CN104952860A - 功率半导体组件 - Google Patents

功率半导体组件 Download PDF

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Publication number
CN104952860A
CN104952860A CN201510128787.4A CN201510128787A CN104952860A CN 104952860 A CN104952860 A CN 104952860A CN 201510128787 A CN201510128787 A CN 201510128787A CN 104952860 A CN104952860 A CN 104952860A
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China
Prior art keywords
power semiconductor
chip carrier
carrier part
semiconductor assembly
strap
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CN201510128787.4A
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English (en)
Inventor
R·奥特雷姆巴
F·布鲁齐
李德森
X·施勒格尔
F·施蒂克勒
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Infineon Technologies Austria AG
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Infineon Technologies Austria AG
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Publication of CN104952860A publication Critical patent/CN104952860A/zh
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Abstract

本发明涉及一种功率半导体组件，具有：扁平导体框，所述扁平导体框具有第一芯片载体件(2)以及至少一个第二芯片载体件(3)，它们相互间隔地安装并且分别导电；至少一个第一功率半导体元件(6)，所述第一功率半导体元件安置在所述第一芯片载体件(2)上；至少一个第二功率半导体元件(7)，所述第二功率半导体元件安置在所述第二芯片载体件(3)上；外部扁平导体(5、20、21、22、23、24、34、35、36、37、38)形式的外部触点；以及电容器(8、31)，其中所述电容器(8、31)装配在两个相邻的外部扁平导体上。

Description

功率半导体组件
技术领域
本发明涉及一种功率半导体组件。在此将功率半导体组件理解为一种具有电子构件的装置，如该装置越来越多地得以用于高度集成的电子构件的节省空间和成本的结构。在一个这样的装置中，多个半导体芯片安置在一个壳体中并且不同电子构件连同无源元件设置在一个载体上。电子构件与载体固定连接并且根据设定的应用相互电气连接。
背景技术
对于模拟集成电路并且为了数字集成电路与在电源线上的干扰的解耦而需要具有在nF至10μF的范围中的电容的电容器。这些电容器在已知的多芯片模块方案中作为离散电容器元件设置在载体上。电容器元件在此大多应用在SMD(表面装配装置)结构形式中。该解决方案是成本昂贵并且空间耗费的并且此外部导致电容器不能够任意靠近集成电路地装配。
由文献DE 10 2006 008 632 A1已知一种功率半导体组件，该功率半导体组件具有扁平导体框、至少一个垂直功率半导体元件以及至少另一电子元件特别是电容器，其中电子组件设置在功率半导体元件上。
发明内容
因此存在提供一种功率半导体组件的需求，该功率半导体组件包括电容器并且可节省空间地实现。
该任务通过本发明解决。优选的实施方式给出了进一步的有利改进。
按照本发明的一个实施形式该任务通过一种功率半导体组件解决，该功率半导体组件具有：扁平导体框，所述扁平导体框具有第一芯片载体件以及至少一个第二芯片载体件，它们相互间隔地安装并且分别导电；以及外部扁平导体形式的外部触点；至少一个第一功率半导体元件，所述第一功率半导体元件安置在所述第一芯片载体件上；至少一个第二功率半导体元件，所述第二功率半导体元件安置在所述第二芯片载体件上；以及电容器。所述电容器在此装配在两个相邻的外部扁平导体上。
这样的功率半导体组件具有的优点在于，该功率半导体组件可节省空间地实现，因为电容器相比于常规的功率半导体组件非常靠近集成电路地装配。在此将两个相邻的外部扁平导体理解为两个直接相邻的，也就是说直接连续的外部扁平导体。电容器非常靠近集成电路地装配还具有的优点在于，也能够提高电容器的功效并因此效率。通过电容器和集成电路相互非常靠近地装配，能够将冷却体或散热器在其平面延伸上缩小，该散热器装配在扁平导体框的一侧上并且用于将损耗热量从功率半导体组件导出。由此，功率晶体管主要在壳体中生产，该壳体实现了在冷却体上的装配，因为此外不可能的是，将在一些类型和应用中产生直至几千瓦特的损耗功率。
两个相邻的外部扁平导体在此能够具有用于连接电容器的焊接连接端，电容器因此以SMD结构形式装配。传统元件的连接线通过装配孔引导并且必须在后侧上焊接印刷电路板，而这在SMD结构形式中不适用。由此能够实现印刷电路板的非常紧密的装配并主要是两侧的装配，这特别是在更高频率下积极地影响电路的电气特性并且降低元件的空间要求。这又确保能够实现更小的并同时更加成本有利的模块。
此外，所述功率半导体组件还能够具有接合线，其用于电气连接在所述第一功率半导体元件和第二功率半导体元件的激活的上侧上的接触面与在所述外部扁平导体上的接触面。具有高机械负荷的元件(例如功率半导体元件)一般此外还必须借助于贯穿装配被固定在印刷电路板上，特别是对于纯表面装配的元件在高机械负荷或高电流负载下存在的危险在于，太强地加载或甚至损坏焊接位置或印制导线。
在此焊接连接端能够从接触面移动到外部扁平导体，由此能够进一步简化电容器以及接合线的装配。
所述外部扁平导体在此能够分别具有：一个第一部分，所述接触面设置在所述第一部分上并且所述第一部分位于与所述第一芯片载体件和第二芯片载体件相同的水平面上；信号扁平导体，其平行于所述第一部分定向；以及在所述第一部分与所述信号扁平导体之间的与所述第一部分和所述信号扁平导体垂直设置的角偏转件。由此还能够确保：相比于具有40°角偏转件的常规外部扁平导体，电容器能够显著更靠近集成电路地装配，由此能够在实现功率半导体组件时进一步优化需要的空间要求。
按照一个实施形式，所述功率半导体组件在此还具有由塑料组成的壳体，所述壳体至少包围所述芯片载体件、第一功率半导体元件和第二功率半导体元件以及电容器。塑料在此不仅用于第一和第二功率半导体元件的机械保护，而且也形成在第一和第二芯片载体件之间的间隔中的电气隔离件，所述第一和第二芯片载体件一般位于在供电电压的不同电位上。因为电容器现在同样嵌入到塑料中，所以同样能够机械保护该电容器。
在此所述塑料能够至少嵌入所述第一芯片载体件和第二芯片载体件的上表面并且至少使得所述第一芯片载体件和第二芯片载体件的下表面露出，以使得所述塑料具有下外部表面，所述下外部表面连同所述第一芯片载体件和第二芯片载体件的下表面形成所述功率半导体组件的一个共同的外部表面。第一和第二芯片载体件的下表面因此能够设定功率半导体组件的接地接触面。此外，也能够避免具有全封装的芯片载体的组件壳体的应用，由此降低了功率半导体组件的热导出路径，这将能够减小热阻并因此能够改善功率半导体组件的可靠性。
所述功率半导体组件也能够具有至少一个包括高端开关和低端开关的桥电路，其中所述低端开关集成到所述第一功率半导体元件中，而所述高端开关集成到所述第二功率半导体元件中。如此例如已知的是，以所谓的桥电路控制直流电机，所述桥电路实现了直流电机沿两个旋转方向的运行。高端开关和低端开关在此位于在不同的芯片载体件上并且直接通过位于其下的芯片载体件供以供电电压的电位。
此外，所述功率半导体组件也能够具有级联电路。在半导体高电压开关中已知的是，实施功率半导体元件的级联电路(串联电路)，由此确保期望的抗电强度。
所述功率半导体元件能够是MOSFET或IGBT。一般将功率半导体称为用于开关或控制大电压、电流或功率的晶体管。
优选地，所述功率半导体组件安置在TO壳体中。将TO(Transistor Outline)壳体理解为具有大多两个或三个用于小功率和功率半导体的外部扁平导体形式的外部触点的壳体。可特别成本有利地制造该标准壳体。再者能够将这样的功率半导体组件简单并且没有大的成本地集成到存在的应用中，特别是壳体的尺寸没有不同于常规的功率半导体元件的尺寸。
本发明的另一实施形式也提出一种用于制造功率半导体组件的方法。所述方法在此具有以下步骤：提供第一导电芯片载体件、第二导电芯片载体件以及外部扁平导体形式的外部触点。此外，安置至少一个第一功率半导体元件到所述第一芯片载体件上，并且安置至少一个第二功率半导体元件到所述第二芯片载体件上。随后电气连接在所述第一和第二功率半导体元件的激活上侧上的接触面与在所述外部扁平导体上的接触面。此外，装配电容器到两个相邻的外部扁平导体上。
这样的方法具有的优点在于，该方法能够可节省空间制造功率半导体组件，因为电容器相比于常规的功率半导体组件非常靠近集成电路地装配。在此将两个相邻的外部扁平导体理解为两个直接相邻的也就是说直接连续的外部扁平导体。电容器非常靠近集成电路地装配还具有的优点在于，也能够提高电容器的功效并因此效率。此外，通过电容器和集成电路相互非常靠近地装配，能够将冷却体或散热器在其平面延伸上缩小，该散热器装配在扁平导体框的一侧上并且用于将损耗热量从功率半导体组件导出。由此，功率晶体管主要在壳体中生产，该壳体实现了在冷却体上的装配，因为此外不可能的是，将在一些类型和应用中产生直至几千瓦特的损耗功率导出。
在此所述电容器能够焊接到所述两个相邻的外部扁平导体上并因此以SMD结构形式装配。传统元件的连接线通过装配孔引导并且必须在后侧上焊接印刷电路板，而这在SMD结构形式中不适用。由此能够实现印刷电路板的非常紧密的装配并主要是两侧的装配，这特别是在更高频率下积极地影响电路的电气特性并且降低元件的空间要求。这又确保能够实现更小的并同时更加成本有利的模块。
此外，在所述第一功率半导体元件和第二功率半导体元件的激活的上侧上的接触面还能够分别通过接合线与在所述外部扁平导体上的接触面电气连接。具有高机械负荷的元件(例如功率半导体元件)一般此外还必须借助于贯穿装配被固定在印刷电路板上，特别是对于纯表面装配的元件在高机械负荷或高电流负载下存在的危险在于，太强地加载或甚至损坏焊接位置或印制导线。
按照一个实施形式，其中所述方法还能够具有以下步骤：至少将所述第一芯片载体件、第二芯片载体件、所述第一和第二功率半导体元件以及电容器嵌入到塑料中。引入的塑料在此不仅用于第一和第二功率半导体元件的机械保护，而且也形成在第一和第二芯片载体件之间的间隔中的电气隔离件，所述第一和第二芯片载体件一般位于在供电电压的不同电位上。因为电容器现在同样嵌入到塑料中，所以同样能够机械保护该电容器。
总而言之可确定的是，本发明提出一种功率半导体组件，该功率半导体组件包括电容器并且可节省空间地实现。
因此，功率半导体组件可节省空间地实现，因为电容器相比于常规功率半导体组件非常靠近集成电路地装配，并且此外装配在扁平导体框的一侧上并且用于将损耗热量从功率半导体组件导出的冷却体能够在其平面延伸上缩小。
此外，通过电容器非常靠近集成电路地装配也能够提高电容器的功效并因此效率。
再者这样的功率半导体组件能够安置在成本有利的TO壳体中。
附图说明
现在根据附图进一步阐明本发明。
图1示出了按照本发明的实施形式的功率半导体组件的示意图；
图2示出了按照本发明的实施形式的半导体组件的外部扁平导体的示意图；
图3示出了按照本发明的实施形式的半导体组件的俯视图；
图4示出了按照本发明的实施形式的另一功率半导体组件的一部分的示意图；
图5示出了按照本发明的实施形式的功率半导体组件的俯视图。
具体实施方式
图1示出了按照本发明的实施形式的功率半导体组件1的示意图。
图1在此示出了功率半导体组件1的横截面。在该功率半导体组件1中安装第一芯片载体件2和第二芯片载体件3。芯片载体件2、3是扁平导体框4的部分，扁平导体框附加地还包含外部扁平导体5。在此，在第一芯片载体件2上安置第一功率半导体元件6，而在第二芯片载体件3上安置第二功率半导体元件7。
如图1进一步示出的那样，功率半导体组件1还具有电容器8，其中电容器8装配在两个相邻的外部扁平导体上。
图1因此示出了功率半导体组件1，其包括电容器8并且可节省空间地实现，因为电容器8能够非常靠近集成电路地装配。
按照图1的实施形式，电容器8在此以SMD结构技术安置到两个相邻的外部扁平导体上。图1在此示出了用于焊接亦即用于连接电容器8的焊接连接端9。，
按照图1的实施形式，功率半导体元件6、7在此分别与外部扁平导体5以THT(穿孔技术)结构形式电气连接。图1在此示出了接合线10，经由该接合线在第一和第二功率半导体元件6、7的激活上侧12上的接触面11与在外部扁平导体5上的接触面13连接。
图1中的功率半导体元件6、7在此是IGBT元件14。此外，功率半导体元件也能够是另外的功率半导体元件，例如MOSFET。
在此两个功率半导体元件6、7能够构成为桥电路或级联电路的一部分。
图2示出了按照本发明的实施形式的功率半导体组件1的外部扁平导体5的示意图。具有与图1中相同构造或功能的构件和组件带有相同的附图标记并且不再进一步探讨。
图2在此示出了外部扁平导体5，其具有信号扁平导体15，该信号扁平导体由功率半导体组件1的壳体16特别是TO壳体17突出。
示出的外部扁平导体7在此具有：第一部分18，所述接触面13设置在所述第一部分上并且所述第一部分位于与所述第一芯片载体件2和第二芯片载体件3相同的水平面上；信号扁平导体15，其平行于所述第一部分18定向；以及在所述第一部分18与所述信号扁平导体15之间的与所述第一部分18和所述信号扁平导体15垂直设置的角偏转件19。由此还能够确保：相比于具有40°角偏转件的常规外部扁平导体，电容器能够显著更靠近集成电路地装配，由此能够在实现功率半导体组件时进一步优化需要的空间要求。
图3示出了按照本发明的实施形式的功率半导体组件的俯视图。具有与图1或2中相同构造或功能的构件和组件带有相同的附图标记并且不再进一步探讨。
图3在此示出了五个外部扁平导体20、21、22、23、24。在此五个外部扁平导体20、21、22、23、24的焊接连接端25、26、27、28、29的宽度相比于常规外部扁平导体如此匹配，特别是扩展，以便确保电容器电极的安全和可靠的装配。特别是图3的外部扁平导体20、21、22、23、24在此构成为，确保在五个外部扁平导体20、21、22、23、24的第一外部扁平导体20与第二外部扁平导体21以及第四外部扁平导体23与第五外部扁平导体24之间电容器的安全装配。在此也可能的是，两个相邻的外部扁平导体之一的设计在此镜像相反于两个相邻的外部扁平导体中另一的设计，以便确保电容器的可靠和安全的装配。
图4示出了按照本发明的实施形式的另一功率半导体组件30的一部分的示意图。
图4的功率半导体组件30在此与按照图1至3的实施形式的功率半导体组件1的不同之处在于，特别是通过对电容器31的相应的选择和尺寸确定，该电容器同样嵌入到功率半导体组件30的壳体32中，也就是说连同至少第一和第二芯片载体件以及第一和第二功率半导体元件嵌入到塑料33中。因为电容器31现在同样嵌入到塑料33中，所以该电容器现在正如同功率半导体组件30的其他的构件那样同样被机械保护。
塑料在此还能够如此构成，使得至少第一和第二芯片载体部分的上表面嵌入到塑料中以及使得所述第一芯片载体件和第二芯片载体件的下表面从塑料露出，从而所述塑料具有下外部表面，所述下外部表面连同所述第一芯片载体件和第二芯片载体件的下表面形成所述功率半导体组件的一个共同的外部表面。
图5示出了按照本发明的实施形式的功率半导体组件的俯视图。具有与图1或2中相同构造或功能的构件和组件带有相同的附图标记并且不再进一步探讨。
图5在此又示出了五个外部扁平导体34、35、36、37、38，它们具有用于连接电容器的焊接连接端焊接连接端39、40、41、42、43以及用于连接接合线10的接触面44、45、46，该接合线用于电气连接在第一和第二功率半导体元件6、7的激活上侧12上的接触面11与接触面44、45、46。如可见的那样，接触面44、45、46在此从焊接连接端移动，由此能够大幅简化接合线10以及电容器的装配。
虽然在之前的说明中示出了至少一个示例性的实施形式，但是也能够进行不同的变化和修改。所述实施形式仅仅是例子并且不是设定为以任何方式限制激活范围、可应用性或者设置。而是之前的说明给本领域内技术人员提供了用于实现至少一个示例性实施形式的规划，其中能够做出在示例性的实施形式中所述的元件的功能和设置中的多种变化，而不会脱离所附权利要求及其法律上的等同方案的保护范围。
例如能够考虑的是代替第一和第二芯片载体件以及第一和第二功率半导体元件而设有具有装配在其上的晶体管的唯一的芯片载体件，其中根据上述描述电容器能够装配在源极连接端与漏极连接端之间。
附图标记：
1 功率半导体组件
2 第一芯片载体件
3 第二芯片载体件
4 扁平导体框
5 外部扁平导体
6 第一功率半导体元件
7 第二功率半导体元件
8 电容器
9 焊接连接端
10 接合线
11 接触面
12 激活的上侧
13 接触面
14 IGBT元件
15 信号扁平导体
16 壳体
17 TO壳体
18 第一部分
19 角偏转件
20 第一外部扁平导体
21 第二外部扁平导体
22 第三外部扁平导体
23 第四外部扁平导体
24 第五外部扁平导体
25 焊接连接端
26 焊接连接端
27 焊接连接端
28 焊接连接端
29 焊接连接端
30 功率半导体组件
31 电容器
32 壳体
33 塑料
34 外部扁平导体
35 外部扁平导体
36 外部扁平导体
37 外部扁平导体
38 外部扁平导体
39 焊接连接端
40 焊接连接端
41 焊接连接端
42 焊接连接端
43 焊接连接端
44 接触面
45 接触面
46 接触面

Claims (15)

1.功率半导体组件，具有：扁平导体框(4)，所述扁平导体框具有第一芯片载体件(2)以及至少一个第二芯片载体件(3)，它们相互间隔地安装并且分别导电；以及具有至少一个第一功率半导体元件(6)，所述第一功率半导体元件安置在所述第一芯片载体件(2)上；以及具有至少一个第二功率半导体元件(7)，所述至少一个第二功率半导体元件安置在所述第二芯片载体件(3)上；以及具有外部扁平导体(5、20、21、22、23、24、34、35、36、37、38)形式的外部触点；以及具有电容器(8、31)，其中所述电容器(8、31)装配在两个相邻的外部扁平导体上。
2.根据权利要求1所述的功率半导体组件，其中，所述两个相邻的外部扁平导体具有用于连接所述电容器(8、31)的焊接连接端(9、25、26、27、28、29、39、40、41、42、43)。
3.根据权利要求1或2所述的功率半导体组件，其中，所述功率半导体组件(1)还具有接合线(10)，其用于电气连接在所述第一功率半导体元件(6)和第二功率半导体元件(7)的激活的上侧(12)上的接触面(11)以及在所述外部扁平导体(5、15、35、36、37)上的接触面(13、44、45、46)。
4.根据权利要求3所述的功率半导体组件，其中，所述焊接连接端(39、40、41、42、43)从所述接触面(44、45、46)移动到所述外部扁平导体(34、35、36、37、38)。
5.根据权利要求1至4之一所述的功率半导体组件，其中，所述外部扁平导体(5)分别具有：第一部分(18)，所述接触面(13)设置在所述第一部分上并且所述第一部分位于与所述第一芯片载体件(2)和第二芯片载体件(3)相同的水平面上；还具有信号扁平导体(15)，其平行于所述第一部分(18)定向；以及还具有在所述第一部分(18)与所述信号扁平导体(15)之间的与所述第一部分(18)和所述信号扁平导体(15)垂直设置的角偏转件(19)。
6.根据权利要求1至5之一所述的功率半导体组件，其中，所述功率半导体组件(30)还具有由塑料(33)组成的壳体(32)，所述壳体至少包围所述第一芯片载体件(2)和第二芯片载体件(3)、所述第一功率半导体元件和所述第二功率半导体元件以及所述电容器(31)。
7.根据权利要求6所述的功率半导体组件，其中，所述塑料至少嵌入所述第一芯片载体件(2)和所述第二芯片载体件(3)的上表面并且至少使得所述第一芯片载体件(2)和所述第二芯片载体件(3)的下表面露出，以使得所述塑料具有下外部表面，所述下外部表面连同所述第一芯片载体件(2)和所述第二芯片载体件(3)的下表面形成所述功率半导体组件的一个共同的外部表面。
8.根据权利要求1至7之一所述的功率半导体组件，所述功率半导体组件具有至少一个包括高端开关和低端开关的桥电路，其中在所述第一功率半导体元件中集成所述低端开关，而在所述第二功率半导体元件中集成所述高端开关。
9.根据权利要求1至8之一所述的功率半导体组件，其中，所述功率半导体组件具有级联电路。
10.根据权利要求1至8之一所述的功率半导体组件，其中，所述功率半导体元件(6、7)是MOSFET或IGBT。
11.根据权利要求1至10之一所述的功率半导体组件，其中，所述功率半导体组件(1)包括TO壳体(17)。
12.用于制造功率半导体组件的方法，其中所述方法具有以下步骤：
-提供第一导电芯片载体件、第二导电芯片载体件以及外部扁平导体形式的外部触点；
-安置至少一个第一功率半导体元件到所述第一芯片载体件上，并且安置至少一个第二功率半导体元件到所述第二芯片载体件上；
-将在所述第一半导体元件和所述第二功率半导体元件的激活的上侧上的接触面与在所述外部扁平导体上的接触连接端电气连接；
-装配电容器到两个相邻的外部扁平导体上。
13.根据权利要求12所述的方法，其中，所述电容器焊接到所述两个相邻的外部扁平导体上。
14.根据权利要求12或13所述的方法，其中，在所述第一功率半导体元件和所述第二功率半导体元件的激活的上侧上的接触面经由接合线与在所述外部扁平导体上的接触面电气连接。
15.根据权利要求12至14之一所述的方法，其中，所述方法还具有以下步骤：
-将所述第一芯片载体件和所述第二芯片载体件、所述第一和所述第二功率半导体元件以及所述电容器嵌入到塑料中。
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