CN100492527C - 用于磁电阻存储器的写入驱动器 - Google Patents

用于磁电阻存储器的写入驱动器 Download PDF

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Publication number
CN100492527C
CN100492527C CNB2004800254483A CN200480025448A CN100492527C CN 100492527 C CN100492527 C CN 100492527C CN B2004800254483 A CNB2004800254483 A CN B2004800254483A CN 200480025448 A CN200480025448 A CN 200480025448A CN 100492527 C CN100492527 C CN 100492527C
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CN
China
Prior art keywords
transistor
circuit
line
storer
writing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB2004800254483A
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English (en)
Chinese (zh)
Other versions
CN1846275A (zh
Inventor
卓塞弗·J.·纳哈斯
托马斯·W.·安德烈
奇特拉·K.·萨布拉马尼安
哈尔伯特·林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Everspin Technologies Inc
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Everspin Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Everspin Technologies Inc filed Critical Everspin Technologies Inc
Publication of CN1846275A publication Critical patent/CN1846275A/zh
Application granted granted Critical
Publication of CN100492527C publication Critical patent/CN100492527C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1695—Protection circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1084—Data input buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1096—Write circuits, e.g. I/O line write drivers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
CNB2004800254483A 2003-09-05 2004-07-15 用于磁电阻存储器的写入驱动器 Expired - Lifetime CN100492527C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/656,676 2003-09-05
US10/656,676 US6842365B1 (en) 2003-09-05 2003-09-05 Write driver for a magnetoresistive memory

Publications (2)

Publication Number Publication Date
CN1846275A CN1846275A (zh) 2006-10-11
CN100492527C true CN100492527C (zh) 2009-05-27

Family

ID=33553000

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004800254483A Expired - Lifetime CN100492527C (zh) 2003-09-05 2004-07-15 用于磁电阻存储器的写入驱动器

Country Status (7)

Country Link
US (1) US6842365B1 (cg-RX-API-DMAC7.html)
EP (1) EP1665277A4 (cg-RX-API-DMAC7.html)
JP (1) JP4554611B2 (cg-RX-API-DMAC7.html)
KR (2) KR101113096B1 (cg-RX-API-DMAC7.html)
CN (1) CN100492527C (cg-RX-API-DMAC7.html)
TW (1) TWI348161B (cg-RX-API-DMAC7.html)
WO (1) WO2005027135A1 (cg-RX-API-DMAC7.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6956764B2 (en) * 2003-08-25 2005-10-18 Freescale Semiconductor, Inc. Method of writing to a multi-state magnetic random access memory cell
US7206223B1 (en) 2005-12-07 2007-04-17 Freescale Semiconductor, Inc. MRAM memory with residual write field reset
US7280388B2 (en) * 2005-12-07 2007-10-09 Nahas Joseph J MRAM with a write driver and method therefor
US7746686B2 (en) 2006-04-21 2010-06-29 Honeywell International Inc. Partitioned random access and read only memory
JP2010186559A (ja) * 2010-06-04 2010-08-26 Renesas Electronics Corp 薄膜磁性体記憶装置
KR102661099B1 (ko) 2018-11-08 2024-04-29 삼성전자주식회사 전송 소자를 포함하는 불휘발성 메모리 장치
CN111951848B (zh) * 2020-08-18 2023-09-01 上海交通大学 一种嵌入式动态随机存储器增益单元及其操作方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1295332A (zh) * 1999-10-29 2001-05-16 惠普公司 包含数字检测放大器的mram设备
CN1349226A (zh) * 2000-10-17 2002-05-15 三菱电机株式会社 容易控制数据写入电流的薄膜磁性体存储器

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4544878A (en) * 1983-10-04 1985-10-01 At&T Bell Laboratories Switched current mirror
US6693882B1 (en) 1999-01-26 2004-02-17 International Business Machines Corporation Frequency correction burst detection
US6343032B1 (en) * 1999-07-07 2002-01-29 Iowa State University Research Foundation, Inc. Non-volatile spin dependent tunnel junction circuit
JP3800925B2 (ja) * 2000-05-15 2006-07-26 日本電気株式会社 磁気ランダムアクセスメモリ回路
JP2002216468A (ja) * 2000-11-08 2002-08-02 Canon Inc 半導体記憶装置
JP3920565B2 (ja) * 2000-12-26 2007-05-30 株式会社東芝 磁気ランダムアクセスメモリ
JP4712204B2 (ja) * 2001-03-05 2011-06-29 ルネサスエレクトロニクス株式会社 記憶装置
US6574137B2 (en) * 2001-08-30 2003-06-03 Micron Technology, Inc. Single ended row select for a MRAM device
US6545906B1 (en) 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
US6531723B1 (en) 2001-10-16 2003-03-11 Motorola, Inc. Magnetoresistance random access memory for improved scalability
JP2003151260A (ja) * 2001-11-13 2003-05-23 Mitsubishi Electric Corp 薄膜磁性体記憶装置
EP1321944B1 (en) * 2001-12-21 2008-07-30 Kabushiki Kaisha Toshiba Magnetic random access memory
US6693824B2 (en) * 2002-06-28 2004-02-17 Motorola, Inc. Circuit and method of writing a toggle memory
US7221582B2 (en) * 2003-08-27 2007-05-22 Hewlett-Packard Development Company, L.P. Method and system for controlling write current in magnetic memory

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1295332A (zh) * 1999-10-29 2001-05-16 惠普公司 包含数字检测放大器的mram设备
CN1349226A (zh) * 2000-10-17 2002-05-15 三菱电机株式会社 容易控制数据写入电流的薄膜磁性体存储器

Also Published As

Publication number Publication date
EP1665277A4 (en) 2008-01-09
TWI348161B (en) 2011-09-01
EP1665277A1 (en) 2006-06-07
KR20110124350A (ko) 2011-11-16
TW200527424A (en) 2005-08-16
JP4554611B2 (ja) 2010-09-29
KR101113096B1 (ko) 2012-02-17
KR20060088101A (ko) 2006-08-03
US6842365B1 (en) 2005-01-11
CN1846275A (zh) 2006-10-11
JP2007504592A (ja) 2007-03-01
WO2005027135A1 (en) 2005-03-24

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Granted publication date: 20090527

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