CN100504620C - 用于形成双金属镶嵌结构工艺的洗涤液及基板处理方法 - Google Patents
用于形成双金属镶嵌结构工艺的洗涤液及基板处理方法 Download PDFInfo
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- CN100504620C CN100504620C CNB031565794A CN03156579A CN100504620C CN 100504620 C CN100504620 C CN 100504620C CN B031565794 A CNB031565794 A CN B031565794A CN 03156579 A CN03156579 A CN 03156579A CN 100504620 C CN100504620 C CN 100504620C
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- silane
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- cleansing solution
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- BYSYUYRPTYENND-UHFFFAOYSA-N [10-(hydroxymethyl)anthracen-9-yl]methanol Chemical compound C1=CC=C2C(CO)=C(C=CC=C3)C3=C(CO)C2=C1 BYSYUYRPTYENND-UHFFFAOYSA-N 0.000 description 1
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- 230000000996 additive effect Effects 0.000 description 1
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- PMNLUUOXGOOLSP-UHFFFAOYSA-N alpha-mercaptopropionic acid Natural products CC(S)C(O)=O PMNLUUOXGOOLSP-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical group 0.000 description 1
- XCCCHWWMLSAIOH-UHFFFAOYSA-N anthracen-1-ylmethanol Chemical compound C1=CC=C2C=C3C(CO)=CC=CC3=CC2=C1 XCCCHWWMLSAIOH-UHFFFAOYSA-N 0.000 description 1
- JCJNNHDZTLRSGN-UHFFFAOYSA-N anthracen-9-ylmethanol Chemical compound C1=CC=C2C(CO)=C(C=CC=C3)C3=CC2=C1 JCJNNHDZTLRSGN-UHFFFAOYSA-N 0.000 description 1
- BNSKSALWUYKGFH-UHFFFAOYSA-N anthracene-1,2,3,4,5,6-hexol Chemical compound OC1=C(O)C(O)=C(O)C2=CC3=C(O)C(O)=CC=C3C=C21 BNSKSALWUYKGFH-UHFFFAOYSA-N 0.000 description 1
- NMKMOHFZXZFDFP-UHFFFAOYSA-N anthracene-1,2,3,4-tetrol Chemical compound C1=CC=CC2=CC3=C(O)C(O)=C(O)C(O)=C3C=C21 NMKMOHFZXZFDFP-UHFFFAOYSA-N 0.000 description 1
- SLOLMTWBBAFOKJ-UHFFFAOYSA-N anthracene-1,2,3-triol Chemical compound C1=CC=C2C=C(C(O)=C(C(O)=C3)O)C3=CC2=C1 SLOLMTWBBAFOKJ-UHFFFAOYSA-N 0.000 description 1
- AGTBKJDELLDEOQ-UHFFFAOYSA-N anthracene-1,5-diol Chemical compound C1=CC=C2C=C3C(O)=CC=CC3=CC2=C1O AGTBKJDELLDEOQ-UHFFFAOYSA-N 0.000 description 1
- 239000000010 aprotic solvent Substances 0.000 description 1
- 239000005441 aurora Substances 0.000 description 1
- SODJJEXAWOSSON-UHFFFAOYSA-N bis(2-hydroxy-4-methoxyphenyl)methanone Chemical compound OC1=CC(OC)=CC=C1C(=O)C1=CC=C(OC)C=C1O SODJJEXAWOSSON-UHFFFAOYSA-N 0.000 description 1
- 239000006172 buffering agent Substances 0.000 description 1
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- XGZGKDQVCBHSGI-UHFFFAOYSA-N butyl(triethoxy)silane Chemical compound CCCC[Si](OCC)(OCC)OCC XGZGKDQVCBHSGI-UHFFFAOYSA-N 0.000 description 1
- SXPLZNMUBFBFIA-UHFFFAOYSA-N butyl(trimethoxy)silane Chemical compound CCCC[Si](OC)(OC)OC SXPLZNMUBFBFIA-UHFFFAOYSA-N 0.000 description 1
- GNRBSDIBKIHSJH-UHFFFAOYSA-N butyl(tripropoxy)silane Chemical compound CCCC[Si](OCCC)(OCCC)OCCC GNRBSDIBKIHSJH-UHFFFAOYSA-N 0.000 description 1
- AFNPFLDWLMEASV-UHFFFAOYSA-N butyl-diethoxy-methylsilane Chemical compound CCCC[Si](C)(OCC)OCC AFNPFLDWLMEASV-UHFFFAOYSA-N 0.000 description 1
- OOSZILWKTQCRSZ-UHFFFAOYSA-N butyl-dimethoxy-methylsilane Chemical compound CCCC[Si](C)(OC)OC OOSZILWKTQCRSZ-UHFFFAOYSA-N 0.000 description 1
- TWUCQHPURWYYNQ-UHFFFAOYSA-N butyl-ethoxy-methoxysilane Chemical compound CCCC[SiH](OC)OCC TWUCQHPURWYYNQ-UHFFFAOYSA-N 0.000 description 1
- WHFVJENFZHIOKB-UHFFFAOYSA-N butyl-methyl-dipropoxysilane Chemical compound CCCC[Si](C)(OCCC)OCCC WHFVJENFZHIOKB-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000039 congener Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- DKXKWUWRJAEPGM-UHFFFAOYSA-N dibutyl dimethyl silicate Chemical compound CCCCO[Si](OC)(OC)OCCCC DKXKWUWRJAEPGM-UHFFFAOYSA-N 0.000 description 1
- DGPFXVBYDAVXLX-UHFFFAOYSA-N dibutyl(diethoxy)silane Chemical compound CCCC[Si](OCC)(OCC)CCCC DGPFXVBYDAVXLX-UHFFFAOYSA-N 0.000 description 1
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- ZDJARFQAQIQMOG-UHFFFAOYSA-N dibutyl(dipropoxy)silane Chemical compound CCCC[Si](CCCC)(OCCC)OCCC ZDJARFQAQIQMOG-UHFFFAOYSA-N 0.000 description 1
- QOQUOIGWXMZKEQ-UHFFFAOYSA-N dibutyl-ethoxy-methoxysilane Chemical compound CCCC[Si](OCC)(OC)CCCC QOQUOIGWXMZKEQ-UHFFFAOYSA-N 0.000 description 1
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- VGWJKDPTLUDSJT-UHFFFAOYSA-N diethyl dimethyl silicate Chemical compound CCO[Si](OC)(OC)OCC VGWJKDPTLUDSJT-UHFFFAOYSA-N 0.000 description 1
- WXAYXYTUOFVMKE-UHFFFAOYSA-N diethyl dipropyl silicate Chemical compound CCCO[Si](OCC)(OCC)OCCC WXAYXYTUOFVMKE-UHFFFAOYSA-N 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- VSYLGGHSEIWGJV-UHFFFAOYSA-N diethyl(dimethoxy)silane Chemical compound CC[Si](CC)(OC)OC VSYLGGHSEIWGJV-UHFFFAOYSA-N 0.000 description 1
- GDKYIZVVUAWETK-UHFFFAOYSA-N diethyl-methoxy-propoxysilane Chemical compound CCCO[Si](CC)(CC)OC GDKYIZVVUAWETK-UHFFFAOYSA-N 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- PKTOVQRKCNPVKY-UHFFFAOYSA-N dimethoxy(methyl)silicon Chemical compound CO[Si](C)OC PKTOVQRKCNPVKY-UHFFFAOYSA-N 0.000 description 1
- XKRPWHZLROBLDI-UHFFFAOYSA-N dimethoxy-methyl-propylsilane Chemical compound CCC[Si](C)(OC)OC XKRPWHZLROBLDI-UHFFFAOYSA-N 0.000 description 1
- HOXUFWMHAIJENN-UHFFFAOYSA-N dimethyl dipropyl silicate Chemical compound CCCO[Si](OC)(OC)OCCC HOXUFWMHAIJENN-UHFFFAOYSA-N 0.000 description 1
- ZIDTUTFKRRXWTK-UHFFFAOYSA-N dimethyl(dipropoxy)silane Chemical compound CCCO[Si](C)(C)OCCC ZIDTUTFKRRXWTK-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- ZZVUWRFHKOJYTH-UHFFFAOYSA-N diphenhydramine Chemical compound C=1C=CC=CC=1C(OCCN(C)C)C1=CC=CC=C1 ZZVUWRFHKOJYTH-UHFFFAOYSA-N 0.000 description 1
- SACPKRUZWRIEBW-UHFFFAOYSA-N dipropoxysilane Chemical compound CCCO[SiH2]OCCC SACPKRUZWRIEBW-UHFFFAOYSA-N 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- KYTKNYFOYOZXAZ-UHFFFAOYSA-N ethoxy-ethyl-methoxy-propylsilane Chemical compound CCC[Si](CC)(OC)OCC KYTKNYFOYOZXAZ-UHFFFAOYSA-N 0.000 description 1
- PCHYDOWKCXEERO-UHFFFAOYSA-N ethoxy-methoxy-dipropylsilane Chemical compound CCC[Si](CCC)(OC)OCC PCHYDOWKCXEERO-UHFFFAOYSA-N 0.000 description 1
- BNFBSHKADAKNSK-UHFFFAOYSA-N ethyl(dipropoxy)silane Chemical compound CCCO[SiH](CC)OCCC BNFBSHKADAKNSK-UHFFFAOYSA-N 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- KVFVBPYVNUCWJX-UHFFFAOYSA-M ethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)C KVFVBPYVNUCWJX-UHFFFAOYSA-M 0.000 description 1
- KUCGHDUQOVVQED-UHFFFAOYSA-N ethyl(tripropoxy)silane Chemical compound CCCO[Si](CC)(OCCC)OCCC KUCGHDUQOVVQED-UHFFFAOYSA-N 0.000 description 1
- HTSRFYSEWIPFNI-UHFFFAOYSA-N ethyl-dimethoxy-methylsilane Chemical compound CC[Si](C)(OC)OC HTSRFYSEWIPFNI-UHFFFAOYSA-N 0.000 description 1
- MXIPHWDAHRGDRK-UHFFFAOYSA-N ethyl-dimethoxy-propylsilane Chemical compound CCC[Si](CC)(OC)OC MXIPHWDAHRGDRK-UHFFFAOYSA-N 0.000 description 1
- UNBRJJYHSVNZBW-UHFFFAOYSA-N ethyl-methoxy-propoxysilane Chemical compound CCCO[SiH](CC)OC UNBRJJYHSVNZBW-UHFFFAOYSA-N 0.000 description 1
- GXAOCGRUWCYNML-UHFFFAOYSA-N ethyl-methyl-dipropoxysilane Chemical compound CCCO[Si](C)(CC)OCCC GXAOCGRUWCYNML-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000003951 lactams Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- NJISVYSHLYACRT-UHFFFAOYSA-N methoxy-methyl-phenoxysilane Chemical compound CO[SiH](C)Oc1ccccc1 NJISVYSHLYACRT-UHFFFAOYSA-N 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- RJMRIDVWCWSWFR-UHFFFAOYSA-N methyl(tripropoxy)silane Chemical compound CCCO[Si](C)(OCCC)OCCC RJMRIDVWCWSWFR-UHFFFAOYSA-N 0.000 description 1
- KTDMLSMSWDJKGA-UHFFFAOYSA-M methyl(tripropyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](C)(CCC)CCC KTDMLSMSWDJKGA-UHFFFAOYSA-M 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical group CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 1
- ABMFBCRYHDZLRD-UHFFFAOYSA-N naphthalene-1,4-dicarboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=C(C(O)=O)C2=C1 ABMFBCRYHDZLRD-UHFFFAOYSA-N 0.000 description 1
- KHARCSTZAGNHOT-UHFFFAOYSA-N naphthalene-2,3-dicarboxylic acid Chemical compound C1=CC=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 KHARCSTZAGNHOT-UHFFFAOYSA-N 0.000 description 1
- RXOHFPCZGPKIRD-UHFFFAOYSA-N naphthalene-2,6-dicarboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(C(=O)O)=CC=C21 RXOHFPCZGPKIRD-UHFFFAOYSA-N 0.000 description 1
- WPUMVKJOWWJPRK-UHFFFAOYSA-N naphthalene-2,7-dicarboxylic acid Chemical compound C1=CC(C(O)=O)=CC2=CC(C(=O)O)=CC=C21 WPUMVKJOWWJPRK-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- GRNRCQKEBXQLAA-UHFFFAOYSA-M triethyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CCO GRNRCQKEBXQLAA-UHFFFAOYSA-M 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- OZWKZRFXJPGDFM-UHFFFAOYSA-N tripropoxysilane Chemical compound CCCO[SiH](OCCC)OCCC OZWKZRFXJPGDFM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Abstract
本发明公开了一种洗涤液,所述洗涤液,是在形成双金属镶嵌结构的过程中,蚀刻层合在具有金属层的基板上的低电介质层(low-k层),形成第1蚀刻空间,在所述第1蚀刻空间内填充保护层后,再部分地蚀刻低电介质层和保护层,形成连通所述第1蚀刻空间的第2蚀刻空间后,用于除去所述第1蚀刻空间内残存的保护层的洗涤液,所述洗涤液含有(a)1~25质量%的TMAH、胆碱等季铵氢氧化物、(b)30~70质量%的水溶性有机溶剂及(c)20~60质量%的水。本发明的洗涤液具有如下二方面效果,即在设置了金属层(Cu层等)和低电介质层的基板上形成金属配线的过程中,可以很好地除去用于形成双金属镶嵌结构的保护层,而且不造成低电介质层损坏。
Description
技术领域
本发明涉及用于形成双金属镶嵌结构工艺中的洗涤液及基板处理方法。本发明的洗涤液适用于IC或LSI等半导体元件的制造。
背景技术
IC或LSI等半导体元件是如下制造的:由CVD蒸镀等在硅片等基板上形成导电性金属膜、绝缘膜或低电介质膜,再在其上均匀地涂布光致抗蚀剂,选择性地进行曝光、显影处理,形成光致抗蚀剂图案,以此图案为掩模,选择性地蚀刻上述经CVD蒸镀形成的导电性金属膜、绝缘膜或低电介质膜,形成微细电路后,用剥离液除去不需要的光致抗蚀剂层而制成。
近年来,随着半导体元件高集成化和芯片尺寸的缩小化,在配线电路微细化及多层化的发展过程中,开始重视起因于在半导体元件中使用的金属膜电阻(配线电阻)和配线容量的配线延迟等问题。因此,作为配线材料,提出了使用电阻比以前主要使用的铝(Al)还低的金属如铜(Cu)等的方案。最近,逐渐开始使用采用Al配线(Al、Al合金等,以Al为主要成分的金属配线)和Cu配线(以Cu为主要成分的金属配线)这样2种设计。
特别是Cu金属配线的形成中,由于Cu的耐腐蚀性低,而采用如下方法形成:利用双金属镶嵌技术,不对Cu进行蚀刻,形成Cu多层配线。作为双金属镶嵌技术提出了各种方案,其中的一例如下所述,但是并不限于此方法。
即,在基板上设置Cu层后,多层层合低电介质膜、绝缘膜等层间膜,然后,由光刻技术在最上层形成光致抗蚀剂图案。所述光致抗蚀剂图案形成用来形成过渡孔(viahole)的掩模图案,并且在过渡孔形成区域形成曝光部。然后,以光致抗蚀剂图案为掩模,蚀刻由低电介质膜、绝缘膜等构成的多层层合体,形成与Cu层连通的过渡孔。接下来,剥离光致抗蚀剂图案。然后,在所述过渡孔内填充烷氧基硅烷材料等构成的保护层(sacrificial material)。
然后,在残存的多层层合体的最上层形成用于形成沟槽图案的光致抗蚀剂图案(掩模图案),以此为掩模,部分蚀刻低电介质膜、绝缘膜等和保护层至所希望的深度,形成与过渡孔连通的配线用沟(沟槽)。接下来,洗涤·除去过渡孔内残存的保护层。然后,剥落光致抗蚀剂图案后,通过电镀等在沟槽内填充Cu,形成多层Cu配线。
这样的双金属镶嵌方法的形成过程中,不仅必须完全除去·洗涤保护层,还有必要抑制对双金属镶嵌结构中具有曝光部的低电介质层的损害。
到目前为止,为除去形成双金属镶嵌结构中的保护层,使用含缓冲剂的氢氟酸等(例如参见专利文献1,专利文献2),但是使用所述除去液时,存在对低电介质层的损害抑制不够充分的问题。
另外,作为光刻法领域内的季铵类剥落液,可以举出:季铵盐和二甲亚砜和水的混合物(特别是0.5质量%氢氧化四甲基铵的二甲亚砜溶液(含水1.5质量%))组成的剥离液(专利文献3);含有二甲亚砜、环丁砜等极性非质子溶剂、和季铵氢氧化物等侵蚀性碱的剥离组合物(专利文献4);由二甲亚砜、醇胺、水和季铵氢氧化物构成的剥离液(专利文献5)等,但都是用于除去光致抗蚀剂等有机膜的,对双金属镶嵌方法中保护层的除去没有任何公开,也没有揭示能够抑制对低电介质层损害的效果。
专利文献1:美国专利第6365529号说明书(第8段2~6行)
专利文献2:美国专利第6329118号说明书(第7段57~61行)
专利文献3:特开平8-301911号公报([0032]、[0043])
专利文献4:特开2001-324823号公报
专利文献5:特开平7-28254号公报
发明内容
本发明的目的是提供一种洗涤液,所述洗涤液能够平衡性优良地实现如下效果:在设置了金属层(Cu层等)和低电介质膜的基板上形成金属配线过程中,可以很好地除去用于形成双金属镶嵌结构的保护层,且不对低电介质层造成损害。
为了解决上述课题,本发明提供一种洗涤液,是在双金属镶嵌结构形成过程中,蚀刻层合在具有金属层的基板上的低电介质层,形成第1蚀刻空间,在所述第1蚀刻空间内填充保护层后,再部分地蚀刻低电介质层和保护层,在形成与所述第1蚀刻空间连通的第2蚀刻空间后,用于除去所述第1蚀刻空间内残存的保护层的洗涤液,所述洗涤液含有(a)1~25质量%的下述通式(I)表示的季铵氢氧化物,(b)30~70质量%的水溶性有机溶剂,及(c)20~60质量%的水。
(式中,R1、R2、R3、R4分别独立地表示碳原子数1~4的烷基或羟烷基)
另外,本发明提供一种具有双金属镶嵌结构的基板的处理方法,所述方法如下:蚀刻层合在具有金属层的基板上的低电介质层,形成第1蚀刻空间,在所述第1蚀刻空间内填充保护层后,再部分地蚀刻低电介质层和保护层,在形成与所述第1蚀刻空间连通的第2蚀刻空间后,使洗涤液与所述第1蚀刻空间内残存的保护层接触,除去所述保护层。
具体实施方式
本发明的洗涤液用于在具有金属层、低电介质层的基板上形成双金属镶嵌结构的工艺中除去保护层,其中(a)成分是下述通式(I)表示的季铵氢氧化物。
(式中,R1、R2、R3、R4分别独立地表示碳原子数1~4的烷基或羟烷基)
具体而言,可以举出氢氧化四甲基铵(=TMAH),氢氧化四乙基铵,氢氧化四丙基铵,氢氧化四丁基铵,氢氧化一甲基三丙基铵,氢氧化三甲基乙基铵,氢氧化(2-羟乙基)三甲基铵(=胆碱),氢氧化(2-羟乙基)三乙基铵,氢氧化(2-羟乙基)三丙基铵,氢氧化(1-羟丙基)三甲基铵等。其中,从对保护层溶解性高的方面考虑,优选TMAH、胆碱等,最优选TMAH。(a)成分可以使用1种、2种或2种以上。
(a)成分在本发明洗涤液中的配合量为1~25质量%,优选8~12质量%。(a)成分的配合量不足1质量%时,对保护层的溶解性能低,难以充分地除去;另一方面,超过25质量%时,对低电介质层造成损害。
作为(b)的水溶性有机溶剂,只要是与水或其他配合成分有混和性的有机溶剂即可,可以使用目前为止惯用的溶剂。具体可以举出二甲亚砜等亚砜类;二甲砜、二乙砜、二(2-羟乙基)砜、四亚甲基砜等砜类;N,N-二甲基甲酰胺、N-甲基甲酰胺、N,N-二甲替乙酰胺、N-甲基乙酰胺、N,N-二乙替乙酰胺等酰胺类;N-甲基-2-吡咯烷酮、N-乙基-2-吡咯烷酮、N-丙基-2-吡咯烷酮、N-羟甲基-2-吡咯烷酮、N-羟乙基-2-吡咯烷酮等内酰胺类;1,3-二甲基-2-咪唑啉酮、1,3-二乙基-2-咪唑啉酮、1,3-二异丙基-2-咪唑啉酮等咪唑啉酮类;乙二醇、乙二醇一甲醚、乙二醇一乙醚、乙二醇一丁醚、乙二醇单甲醚乙酸酯、乙二醇单乙醚乙酸酯、二甘醇、二甘醇一甲醚、二甘醇一乙醚、二甘醇一丁醚、丙二醇一甲醚、丙二醇一乙醚、丙二醇一丙醚、丙二醇一丁醚等多元醇类及其衍生物等。其中优选二甲亚砜、N-甲基-2-吡咯烷酮等。(b)成分可以使用1种、2种或2种以上。
本发明洗涤液中(b)成分的配合量为30~70质量%,优选40~60质量%。(b)成分的配合量不足30质量%时,对低电介质层造成损害;另一方面,超过70质量%时,对保护层的溶解性能降低,难以充分除去。
作为本发明洗涤液中(c)成分的水的配合量为20~60质量%,优选30~50质量%。(c)成分的配合量不足20质量%时,对保护层的溶解性能降低,难以充分除去;另一方面,超过60质量%时,对低电介质层造成损害。
本发明洗涤液中除了上述(a)~(c)成分之外,也可以再配合(d)含有巯基的化合物、和/或(e)下述通式(II)表示的季铵氢氧化物(但为(a)成分以外的化合物)。
(式中,R5、R6、R7、R8分别独立地表示碳原子数1~20的烷基或羟烷基(但R5、R6、R7、R8中至少有1个为碳原子数10或10以上的烷基,或R5、R6、R7、R8中至少有2个为碳原子数2~5的羟烷基)
作为上述(d)成分,优选具有下述结构的化合物:与巯基结合的碳原子的α位、β位中的至少一方具有羟基和/或羧基。对于这样的化合物,具体而言,作为优选可以举出1-硫甘油、3-(2-氨基苯硫基)-2-羟丙基硫醇、3-(2-羟乙基硫基)-2-羟丙基硫醇、2-巯基丙酸、及3-巯基丙酸等。其中特别优选使用1-硫甘油。(d)成分可以使用1种、2种或2种以上。
配合(d)成分的情况下,在本发明洗涤液中其配合量优选为0.01~15质量%,特别优选为0.1~10质量%。通过配合(d)成分,能够更有效地抑制对Cu的腐蚀。
作为上述(e)成分,具体来说,优选使用氢氧化十六烷基三甲基铵、氢氧化三(2-羟乙基)甲基铵、氢氧化四(2-羟乙基)铵等。(e)成分可以使用1种、2种或2种以上。
配合(e)成分的情况下,本发明洗涤液中其配合量优选为0.01~15质量%,特别优选为0.1~10质量%。通过配合(e)成分,能够更有效地抑制对Cu的腐蚀。
下面,示出本发明洗涤液的使用形态、使用所述洗涤液的本发明基板处理方法的具体形态之一例。但是本发明并不限于此示例。
本发明中使用的双金属镶嵌法可以使用公知的方法,可以包括下述任一方法:先形成过渡孔后再形成沟槽(配线用沟)的“过渡孔优先法(Via first)”法,形成沟槽后再形成过渡孔的“沟槽优先法(Trenchfirst)”法。
具体而言,例如,在基板上设置金属层(导电体层)后,设置阻隔层(蚀刻停止层),在所述阻隔层上,层合低电介质层后,在所述低电介质层上设置光致抗蚀剂层,接下来对所述光致抗蚀剂层进行选择性曝光、显影,形成光致抗蚀剂图案。
接下来,在“过渡孔优先(Via first)”法中,以此光致抗蚀剂图案为掩模,蚀刻低电介质层,使之与基板上的金属层连通,形成过渡孔(第1蚀刻空间)后,通过研磨处理,剥离光致抗蚀剂图案。接下来,在所述过渡孔内填充保护层。然后,在残存的低电介质层上形成新的光致抗蚀剂图案,以此为掩模,部分蚀刻低电介质层和保护层至所希望的深度,形成连通到所述过渡孔的沟槽(第2蚀刻空间)。
另一方面,在“沟槽优先法(Trench first)”法中,首先,以所述光致抗蚀剂图案为掩模,蚀刻低电介质层至规定厚度,形成沟槽(第1蚀刻空间)后,通过研磨处理,剥离光致抗蚀剂图案。接下来,在所述沟槽图案内填充保护层。然后,在残存的低电介质层上形成新的光致抗蚀剂图案,以此为掩模,使之与沟槽连通,蚀刻低电介质层和保护层,形成下部与基板上的Cu层连通的过渡孔(第2蚀刻空间)。
上述任一工序后,分别使“过渡孔优先法(Via first)”法中过渡孔内填充的保护层、“沟槽优先法(Trench first)”法中沟槽内填充的保护层与本发明洗涤液接触而除去。在经过这样处理的基板的过渡孔、沟槽内填充金属,制成多层金属配线基板。
作为所述金属层,可以举出Cu、Cu合金、Al、Al合金等。金属层的形成通过CVD蒸镀、电镀法等进行,但是不特别限于此。
作为所述阻隔(蚀刻停止)层,可以举出SiN、SiCN、Ta、TaN等。
作为所述低电介质层,优选材料可以举出“金刚黑(BlackDiamond)”(Applied Materials公司制)、“Coral”(Novelus Systems公司制)、“Aurora”(日本ASM公司制)等掺杂碳的氧化硅(SiOC)类材料;“OCD T-7”、“OCD T-9”、“OCD T-11”、“OCDT-31”、“OCD T-39”(均为东京应化工业公司制)等MSQ(甲基倍半硅氧烷(Methylsilsesquioxane))类材料;“OCD T-12”、“OCD T-32”(均为东京应化工业公司制)等HSQ(羟基倍半硅氧烷(Hydroxysilsesquioxane))类材料等低介电常数材料(low-k材料),但不限定于这些示例。
也可以在金属层上直接形成低电介质层。低电介质层的形成可以如下进行:涂布上述例示的低介电常数材料(low-k材料)后,通常在350℃或350℃以上的高温下焙烧,使之结晶化而形成。
作为光致抗蚀剂,适用KrF、ArF、F2准分子激光、或电子射线用途惯用的光致抗蚀剂材料。光致抗蚀剂的形成可以由常规的光刻技术进行。
低电介质层的蚀刻可以采用干式蚀刻等方式,按照常规方法进行。光致抗蚀剂图案的研磨也可以按照常规方法进行。低电介质层在介电常数(k)为3或3以下程度的低介电常数的情况下,由于耐研磨性降低,也可以不进行研磨,用公知的抗蚀剂剥落液等除去光致抗蚀剂图案。
然后,在形成的第1蚀刻空间(过渡孔或沟槽)内填充保护层,此保护层材料,可以使用例如旋涂玻璃材料(spin-on-glass material)、或在所述旋涂玻璃材料中添加吸光性物质得到的材料。
作为所述的旋涂玻璃材料,可以举出将选自下述化合物(i~iii)中至少一种的化合物在酸催化剂存在下水解得到的材料。但是并不限于此示例。
(i)下述通式(III)表示的化合物
Si(OR9)a(OR10)b(OR11)c(OR12)d (III)
(式中,R9、R10、R11及R12分别独立地表示碳原子数1~4的烷基或苯基;a、b、c及d为0~4的整数(但满足a+b+c+d=4的条件))
(ii)下述通式(IV)表示的化合物
R13Si(OR14)e(OR15)f(OR16)g (IV)
(式中,R13表示氢原子、碳原子数1~4的烷基或苯基;R14、R15及R16分别独立地表示碳原子数1~4的烷基或苯基;e、f及g为0~3的整数(但满足e+f+g=3的条件))
(iii)下述通式(V)表示的化合物
R17R18Si(OR19)h(OR20)i (V)
(式中,R17及R18分别独立地表示氢原子、碳原子数1~4的烷基或苯基;R19及R20分别独立地表示碳原子数1~4的烷基或苯基;h及i为0~2的整数(但满足h+i=2的条件))
作为上述(i)的化合物,例如有四甲氧基硅烷、四乙氧基硅烷、四丙氧基硅烷、四丁氧基硅烷、四苯氧基硅烷、三甲氧基一乙氧基硅烷、二甲氧基二乙氧基硅烷、三乙氧基一甲氧基硅烷、三甲氧基一丙氧基硅烷、一甲氧基三丁氧基硅烷、一甲氧基三苯氧基硅烷、二甲氧基二丙氧基硅烷、三丙氧基一甲氧基硅烷、三甲氧基一丁氧基硅烷、二甲氧基二丁氧基硅烷、三乙氧基一丙氧基硅烷、二乙氧基二丙氧基硅烷、三丁氧基一丙氧基硅烷、二甲氧基一乙氧基一丁氧基硅烷、二乙氧基一甲氧基一丁氧基硅烷、二乙氧基一丙氧基一丁氧基硅烷、二丙氧基一甲氧基一乙氧基硅烷、二丙氧基一甲氧基一丁氧基硅烷、二丙氧基一乙氧基一丁氧基硅烷、二丁氧基一甲氧基一乙氧基硅烷、二丁氧基一乙氧基一丙氧基硅烷、一甲氧基一乙氧基一丙氧基一丁氧基硅烷等。
作为上述(ii)的化合物,例如有三甲氧基硅烷、三乙氧基硅烷、三丙氧基硅烷、三苯氧基硅烷、二甲氧基一乙氧基硅烷、二乙氧基一甲氧基硅烷、二丙氧基一甲氧基硅烷、二丙氧基一乙氧基硅烷、二苯氧基一甲氧基硅烷、二苯氧基一乙氧基硅烷、二苯氧基一丙氧基硅烷、甲氧基乙氧基丙氧基硅烷、一丙氧基二甲氧基硅烷、一丙氧基二乙氧基硅烷、一丁氧基二甲氧基硅烷、一苯氧基二乙氧基硅烷、甲基三甲氧基硅烷、甲基三乙氧基硅烷、甲基三丙氧基硅烷、乙基三甲氧基硅烷、乙基三丙氧基硅烷、乙基三苯氧基硅烷、丙基三甲氧基硅烷、丙基三乙氧基硅烷、丙基三苯氧基硅烷、丁基三甲氧基硅烷、丁基三乙氧基硅烷、丁基三丙氧基硅烷、丁基三苯氧基硅烷、甲基一甲氧基二乙氧基硅烷、乙基一甲氧基二乙氧基硅烷、丙基一甲氧基二乙氧基硅烷、丁基一甲氧基二乙氧基硅烷、甲基一甲氧基二丙氧基硅烷、甲基一甲氧基二苯氧基硅烷、乙基一甲氧基二丙氧基硅烷、乙基一甲氧基二苯氧基硅烷、丙基一甲氧基二丙氧基硅烷、丙基一甲氧基二苯氧基硅烷、丁基一甲氧基二丙氧基硅烷、丁基一甲氧基二苯氧基硅烷、甲基甲氧基乙氧基丙氧基硅烷、丙基甲氧基乙氧基丙氧基硅烷、丁基甲氧基乙氧基丙氧基硅烷、甲基一甲氧基一乙氧基一丁氧基硅烷、乙基一甲氧基一乙氧基一丁氧基硅烷、丙基一甲氧基一乙氧基一丁氧基硅烷、丁基一甲氧基一乙氧基一丁氧基硅烷等。
作为上述(iii)的化合物,例如有二甲氧基硅烷、二乙氧基硅烷、二丙氧基硅烷、二苯氧基硅烷、甲氧基乙氧基硅烷、甲氧基丙氧基硅烷、甲氧基苯氧基硅烷、乙氧基丙氧基硅烷、乙氧基苯氧基硅烷、甲基二甲氧基硅烷、甲基甲氧基乙氧基硅烷、甲基二乙氧基硅烷、甲基甲氧基丙氧基硅烷、甲基甲氧基苯氧基硅烷、乙基二丙氧基硅烷、乙基甲氧基丙氧基硅烷、乙基二苯氧基硅烷、丙基二甲氧基硅烷、丙基甲氧基乙氧基硅烷、丙基乙氧基丙氧基硅烷、丙基二乙氧基硅烷、丙基二苯氧基硅烷、丁基二甲氧基硅烷、丁基甲氧基乙氧基硅烷、丁基二乙氧基硅烷、丁基乙氧基丙氧基硅烷、丁基二丙氧基硅烷、丁基甲基苯氧基硅烷、二甲基二甲氧基硅烷、二甲基甲氧基乙氧基硅烷、二甲基二乙氧基硅烷、二甲基二苯氧基硅烷、二甲基乙氧基丙氧基硅烷、二甲基二丙氧基硅烷、二乙基二甲氧基硅烷、二乙基甲氧基丙氧基硅烷、二乙基二乙氧基硅烷、二乙基乙氧基丙氧基硅烷、二丙基二甲氧基硅烷、二丙基二乙氧基硅烷、二丙基二苯氧基硅烷、二丁基二甲氧基硅烷、二丁基二乙氧基硅烷、二丁基二丙氧基硅烷、二丁基甲氧基苯氧基硅烷、甲基乙基二甲氧基硅烷、甲基乙基二乙氧基硅烷、甲基乙基二丙氧基硅烷、甲基乙基二苯氧基硅烷、甲基丙基二甲氧基硅烷、甲基丙基二乙氧基硅烷、甲基丁基二甲氧基硅烷、甲基丁基二乙氧基硅烷、甲基丁基二丙氧基硅烷、甲基乙基乙氧基丙氧基硅烷、乙基丙基二甲氧基硅烷、乙基丙基甲氧基乙氧基硅烷、二丙基二甲氧基硅烷、二丙基甲氧基乙氧基硅烷、丙基丁基二甲氧基硅烷、丙基丁基二乙氧基硅烷、二丁基甲氧基乙氧基硅烷、二丁基甲氧基丙氧基硅烷、二丁基乙氧基丙氧基硅烷等。
另外,作为能够添加到上述旋涂玻璃材料中的吸光性物质,作为优选可以举出结构中具有能够与上述(i)~(iii)化合物缩合的取代基的物质中的至少1种。作为这样的吸光性物质,可以举出砜类化合物、二苯甲酮类化合物、蒽类化合物、及萘类化合物等。特别优选至少具有2个羟基的双苯砜及二苯甲酮类化合物,至少具有1种选自羟基、羟烷基、及羧基的取代基的蒽类化合物,至少具有1种选自羟基、羧基的取代基的萘类化合物。
作为上述至少具有2个羟基的双苯砜类化合物,例如有双(羟苯基)砜类、双(多羟苯基)砜类。具体而言,可以举出双(4-羟苯基)砜、双(3,5-二甲基-4-羟苯基)砜、双(2,3-二羟苯基)砜、双(2,4-二羟苯基)砜、双(2,4-二羟基-6-甲基苯基)砜、双(5-氯-2,4-二羟苯基)砜、双(2,5-二羟苯基)砜、双(3,4-二羟苯基)砜、双(3,5-二羟苯基)砜、双(2,3,4-三羟苯基)砜、双(2,3,4-三羟基-6-甲基苯基)砜、双(5-氯-2,3,4-三羟苯基)砜、双(2,4,6-三羟苯基)砜、双(5-氯-2,3-二羟苯基)砜等。
作为上述至少具有2个羟基的二苯甲酮类化合物,例如有2,4-二羟基二苯甲酮、2,3,4-三羟基二苯甲酮、2,2’,4,’-四羟基二苯甲酮、2,2’,5,6’-四羟基二苯甲酮、2,2’-二羟基-4-甲氧基二苯甲酮、2,6-二羟基-4-甲氧基二苯甲酮、2,2’-二羟基-4,4’-二甲氧基二苯甲酮、4-二甲基氨基-2’,4’-二羟基二苯甲酮、4-二甲基氨基-3’,4’-二羟基二苯甲酮等。
作为上述至少具有1种选自羟基、羟烷基及羧基中的取代基的蒽类化合物,可以举出下述通式(VI)表示的化合物。
(式中,p为0~8的整数,q为0~10的整数,r为0~6的整数,s为0或1,但p、q及r不同时为0)
具体而言,例如有1-羟基蒽、9-羟基蒽、蒽-9-羧酸、1,2-二羟基蒽、1,2-二羟基-9-羧基蒽、1,5-二羟基蒽、1,5-二羟基-9-羧基蒽、9,10-二羟基蒽、1,2,3-三羟基蒽、1,2,3,4-四羟基蒽、1,2,3,4,5,6-六羟基蒽、1,2,3,4,5,6,7,8-八羟基蒽、1-羟甲基蒽、9-羟甲基蒽、9-羟乙基蒽、9-羟己基蒽、9-羟辛基蒽、9,10-二羟甲基蒽等。
作为上述至少具有1种选自羟基、羧基中的取代基的萘类化合物,具体而言,可以举出1-萘酚、2-萘酚、1-萘乙醇、2-萘乙醇、1,3-萘二醇、萘-1-羧酸、萘-2-羧酸、萘-1,4-二羧酸、萘-2,3-二羧酸,萘-2,6-二羧酸、萘-2,7-二羧酸、萘-1-醋酸等。
在第1蚀刻空间(过渡孔或沟槽)内填充所述旋涂玻璃材料后,在250℃或250℃以下较低的温度下焙烧制成保护层。
作为保护层材料的旋涂玻璃材料,优选具有与用于低电介质层的材料相同程度的蚀刻速度,可以使用与低电介质材料同种类的材料,但是,与上述那样高温焙烧低电介质层,使之结晶化而形成相反,由于在蚀刻后,最终会被除去,所以保护层是在比结晶化温度还低的较低温度下焙烧而成的。
然后,在低电介质层上形成新的光致抗蚀剂图案,以此为掩模,再按照常规方法,形成第2蚀刻空间(沟槽或过渡孔)。由此,形成双金属镶嵌结构,即与基板上的金属层连通的相互连接结构。
此时,有必要除去第1蚀刻空间内残存的保护层,通过与本发明的洗涤液接触,能够不损害上述蚀刻空间内露出的低电介质层部分,而完全除去保护层。
与洗涤液的接触可以采用通常的浸渍法、水坑(puddle)法、喷淋法等。接触时间,只要是足以除去保护层的时间即可,可以相应于接触方法作适当调整,通常在1~40分钟,20~80℃下进行,但并不限于此。
接下来,通过研磨处理等剥离电介质上的光致抗蚀剂图案,如上所述,低电介质层的介电常数(k)为3或3以下程度的低介电常数时,由于耐研磨性变低,所以也可以不进行研磨,用公知的抗蚀剂剥离液等除去光致抗蚀剂图案。
本发明的洗涤液对低电介质层(low-k层)的溶解性和对保护层的溶解性之差大,容易获得选择比。另外,与目前为止常用的保护层除去液稀氢氟酸溶液相比,对低电介质层(low-k层)造成的破坏极小。
接下来,通过实施例进一步详细地说明本发明,但本发明并不限定于这些例子。配合量如无特别限定,均表示质量%。
(实施例1~5、比较例1~5)
在形成了Cu层的基板上,形成作为第1层的由SiN膜构成的阻隔层、作为第2层的低电介质层(“OCD-T12”;东京应化工业公司制)、作为第3层的由SiN膜构成的阻隔层、作为第4层的低电介质层(“OCD-T12”;东京应化工业公司制),在其上通过光刻法形成光致抗蚀剂图案,以此为掩模,蚀刻第1~4层,形成连通Cu层的过渡孔。然后,在此过渡孔内填充(200℃焙烧)保护层(“OCD-T32”;东京应化工业公司制)后,以通过光刻法新形成的光致抗蚀剂图案为掩模进行蚀刻,形成沟槽。
将此基板在表1所示的洗涤液中进行浸渍(40℃,20分钟)处理后,用纯水冲洗。用SEM(扫描型电子显微镜)观察此时保护层的除去性(溶解性能)、低电介质层的损害(腐蚀)状态,进行评价。结果如表2所示。
保护层的除去性(溶解性能)、低电介质层的腐蚀状态分别如下评价。
[保护层的除去性(溶解性能)]
S:保护层被完全除去(过渡孔内完全看不到残存的残渣)
A:残留微量残渣
[低电介质层的腐蚀状态]
S:完全未发生腐蚀
A:可见极少的低电介质层表面腐蚀(皲裂)
B:发生低电介质层表面腐蚀
表1
表1中各成分如下所示。
TMAH:氢氧化四甲基铵
胆碱(Choline):氢氧化(2-羟乙基)三甲基铵
DMSO:二甲亚砜
HDTMAH:氢氧化十六烷基三甲基铵
表2
保护层的除去性 | 对低电介质层的腐蚀状态 | |
实施例1 | S | S |
实施例2 | S | S |
实施例3 | S | S |
实施例4 | S | S |
实施例5 | S | S |
比较例1 | S | B |
比较例2 | S | B |
比较例3 | A | S |
比较例4 | S | B |
比较例5 | A | S |
如上所述,根据本发明,能够得到一种洗涤液,所述洗涤液能够平衡性优良地实现下述效果,即在设置了金属层和低电介质膜的基板上形成金属配线的过程中,可以很好地除去用于形成双金属镶嵌结构的保护层,而且不损害低电介质层。
Claims (7)
2、如权利要求1所述的洗涤液,其中所述旋涂玻璃材料中含有选自砜类化合物、二苯甲酮类化合物、蒽类化合物、及萘类化合物中的至少一种吸光性物质。
3、如权利要求1所述的洗涤液,其中所述(a)成分为氢氧化四甲基铵和/或氢氧化(2-羟乙基)三甲基铵。
4、如权利要求1所述的洗涤液,其中所述(b)成分为二甲亚砜。
5、如权利要求1所述的洗涤液,其中含有8~12质量%的(a)成分、40~60质量%的(b)成分和30~50质量%的(c)成分。
7、一种处理具有双金属镶嵌结构的基板的方法,其特征在于,蚀刻层合在具有金属层的基板上的低电介质层,形成第1蚀刻空间,在所述第1蚀刻空间内填充保护层后,再部分地蚀刻低电介质层和保护层,形成连通所述第1蚀刻空间的第2蚀刻空间后,使残存在所述第1蚀刻空间内的保护层与权利要求1~6任一项中记载的洗涤液相接触,除去保护层。
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US8449681B2 (en) * | 2010-12-16 | 2013-05-28 | Intermolecular, Inc. | Composition and method for removing photoresist and bottom anti-reflective coating for a semiconductor substrate |
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US20190048293A1 (en) * | 2016-03-01 | 2019-02-14 | Tokyo Ohka Kogyo Co., Ltd. | Cleaning solution and cleaning method for a semiconductor substrate or device |
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Family Cites Families (26)
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IL80311A (en) * | 1986-10-15 | 1990-11-05 | Erez Forensic Technology Ltd | Test kit for the detection of explosives |
US5988186A (en) * | 1991-01-25 | 1999-11-23 | Ashland, Inc. | Aqueous stripping and cleaning compositions |
JPH07247498A (ja) | 1994-03-09 | 1995-09-26 | Mitsubishi Gas Chem Co Inc | 半導体装置用洗浄剤及び配線パターンの形成方法 |
JP3575109B2 (ja) | 1995-05-10 | 2004-10-13 | Jsr株式会社 | バンプ形成用材料 |
JP2911792B2 (ja) * | 1995-09-29 | 1999-06-23 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
JP3236220B2 (ja) * | 1995-11-13 | 2001-12-10 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
US5911836A (en) * | 1996-02-05 | 1999-06-15 | Mitsubishi Gas Chemical Company, Inc. | Method of producing semiconductor device and rinse for cleaning semiconductor device |
JPH10239865A (ja) * | 1997-02-24 | 1998-09-11 | Jsr Corp | ネガ型フォトレジスト用剥離液組成物 |
US6268323B1 (en) * | 1997-05-05 | 2001-07-31 | Arch Specialty Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
KR100610387B1 (ko) * | 1998-05-18 | 2006-08-09 | 말린크로트 베이커, 인코포레이티드 | 초소형 전자 기판 세정용 실리케이트 함유 알칼리성 조성물 |
US6417112B1 (en) * | 1998-07-06 | 2002-07-09 | Ekc Technology, Inc. | Post etch cleaning composition and process for dual damascene system |
JP2000031118A (ja) | 1998-07-08 | 2000-01-28 | Toshiba Corp | パターン形成方法 |
US6974766B1 (en) * | 1998-10-01 | 2005-12-13 | Applied Materials, Inc. | In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application |
KR200172673Y1 (ko) * | 1999-03-20 | 2000-03-15 | 윤기흥 | 휴대용냉보온물통 |
US6329118B1 (en) * | 1999-06-21 | 2001-12-11 | Intel Corporation | Method for patterning dual damascene interconnects using a sacrificial light absorbing material |
JP3410403B2 (ja) | 1999-09-10 | 2003-05-26 | 東京応化工業株式会社 | ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法 |
JP3514435B2 (ja) | 1999-12-28 | 2004-03-31 | 東京応化工業株式会社 | ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法 |
JP3339575B2 (ja) * | 2000-01-25 | 2002-10-28 | 日本電気株式会社 | 剥離剤組成物および剥離方法 |
US6319835B1 (en) | 2000-02-25 | 2001-11-20 | Shipley Company, L.L.C. | Stripping method |
US6531436B1 (en) * | 2000-02-25 | 2003-03-11 | Shipley Company, L.L.C. | Polymer removal |
US6417147B2 (en) * | 2000-02-29 | 2002-07-09 | Showa Denko K.K. | Cleaning agent composition, method for cleaning and use thereof |
US6410437B1 (en) | 2000-06-30 | 2002-06-25 | Lam Research Corporation | Method for etching dual damascene structures in organosilicate glass |
TW554258B (en) * | 2000-11-30 | 2003-09-21 | Tosoh Corp | Resist stripper |
MY131912A (en) * | 2001-07-09 | 2007-09-28 | Avantor Performance Mat Inc | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
JP3403187B2 (ja) * | 2001-08-03 | 2003-05-06 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
US20030138737A1 (en) * | 2001-12-27 | 2003-07-24 | Kazumasa Wakiya | Photoresist stripping solution and a method of stripping photoresists using the same |
-
2002
- 2002-09-09 JP JP2002262565A patent/JP4282054B2/ja not_active Expired - Fee Related
-
2003
- 2003-09-08 KR KR1020030062499A patent/KR100810953B1/ko active IP Right Grant
- 2003-09-09 CN CNB031565794A patent/CN100504620C/zh not_active Expired - Lifetime
- 2003-09-09 TW TW092124919A patent/TW200405133A/zh not_active IP Right Cessation
- 2003-09-09 US US10/657,177 patent/US20040121937A1/en not_active Abandoned
-
2006
- 2006-06-23 US US11/473,030 patent/US20060241012A1/en not_active Abandoned
-
2009
- 2009-02-12 US US12/379,099 patent/US20090156005A1/en not_active Abandoned
- 2009-11-12 US US12/591,210 patent/US20100051582A1/en not_active Abandoned
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2010
- 2010-06-09 US US12/801,452 patent/US8158568B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100810953B1 (ko) | 2008-03-10 |
TWI298429B (zh) | 2008-07-01 |
US8158568B2 (en) | 2012-04-17 |
US20040121937A1 (en) | 2004-06-24 |
CN1495535A (zh) | 2004-05-12 |
JP4282054B2 (ja) | 2009-06-17 |
US20090156005A1 (en) | 2009-06-18 |
US20100248477A1 (en) | 2010-09-30 |
JP2004103771A (ja) | 2004-04-02 |
TW200405133A (en) | 2004-04-01 |
US20060241012A1 (en) | 2006-10-26 |
US20100051582A1 (en) | 2010-03-04 |
KR20040030291A (ko) | 2004-04-09 |
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