CN100539137C - 用作h-桥电路的功率半导体模块及其制造方法 - Google Patents
用作h-桥电路的功率半导体模块及其制造方法 Download PDFInfo
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Abstract
本发明涉及具有四个功率半导体芯片(N1,N2,P1,P2)和一半导体控制芯片(IC)的作为H桥电路(42)的功率半导体模块(41),及制造该功率半导体模块(41)的方法。半导体芯片(N1,N2,P1,P2,IC)设置在一引线平面(80)的三个互相分离的大面积引线芯片接触区(43到45)上。半导体控制芯片(IC)设置于在中央设置的引线芯片接触区(45)上。作为下侧开关(58,59)的n型沟道功率半导体芯片(N1,N2)以及作为上侧开关(48,49)的P型沟道功率半导体芯片(P1,P2)在任何情况下都被设置在两个侧向设置的引线芯片接触区(43,44)上。n型沟道功率半导体芯片(N1,N2)共同处于地电势(50)且P型沟道功率半导体芯片(P1,P2)电连接到分开的电源电压(VS1,VS2)。
Description
技术领域
本发明涉及一种作为H-桥电路的功率半导体模块,该H-桥电路由两个半桥电路组成。为了这个目的,该功率半导体模块具有四个功率半导体芯片。
背景技术
文件US 5,821,618公开了一种功率半导体模块,该功率半导体模块具有一绝缘外壳,在该外壳中多个金属安装板被排列在一个平面中并且彼此电绝缘。整流器电桥(rectifier bridge)的半导体开关被导电地安装在该金属安装板上。连接引线被电连接到半导体开关,至少一个连接引线被电连接到金属安装板。
所述功率半导体模块具有这些缺点,即多个连接引线作为引线引脚从所述外壳伸出并远离外壳,并且在一端被单独地固定在该外壳中,因此存在这些连接引线在机械负载的情况下从外壳脱落的风险,其危害该桥电路的可靠性。
再者,在US 5,821,618已经公知的该H-桥电路的机械结构需要将各种各样的功率半导体芯片装在一个专门的引线框架上。对于该已知的H-桥电路的机械结构,在这种情况下利用安装在彼此绝缘的引线安装板上的、两个分离的、形式为功率半导体芯片的下侧开关(low-side switches)和一对上侧开关(high-side switches)。为了这目的,该对上侧开关被安装在一中央引线安装板上,而该下侧开关被机械地和电学地固定在相对于该中央引线安装板横向设置的两个引线安装板上。通过功率半导体芯片的栅电极控制该H桥电路,伴随的结果是,为了专门应用,必须使用额外的外部驱动电路,这是不利的。
发明内容
本发明的一个目的是提供H-桥电路的改进的机械结构,其可以成本有效地生产并可以承受更高的机械负荷。而且,本发明用于使该H-桥电路的可靠性和该H-桥电路的可用性得到改进和扩展。
用独立的权利要求的主题的手段实现这目的。在从属权利要求中公开了本发明的有益的改良。
本发明提供一种作为H-桥电路的功率半导体模块,其具有四个功率半导体芯片和一半导体控制芯片。为了这个目的,这些半导体芯片布置在外壳中一引线平面的三个互相分离的大面积引线芯片接触区域上。为了这个目的,该引线平面具有设置在中央的引线芯片接触区,在其上布置该半导体控制芯片,以及相对于其横向布置的两个引线芯片接触区,在任何情况下在这两个芯片接触区上布置作为下侧开关的n型沟道功率半导体芯片和作为上侧开关的P型沟道功率半导体芯片。在这种情况下,所述n型沟道功率半导体芯片共同电连接到地电势,P型沟道功率半导体芯片电连接到分开的电压源。
按照本发明的该功率半导体模块有下列好处,即,与现有技术比较,其结果大大简化,因为包括n型沟道功率半导体芯片和P型沟道功率半导体芯片的半桥设置在各自的横向引线芯片接触区上,并且这两个半桥由中央引线芯片接触区上的中央半导体控制芯片控制,来实现全桥功能。同现有技术比较,这个额外的半导体控制芯片显著地提高了功能性和该功率半导体模块的使用可能性。
由于该五个半导体芯片可以安装在单个引线平面上,制造得以简化,结果是能利用便宜的引线框架。此外,因为提供了以大面积和机械方式固定到外壳上、且可在不需要机械敏感的引线引脚的情况下从外部访问的大面积引线芯片接触,该功率半导体模块的可靠性至少在机械性方面显著地被提高。
在一个该发明的优选方案中,为了在该中央半导体控制芯片和该四个在侧向设置的功率半导体芯片之间的控制信号传输,在半导体芯片的顶部上的接触区通过单独的接合导线电连接。根据本发明,这提高了H-桥电路的可控性,并能使该H桥电路的使用范围变化更大。
除在该功率半导体模块内部的信号传输和向半导体控制芯片外的信号传输以外,还假设在功率半导体芯片的顶侧上的大面积接触区,通过许多并联连接的接合导线连接到所述引线平面上的大面积引线接触区中相应的一个。
该多个接合导线使得可能在多个接合导线连接之间分配大面积接触区的电流负载,以便在功率半导体芯片的顶侧上和所述引线接触区,传导待在所述大面积接触区之间切换的电流,而不会发生热过载。
一种可选的可能性在于,通过接合带将该功率半导体芯片的顶侧上的大面积接触区连接到所述引线平面上相应的大面积引线接触区。这种接合带解决方案优于多个接合导线,结果是制造工艺简单化,尤其是因为接合导线连接的制作是一系列的操作,这一系列操作可以通过接合带组合以形成单个接合步骤。
在产生大面积电连接的另一可能性中,有可能使用导体夹,其通过导电粘合剂导电地连接到功率半导体芯片的顶侧上的大面积接触区和所述引线平面上的大面积接触区。然而,这种解决方案预示着准备好了相应地预先制备的导体夹,随后可以以制造技术的方式使用它们。该功率半导体模块优选具有引线,作为底面上的表面安装外部接触设置在一平面内。
此外,还有可能在该半导体模块的两个彼此相对的边缘侧上提供36个边缘侧接触。与先有技术对比,其中各个引线引脚一端固定在一塑料外壳部件(housing composition)中,以及另一端从该塑料外壳部件伸出,该边缘侧接触解决方案有下列好处,即这些边缘侧接触可以承受高得多的机械负荷,尤其当它们仅仅构成远到所述侧边缘的、该半导体模块的底面上的大面积外部接触的延伸时。于是,它们被相应的大面积外部接触机械地保持住。
相应地,该功率半导体模块的一个优选方案具有36个边缘侧接触,具有侧边接触1到4以及33到36(它们相对地布置)的第一输出端。第二输出端具有侧边接触15到18以及19到22,它们同样地在该半导体模块的边缘区域中刚好彼此相对。第一电源接线端具有边缘侧接触29到32和第二电源接线端具有边缘侧接触11到14,所述电源接线端设置成电学上与输出端绝缘。最后,中央引线端具有接地端,其电连接到边缘侧接触5到8和23到26。仅仅边缘侧接触9、11、27和28形成为信号外部端子,并通过相应接合导线连接电连接到半导体控制芯片。
n型沟道功率半导体芯片和p型沟道功率半导体芯片优选是使用垂直MOS技术的TFT晶体管。具有垂直的漂移路径的这样的TFT晶体管可用于相对高的电源电压,特别在几个千伏特左右。
根据该发明进一步优选的功率半导体模块的构造提供下侧开关,所述下侧开关通过其源极接触和栅极接触粘性且导电地连接到相应引线芯片接触区上的相应输出端子。结果是,设置在相对侧的它们的漏极是可自由达到并且可以通过相应的接合带连接到所提供的中央引线芯片接触区域的地电势,结果是下侧开关通过它们可自由达到的漏极接触经由连接元件并经由中央引线接触区域连接到所述接地端。
具有漏极接触的上侧开关粘性且导电地连接到相应的引线芯片接触区上的相应的输出端。因此,上侧开关的设置在功率半导体芯片的相对侧上的源电极和栅电极可自由达到。当所述栅电极通过接合导线连接方式连接到该中央半导体控制芯片的接触区时,源电极的大面积接触区域经由接合带、粘性地并导电地连接到相应引线外部接触上的相应电源电压端子。
所述半导体控制芯片的多个接触区通过接合导线连接方式电连接到上侧开关的栅极接触和该源极接触,以及连接到下侧开关的漏极接触,由此根据本发明的功率半导体模块的应用可能性得到显著地扩展。
此外,该半导体控制芯片的接触区通过接合导线连接方式一方面电连接到地电势,另一方面电连接到该功率半导体模块的信号外部接触。该功率半导体模块可以通过所述信号外部接触访问。此外,该功率半导体模块的不同的运用是可以利用的。为了这目的,该功率半导体模块的外部接触区域形成引线框架的平面构造的引线板。
优选地,该功率半导体模块具有由塑料外壳部件组成的外壳,所述功率半导体芯片、半导体控制芯片、连接元件和外部接触嵌入其中,而留下在该功率半导体模块的底面和边缘侧上的外部接触区域和边缘接触区域是自由的。
一种用于生产多个作为H-桥电路的功率半导体模块的方法,所述模块具有四个功率半导体芯片和一半导体控制芯片,具有以下方法步骤。
第一步包括生产具有多个功率半导体模块位置的引线框架。在这些功率半导体模块位置提供三个大面积引线芯片接触区、两个用于电源端的引线接触区和四个用于控制信号端的引线接触区。在这种情况下,提供第一大面积引线芯片接触区用于作为下侧开关的n型沟道功率半导体芯片和作为第一半桥的上半桥的上侧开关的p型沟道功率半导体芯片。第二引线芯片接触区为该H-桥电路的第二半桥的功率半导体芯片保留,以及为具有接地端的半导体控制芯片提供第三中央引线接触区。
在制作这样的引线框架之后,该功率半导体芯片和该半导体控制芯片被应用于所提供的引线框架的大面积引线芯片接触区。每种情况下在该五个半导体芯片被固定且定位在该引线框架的功率半导体模块位置之后,在半导体芯片接触区域和引线接触区之间以及在半导体芯片接触区彼此之间应用连接元件。
最后,所述功率半导体芯片、半导体控制芯片、连接元件和引线接触区然后被封装到一塑料外壳部件中,而留下该引线框架的引线端子的外部接触区域是自由的。该引线框架然后能被分成单独的功率半导体模块。
这方法有下列好处,即,多个功率半导体模块可以在使用引线框架和多个引线模块位置的并行方法中同时地生产。这方法此外还有下列好处,即为制作该引线框架仅需一个平面金属板。为了这目的,优选构造由铜或者铜合金组成的金属板。该构造可以通过压印来实现,其具有批量生产的优点,或者经由湿法蚀刻实现,在其过程中,各个引线板区域的边缘拥有便于将引线区域固定在用于功率半导体模块的塑料外壳的底面上的轮廓。构造这种金属板来形成引线框架的另一可能性在于干法刻蚀,其可以用等离子体溅射的手段来进行。用于生产引线框架的替代方法,在于在辅助载体上电沉积该引线框架结构,以及接着从该辅助载体上分离或除去该引线框架,或者分解该辅助载体本身。
为了将该功率半导体芯片和半导体控制芯片应用到所提供的大面积引线芯片接触区,所述半导体芯片可能是焊接或粘性接合在引线芯片接触区上。
为了在半导体控制芯片的接触区域和引线接触区之间、以及在半导体控制芯片接触区和功率半导体芯片接触区之间装配连接元件,可利用各种各样的方法。最便宜的方法之一可能为包括制造接合导线连接的接合。另一方面,有利的是,通过多引线接合或通过装配接合夹或最终通过接合带的接合,在功率半导体芯片接触区和引线接触区之间制造连接元件。
每个所述方法具有它的优点和缺点,接合带装配是其中可以快速连续制造接合带连接的方法,而接合夹装配关系到以下事实,即,这类型的接合夹要为每个功率半导体模块分别制造和分别地适当地安装。
将引线框架分离成单独的功率半导体模块优选通过压印方法实现。然而,也可以用蚀刻法进行分离。
附图说明
现在参照附图更详细地解释本发明。
图1显示根据本发明的H-桥电路的基本电路图;
图2显示作为功率半导体模块的根据图1的H-桥电路的示意性结构。
具体实施方式
图1示出了根据本发明的H-桥电路42的基本电路图,其由两个半桥电路组成,并且通过半导体控制芯片IC连接以形成可控制的H桥电路42。为了这目的,每个半桥电路都具有作为下侧开关58的n型沟道功率半导体芯片N1,所述芯片设置在接地端50和上侧开关48之间,该上侧开关48具有连接到第一电源电压VS1的p型沟道功率半导体芯片P1。第一输出端OUT1在第一下侧开关N1和第一上侧开关P1之间抽出。
在第一半桥的相对侧,第二半桥被设置为包括第二下侧开关59,其形成为第二n型沟道功率半导体芯片N2并且连接在接地端50和第二上侧开关49之间,该上侧开关49具有p型沟道功率半导体芯片P2,其部分连接到第二电压电源VS2。第二输出端OUT2出现在该下侧开关59和该上侧开关49之间。该地电势50也通过线81施加到半导体控制芯片IC。功率半导体芯片N1、N2、P1和P2的栅电极通过信号线82、83、84和85连接到半导体控制芯片IC,并且该半导体控制芯片IC通过信号线86和87连接到电源电压VS1和VS2。
图2示出了根据图1的H-桥电路42作为功率半导体模块41的示意结构。该功率半导体模块41在边缘侧66和68具有36个边缘侧接触1到36,边缘侧接触1到18被设置在边缘侧66上,边缘侧接触19-36被设置在边缘侧68上。这些边缘侧接触的一部分组合以形成大面积引线外部接触71到75,其在该功率半导体模块41内部的引线平面80上形,成用于该H-桥电路的第一半桥的大面积引线芯片接触区43和用于该H-桥电路的第二半桥的引线芯片接触区44。
在每个情形中,下侧开关58和59以及上侧开关48和49分别设置在所述引线芯片接触区43和44上。在这种情况下,下侧开关58和59形成为n型沟道功率半导体芯片N1和N2,并且通过焊接连接或通过粘合连接,通过它们的源极和漏极分别导电地固定到大面积引线芯片接触区43和44上。与此对照,用作上侧开关48和49的p型沟道功率半导体芯片P1和P2,在所有情况下都设置成它们的漏极接触区域在大面积引线芯片接触区43和44上。
该两个大面积引线芯片接触区43和44分别位于右边缘侧65和左边缘侧67的边缘区域中,并且在所有情况下都具有8个边缘侧接触,第一输出OUT1可以在左边缘侧65连接至这些边缘侧接触,以及第二输出OUT2可以在右边缘侧67连接至这些边缘测接触。为此,边缘侧接触1到4以及33到36可用于具有外部接触71的第一输出端OUT1,而边缘侧接触15到18和19到22可用于具有外部接触72的第二输出端OUT2。如已经提及的,功率半导体芯片N1和P1、以及N2和P2分别地设置在相关的大面积引线芯片接触区43和44上,并且通过接合带61到64连接到其它引线接触区45、46和47。
该功率半导体芯片N1、N2、P1和P2的可自由到达(freely accessible)顶侧60具有大面积接触区54到57。在这种情况下,第一功率半导体芯片N1通过在顶部60上的其漏电极D1、经由接合带61连接到该中央引线芯片接触区45,该接触区45的一部分经由外部接触73的边缘侧接触5到8和23到26连接到地电势50。第二半桥的第二下侧开关N2也借助于接合带62、经由中央引线芯片接触区45、通过在顶部60上的其漏电极D2连接到该地电势50。
与此对照,在第一半桥的第一P型沟道功率半导体芯片P1的顶部60上的源电极S3,通过接合带63和外部接触74连接到第一电源电压VS1,而第二P型沟道功率半导体芯片P2通过在其顶部60上的其源电极S4、经由接合带64和外部接触75连接到第二电源电压VS2。图1中示出的连接线81到87,在该功率半导体模块的结构中由接合导线53来实现。另外的接合导线连接53存在于半导体控制芯片IC的顶侧52上的接触区51和信号外部接触面76到79之间。
附图标记表
1-36 功率半导体模块的外部接触
41 功率半导体模块
42 H-桥电路
43 引线芯片接触区(侧向的)
44 引线芯片接触区(侧向的)
45 引线芯片接触区(中央的)
46 引线接触区(VS1)
47 引线接触区(VS2)
48 上侧开关
49 上侧开关
50 地电势或接地端
51 用于信号传输的接触区
52 该半导体控制芯片的顶侧
53 接合导线
54-57 大面积接触区
58 下侧开关
59 下侧开关
60 功率半导体芯片的顶侧
61-64 接合带
65-68 功率半导体芯片的边缘侧
71-75 外部接触
76-79 信号外部接触
80 引线平面
81-87 信号连接线
N1 功率半导体芯片
N2 功率半导体芯片
P1 功率半导体芯片
P2 功率半导体芯片
IC 半导体控制芯片
VS1 电源
VS2 电源
D1 N1的漏极接触
D2 N2的漏极接触
S3 P1的源极接触
S4 P2的源极接触
OUT1 第一输出端
OUT2 第二输出端
Claims (28)
1、一种具有半导体控制芯片和四个功率半导体芯片的、作为H-桥电路的功率半导体模块,所述功率半导体芯片被设置在引线平面的三个互相分离的大面积引线芯片接触区上,所述引线平面具有:在中央设置的引线芯片接触区,在其上设置所述半导体控制芯片;以及两个在侧向设置的引线芯片接触区,在其每个上设置n型沟道功率半导体芯片作为下侧开关和p型沟道功率半导体芯片作为上侧开关,并且所述n型沟道功率半导体芯片共同电连接到地电势,且所述p型沟道功率半导体芯片电连接到分开的供电电压源。
2、根据权利要求1的功率半导体模块,特征在于所述功率半导体芯片和所述半导体控制芯片的顶部上的接触区通过各个接合导线电连接,用于在该中央半导体控制芯片和所述四个在侧向设置的功率半导体芯片之间的控制信号传输。
3、根据权利要求1或权利要求2的功率半导体模块,特征在于:
在所述功率半导体芯片的顶部上的大面积接触区,通过多条平行接合导线连接到所述引线平面上的大面积引线接触区中相应的一个。
4、根据权利要求1或权利要求2的功率半导体模块,特征在于:
在所述功率半导体芯片的顶部上的大面积接触区,通过接合带连接到所述引线平面上的相应的大面积引线接触区。
5、根据权利要求1或权利要求2的功率半导体模块,特征在于:
在所述功率半导体芯片的顶部上的大面积接触区,通过导体夹连接到所述引线平面上的相应的大面积引线接触区。
6、根据权利要求1或2的功率半导体模块,特征在于:
该功率半导体模块具有设置在一平面上的引线作为该功率半导体模块底面上的可表面安装外部接触,其并入边缘侧的边缘侧接触中。
7、根据权利要求1或2的功率半导体模块,特征在于该功率半导体模块包括:36个边缘侧接触;第一输出端,其包括边缘侧接触1到4和33到36;第二输出端,其包括边缘侧接触15到18和19到22;第一电源接线端,其包括边缘侧接触29到32;第二电源接线端,其包括边缘侧接触11到14;以及接地端,其包括边缘侧接触5到8和23到26,而边缘侧接触9、11、27和28是信号外部端子。
8、根据权利要求1或2的功率半导体模块,特征在于该功率半导体模块包括FET晶体管作为功率半导体芯片。
9、根据权利要求1或2的功率半导体模块,特征在于所述下侧开关通过它们的源极接触和栅极接触分别粘性且导电地连接到相应引线芯片接触区上的输出端。
10、根据权利要求1或2的功率半导体模块,特征在于所述下侧开关通过它们的漏极接触、经由连接元件和经由所述中央引线芯片接触区电连接到接地端。
11、根据权利要求1或2的功率半导体模块,特征在于所述上侧开关通过它们的漏极接触分别粘性且导电地连接到相应引线芯片接触区上的输出端。
12、根据权利要求1或2的功率半导体模块,特征在于所述上侧开关通过它们的源极接触、经由连接元件,分别粘性且导电地连接到相应引线外部接触上的电源接线端。
13、根据权利要求1或2的功率半导模块,特征在于该半导体控制芯片的接触区通过接合导线连接到所述上侧开关的栅极接触和源极接触,以及连接到所述下侧开关的漏极接触。
14、根据权利要求1或2的功率半导体模块,特征在于该半导体控制芯片的接触区通过接合导线连接到该功率半导体模块的信号外部接触。
15、根据权利要求1或2的功率半导体模块,特征在于该功率半导体模块的所述外部接触是引线框的平面结构的引线板。
16、根据权利要求1或2的功率半导体模块,特征在于该功率半导体模块包括由塑料外壳部件组成的外壳,所述功率半导体芯片、半导体控制芯片、连接元件和外部接触嵌入其中,而留下该功率半导体模块的底面和边缘侧上的外部接触区域和边缘接触区域是自由的。
17、一种制造多个作为H-桥电路的功率半导体模块的方法,所述功率半导体模块具有半导体控制芯片和四个功率半导体芯片,该方法具有以下方法步骤:
-制作具有多个功率半导体模块位置的引线框架,三个大面积引线芯片接触区和用于电源端的两个引线接触区以及用于控制信号端的四个引线接触区被设置在这些功率半导体模块位置,第一大面积引线芯片接触区提供用于第一半桥的作为下侧开关的n型沟道功率半导体芯片和作为上侧开关的P沟道功率半导体芯片,以及第二引线芯片接触区提供用于该H-桥电路的第二半桥的功率半导体芯片,并且第三引线接触区提供用于具有接地端的半导体控制芯片;
-将所述功率半导体芯片和半导体控制芯片应用于所提供的引线框架的大面积引线接触区;
-在所述功率半导体芯片和半导体控制芯片的接触区和所述引线接触区之间,以及在所述功率半导体芯片和半导体控制芯片彼此之间的接触区之间,装配连接元件;
-将所述功率半导体芯片和所述连接元件,以及所述引线芯片接触区和所述引线接触区封装到塑料外壳部件中,同时使所述引线框架的引线端的外部接触区域保持自由;
-将该引线框架分离成单独的功率半导体模块。
18、根据权利要求17的方法,特征在于结构化金属板,来制造引线框架。
19、根据权利要求18的方法,特征在于所述金属板是平面铜板。
20、根据权利要求18的方法,特征在于该金属板是平面金属板并且被压印来进行结构化。
21、根据权利要求18的方法,特征在于该金属板是平面金属板并且进行湿法或干法蚀刻,以进行结构化。
22、根据权利要求17的方法,特征在于为了制造引线框架,在辅助载体上电沉积该引线框架结构,并且随后将该引线框架结构从该辅助载体分离。
23、根据权利要求17到22之一的方法,特征在于,在将所述功率半导体芯片和半导体控制芯片应用到所提供的大面积引线芯片接触区的过程中,所述芯片被焊接或粘性接合在所述引线接触区上。
24、根据权利要求17到22之一的方法,特征在于,在该半导体控制芯片的接触区和所述引线接触区之间、以及在该半导体控制芯片的接触区和所述功率半导体芯片的接触区之间装配连接元件的过程中,制作接合导线连接。
25、根据权利要求17到22之一的方法,特征在于
在所述功率半导体芯片的接触区和所述引线接触区之间装配连接元件的过程中,采用多个接合导线连接或接合夹。
26、根据权利要求25的方法,特征在于所述接合导线连接或接合夹是接合带。
27、根据权利要求17到22之一的方法,特征在于采用压印方法将该引线框架分离成单独的功率半导体模块。
28、根据权利要求17的方法,特征在于采用蚀刻法将该引线框架分离成单独的功率半导体模块。
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