CN100587958C - 具有抑制特性偏移的结构的薄膜晶体管面板及其制造方法 - Google Patents
具有抑制特性偏移的结构的薄膜晶体管面板及其制造方法 Download PDFInfo
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- CN100587958C CN100587958C CN200610171869A CN200610171869A CN100587958C CN 100587958 C CN100587958 C CN 100587958C CN 200610171869 A CN200610171869 A CN 200610171869A CN 200610171869 A CN200610171869 A CN 200610171869A CN 100587958 C CN100587958 C CN 100587958C
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- film
- thin
- electrode
- drain electrode
- film transistor
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- 239000010409 thin film Substances 0.000 title claims abstract description 128
- 238000000034 method Methods 0.000 title claims description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 230000002401 inhibitory effect Effects 0.000 title 1
- 239000010408 film Substances 0.000 claims abstract description 211
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 abstract 3
- 238000000576 coating method Methods 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 239000011521 glass Substances 0.000 description 8
- 238000005755 formation reaction Methods 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 210000002858 crystal cell Anatomy 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- OZUCXGWYZVDFOU-UHFFFAOYSA-N 2-(diethylamino)ethyl 6-hydroxy-4,7-dimethoxy-1-benzofuran-5-carboxylate;hydrochloride Chemical compound [Cl-].CC[NH+](CC)CCOC(=O)C1=C(O)C(OC)=C2OC=CC2=C1OC OZUCXGWYZVDFOU-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005305140A JP5023465B2 (ja) | 2005-10-20 | 2005-10-20 | 薄膜トランジスタパネル |
JP305140/2005 | 2005-10-20 |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008102125665A Division CN101369606B (zh) | 2005-10-20 | 2006-10-20 | 具有抑制特性偏移的结构的薄膜晶体管面板及其制造方法 |
CN200910168653XA Division CN101699624B (zh) | 2005-10-20 | 2006-10-20 | 具有抑制特性偏移的结构的薄膜晶体管面板及其制造方法 |
CN2011100282131A Division CN102163610B (zh) | 2005-10-20 | 2006-10-20 | 具有抑制特性偏移的结构的薄膜晶体管面板及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1971919A CN1971919A (zh) | 2007-05-30 |
CN100587958C true CN100587958C (zh) | 2010-02-03 |
Family
ID=37984531
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200610171869A Active CN100587958C (zh) | 2005-10-20 | 2006-10-20 | 具有抑制特性偏移的结构的薄膜晶体管面板及其制造方法 |
CN200910168653XA Active CN101699624B (zh) | 2005-10-20 | 2006-10-20 | 具有抑制特性偏移的结构的薄膜晶体管面板及其制造方法 |
CN2011100282131A Active CN102163610B (zh) | 2005-10-20 | 2006-10-20 | 具有抑制特性偏移的结构的薄膜晶体管面板及其制造方法 |
CN2008102125665A Active CN101369606B (zh) | 2005-10-20 | 2006-10-20 | 具有抑制特性偏移的结构的薄膜晶体管面板及其制造方法 |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910168653XA Active CN101699624B (zh) | 2005-10-20 | 2006-10-20 | 具有抑制特性偏移的结构的薄膜晶体管面板及其制造方法 |
CN2011100282131A Active CN102163610B (zh) | 2005-10-20 | 2006-10-20 | 具有抑制特性偏移的结构的薄膜晶体管面板及其制造方法 |
CN2008102125665A Active CN101369606B (zh) | 2005-10-20 | 2006-10-20 | 具有抑制特性偏移的结构的薄膜晶体管面板及其制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8089068B2 (zh) |
JP (1) | JP5023465B2 (zh) |
KR (1) | KR100828859B1 (zh) |
CN (4) | CN100587958C (zh) |
HK (1) | HK1105045A1 (zh) |
TW (1) | TWI323945B (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4661913B2 (ja) * | 2008-07-19 | 2011-03-30 | カシオ計算機株式会社 | 液晶表示装置 |
KR101534009B1 (ko) | 2008-10-21 | 2015-07-07 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판과 그 제조 방법 및 박막 트랜지스터 표시판을 갖는 표시 장치 |
KR101772511B1 (ko) * | 2010-06-22 | 2017-08-30 | 엘지디스플레이 주식회사 | 프린지 필드 스위칭 모드 액정표시장치용 어레이 기판 및 이의 제조 방법 |
CN102446913A (zh) * | 2010-09-30 | 2012-05-09 | 北京京东方光电科技有限公司 | 阵列基板及其制造方法和液晶显示器 |
US8921948B2 (en) * | 2011-01-12 | 2014-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20130071962A1 (en) * | 2011-09-20 | 2013-03-21 | Shijian Qin | Method of Manufacturing TFT Array Substrate and TFT Array Substrate |
JP5948814B2 (ja) * | 2011-11-25 | 2016-07-06 | ソニー株式会社 | トランジスタ、表示装置および電子機器 |
KR20140101817A (ko) * | 2011-12-02 | 2014-08-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
CN105742238A (zh) * | 2016-03-02 | 2016-07-06 | 京东方科技集团股份有限公司 | 孔结构和阵列基板及其制作方法、探测装置和显示装置 |
KR101799068B1 (ko) * | 2017-01-12 | 2017-12-12 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조방법 |
US10818856B2 (en) * | 2017-05-18 | 2020-10-27 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method for fabricating thin film transistor, method for fabricating array substrate, and a display apparatus |
CN112242441A (zh) * | 2019-07-16 | 2021-01-19 | 联华电子股份有限公司 | 高电子迁移率晶体管 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3002099B2 (ja) * | 1994-10-13 | 2000-01-24 | 株式会社フロンテック | 薄膜トランジスタおよびそれを用いた液晶表示装置 |
JP3457819B2 (ja) * | 1996-11-28 | 2003-10-20 | カシオ計算機株式会社 | 表示装置 |
JP3873158B2 (ja) * | 1998-06-11 | 2007-01-24 | カシオ計算機株式会社 | 表示パネル及びその製造方法 |
JP3955156B2 (ja) * | 1998-08-31 | 2007-08-08 | エルジー フィリップス エルシーディー カンパニー リミテッド | 電子機器用構成基板と電子機器 |
JP3350486B2 (ja) * | 1999-09-02 | 2002-11-25 | 株式会社東芝 | アクティブマトリクス型液晶表示装置 |
KR100719333B1 (ko) * | 1999-11-25 | 2007-05-17 | 삼성전자주식회사 | 반사-투과형 박막트랜지스터 액정 표시 장치 및 그 제조방법 |
TW490857B (en) | 2001-02-05 | 2002-06-11 | Samsung Electronics Co Ltd | Thin film transistor array substrate for liquid crystal display and method of fabricating same |
CN1154174C (zh) | 2001-05-30 | 2004-06-16 | 友达光电股份有限公司 | 平面显示器制造方法 |
KR100968341B1 (ko) * | 2003-01-13 | 2010-07-08 | 엘지디스플레이 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
KR100935671B1 (ko) | 2003-03-13 | 2010-01-07 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그의 제조 방법 |
JP4170126B2 (ja) * | 2003-03-31 | 2008-10-22 | シャープ株式会社 | 液晶表示装置用基板及び液晶表示装置の製造方法 |
JP4507540B2 (ja) | 2003-09-12 | 2010-07-21 | カシオ計算機株式会社 | 薄膜トランジスタ |
-
2005
- 2005-10-20 JP JP2005305140A patent/JP5023465B2/ja active Active
-
2006
- 2006-10-17 KR KR1020060100599A patent/KR100828859B1/ko active IP Right Grant
- 2006-10-18 US US11/582,886 patent/US8089068B2/en active Active
- 2006-10-19 TW TW095138543A patent/TWI323945B/zh active
- 2006-10-20 CN CN200610171869A patent/CN100587958C/zh active Active
- 2006-10-20 CN CN200910168653XA patent/CN101699624B/zh active Active
- 2006-10-20 CN CN2011100282131A patent/CN102163610B/zh active Active
- 2006-10-20 CN CN2008102125665A patent/CN101369606B/zh active Active
-
2007
- 2007-11-05 HK HK07111977.7A patent/HK1105045A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
HK1105045A1 (en) | 2008-02-01 |
TW200729508A (en) | 2007-08-01 |
TWI323945B (en) | 2010-04-21 |
CN101699624B (zh) | 2011-09-14 |
US20070090422A1 (en) | 2007-04-26 |
CN101369606A (zh) | 2009-02-18 |
CN101699624A (zh) | 2010-04-28 |
KR100828859B1 (ko) | 2008-05-09 |
KR20070043614A (ko) | 2007-04-25 |
JP5023465B2 (ja) | 2012-09-12 |
JP2007115859A (ja) | 2007-05-10 |
CN101369606B (zh) | 2010-11-03 |
CN102163610A (zh) | 2011-08-24 |
US8089068B2 (en) | 2012-01-03 |
CN102163610B (zh) | 2013-01-23 |
CN1971919A (zh) | 2007-05-30 |
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Effective date of registration: 20151020 Address after: Tokyo, Japan, Japan Patentee after: Ortus Technology Co., Ltd. Address before: Tokyo, Japan, Japan Patentee before: CASIO Computer Co., Ltd. |