser arranged in a chamber in which a deposition process progresses to a glass substrate for the flat panel display, and forming a plurality of penetration holes which provide deposition materials to surfaces of the glass substrate; a backing plate forming a buffer space between gas distributing plates, and arranged in parallel with the gas distributing plates in an upper area of the gas distributing plate; and an anti-deflection and RF power supply unit connected to the gas distributing plate, preventing deflection of the gas distributing plate, and RF (Radio Frequency) supplying power to the gas distributing plate.

Description

[0001] Chemical Vapor Deposition Apparatus for Flat Display [0002]

The present invention relates to a chemical vapor deposition apparatus for a flat display, and more particularly, to a chemical vapor deposition apparatus for a flat display, which can uniformly supply an RF (Radio Frequency) power source to a gas distribution plate, To a chemical vapor deposition apparatus for a flat panel display capable of improving the quality of deposition of a substrate.

Flat displays are widely used in personal computers, monitors for TVs and computers.

Flat displays are various types such as LCD (Liquid Crystal Display), PDP (Plasma Display Panel) and OLED (Organic Light Emitting Diodes).

In particular, an organic light emitting display (OLED) of a flat panel display is a cemented carbide type display device which realizes a color image by self-emission of an organic substance. In view of its simple structure and high light efficiency, Has attracted attention as a display.

Such an organic light emitting display includes an anode, a cathode, and organic layers interposed between the anode and the cathode.

Here, the organic layers include at least a light emitting layer, and in addition to the light emitting layer, a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer are further included.

Further, the organic electroluminescence display device is a cemented carbide thin film display device that realizes a color image by self-emission of organic materials, and has been attracting attention as a promising next-generation flat display because of its simple structure and high optical efficiency.

In order to manufacture such a glass substrate for an organic light emitting display, an inorganic material deposition process and a patterning process for forming a TFT (Thin Film Transistor) are repeatedly performed on a glass substrate, and then an organic material Deposition is achieved.

Typically, an inorganic material deposited on a glass substrate for an organic light emitting display is deposited by a chemical vapor deposition process (CVD). This is because the chemical vapor deposition process is advantageous in forming various thin films.

An organic electroluminescent display (OLED) glass substrate will be briefly described as a CVD (Chemical Vapor Deposition) process, which is one of the deposition processes for manufacturing glass substrates.

A chemical vapor deposition process is a process in which a silicon compound ion having high energy is plasma-emitted by an external high-frequency power source and is ejected from a gas distribution plate through an electrode and deposited on a glass substrate, In a process chamber in which a chemical vapor deposition process is performed.

In recent years, chemical vapor deposition apparatuses having a plurality of process chambers arranged at regular intervals are widely used so that many glass substrates can be processed in a short time.

As shown in FIG. 1, the conventional chemical vapor deposition apparatus 1 'for a flat display has a glass substrate G as a deposition target in a lower region inside a chamber C for performing a chemical vapor deposition process A susceptor 3 having a glass substrate loading part 2 to be loaded is provided.

Inside the chamber 1, a gas distribution plate 4 for distributing a plasma process gas or deposition material to the glass substrate G is provided on the susceptor 3, and a gas distribution plate 4 A backing plate 5 for forming a buffer space S is disposed.

A gas supply unit 8 for supplying a process gas to the buffer space S is provided at an upper portion of the chamber and a high frequency power source unit for supplying a high frequency power to the center of the backing plate 5 9 are provided.

A plurality of susceptor supports 6 are attached to a lower portion of the susceptor 3 to prevent the glass substrate G loaded on the glass substrate loading portion 2 from sagging.

The susceptor 3 and the susceptor support 5 are vertically elevated and lowered by an elevating module (not shown) provided below the susceptor 3 and susceptor support 5.

The glass substrate G is loaded onto the upper surface of the glass substrate loading portion 2 through the glass substrate entrance 7 provided at the side of the chamber 1, do.

In the chemical vapor deposition apparatus for a flat panel display according to the related art as described above, RF power is supplied to the central portion of the backing plate 5 by the connection line 9a.

That is, as shown by the arrows, the RF power supplied to the central portion of the backing plate 5 is transmitted to the gas distribution plate 4 through the rim of the backing plate 5, The electric field intensity varies from the central portion of the backing plate 5 to the gas distribution plate 4 through the rim of the backing plate 5 due to the standing wave effect and the RF power source is uneven from the central portion to the rim portion of the gas distribution plate 4 .

As a result, the plasma density becomes nonuniform from the central portion of the gas distribution plate 4 to the rim portion, and a uniform thin film can not be formed on the glass substrate G. Particularly, There is a problem that the plasma density becomes uneven when the size of the gas distribution plate 4 is increased.

On the other hand, as the glass substrate becomes larger in size, the size of the gas distribution plate for supplying the RF power and supplying the gas is also becoming larger. In such a large-sized gas distribution plate, in the course of the above-described deposition process, the gas distribution plate is not only thermally deformed by heat transfer due to high-temperature heat formed in the chamber, but also can be deformed by its own load.

The sagging phenomenon of the gas distribution plate is further intensified in the central region of the gas distribution plate having both ends fixed, so that the distance from the central region of the gas distribution plate to the susceptor is shortened and the distance from the edge region of the gas distribution plate to the susceptor A phenomenon occurs in which the distance between the first and second electrodes is increased.

If such a phenomenon occurs, the plasma, which is a reactive gas generated from the electrode and distributed through the gas distribution plate, is concentrated and deposited in the central region of the short-distance glass substrate, and the peripheral region of the glass substrate is relatively less deposited The thickness of the deposited film of the glass substrate becomes uneven.

Korea Patent Office Registration No. 10-0833118

Accordingly, it is an object of the present invention to provide a plasma display panel capable of uniformly supplying an RF (Radio Frequency) power source to a gas distribution plate, preventing central deflection of a gas distribution plate, And to provide a chemical vapor deposition apparatus for a display.

According to an aspect of the present invention, there is provided a plasma display comprising: a gas distribution plate disposed in a chamber in which a deposition process for a glass substrate for a flat panel display proceeds, in which a plurality of through holes are formed to provide a deposition material on a surface of the glass substrate; A backing plate having a buffer space formed between the gas distribution plate and the gas distribution plate, the backing plate disposed in parallel with the gas distribution plate in the upper region of the gas distribution plate; And a RF power supply unit connected to the gas distribution plate and serving as a sag prevention RF power supply to the gas distribution plate while preventing sagging of the gas distribution plate, Can be provided.

And the sag prevention RF power supply unit is directly coupled to the gas distribution plate via the backing plate.

The RF power supply unit for preventing sag prevention includes an RF power feeder arranged to pass through a through hole provided in the backing plate and coupled to the gas distribution plate to supply RF power to the gas distribution plate. And a sag prevention module coupled to the RF power feeder and the backing plate to prevent deflection of the gas distribution plate connected to the RF power feeder.

The RF power feeder may include a feeder rod disposed to pass through a through hole provided in the backing plate and transmitting RF power generated from the RF power generating unit to the gas distribution plate. And a coupling portion provided at one side of the feeder rod and coupling the feeder rod and the gas distribution plate.

The coupling portion is formed to be wider than the cross-sectional area of the RF power feeder, and a plurality of communication holes are formed in the coupling portion to communicate with the through holes of the gas distribution plate.

The sag prevention RF power supply unit may further include an insulation module that isolates the RF power feeder and the sag prevention module from the backing plate.

The insulation module may include: an upper insulation member disposed on the sag prevention module to insulate the RF power feeder; And a lower insulating member disposed below the sag prevention module to insulate the RF power feeder, wherein the sag prevention module is an insulator.

The sag prevention module includes: a sag prevention block coupled to the RF power feeder to prevent relative movement of the RF power feeder with respect to the backing plate; And a support block disposed in the depression formed in the backing plate and engaged with the sag prevention block to support the sag prevention block.

The slack preventing block has a donut shape to surround the RF power feeder, a lower end portion is supported on the upper portion of the support block, and a side of the inner wall is key-engaged with the key groove of the RF power feeder. Is formed.

And the key groove and the key connecting portion may have a rectangular or wedge-shaped cross section.

The sag prevention RF power supply unit may further include a sealing module hermetically coupled to one side of the sag prevention module so that the vacuum state of the buffer space and the standby state of the upper part of the backing plate are separated.

The sealing module includes: a sealing member sealingly coupled to the sag prevention module and the RF power feeder, respectively; And a first O-ring sealingly coupled to the sag prevention module and the backing plate, respectively.

The sealing module may further include a second and a third O-ring for sealing a corresponding position to the inner wall and the lower wall of the sealing member.

And the sealing member and the slack prevention block are integrally formed.

The sag prevention RF power supply unit may be arranged radially in a central region of the gas distribution plate.

Embodiments of the present invention provide a structure in which a RF (Radio Frequency) power source is directly supplied to a gas distribution plate and a sagging of a gas distribution plate is prevented to thereby uniformly supply an RF power source to the gas distribution plate by a simple and efficient structure The central deflection phenomenon of the gas distribution plate can be prevented, and the quality of the deposition of the glass substrate can be improved.

FIG. 1 is a schematic structural view of a chemical vapor deposition apparatus for a flat panel display according to a related art, and shows a direction of supplying RF power.
FIG. 2 is a schematic structural view of a chemical vapor deposition apparatus for a flat panel display according to a first embodiment of the present invention, and shows a direction of supplying RF power.
3 is an enlarged view of a portion A in Fig.
4 is a perspective view of an RF power supply unit for preventing sagging in a state in which an insulation module is not included.
5 is an exploded perspective view of an RF power supply unit for preventing sagging.
Fig. 6 is a schematic perspective view showing the RF power supply unit for anti-sag prevention of Fig. 4 radially arranged and coupled to the central region of the gas distribution plate.
7 is a view showing a combined state of the sag prevention block and the feeder rod of the chemical vapor deposition apparatus for a flat display according to the first embodiment of the present invention.
8 is a view showing a combined state of a sag prevention block and a feeder rod of a chemical vapor deposition apparatus for a flat panel display according to a second embodiment of the present invention.
9 is a view showing a combined state of a sealing member and a feeder rod of a chemical vapor deposition apparatus for a flat panel display according to a third embodiment of the present invention.

In order to fully understand the present invention, operational advantages of the present invention, and objects achieved by the practice of the present invention, reference should be made to the accompanying drawings and the accompanying drawings which illustrate preferred embodiments of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Like reference symbols in the drawings denote like elements.

Prior to the description with reference to the drawings, any of a liquid crystal display (LCD), a plasma display panel (PDP), and an organic light emitting diode (OLED) may be used as the flat panel display. However, in the present embodiment, a glass substrate for an LCD (Liquid Crystal Display) will be referred to as a flat display. Hereinafter, for the sake of convenience, the glass substrate for OLED will be simply referred to as a glass substrate (G).

FIG. 2 is a schematic structural view of a chemical vapor deposition apparatus for a flat panel display according to a first embodiment of the present invention, and is a view showing a supply direction of RF power. FIG. 3 is an enlarged view of a portion A in FIG. Fig. 5 is an exploded perspective view of a RF power supply unit for preventing sagging, and Fig. 6 is an exploded perspective view of an RF power supply unit for preventing sagging in a state where the insulation module is removed. Fig. FIG. 7 is a schematic perspective view showing a combined state of the sag prevention block and the feeder rod of the chemical vapor deposition apparatus for a flat panel display according to the first embodiment of the present invention. FIG. Fig.

As shown in these figures, the chemical vapor deposition apparatus 1 for a flat panel display according to the present embodiment includes upper and lower chambers 51, An electrode E which is provided in the upper chamber 51 and emits a deposition material as a predetermined silicon compound ion toward the glass substrate G to be deposited and an electrode E provided in the lower chamber 52, The upper end of the susceptor 60 is coupled to the central region of the susceptor 60 and the lower end of the susceptor 60 is exposed downward through the lower chamber 52 to lift and lower the susceptor 60. [ And a susceptor support unit 62 which is coupled to the column 61 and which supports the susceptor 60 to prevent the susceptor 60 from sagging.

In addition, the chemical vapor deposition apparatus for a flat panel display according to the present embodiment is disposed in a chamber 50 in which a deposition process is performed on a glass substrate G for a flat panel display, A buffer space B is formed between the gas distribution plate 10 and the gas distribution plate 10 in which a plurality of through holes 11 for providing the gas distribution plate 10 are formed and in the upper region of the gas distribution plate 10, A backing plate 20 disposed in parallel with the gas distribution plate 10 and a backing plate 20 connected to the gas distribution plate 10 and connected to the gas distribution plate 10 by RF RF power supply unit 30 for supplying a radio frequency (RF) power.

When the deposition process for the glass substrate G proceeds, the upper and lower chambers 51 and 52 are coupled to each other. That is, the upper chamber 51 is coupled to the upper portion of the lower chamber 52 by a separate crane, so that the upper and lower chambers 51 and 52 form a body to form the chamber 50.

The chamber 50 formed by the mutual coupling of the upper and lower chambers 51 and 52 is formed in the deposition space S so that the deposition space S can be maintained in a vacuum atmosphere when the deposition process is performed in the deposition space S therein. (S) is shielded from the outside.

Referring to the upper chamber 51, an electrode E is provided along the lateral direction inside the upper chamber 51. The electrode E provides the deposition material to the surface of the glass substrate G by interaction with the susceptor 60 which is the lower electrode.

The electrode E includes a gas distribution plate 10 disposed in an upper region of the chamber 50 in which a deposition process is performed on the glass substrate G for a flat display, And a backing plate 20 arranged in parallel with the gas distribution plate 10 in the upper region of the gas distribution plate 10 with the partition plate B interposed therebetween.

The gas distribution plate 10 is disposed in an upper region in the chamber 50 in which the deposition process is performed on the glass substrate G for a flat panel display and includes a plurality of through holes (See Fig. 6). Therefore, when the susceptor 60 rises and is disposed close to the gas distribution plate 10 by about several tens of millimeters (mm) in the deposition process, the deposition material is discharged through the numerous through holes 11, Lt; / RTI >

An insulator 22 is provided between the backing plate 20 and the upper chamber 51 so that the backing plate 20 is in direct contact with the outer wall of the upper chamber 51 and is not energized. The insulator 22 may be made of Teflon or the like. At the periphery of the backing plate 20, a plate supporting portion 21 for supporting the backing plate 20 with respect to the upper chamber 51 is disposed.

Between the gas distribution plate 10 and the backing plate 20, a present holding member 23 is provided. The present retaining member 23 not only prevents the evaporation material in the buffer space B from leaking out but also supports the gas distribution plate 10 which is a heavy weight of about 400 kg or more on the backing plate 20 .

An upper plate 24 is provided at the upper end of the upper chamber 51. A gas supply unit 70 for supplying a process gas, a reactive gas, a cleaning gas, or other gas into the deposition space S is provided at an upper portion of the upper plate 24.

An RF power generator part 40 is installed around the gas supply part 70. The RF power source generating unit 40 is electrically connected to the gas distribution plate 20 of the electrode E by the slack prevention RF power supply unit 30.

The lower chamber 52 is a portion where the deposition process for the glass substrate G proceeds. So that the deposition space S is substantially formed in the lower chamber 52. [

On the outer wall of the lower chamber 52, there is formed a substrate entry / exit section 53 which is a passage through which the glass substrate G enters and exits the deposition space S by a predetermined work robot. Such a substrate inserting portion 53 can be selectively opened and closed by a gate valve 54 coupled to its periphery.

A gas diffusion plate (not shown) for diffusing the gas existing in the deposition space S back to the deposition space S is formed in the bottom surface area of the lower chamber 52, A vacuum pump (not shown) for forming a vacuum atmosphere, and the like.

The susceptor 60 is disposed laterally in the deposition space S in the lower chamber 52 to support the glass substrate G to be deposited. The susceptor 60 is usually formed as a structure larger than the area of the glass substrate G to be vapor-deposited.

The upper surface of the susceptor 60 is made almost flat so that the glass substrate G can be precisely horizontally loaded. A heater (not shown) is mounted inside the susceptor 60 to heat the susceptor 60 to a predetermined vapor deposition temperature of several hundreds of degrees Celsius. Power to the heater is provided through the interior of the column 61.

The susceptor 60 is provided with a column 61 having an upper end fixed to the center region of the rear surface of the susceptor 60 and a lower end exposed downward through the lower chamber 52 to support the susceptor 60 in an ascending / Are combined.

The susceptor 60 is vertically moved up and down in the deposition space S in the lower chamber 52. That is, when the glass substrate G is loaded, the glass substrate G is disposed on the bottom surface area in the lower chamber 52. When the glass substrate G is loaded and the deposition process is proceeded, As shown in Fig. To this end, the column 61 coupled to the susceptor 60 is connected to an ascending / descending module 63 for ascending and descending the susceptor 60.

On the other hand, as shown in detail in FIG. 1, in the chemical vapor deposition apparatus for a flat panel display according to the related art, RF power is supplied to the central portion of the backing plate 5 by the connection line 9a.

That is, as shown by the arrows, the RF power supplied to the central portion of the backing plate 5 is transmitted to the gas distribution plate 4 through the rim of the backing plate 5, The intensity of the electric field varies from the central portion of the backing plate 5 to the gas distribution plate 4 through the rim portion due to the standing wave effect so that the RF power is distributed over the gas distribution plate 4 from the central portion of the backing plate 5 to the non- Problems arise.

As a result, the plasma density becomes nonuniform from the central portion of the backing plate 5 to the gas distribution plate 4, so that a uniform thin film can not be formed on the glass substrate G. Particularly, There is a problem that the phenomenon that the plasma density becomes uneven when the size of the backing plate 5 is enlarged due to the large surface area is further exacerbated.

In order to solve such a problem, the RF power supply unit 30 for preventing sagging is directly coupled to the gas distribution plate 10, so that RF power is supplied to the gas distribution plate 10, the length of the RF power source is shorter than that of the RF power source indirectly transmitted through the conventional backing plate 20, so that the RF power source is uniformly distributed. Further, the plasma density is uniformly distributed, G) can be uniformly deposited.

The sag prevention RF power supply unit 30 includes an RF power feeder 310, a sag prevention module 330, an insulation module 350 and a sealing module 370.

The sag prevention RF power supply unit 30 is radially disposed in the central region of the gas distribution plate 10 so that the RF power can be uniformly transmitted from the central region of the gas distribution plate 10 to the edge thereof.

In this embodiment, as shown in detail in FIG. 6, four RF power supply units 30 for preventing sag prevention are provided. However, three or five or more RF power supply units 30 may be provided depending on the size of the gas distribution plate 10 .

The RF power feeder 310 is disposed to pass through the through hole 27 provided in the backing plate 20 and is coupled to the gas distribution plate 10 and serves to supply RF power to the gas distribution plate 10.

The RF power feeder 310 is disposed so as to pass through the through hole 27 provided in the backing plate 20 so that the gas distribution plate 10 is disposed at the shortest distance from the RF power generating unit 40 provided on the backing plate 20 It is possible to minimize the transfer distance of the RF power source, thereby uniformly delivering the RF power, and uniformly distributing the plasma density, thereby uniformly depositing the glass substrate.

The feeder rod 311 of the RF power feeder 310 is disposed to pass through the through hole 27 provided in the backing plate 20 to feed the RF power generated by the RF power generator 40 to the gas distribution plate 10 It is a role to deliver.

One end of the feeder rod 311 is coupled to the RF power generating part 40 and the other end of the feeder rod 311 is provided with a coupling part 312 for coupling the feeder rod 311 and the gas distribution plate 10, May be formed to be wider than the cross-sectional area of the RF power feeder 311 so as to provide a coupling position capable of easily engaging with the gas distribution plate 10.

In this case, since the through hole 11 of the gas distribution plate 10 is covered by the coupling portion 312 formed to be wider than the cross-sectional area of the RF power feeder 311, the deposition gas can not be uniformly ejected, A problem may arise in that the deposition quality of the film is uneven.

6, a plurality of communication holes 314 are formed in the coupling portion 312 so as to communicate with the through holes 11 of the gas distribution plate 10, It is possible to solve the problem that the through hole 11 of the gas distribution plate 10 is covered and the quality of the deposition of the glass substrate G can be improved.

Although not shown in detail in the drawing, the engaging portion 312 can be engaged with the gas distribution plate 10 by bolting or the like.

The gap between the upper gas distribution plate 10 and the lower susceptor 60 is important in the case of a chemical vapor deposition apparatus for performing the deposition process of the glass substrate G. However, The gas distribution plate 10 is prevented from being unevenly sagged, particularly at the central region of the gas distribution plate 10, so that the glass substrate 10 supported on the upper surface of the susceptor 60 G) may be deteriorated.

In order to prevent the center sagging phenomenon of the gas distribution plate 10 from occurring, a separate sag prevention device has been provided to solve this problem. However, in this embodiment, the sag prevention RF power supply unit 30 serve to supply RF power to the gas distribution plate 10 and to prevent sagging of the gas distribution plate 10 so as to prevent the center sagging phenomenon of the gas distribution plate 10 without providing a separate device There is an advantage to be able to do.

The sag prevention module 330 of the RF power supply unit 30 for preventing the sag prevention can prevent the center sagging of the gas distribution plate 10. This sag prevention module 330 can be mounted on the RF power source And is connected to the feeder 310 and the backing plate 20 to prevent deflection of the gas distribution plate 10 connected to the RF power feeder 310 and includes a sag prevention block 331 and a support block 332 do.

3 and 7, the support block 332 is disposed in the depression 28 formed in the backing plate 20 and is engaged with the slack prevention block 331 to prevent the slack prevention block 331 And the slack prevention block 331 is coupled to the RF power feeder 310 to prevent the RF power feeder 310 from moving relative to the backing plate 20. [

That is, the sag prevention block 331 is supported by the support block 332 to maintain the distance between the gas distribution plate 10 and the backing plate 20 connected to the RF power feeder 310, Can be prevented.

The support block 332 may be coupled to the backing plate 20 by a plurality of bolts 334 to be secured to a depression 28 formed in the backing plate 20.

The sag prevention block 331 has a donut shape to surround the RF power feeder 310 and a lower end is supported on the upper portion of the support block 332. One side of the inner wall is connected to the key groove And a key coupling part 333 which is key-coupled to the RF power feeder 310 is formed.

As shown in detail in FIG. 7, in the first embodiment, the key groove 313 and the key engaging portion 333 have a rectangular cross section.

The isolation module 350 serves to isolate the RF power feeder 310 and the anti-sag prevention module 330 from the backing plate 20. The isolation module 350 prevents the RF power flowing along the feeder rod 311 of the RF power feeder 310 from flowing to the backing plate 20 or elsewhere, The RF power is uniformly distributed by minimizing the distance of the RF power supply, and the plasma density is evenly distributed. Thus, the glass substrate G can be uniformly deposited do.

The isolation module 350 may include an upper insulating member 351 disposed on top of the sag prevention module 330 to insulate the RF power feeder 310 and a lower insulating member 352 disposed below the sag prevention module 330 And a lower insulating member 352 for insulating the RF power feeder 310. The sag prevention module 330 is an insulator.

The upper insulating member 351 and the lower insulating member 352 are connected to the first to third upper insulating members 351a, 351b and 351c and the first and second lower insulating members 352a and 352b, And the number and the shape of the electrodes can be modified without being limited to the present embodiment.

The sealing module 370 is hermetically coupled to one side of the sag prevention module 330 to separate the vacuum state of the buffer space B from the standby state above the backing plate 20. [

The sealing module 370 includes a sealing member 371 sealingly coupled to the sag prevention module 330 and the RF power feeder 310 and a sealing member 372 sealingly coupled to the sag prevention module 330 and the backing plate 20, And second and third O-rings 373 and 374 which include a first O-ring 372 and seal the corresponding position on the inner wall and the lower wall of the sealing member 370.

The sealing member 371 is manufactured by dividing the sealing member 371 into first and second sealing members 371a and 371b for easy manufacture and assembly and is coupled to the supporting block 332 by a plurality of bolts 375. However, The number and shape are not limited to the present embodiment, but may be varied depending on the number and position of the O-rings.

Unlike the present embodiment, the O-ring may be composed of one or two or four or more members, and various packing members capable of exhibiting not only O-rings but also sealing effects can be used, Silicon, or the like, and various shapes of the o-ring or packing member can be manufactured. It is apparent to those skilled in the art that the scope of the present invention is not limited to this embodiment.

8 is a view showing a combined state of a sag prevention block and a feeder rod of a chemical vapor deposition apparatus for a flat panel display according to a second embodiment of the present invention. The present embodiment is different from the first embodiment in that the key groove 313 'of the feeder rod 311' and the key engaging portion 333 'of the slack prevention block 331' have wedge- .

In the case of the wedge-shaped structure, the gas distribution plate 20 has an advantage in that deflection of the gas distribution plate 10 can be effectively prevented by maintaining firm coupling even if the degree of sagging increases, as the size and weight of the gas distribution plate 20 increases .

9 is a view showing a combined state of a sealing member and a feeder rod of a chemical vapor deposition apparatus for a flat panel display according to a third embodiment of the present invention. The present embodiment is different from the first embodiment in that the slack prevention block 331 is not separately provided and the second sealing member 371b 'is integrally manufactured in a form including the slack prevention block 331, There is a difference in that the member 371b 'directly couples with the feeder rod 311. [

In the case of integrally fabricated in this way, it is advantageous that it is easy to manufacture and assemble.

The operation of the chemical vapor deposition apparatus 1 for a flat panel display having such a configuration will be described below.

The glass substrate G to be deposited, which is transferred by the robot arm (not shown) in a state where the susceptor 60 is lowered to the lower region of the lower chamber 52 by the ascending / descending module 63, (53) and disposed on the upper portion of the susceptor (60).

Thereafter, the inside of the upper and lower chambers 51 and 52 is maintained in a vacuum atmosphere, and the process gas (SiH 4, NH 3, and the like) necessary for deposition is filled.

Next, in order to proceed with the deposition process, when the ascending / descending module 63 is operated to float the susceptor 60, the operation of the ascending and descending module 63 is stopped and the glass substrate is moved to the position directly below the gas distribution plate 10 . At this time, the susceptor 60 is already heated to about 200 to 400 degrees centigrade.

Then, power is directly applied to the gas distribution plate 10 through the anti-sagging RF power supply unit 30. Then, a deposition material, which is a silicon compound ion, is ejected through the gas distribution plate 10 formed with a large number of through holes 11 to reach the glass substrate G, thereby depositing the glass substrate G on the glass substrate G.

In the process of operating as described above, the edge region of the gas distribution plate 10 is supported by the current holding member 23 and the central region of the gas distribution plate 10 is supported by the RF power supply unit 30 The sagging phenomenon of the gas distribution plate 10 due to the thermal expansion during the deposition process can be minimized to more effectively maintain the flatness of the gas distribution plate 10 with respect to the susceptor 60, A vapor deposition film can be formed.

At this time, the RF power supply unit 30 for preventing sagging is advantageously disposed radially in the central region of the gas distribution plate 10, thereby effectively preventing sagging of the central region of the gas distribution plate 10. [

As described above, according to the present embodiment, since the RF power supply unit 30 for preventing sagging is directly coupled to the gas distribution plate to supply RF (Radio Frequency) power and to prevent deflection of the gas distribution plate, The RF power can be uniformly supplied to the gas distribution plate by the efficient structure, and the center sagging phenomenon of the gas distribution plate can be prevented, and the quality of the deposition of the glass substrate can be improved.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Accordingly, such modifications or variations are intended to fall within the scope of the appended claims.

G: glass substrate E: electrode
B: buffer space S: deposition space
10: gas distribution plate 11: through hole
22: susceptor supporting unit 23: ascending / descending module
20: Backing plate 30: RF power supply unit for preventing sagging
40: RF power generator 50: chamber
60: susceptor 70: gas supply part
310: RF power feeder 311: Feeder rod
312: engaging portion 313: key groove
314: communication hole 330: anti-sag module
331: Slack prevention block 332: Support block
333: Key coupling part 350: Insulation module
351: upper insulating member 352: lower insulating member
370: Sealing modules 371a, 371b: First and second sealing members
372: O-ring first 373: O-ring second O-
374: Third O-ring

Claims (15)

A gas diffuser disposed in a chamber in which a deposition process for a glass substrate for a flat display proceeds and in which a plurality of through holes are formed to provide a deposition material to a surface of the glass substrate;
A backing plate having a buffer space formed between the gas distribution plate and the gas distribution plate, the backing plate disposed in parallel with the gas distribution plate in the upper region of the gas distribution plate; And
And an RF power supply unit connected to the gas distribution plate and serving as a sag preventing RF power supply to the gas distribution plate while preventing sagging of the gas distribution plate. The method according to claim 1,
Wherein the sag prevention RF power supply unit is directly coupled to the gas distribution plate via the backing plate. 3. The method of claim 2,
The sag prevention RF power supply unit includes:
An RF power feeder disposed through the through holes provided in the backing plate and coupled to the gas distribution plate to supply RF power to the gas distribution plate; And
And a sag prevention module coupled to the RF power feeder and the backing plate to prevent deflection of the gas distribution plate connected to the RF power feeder. The method of claim 3,
The RF power feeder includes:
A feeder rod arranged to pass through the through holes provided in the backing plate to transmit RF power generated from the RF power generating unit to the gas distribution plate; And
And a coupling portion provided at one side of the feeder rod and coupling the feeder rod and the gas distribution plate. 5. The method of claim 4,
The coupling portion is formed to be wider than the cross-sectional area of the RF power feeder,
And a plurality of communication holes are formed in the coupling portion to communicate with the through holes of the gas distribution plate. The method of claim 3,
The sag prevention RF power supply unit includes:
And an insulation module for insulating the RF power feeder and the sag prevention module from the backing plate. The method according to claim 6,
Wherein the insulation module comprises:
An upper insulating member disposed above the sag prevention module to insulate the RF power feeder; And
And a lower insulating member disposed below the sag prevention module to insulate the RF power feeder,
Wherein the sag prevention module is an insulator. The method of claim 3,
The deflection prevention module includes:
A sag prevention block coupled to the RF power feeder to prevent relative movement of the RF power feeder relative to the backing plate; And
And a support block disposed at a depression formed in the backing plate and engaged with the sag prevention block to support the sag prevention block. 9. The method of claim 8,
The slack prevention block includes:
A donut shape to surround the RF power feeder,
Wherein a lower end portion is supported on the upper portion of the support block, and a side of the inner wall is formed with a key engagement portion that is key-engaged with a key groove of the RF power feeder. 10. The method of claim 9,
Wherein the key groove and the key connecting portion are rectangular or wedge-shaped in cross section. 9. The method of claim 8,
The sag prevention RF power supply unit includes:
And a sealing module sealingly coupled to one side of the sag prevention module so that a vacuum state of the buffer space and an atmospheric state of the upper part of the backing plate are separated. 12. The method of claim 11,
The sealing module includes:
A sealing member hermetically coupled to the sag prevention module and the RF power feeder, respectively; And
And a first O-ring sealingly coupled to the sag prevention module and the backing plate, respectively. 13. The method of claim 12,
The sealing module includes:
And second and third O-rings for sealing the corresponding positions on the inner wall and the lower wall of the sealing member. 13. The method of claim 12,
Wherein the sealing member and the sag prevention block are integrally formed. The method according to claim 1,
The sag prevention RF power supply unit includes:
Wherein the gas distribution plate is radially disposed in a central region of the gas distribution plate.

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