HK1105045A1 - Thin-film transistor panel having structure that suppresses characteristic shifts and method for manufacturing the same - Google Patents
Thin-film transistor panel having structure that suppresses characteristic shifts and method for manufacturing the sameInfo
- Publication number
- HK1105045A1 HK1105045A1 HK07111977.7A HK07111977A HK1105045A1 HK 1105045 A1 HK1105045 A1 HK 1105045A1 HK 07111977 A HK07111977 A HK 07111977A HK 1105045 A1 HK1105045 A1 HK 1105045A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- thin
- manufacturing
- film transistor
- same
- transistor panel
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005305140A JP5023465B2 (ja) | 2005-10-20 | 2005-10-20 | 薄膜トランジスタパネル |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HK1105045A1 true HK1105045A1 (en) | 2008-02-01 |
Family
ID=37984531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HK07111977.7A HK1105045A1 (en) | 2005-10-20 | 2007-11-05 | Thin-film transistor panel having structure that suppresses characteristic shifts and method for manufacturing the same |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8089068B2 (xx) |
| JP (1) | JP5023465B2 (xx) |
| KR (1) | KR100828859B1 (xx) |
| CN (4) | CN100587958C (xx) |
| HK (1) | HK1105045A1 (xx) |
| TW (1) | TWI323945B (xx) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4661913B2 (ja) * | 2008-07-19 | 2011-03-30 | カシオ計算機株式会社 | 液晶表示装置 |
| KR101534009B1 (ko) * | 2008-10-21 | 2015-07-07 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판과 그 제조 방법 및 박막 트랜지스터 표시판을 갖는 표시 장치 |
| KR101772511B1 (ko) | 2010-06-22 | 2017-08-30 | 엘지디스플레이 주식회사 | 프린지 필드 스위칭 모드 액정표시장치용 어레이 기판 및 이의 제조 방법 |
| CN102446913A (zh) * | 2010-09-30 | 2012-05-09 | 北京京东方光电科技有限公司 | 阵列基板及其制造方法和液晶显示器 |
| US8921948B2 (en) * | 2011-01-12 | 2014-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US20130071962A1 (en) * | 2011-09-20 | 2013-03-21 | Shijian Qin | Method of Manufacturing TFT Array Substrate and TFT Array Substrate |
| JP5948814B2 (ja) * | 2011-11-25 | 2016-07-06 | ソニー株式会社 | トランジスタ、表示装置および電子機器 |
| WO2013080900A1 (en) * | 2011-12-02 | 2013-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN105742238A (zh) * | 2016-03-02 | 2016-07-06 | 京东方科技集团股份有限公司 | 孔结构和阵列基板及其制作方法、探测装置和显示装置 |
| KR101799068B1 (ko) * | 2017-01-12 | 2017-12-12 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조방법 |
| US10818856B2 (en) * | 2017-05-18 | 2020-10-27 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method for fabricating thin film transistor, method for fabricating array substrate, and a display apparatus |
| CN112242441A (zh) * | 2019-07-16 | 2021-01-19 | 联华电子股份有限公司 | 高电子迁移率晶体管 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3002099B2 (ja) * | 1994-10-13 | 2000-01-24 | 株式会社フロンテック | 薄膜トランジスタおよびそれを用いた液晶表示装置 |
| JP3457819B2 (ja) * | 1996-11-28 | 2003-10-20 | カシオ計算機株式会社 | 表示装置 |
| JP3873158B2 (ja) * | 1998-06-11 | 2007-01-24 | カシオ計算機株式会社 | 表示パネル及びその製造方法 |
| JP3955156B2 (ja) * | 1998-08-31 | 2007-08-08 | エルジー フィリップス エルシーディー カンパニー リミテッド | 電子機器用構成基板と電子機器 |
| JP3350486B2 (ja) * | 1999-09-02 | 2002-11-25 | 株式会社東芝 | アクティブマトリクス型液晶表示装置 |
| KR100719333B1 (ko) * | 1999-11-25 | 2007-05-17 | 삼성전자주식회사 | 반사-투과형 박막트랜지스터 액정 표시 장치 및 그 제조방법 |
| TW490857B (en) * | 2001-02-05 | 2002-06-11 | Samsung Electronics Co Ltd | Thin film transistor array substrate for liquid crystal display and method of fabricating same |
| CN1154174C (zh) | 2001-05-30 | 2004-06-16 | 友达光电股份有限公司 | 平面显示器制造方法 |
| KR100968341B1 (ko) * | 2003-01-13 | 2010-07-08 | 엘지디스플레이 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
| KR100935671B1 (ko) * | 2003-03-13 | 2010-01-07 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그의 제조 방법 |
| JP4170126B2 (ja) * | 2003-03-31 | 2008-10-22 | シャープ株式会社 | 液晶表示装置用基板及び液晶表示装置の製造方法 |
| JP4507540B2 (ja) | 2003-09-12 | 2010-07-21 | カシオ計算機株式会社 | 薄膜トランジスタ |
-
2005
- 2005-10-20 JP JP2005305140A patent/JP5023465B2/ja active Active
-
2006
- 2006-10-17 KR KR1020060100599A patent/KR100828859B1/ko active IP Right Grant
- 2006-10-18 US US11/582,886 patent/US8089068B2/en active Active
- 2006-10-19 TW TW095138543A patent/TWI323945B/zh active
- 2006-10-20 CN CN200610171869A patent/CN100587958C/zh active Active
- 2006-10-20 CN CN2011100282131A patent/CN102163610B/zh active Active
- 2006-10-20 CN CN200910168653XA patent/CN101699624B/zh active Active
- 2006-10-20 CN CN2008102125665A patent/CN101369606B/zh active Active
-
2007
- 2007-11-05 HK HK07111977.7A patent/HK1105045A1/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN101699624A (zh) | 2010-04-28 |
| KR20070043614A (ko) | 2007-04-25 |
| KR100828859B1 (ko) | 2008-05-09 |
| CN101699624B (zh) | 2011-09-14 |
| CN102163610B (zh) | 2013-01-23 |
| US20070090422A1 (en) | 2007-04-26 |
| TW200729508A (en) | 2007-08-01 |
| CN102163610A (zh) | 2011-08-24 |
| CN101369606A (zh) | 2009-02-18 |
| JP2007115859A (ja) | 2007-05-10 |
| CN100587958C (zh) | 2010-02-03 |
| TWI323945B (en) | 2010-04-21 |
| JP5023465B2 (ja) | 2012-09-12 |
| CN1971919A (zh) | 2007-05-30 |
| US8089068B2 (en) | 2012-01-03 |
| CN101369606B (zh) | 2010-11-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20231024 |