CN100546030C - 阵列基板与包含阵列基板的显示设备 - Google Patents
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- 239000000758 substrate Substances 0.000 claims abstract description 70
- 238000009413 insulation Methods 0.000 claims abstract description 42
- 239000003990 capacitor Substances 0.000 claims abstract description 30
- 230000002093 peripheral effect Effects 0.000 claims abstract description 24
- 239000011159 matrix material Substances 0.000 claims description 9
- 239000004973 liquid crystal related substance Substances 0.000 claims description 8
- 239000000565 sealant Substances 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 8
- 101000912503 Homo sapiens Tyrosine-protein kinase Fgr Proteins 0.000 description 6
- 102100026150 Tyrosine-protein kinase Fgr Human genes 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 3
- 210000001747 pupil Anatomy 0.000 description 3
- 101150064138 MAP1 gene Proteins 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- G02F1/1362—Active matrix addressed cells
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Abstract
本发明公开了一种阵列基板和包含所述阵列基板的显示设备。所述阵列基板包含基板,所述基板被分成显示区域和邻近所述显示区域的外围区域。像素阵列在与显示区域相对应的基板上形成,并接收驱动信号。驱动电路包含多级,并在与与外围区域相对应的基板上形成。所述每一级包含第一晶体管。所述第一晶体管包含:连接到输出端来输出驱动信号的源极;在栅绝缘层与源极之间形成的沟道层,所述沟道层具有开口以便于一部分栅绝缘层与源极接触;由第一晶体管的栅极规定的电容器;源极;以及与源极接触的栅绝缘层。
Description
技术领域
本发明涉及一种阵列基板,更具体地涉及一种包含了具有改良输出特性的栅驱动电路的阵列基板,以及包含阵列基板的显示设备。
背景技术
液晶显示器是最广泛使用的平板显示器之一。例如,通常可以在多种电子装置中发现液晶显示器,例如,纯平电视、膝上型计算机、蜂窝电话和数字式照相机。
一般而言,液晶显示器包含响应栅信号和数据信号显示图像的显示板、输出栅信号的栅驱动电路和输出数据信号的数据驱动电路。
显示板包含:阵列基板,其上形成多个接收栅信号的栅线和多个接收数据信号的数据线,面对阵列基板的彩色滤光片基板和布置在阵列基板和彩色滤光片基板之间的液晶层。
典型地,栅驱动电路和数据驱动电路被装配在液晶显示板上。然而,最近栅驱动电路已经被形成在阵列基板上来缩小液晶显示器的大小并提高它的生产率。
当栅驱动电路被形成在阵列基板上时,栅驱动电路包含级联连接的移位寄存器。其每一级都包含多个晶体管和多个电容器。
电容器被连接到移位寄存器的输出端来确保从移位寄存器输出的栅信号具有足够的建立时间。因而,当电容器的充电容量不足时,建立时间被缩短,从而恶化栅驱动电路的输出特定。
在一种增强电容器充电容量的技术中,增加了电容器的电极面积。然而,这导致了存在于电容器电极和彩色滤光片基板的公共电极之间的寄生电容的增加。
因而,存在着对一种阵列基板的需求,这种基板包含具有增强充电容量、用于减少栅驱动电路输出特性恶化的电容器。
发明内容
公开了一种包含具有改良输出特性的栅驱动电路的阵列基板,以及具有相同阵列基板的显示设备。
在本发明的一个方面,阵列基板包含基板、像素阵列和驱动电路。基板被分成显示区域和邻近所述显示区域的外围区域。像素阵列接收驱动信号,并且在与显示区域相对应的基板上形成。驱动电路包含多级,并且在与外围区域相对应的基板上形成。每一级包含第一晶体管,此第一晶体管含有:连接到输出端来输出驱动信号的源极;在栅绝缘层与源极之间形成的沟道层,所述沟道层具有开口以便于一部分栅绝缘层与源极接触;由第一晶体管的栅极规定的电容器;源极;以及与源极接触的那部分栅绝缘层。
在本发明的另一个方面,显示设备包含阵列基板和面对阵列基板的相对基板。阵列基板包含基板、像素阵列和驱动电路。基板被分成显示区域和邻近所述显示区域的外围区域。像素阵列接收驱动信号,且在与显示区域相对应的基板上形成。驱动电路包含多级,并且在与外围区域相对应的基板上形成。每一级包含晶体管,此晶体管含有:连接到输出端来输出驱动信号的源极;在栅绝缘层与源极之间形成的沟道层,所述沟道层具有开口以便于一部分栅绝缘层与源极接触;由晶体管的栅极规定的电容器;源极;以及与源极接触的那部分栅绝缘层。
仍是在本发明的另一个方面,显示设备包含:阵列基板;面对阵列基板的相对基板;布置在阵列基板与相对基板之间的液晶层;以及装配在阵列基板上来输出数据信号的驱动芯片。阵列基板包含基板、像素阵列和驱动电路。基板被分成显示区域和邻近所述显示区域的外围区域。像素阵列接收来自驱动芯片的栅信号和数据信号,且在与显示区域相对应的基板上形成。栅驱动电路包含多级。栅驱动电路在与外围区域相对应的基板上形成,并将栅信号施加到像素阵列。每一级包含晶体管,此晶体管包含:连接到输出端来输出驱动信号的源极;在栅绝缘层与源极之间形成的沟道层,所述沟道层具有开口以便于一部分栅绝缘层与源极接触;由晶体管的栅极规定的电容器;源极;以及与源极接触的那部分栅绝缘层。
附图说明
通过结合附图对本发明实例性实施例进行详细描述,本发明的上述和其他方面将变得更加明白,附图中:
图1为显示根据本发明的示例性实施例的阵列基板的平面图;
图2为显示图1中栅驱动电路的方框图;
图3为图2中一级的电路图;
图4为图3中第一节点电势和输出信号的波形图;
图5为图3中第一TFT和电容器布线图的平面图;
图6为顺着图5中线I-I’截取的显示阵列基板的截面图;
图7为显示根据本发明的另一示例性实施例的第一TFT和电容器布线图的平面图;
图8为顺着图7中线II-II’截取的截面图;
图9为显示根据本发明的另一示例性实施例的显示设备的平面图;并且
图10为顺着图9中线III-III’截取的显示显示设备的截面图。
具体实施方式
图1为显示根据本发明的示例性实施例的阵列基板100的平面图。图2为显示图1中栅驱动电路150的方框图。
参考图1,阵列基板100包含基板110,像素阵列120和栅驱动电路150。
基板110包含显示区域DA和邻近显示区域DA的外围区域PA。像素阵列120在与显示区域DA相对应的基板110上形成,而栅驱动电路150在与外围区域PA相对应的基板110上形成。像素阵列120和栅驱动电路150是在基板110上通过薄膜工艺形成的。
像素阵列120包含多条栅线GL1到GLn、多条数据线DL1到DLm、多个薄膜晶体管(TFT)121和多个像素电极122。栅线GL1到GLn与数据线DL1到DLm相互交叉并绝缘。TFT 121和像素电极122以矩阵结构在基板110上形成。TFT 121电气连接到对应的栅线和对应的数据线上。例如,TFT 121的第一TFT包含:电气连接到第一栅线GL1的栅极,电气连接到第一数据线DL1的源极以及电气连接到像素电极122的第一像素电极的漏极。
栅驱动电路150在外围区域PA上形成,并且邻近栅线GL1到GLn的一端。栅驱动电路150电气连接到栅线GL1到GLn的一端,并顺序地输出栅信号到栅线GL1到GLn。
如图2所示,栅驱动电路150包含移位寄存器。所述移位寄存器包含接连地彼此连接的多级SRC1、SRC2、......、SRCn-1、SRCn,并且所述移位寄存器顺序地输出栅信号。每一级SRC1、SRC2、......、SRCn-1、SRCn包含S-R锁存器和与门。
当移位寄存器工作时,SRC1、SRC2、......、SRCn-1、SRCn其中一级的S-R锁存器响应来自前一级的前一栅信号而激活,并响应来自下一级的下一栅信号而停止。然后,当S-R锁存器被激活并且以高电平施加时钟,与门生成栅信号。
例如,奇数级SRC1到SRCn-1接收第一时钟CKV,而偶数级SRC2到SRCn接收具有与第一时钟CKV不同相位的第二时钟CKVB。在示例性实施例中,第一时钟CKV与第二时钟CKVB彼此相位相反。
这样,当S-R锁存器被激活且以高电平施加第一时钟CKV时,奇数级SRC1到SRCn-1的与门生成栅信号。当S-R锁存器被激活且以高电平施加第二时钟CKVB时,偶数级SRC2到SRCn的与门生成栅信号。
图3为图2中SRC1、SRC2、......、SRCn-1、SRCn其中一级的电路图。图4为图3中第一节点N1电势和从输出端OUT输出的输出信号的波形图
参考图3,所述级包含:电容器C,以及第一、第二、第三和第四TFT NT1、NT2、NT3和NT4。
第一TFT NT1包含:连接到时钟端CK的漏级,通过第一节点N1连接到电容器C的第一电极的栅极,以及连接到电容器C的第二电极和输出端OUT的源极。时钟端CK接收第一时钟CKV或是具有与第一时钟CKV相反相位的第二时钟CKVB。
第二TFT NT2包含:接收第一输入信号IN1的漏级和栅极,以及连接到第三TFT NT3漏级的源极。在示例性实施例中,第一输入信号IN1是扫描启动信号STV或是前一级的前一栅信号。
第三TFT NT3包含:用于接收第二输入信号IN2的栅极,连接到第二TFTNT2源极的漏级,以及用于接收关断电压Voff的源极。在示例性实施例中,第二输入信号IN2是下一级的下一栅信号。
第四TFT NT4包含:连接到第一TFT NT1源极和电容器C第二电极的漏级,用于接收第二输入信号IN2的栅极,以及用于接收关断电压Voff的源极。
如图4所示,当以高电平施加第一输入信号IN1时,第一节点N1具有位于高电平的电势。当电容器C响应第一输入信号IN1而被充电时,第一节点N1的电势自举,从而提高第一节点N1的电势。根据第一节点N1电势的增长,第一TFT NT1导通。然后,将通过图3中的时钟端CK施加的第一时钟CKV或第二时钟CKVB作为栅信号通过第一TFT NT1输出到输出端OUT。
图5为显示图3中第一TFT NT1和电容器C布线图的平面图。图6为顺着图5中线I-I’截取的显示阵列基板的截面图。
参考图5和图6,第一TFT NT1的栅极(举例来说,GE)在基板110上形成。栅极GE具有一般的矩形形状。栅绝缘层131在基板110的上方形成来覆盖栅极GE。
沟道层134在与栅极GE相对应的栅绝缘层131上形成。沟道层134包含活性层132和在活性层132上形成的欧姆接触层133。活性层132包含多晶硅,而欧姆接触层133包含N+-掺杂的多晶硅。
第一TFT NT1的源极(举例来说,SE)和漏级(举例来说,DE)在欧姆接触层133和栅绝缘层131上形成。漏级DE包含主漏极MDE和多个子漏极SDE。主漏极MDE在形成栅极GE的区域外的区域形成。子漏极SDE从主漏极MDE分出支路,并延伸到形成栅极GE的区域,并且子漏极SDE以预定距离相互隔开。
源极SE包含电极体SEa和多个电极凹槽SEb。电极凹槽SEb通常具有U型形状,并接收子漏极SDE。这样,源极SE和子漏极SDE在栅极GE上彼此面对。
如图6所示,在源极SE与栅绝缘层131之间的沟道层134具有开口134a,通过该开口在栅极GE上的栅绝缘层131与源极SE部分地接触。换句话说,开口134a促进在位于栅极GE上的部分栅绝缘层131与源极SE的接触。例如图3所示,电容器C在源极SE和栅极GE之间形成。
一般而言,电容器的充电容量与电容器两极之间的间隙充分地成反比。这样,如图6所示,当部分地除去沟道层134来减少源极SE与栅极GE间的间隙时,电容器C的充电容量可以增强。
因此,从栅驱动电路150输出的栅信号的建立时间可充分地确保。这样,栅驱动电路150可以具有改良的输出特性。
此外,即使不增加源极SE和栅极GE的面积,电容器C的充电容量同样可被增加。这样,在源极SE和栅极GE与形成在相对基板(未显示)上的公共电极(未显示)之间的寄生电容可被避免。这个相对基板可以被认作是公共电极基板或是彩色滤光片基板。
图7为显示根据本发明的另一示例性实施例的第一TFT NT1和电容器C的布线图的平面图。图8为顺着图7中线II-II’截取的截面图。
参考图7和图8,第一TFT NT1的栅极GE在基板110上形成。栅极GE具有一般的矩形形状。栅绝缘层131在基板110的上方形成来覆盖栅极GE。
沟道层134在与栅极GE相对应的栅绝缘层131上形成。沟道层134包含活性层132和在活性层132上形成的欧姆接触层133。
第一TFT NT1的源极SE与漏极DE在欧姆接触层133和栅绝缘层131上形成。漏极DE包含主漏极MDE和多个子漏极SDE。主漏极MDE在形成栅极GE的区域之外的区域形成。子漏极SDE从主漏极MDE分出支路,并延伸到形成栅极GE的区域,并且子漏极SDE以预定距离相互隔开。
源极SE包含主源极MSE和多个子源极SSE。主源极MSE在与栅极GE相对应的栅绝缘层131上形成,并面对着栅极GE。如图8所示,在子源极SSE与栅绝缘层131之间的沟道层134具有开口134a,通过该开口在栅极GE上的栅绝缘层131与主源极MSE部分地接触。换句话说,开口134a促进在栅极GE上的部分栅绝缘层131与主源极MSE的接触。
如图7和图8所示,当部分地除去沟道层134来减少主源极MSE与栅极GE间的间隙时,电容器C的充电容量增强。这样,栅驱动电路150具有改良的输出特性。
图9为显示根据本发明的另一示例性实施例的显示设备的平面图。图10为顺着图9中线III-III’截取的显示显示设备的截面图。
参考图9和图10,显示设备600包含显示图像的显示板400。显示板400包含:例如图1的阵列基板100,相对基板200,液晶层300以及密封层350。相对基板可以被认作是公共电极基板或是彩色滤光片基板。
相对基板200包含基板210、彩色滤光片层220、第一黑矩阵231、第二黑矩阵232和公共电极240。相对基板200面对着阵列基板100。
彩色滤光片层220包含红、绿、蓝色彩像素R、G和B,并在与显示区域DA相对应的基板210上形成。第一黑矩阵231在两个邻近的色彩像素之间形成,而第二黑矩阵232在与围绕显示区域DA的第一外围区域PA1相对应的区域内形成。第二黑矩阵232防止栅驱动电路150被投射到显示板400的屏幕上。
液晶层300被布置在阵列基板100与相对基板200之间,并在显示区域DA内形成。密封层350被布置在阵列基板100与相对基板200之间,并在第一外围区域PA1内形成。这样,密封层350可密封液晶层300。
密封层350同样在与部分地覆盖栅驱动电路150的相对基板200相对应的区域内被形成。密封层350包含比液晶层300具有更低介电常数的材料。这样,公共电极240与栅驱动电路150之间的寄生电容可减少。从而,显示设备600可防止栅驱动电路150的输入/输出信号的失真,因此防止由此的故障。
如图9所示,显示设备600还可包含装配在阵列基板100上的驱动芯片500。驱动芯片500被形成在,例如,邻近第一外围区域PA1的第二外围区域PA2。驱动芯片500电气连接到形成在阵列基板100上的数据线DL1到DLm,并施加数据信号到数据线DL1到DLm。或者,驱动芯片500可在薄膜上形成。
根据本发明的示例性实施例,处于栅绝缘层与连接到栅驱动电路输出端的晶体管的源极之间的沟道层具有一个开口,通过该开口在栅极上的栅绝缘层与源极部分地接触。
这样,栅极与源极之间的电容器可具有增强的充电容量。从而,栅信号的建立时间可充分地确保,因此防止栅驱动电路的输出特性的恶化。
参考其中的示例性实施例对本发明进行特别显示和描述时,本领域的技术人员应该理解,在不脱离所附权利要求书所定义的本发明的精神和范围的情况下,可以进行形式和细节上的各种修改。
Claims (27)
1.一种阵列基板包含:
具有显示区域和邻近所述显示区域的外围区域的基板;
接收驱动信号的像素阵列,所述像素阵列在与显示区域相对应的基板上形成;以及
具有多级且形成在与外围区域相对应的基板上的驱动电路,其中所述每一级包含:
第一晶体管,包含:栅极、源极、漏极、使栅极与源极和漏极电气绝缘的栅绝缘层以及布置在栅绝缘层上的沟道层,
其中,布置在栅极与源极之间的沟道层的一部分包含使部分栅绝缘层暴露的开口,以使得该栅极上的栅绝缘层通过该开口与该源极部分接触。
2.如权利要求1所述的阵列基板,其中所述第一晶体管包含:
具有主漏极和多个从主漏极分支出去并相互隔开的子漏极的漏极,而源极包含电极体和多个接收子漏极的凹槽。
3.如权利要求2所述的阵列基板,其中所述电极体被栅极叠盖,且沟道层的开口对应着在电极体与栅极之间的被叠盖区域。
4.如权利要求1所述的阵列基板,其中所述源极包含:
主源极和多个从主源极分支出去的子源极,所述第一晶体管包含漏极,此漏极具有主漏极和多个从主漏极分支出去的子漏极,其中将所述子漏极布置在邻近的子源极之间。
5.如权利要求4所述的阵列基板,其中所述子源极与子漏极在栅极上以第一距离相隔开。
6.如权利要求4所述的阵列基板,其中所述主源极被栅极叠盖,且沟道层的开口对应着在主源极与栅极之间的被叠盖的区域。
7.如权利要求1所述的阵列基板,其中所述沟道层包含:
由多晶硅组成的活性层;以及
由N+-参杂掺杂多晶硅组成的欧姆接触层,该欧姆接触层在活性层上形成。
8.如权利要求7所述的阵列基板,其中所述活性层和欧姆接触层在栅极与源极之间形成,且活性层与欧姆接触层中至少有一层被部分地除去。
9.如权利要求1所述的阵列基板,其中所述每一级包含:
响应来自前一级的前一输出信号来工作的第二晶体管;
响应来自下一级的下一输出信号来给电容器放电的第三晶体管;以及
响应下一输出信号来释放当前输出信号的第四晶体管。
10.如权利要求9所述的阵列基板,其中所述第二晶体管包含:
将前一输出信号施加于其上的栅极,将前一输出信号施加于其上的漏极以及电气连接到第一晶体管栅极的源极,所述第三晶体管包含:电气连接到第二晶体管源极的漏极,将下一输出信号施加于其上的栅极以及将关断电压施加于其上的源极,并且所述第四晶体管包含:将下一输出信号施加于其上的栅极,将关断电压施加于其上的源极以及电气连接到第一晶体管源极的漏极。
11.如权利要求9所述的阵列基板,其中所述电容器负荷来自第二晶体管的信号,第一晶体管响应电容器的负载信号将时钟信号输出到输出端作为当前输出信号,并且所述第一晶体管包含:将时钟信号施加于其上的漏极,其中将栅极电气连接到第二晶体管的源极以及将源极连接到输出端。
12.如权利要求1所述的阵列基板,其中所述像素阵列包含:
在基板上以矩阵结构形成的多个像素,其中所述每一个像素包含:
接收栅信号的栅线;
接收数据信号的数据线,该数据线与该栅线交叉并绝缘;
响应栅信号来输出数据信号的像素晶体管,所述像素晶体管电气连接到栅线;以及
接收来自像素晶体管的数据信号的像素电极。
13.如权利要求12所述的阵列基板,其中所述驱动电路是顺序输出栅信号到像素的栅线的栅驱动电路。
14.如权利要求1所述的阵列基板,其中所述多级一个接一个地彼此连接。
15.一种显示设备包含:
阵列基板;以及
面对阵列基板的相对基板,阵列基板包含:
具有显示区域和邻近所述显示区域的外围区域的基板;
接收驱动信号的像素阵列,所述像素阵列在与显示区域相对应的基板上形成;以及
具有多级且形成在与外围区域相对应的基板上的驱动电路,其中所述每一级包含:
晶体管,包含:栅极、源极、漏极、使栅极与源极和漏极电气绝缘的栅绝缘层以及布置在栅绝缘层上的沟道层,
其中,布置在栅极与源极之间的沟道层的一部分包含使部分栅绝缘层暴露的开口,以使得该栅极上的栅绝缘层通过该开口与该源极部分接触。
16.如权利要求15所述的显示设备,其中所述晶体管包含:
具有主漏极和多个从主漏极分支出去并相互隔开的子漏极的漏极,而源极包含电极体和多个接收子漏极的凹槽。
17.如权利要求16所述的显示设备,其中所述电极体被栅极叠盖,且沟道层的开口对应着在电极体与栅极之间的被叠盖区域。
18.如权利要求15所述的显示设备,其中所述源极包含:
主源极和多个从主源极分支出去的子源极,所述晶体管包含漏极,此漏极具有主漏极和多个从主漏极分支出去的子漏极,其中将所述子漏极布置在邻近的子源极之间。
19.如权利要求18所述的显示设备,其中所述主源极被栅极叠盖,且沟道层的开口对应着在主源极与栅极之间的被叠盖的区域。
20.如权利要求15所述的显示设备,更多地包含:
布置在阵列基板与相对基板之间的液晶层;以及
布置在阵列基板与相对基板之间密封液晶层的密封层。
21.如权利要求20所述的显示设备,其中所述密封层被驱动电路叠盖。
22.如权利要求15所述的显示设备,其中所述相对基板包含:
基板;
公共电极;以及
布置在基板与公共电极之间的彩色滤光片层,该彩色滤光片层包含:
在与显示区域相对应的部分基板上形成的色彩像素;
在邻近的色彩像素之间形成的第一黑矩阵;以及
在与外围区域相对应的区域中形成的第二黑矩阵。
23.如权利要求15所述的显示设备,其中所述多级接连地彼此连接。
24.一种显示设备包含:
阵列基板;
面对阵列基板的相对基板;
布置在阵列基板和相对基板之间的液晶层;且
阵列基板包含:
具有显示区域和邻近显示区域的第一外围区域的基板;
接收栅信号和来自数据驱动电路的数据信号的像素阵列,该像素阵列在与显示区域相对应的基板上形成;以及
具有多级且在与第一外围区域相对应的基板上形成以便施加栅信号到像素阵列的驱动电路,其中每一级包含:
晶体管,包含:栅极、源极、漏极、使栅极与源极和漏极电气绝缘的栅绝缘层,以及布置在栅绝缘层上的沟道层;
其中,布置在栅极与源极之间的沟道层的一部分包含使部分栅绝缘层暴露的开口,以使得该栅极上的栅绝缘层通过该开口与该源极部分接触。
25.如权利要求24所述的显示设备,其中所述数据驱动电路在邻近第一外围区域的第二外围区域内形成。
26.如权利要求24所述的显示设备,其中所述多级接连地彼此连接。
27.如权利要求24所述的显示设备,其中所述数据驱动电路在薄膜上形成。
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2005
- 2005-01-06 KR KR1020050001203A patent/KR101246023B1/ko active IP Right Grant
- 2005-12-01 US US11/291,366 patent/US8493524B2/en active Active
- 2005-12-06 TW TW094143025A patent/TWI386707B/zh active
- 2005-12-16 JP JP2005363759A patent/JP5138167B2/ja active Active
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US11094720B2 (en) | 2021-08-17 |
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US20060146218A1 (en) | 2006-07-06 |
US8493524B2 (en) | 2013-07-23 |
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US20130293800A1 (en) | 2013-11-07 |
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