CN100583418C - 粘接剂及电气装置 - Google Patents

粘接剂及电气装置 Download PDF

Info

Publication number
CN100583418C
CN100583418C CN200610163174A CN200610163174A CN100583418C CN 100583418 C CN100583418 C CN 100583418C CN 200610163174 A CN200610163174 A CN 200610163174A CN 200610163174 A CN200610163174 A CN 200610163174A CN 100583418 C CN100583418 C CN 100583418C
Authority
CN
China
Prior art keywords
temperature
bonding agent
curing agent
resinous principle
main
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200610163174A
Other languages
English (en)
Other versions
CN1971888A (zh
Inventor
武市元秀
小西美佐夫
筱崎润二
阿久津恭志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dexerials Corp
Original Assignee
Sony Chemicals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Chemicals Corp filed Critical Sony Chemicals Corp
Publication of CN1971888A publication Critical patent/CN1971888A/zh
Application granted granted Critical
Publication of CN100583418C publication Critical patent/CN100583418C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83856—Pre-cured adhesive, i.e. B-stage adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01045—Rhodium [Rh]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0495—5th Group
    • H01L2924/04953—TaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12556—Organic component
    • Y10T428/12569—Synthetic resin

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Polymers & Plastics (AREA)
  • Manufacturing & Machinery (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)
  • Adhesive Tapes (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

本发明提供可靠性高的半导体晶片连接用树脂。粘接剂(12)包含能聚合的主树脂成分，使主树脂成分自行聚合的主固化剂和对主树脂成分加成聚合反应的副固化剂。在基板(13)上涂敷此粘接剂(12)，贴合半导体晶片(11)，一旦加热的话，对由于主树脂成分自行聚合反应而形成的三维网状结构的主链，副固化剂进行加成聚合反应。由加成聚合反应部分呈胶状结构的第1温度比主链呈胶状结构的第2温度低，所以在第1温度中的弹性模量降低率急剧变大，能够减轻半导体晶片(11)与基板(13)之间的应力。

Description

粘接剂及电气装置
本案系母案(申请号：01142536.9)的分案。
技术领域
本发明是关于粘接剂，特别是关于在基板上连接半导体晶片用的粘接剂。
背景技术
过去，为了在衬底上粘接半导体晶片，一直使用由热固性或热塑性树脂构成的粘接剂。
图4表示用粘接剂112将半导体晶片111附着在衬底113上的状态，半导体晶片111所具有的凸起状端子121被连接在由在基板113上布线图形中的一部分形成的端子122上。在这种状态时，半导体晶片111内的电子元件通过端子121、122与基板113上的布线图形电连接。
但是，由于半导体晶片的线膨涨系数为3ppm/℃的程度，而粘接剂112的线膨涨系数为25-60ppm/℃，比半导体晶片的线膨涨系数大，所以由于线膨涨系数之差，在粘接界面上残留应力。特别地，由于在半导体晶片周围，晶片尺寸越大，残留应力就越大，所以在使热固性粘接剂112固化以后，如果进行温度循环试验和加压蒸煮试验的话，就会发生半导体晶片111剥离的问题。
另外，使用以往技术的粘接剂，由于吸湿条件，连接半导体晶片111以后的可靠性降低显著，因此有必要在附着半导体芯片111以后，在将其通过反射炉，使粘接剂112固化前，预先升温至100℃左右，进行脱水处理。
本发明是为解决上述以往技术中的问题而完成的，其目的在于提供可靠性高的粘接剂。
发明内容
本发明是关于用于连接半导体晶片和基板的粘接剂。该粘接剂包含可聚合的主树脂成分、使前述主树脂成分自行聚合反应的主固化剂、以及对前述主树脂成分加成聚合反应的副固化剂。
本发明是关于如权利要求1所述的粘合剂，其特征在于，在固化后物性方面，随着温度的升高，弹性模量降低，在比30℃高、比150℃低的第1温度，以及在130℃以上、250℃以下的温度范围内，而且在作为比前述第1温度高的第2温度的双方，弹性模量的下降率急剧增加。
本发明是关于前述第1温度和前述第2温度之间的温度差为40℃以上的粘接剂。
本发明是关于前述主树脂成分是环氧树脂的粘接剂。
本发明是关于包含导电性粒子的粘接剂。
本发明是关于包含与前述主树脂成分不同地进行聚合反应的副树脂成分的粘接剂。
本发明是关于预先半固化、成形成片状的粘接剂。
将半导体晶片连接在基板上的粘接剂，有热塑性树脂和热固性树脂。在热固性树脂的情况时，为了防止半导体晶片的剥离，有必要将粘接剂的玻璃转变点置于比使用半导体晶片的温度范围更高的高温侧。
本发明的发明人发现，在热固性树脂的情况时，如果形成三维网状构造的主链是单一的话，因为弹性模量的温度依存性受单一主链支配，且弹性模量单调变化，所以使半导体晶片受到的应力变大。因而，在维持三维网状构造的同时，如果在使用温度范围内，设定粘接剂的弹性模量降低急剧变大的温度的话，就能够减轻应力。
本发明是基于上述见解的发明，本发明是关于用于连接半导体晶片和基板的粘接剂，该粘接剂包含可聚合的主树脂成分、使前述主树脂成分自行聚合反应的主固化剂和对前述主树脂成分加成聚合反应的副固化剂。
在本发明的上述构成当中，由于主固化剂使得主树脂成分自行聚合，形成三维网状结构组织。然后，副固化剂对该网状结构组织加成聚合，结果，出现了弹性模量变化在网状构造部分和因加成聚合而形成的网状构造部分不同的玻璃转变点，所以弹性模量的变化率在第1温度和比第1温度高的第2温度的二个温度下急剧变化。
在第1、第2温度附近以外的温度范围内，弹性模量的变化率大致一定，随着温度的增加，弹性模量降低。
在升温时，随着温度上升，弹性模量降低，一旦达到比第1温度更高的温度，加成聚合部分就变成胶状，弹性模量急剧减少。因而，在第1温度以上的温度，应力的增加就变少。
即使升温至比第1温度更高的高温，如果比第2温度低的话，由于自行聚合所形成的三维网状构造的部分维持玻璃状态，所以不使粘接力降低，半导体晶片不会从基板上剥离。
另外，将本发明粘接剂配置于半导体晶片、基板、前述半导体晶片和基板之间，通过热处理使之固化，就能够构成具有半导体晶片和基板的电气装置。
附图说明
[图1](a)-(c)：是表示本发明粘接剂使用方法的一个例子的图。
[图2](a)-(c)：是表示本发明粘接剂使用方法的另一例子的图。
[图3]是表示温度变化弹性模量、损失弹性模量、损失正切随温度变化的关系图。
[图4]是用以说明过去粘接剂的图。
[符号的说明]
11-半导体晶片
12.15-粘接剂
13-基板
5.6-电装置
P1-第1温度
P2-第2温度
具体实施方式。
首先将可聚合的主树脂成分、能使该主树脂成分自行聚合反应的主固化剂和对主树脂成分进行加成聚合反应的副固化剂配合，制作本发明的粘接剂。此粘接剂呈糊状。
图1(a)中的符号13是表面上配置了铜配线的基板，由该铜配线的一部分形成连接端子22。在此连接端子22上涂敷一定量的粘接剂。图1(b)中的符号12表示被涂敷状态的粘接剂。
图1(c)中的符号11是半导体晶片。在此半导体晶片11的一面形成与内部电路连接的凸起状连接端子21。将半导体芯片11的连接端子21所处位置的那一面压接在粘接剂12上，而且使基板13中的连接端子22与半导体晶片11的连接端子21接触，同时加热，使粘接剂12固化，在使半导体晶片11与基板13的连接端子21、22彼此之间电连接的状态下将半导体晶片11固定在基板13上，得到本发明的电气装置5。
上述粘接剂呈糊状，而本发明粘接剂也包括以显示自己支撑性程度的半固化膜状的粘接剂和添加固态树脂呈薄膜状的粘接剂。
图2(a)的符号15表示本发明中一个例子的膜状粘接剂，如图2(b)所示，首先将此粘接剂15贴合在形成基板13的连接端子22一侧的表面上，然后如图2(c)所示，在粘接剂15的表面上贴合半导体晶片11，使基板13的连接端子22与半导体晶片11中的连接端子21接触。加热处理使粘接剂15固化，就得到本发明的电气装置6。
图3是表示本发明一例的粘接剂相对于温度的弹性模量、弹性模量损失和tanδ的关系的图，此粘接剂各自包含20重量份作为可聚合的主树脂成分环氧树脂(大日本インキ化学工业(株)制造「HP4032D」)、15重量份作为使该主树脂成分自行聚合反应的主固化剂环氧分散咪唑类固化剂(旭化成(株)制造「HX 3941HP」)、5重量份作为与主树脂成分加成聚合反应的副固化剂酚类固化剂(大日本インキ化学工业(株)制造「VH4170」)、10重量份作为不与环氧树脂反应的副树脂成分苯氧基树脂(东都化成(株)制造「YP50」)和45重量份作为填充剂的二氧化硅。
在加热此粘接剂的时候，首先在大约100℃的第1温度P1时，弹性模量的降低率(表示弹性模量随温度变化的曲线的坡度)急剧变大，然后在大约160℃的第2温度P2时，弹性模量的降低率进一步变大。在从室温至第1温度P1期间、在从第1温度P1到第2温度P2之间、在从第2温度P2到200℃之间，弹性模量降低率大致是一定的。
在主树脂成分使用环氧树脂的时候，除咪唑类固化剂以外，可以使用叔胺、路易斯酸类催化剂作为使主树脂成分自行聚合的主固化剂。可以使用具有活性氢的胺类固化剂、酚类固化剂、酰肼类固化剂、巯基类固化剂、双氰胺类固化剂等作为对主树脂成分加成聚合反应的副固化剂。
本发明中的树脂，从生产效率方面考虑希望能够使其在短时间内固化，因此在180℃以上、250℃以下的温度范围内加热5秒以上、20秒钟以下。因而，希望第2温度P2至少在130℃以上。另外，为了在反射炉中使固化后不残留残余应力，在加热中的最高温度下，希望弹性模量在0.5GPa以下。作为目标，希望在250℃下弹性模量在0.5GPa以下且0.1GPa以上。
以下，按下面表1所示的配合制作实施例1至实施例6以及比较例1的粘接剂。
表1使用的树脂和固化剂
 实施例1  实施例2  实施例3  实施例4  实施例5  实施例6  比较例1
  副树脂成分YP50   10   10   10   10   20   10   10
  主树脂成分HP4032D   20   20   20   -   10   20   20
  主树脂成分EP828   -   -   -   20   -   -   -
  填充剂二氧化硅   45   45   45   45   45   50   45
  副固化剂DICY   -   1.5   -   -   -   -   -
  副固化剂VH4170   5   -   5   5   5   5   -
  主固化剂HX3941HP   15   15   15   15   15   15   15
  导电粒子20GNR   21   21   -   21   21   21   21
YP50……苯氧基树脂：东都化成(株)
HP4032D……环氧树脂环氧当量140g/eq
大日本インキ化学工业(株)
EP828……环氧树脂环氧当量190g/eq
油化シエルイポキシ(株)
DICY……双氰胺固化剂活性氢当量21g/eq
日本カ一バイド(株)
VH4170……酚类固化剂活性氢当量118g/eq
HX3941HP……环氧分散咪唑类固化剂环氧当量280g/eq旭化成(株)
20GNR……金属涂层树脂粒子日本化学工业(株)
HP 4032D和EP 828是本发明中的可聚合主树脂成分，HX 3941HP是能使主树脂成分自行聚合反应的主固化剂。另外，DICY和VH4170是与主树脂成分加成聚合反应的副固化剂。YP50是与主树脂成分不同、另外聚合反应的副树脂成分。比较例1不含有副固化剂。
上述实施例1-6和比较例1中的粘接剂呈膜状，如图1(a)～(c)所示，将特别用于连接试验所制作的半导体晶片11置于作为玻璃环氧基板的基板13上，在180℃×20秒条件下连接。此时施加的负荷相当于半导体晶片11的每1个连接端子21为100g。所用半导体晶片11的大小是10mm正方形的硅片。
与上述不同，在200℃温度下加热实施例1-6和比较例1的粘接膜5分钟，使其固化后，切取2mm×5cm、厚50μm大小，制作试验片。用该试验片将半导体晶片11贴合在基板13上，在30℃、RH70％气氛中放置192小时以后，使其通过反射炉，在最高温度240℃下加热，使粘接剂固化。
对试验片测量损失正切(tanδ)与250℃的弹性模量，以及测量在弹性模量的变化率增加方向急剧变化的第1、2温度P1、P2与在该第1、第2温度P1、P2、时的弹性模量。损失正切(tanδ)、损失弹性模量、弹性模量的测定方法按照JIS K7198-1991(现在转成JIS K7244-4：1999)执行。
还有，对于连接半导体晶片11的基板13，施行温度循环试验(TCT)和加压蒸煮试验(PCT)。
测量结果列于表2。
表2测量结果
  实施例1   实施例2   实施例3  实施例4   实施例5  实施例6  比较例1
  低温侧的tanδ峰   111   120   110   107   105   113   160
  高温侧的tanδ峰   181   175   180   165   178   180   无
  250℃弹性率   0.21   0.18   0.23   0.07   0.12   0.25   0.29
  第1温度P<sub>1</sub>   103   105   102   98   96   104   118
  第1温度P<sub>1</sub>时的弹性率E<sub>1</sub>   4.3   3.3   4.1   4.2   4.0   4.5   4.0
  第2温度P<sub>2</sub>   160   153   161   135   157   162   -
  第2温度P<sub>2</sub>时的弹性率E<sub>2</sub>   1.2   1.2   1.1   1.2   1.0   1.4   -
  E<sub>1</sub>/E<sub>2</sub>   3.6   2.8   3.7   3.5   4.0   3.2   -
  TCT周期   1000＜   1000＜   850   762   435   525   15
  PCT300h   Good   Good   Good   Good   Good   Good   NG
试验片……2mm×5cm厚50μm
损失正切测量频率……11Hz
吸湿条件……30℃，RH70％，192时间
反射温度……最大240℃
TCT条件……-55℃/125℃
PCT条件……121℃，2.1atm RH100％
正如从上述表2中所理解的那样，实施例1-6与比较例1相比较，在温度循环试验方面能够得到数十倍的可靠性，而且300小时加压蒸煮试验结果，在比较例1中，半导体晶片11与基板13的连接端子21、22之间的电连接失掉，变得不好，而使用本发明中粘接剂的实施例1-6能够保持电气连接，全部是合格品。
如果试着求出在第1温度P1时的弹性模量E1与在第2温度P2时的弹性模量E2之比E1/E2的话，从表2可以看出，本发明粘接剂的E1/E2值为2.8以上。如果E1/E2值为2.8以上的话，就能预料对温度循环试验(TCT)能够合格。
在上述各实施例当中，金属涂膜树脂粒子用作导电性粒子，但也可以使用金属粒子。另外，如实施例3所示，也可以不含导电性粒子。
更进一步地，在上述实施例当中，二氧化硅用作填料，但也可以使用氧化铝和氧化钛等其他填料。用苯氧基树脂作为与主树脂成分不同地进行聚合反应的副树脂成分，但也可使用聚酯树脂、丙烯酸树脂、聚氨酯树脂等其他种类的树脂。另外，也可以不包含副树脂成分。还可以配合偶联剂等添加剂。
为了将本发明的粘接剂形成到薄膜上，可将本发明的粘接剂涂敷在平板等上，加热并以10％-40％的固化率使之半固化即可。
由于弹性模量的降低率分二阶段变化，所以就能得到施加于半导体晶片的应力小而且可靠性高的电装置。

Claims (5)

1.一种电气装置，其特征是，
所述电气装置包括半导体芯片和基板，所述半导体芯片用粘接剂被粘结到所述基板上；
所述粘接剂包括：
可聚合的环氧树脂的主树脂成分，
使所述主树脂成分自聚合反应的主固化剂，以及
与所述主树脂成分进行附加聚合反应的副固化剂，
所述主固化剂是环氧分散咪唑类固化剂，
所述副固化剂是酚类固化剂。
2.如权利要求1所述的电气装置，其特征是，
所述粘接剂包含不与环氧树脂反应的副树脂成分。
3.如权利要求2所述的电气装置，其特征是，
所述副树脂成分是苯氧基树脂。
4.如权利要求1所述的电气装置，其特征是，
所述粘接剂含有导电性粒子。
5.如权利要求1所述的电气装置，其特征是，
所述粘接剂含有填料。
CN200610163174A 2000-10-06 2001-10-05 粘接剂及电气装置 Expired - Fee Related CN100583418C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000306973A JP2002118144A (ja) 2000-10-06 2000-10-06 接着剤及び電気装置
JP306973/00 2000-10-06

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB011425369A Division CN1296450C (zh) 2000-10-06 2001-10-05 粘接剂及电气装置

Publications (2)

Publication Number Publication Date
CN1971888A CN1971888A (zh) 2007-05-30
CN100583418C true CN100583418C (zh) 2010-01-20

Family

ID=18787554

Family Applications (3)

Application Number Title Priority Date Filing Date
CNA2006101631730A Pending CN1970671A (zh) 2000-10-06 2001-10-05 粘接剂及电气装置
CN200610163174A Expired - Fee Related CN100583418C (zh) 2000-10-06 2001-10-05 粘接剂及电气装置
CNB011425369A Expired - Fee Related CN1296450C (zh) 2000-10-06 2001-10-05 粘接剂及电气装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CNA2006101631730A Pending CN1970671A (zh) 2000-10-06 2001-10-05 粘接剂及电气装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB011425369A Expired - Fee Related CN1296450C (zh) 2000-10-06 2001-10-05 粘接剂及电气装置

Country Status (6)

Country Link
US (1) US6641928B2 (zh)
JP (1) JP2002118144A (zh)
KR (1) KR100620937B1 (zh)
CN (3) CN1970671A (zh)
HK (2) HK1044166B (zh)
TW (1) TWI229695B (zh)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002121526A (ja) * 2000-10-17 2002-04-26 Shin Etsu Polymer Co Ltd 絶縁性接着剤、異方導電接着剤、及びヒートシールコネクタ
KR101039978B1 (ko) 2004-06-09 2011-06-13 히다치 가세고교 가부시끼가이샤 접착제 조성물, 회로접속재료, 회로부재의 접속구조 및 반도체 장치
JP2005020018A (ja) * 2004-07-30 2005-01-20 Sony Chem Corp 接着剤及び電気装置
TWI362708B (en) 2005-02-21 2012-04-21 Nitto Denko Corp A manufacturing method of semiconductor device
JP4976719B2 (ja) * 2006-03-28 2012-07-18 住友ベークライト株式会社 絶縁シート、金属箔付き絶縁シートおよび多層プリント配線板
US7772040B2 (en) 2006-09-12 2010-08-10 Nitto Denko Corporation Manufacturing method of semiconductor device, adhesive sheet used therein, and semiconductor device obtained thereby
JP4523611B2 (ja) * 2007-02-20 2010-08-11 日東電工株式会社 半導体装置の製造方法
CN101939396B (zh) * 2007-09-19 2012-11-21 东丽株式会社 电子部件用粘合剂组合物及使用其的电子部件用粘合剂片材
US8563362B2 (en) 2009-03-10 2013-10-22 Sekisui Chemical Co., Ltd. Method of producing semiconductor chip laminate comprising an adhesive that comprises a curing compound, curing agent and spacer particles
US8592260B2 (en) 2009-06-26 2013-11-26 Nitto Denko Corporation Process for producing a semiconductor device
US20130267136A1 (en) * 2010-12-29 2013-10-10 3M Innovative Properties Company Structural hybrid adhesives
JP5883679B2 (ja) * 2011-02-25 2016-03-15 積水化学工業株式会社 接続構造体の製造方法、異方性導電材料及び接続構造体
CN104619742B (zh) 2012-07-03 2016-08-17 3M创新有限公司 制备结构化的复合粘合剂制品的方法
US11637365B2 (en) 2019-08-21 2023-04-25 Ticona Llc Polymer composition for use in an antenna system
US11258184B2 (en) 2019-08-21 2022-02-22 Ticona Llc Antenna system including a polymer composition having a low dissipation factor
US11912817B2 (en) 2019-09-10 2024-02-27 Ticona Llc Polymer composition for laser direct structuring
US11555113B2 (en) 2019-09-10 2023-01-17 Ticona Llc Liquid crystalline polymer composition
US11646760B2 (en) 2019-09-23 2023-05-09 Ticona Llc RF filter for use at 5G frequencies
US11917753B2 (en) 2019-09-23 2024-02-27 Ticona Llc Circuit board for use at 5G frequencies
US11721888B2 (en) 2019-11-11 2023-08-08 Ticona Llc Antenna cover including a polymer composition having a low dielectric constant and dissipation factor
JP2023514988A (ja) 2020-02-26 2023-04-12 ティコナ・エルエルシー 電子デバイス用ポリマー組成物
WO2021173408A1 (en) 2020-02-26 2021-09-02 Ticona Llc Electronic device
JP2023515976A (ja) 2020-02-26 2023-04-17 ティコナ・エルエルシー 回路構造体
CN111477621B (zh) * 2020-06-28 2020-09-15 甬矽电子(宁波)股份有限公司 芯片封装结构、其制作方法和电子设备
US11728065B2 (en) 2020-07-28 2023-08-15 Ticona Llc Molded interconnect device
US11728559B2 (en) 2021-02-18 2023-08-15 Ticona Llc Polymer composition for use in an antenna system

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0759693B2 (ja) * 1987-11-19 1995-06-28 日立化成工業株式会社 銅張積層板用銅箔接着剤
JPH01275622A (ja) * 1988-04-28 1989-11-06 Mitsubishi Cable Ind Ltd エポキシ樹脂組成物
JPH0692572B2 (ja) * 1988-11-28 1994-11-16 日立化成工業株式会社 銅張積層板用銅箔接着剤
JPH0819213B2 (ja) * 1990-07-09 1996-02-28 三菱電機株式会社 エポキシ樹脂組成物および銅張積層板
JP3010534B2 (ja) * 1990-12-26 2000-02-21 東都化成株式会社 エポキシ樹脂組成物
JP3018685B2 (ja) * 1991-12-09 2000-03-13 日立化成工業株式会社 半導体素子用接着剤および半導体装置
JP2842051B2 (ja) * 1992-06-11 1998-12-24 日立化成工業株式会社 接着剤組成物
JPH0669257A (ja) * 1992-08-21 1994-03-11 Hitachi Chem Co Ltd 半導体素子用接着剤および半導体装置
JPH06151479A (ja) * 1992-11-12 1994-05-31 Hitachi Chem Co Ltd 導電性樹脂ペーストおよび半導体装置
US5965269A (en) * 1995-04-04 1999-10-12 Hitachi Chemical Company, Ltd. Adhesive, adhesive film and adhesive-backed metal foil
JP3787889B2 (ja) * 1996-05-09 2006-06-21 日立化成工業株式会社 多層配線板及びその製造方法
JP2000080341A (ja) * 1998-06-22 2000-03-21 Toshiba Chem Corp 異方性導電接着剤および基板搭載デバイス
JP3711842B2 (ja) * 2000-06-01 2005-11-02 ソニーケミカル株式会社 異方性導電接続材料及び接続構造体

Also Published As

Publication number Publication date
HK1102341A1 (en) 2007-11-16
CN1296450C (zh) 2007-01-24
US6641928B2 (en) 2003-11-04
CN1970671A (zh) 2007-05-30
KR20020034863A (ko) 2002-05-09
HK1044166B (zh) 2007-09-21
JP2002118144A (ja) 2002-04-19
KR100620937B1 (ko) 2006-09-13
US20020062918A1 (en) 2002-05-30
HK1044166A1 (en) 2002-10-11
CN1350045A (zh) 2002-05-22
TWI229695B (en) 2005-03-21
CN1971888A (zh) 2007-05-30

Similar Documents

Publication Publication Date Title
CN100583418C (zh) 粘接剂及电气装置
CN110023444B (zh) 膜状粘接剂、使用了膜状粘接剂的半导体封装体的制造方法
US8115322B2 (en) Adhesive, method of connecting wiring terminals and wiring structure
JP4541599B2 (ja) アリル基またはビニル基を有するエポキシ樹脂を含有するダイ結合性接着剤
WO1998015975A1 (fr) Dispositif semi-conducteur, substrat de montage d&#39;une puce de semi-conducteur, leurs procedes de fabrication, adhesif, et film a double couche d&#39;adhesif
KR101856914B1 (ko) 필름상 접착제, 필름상 접착제를 사용한 반도체 패키지 및 그 제조 방법
JP4258984B2 (ja) 半導体装置の製造方法
KR20010030335A (ko) 접속재료
JP3301075B2 (ja) 半導体装置の製造方法
KR102532359B1 (ko) 실장 구조체의 제조 방법 및 이것에 이용되는 시트
JP2003049145A (ja) 半導体装置用接着剤組成物およびそれを用いた半導体装置用接着シート
JP2003129017A (ja) 導電性接着フィルム及びこれを用いた半導体装置
JP4207838B2 (ja) 接続材料
JP4702566B2 (ja) 接続材料
CN108350341B (zh) 粘接剂组合物和结构体
JP5349538B2 (ja) 電気装置
JP2010118613A (ja) 端子間の接続方法
JP4415905B2 (ja) 接着剤、配線端子の接続方法及び配線構造体
JP2005020018A (ja) 接着剤及び電気装置
KR20240022466A (ko) 접착제용 조성물 및 필름형 접착제, 그리고 필름형 접착제를 사용한 반도체 패키지 및 그 제조 방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1102341

Country of ref document: HK

C14 Grant of patent or utility model
GR01 Patent grant
REG Reference to a national code

Ref country code: HK

Ref legal event code: GR

Ref document number: 1102341

Country of ref document: HK

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100120

Termination date: 20171005

CF01 Termination of patent right due to non-payment of annual fee