CN100485883C - 等离子体灰化方法 - Google Patents
等离子体灰化方法 Download PDFInfo
- Publication number
- CN100485883C CN100485883C CNB2006101514582A CN200610151458A CN100485883C CN 100485883 C CN100485883 C CN 100485883C CN B2006101514582 A CNB2006101514582 A CN B2006101514582A CN 200610151458 A CN200610151458 A CN 200610151458A CN 100485883 C CN100485883 C CN 100485883C
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- Prior art keywords
- ashing
- frequency power
- gas
- plasma
- electrode
- Prior art date
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005262713A JP4911936B2 (ja) | 2005-09-09 | 2005-09-09 | プラズマアッシング方法 |
| JP2005262713 | 2005-09-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1929096A CN1929096A (zh) | 2007-03-14 |
| CN100485883C true CN100485883C (zh) | 2009-05-06 |
Family
ID=37858992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101514582A Expired - Fee Related CN100485883C (zh) | 2005-09-09 | 2006-09-08 | 等离子体灰化方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4911936B2 (enExample) |
| CN (1) | CN100485883C (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4578507B2 (ja) | 2007-07-02 | 2010-11-10 | 東京エレクトロン株式会社 | 半導体装置の製造方法、半導体製造装置及び記憶媒体 |
| JP2010034415A (ja) | 2008-07-30 | 2010-02-12 | Hitachi High-Technologies Corp | プラズマ処理方法 |
| CN101740332B (zh) * | 2008-11-13 | 2012-04-25 | 中芯国际集成电路制造(北京)有限公司 | 一种半导体元件的蚀刻方法 |
| CN101930916B (zh) * | 2009-06-18 | 2012-11-28 | 中芯国际集成电路制造(上海)有限公司 | 形成沟槽的方法 |
| JP5544893B2 (ja) | 2010-01-20 | 2014-07-09 | 東京エレクトロン株式会社 | 基板処理方法及び記憶媒体 |
| CN102376562B (zh) * | 2010-08-24 | 2013-09-04 | 中芯国际集成电路制造(上海)有限公司 | 用于半导体工艺的灰化处理方法 |
| CN102386088B (zh) * | 2010-09-03 | 2014-06-25 | 中芯国际集成电路制造(上海)有限公司 | 用于去除半导体器件结构上的光致抗蚀剂层的方法 |
| CN102610511A (zh) * | 2012-03-21 | 2012-07-25 | 中微半导体设备(上海)有限公司 | 光刻胶的去除方法 |
| JP7357237B2 (ja) * | 2019-03-14 | 2023-10-06 | パナソニックＩｐマネジメント株式会社 | 素子チップの製造方法 |
| CN111681957B (zh) * | 2020-07-24 | 2022-03-11 | 上海华虹宏力半导体制造有限公司 | 刻蚀方法及半导体器件的制造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000195830A (ja) * | 1998-12-28 | 2000-07-14 | Mitsubishi Electric Corp | 半導体製造装置、半導体製造装置のクリ―ニング方法、半導体装置の製造方法及び半導体装置 |
| JP2001196376A (ja) * | 2000-01-14 | 2001-07-19 | Seiko Epson Corp | 半導体装置の製造方法 |
| JP2004119539A (ja) * | 2002-09-25 | 2004-04-15 | Sony Corp | レジストパターンの除去方法 |
| JP4558296B2 (ja) * | 2003-09-25 | 2010-10-06 | 東京エレクトロン株式会社 | プラズマアッシング方法 |
-
2005
- 2005-09-09 JP JP2005262713A patent/JP4911936B2/ja not_active Expired - Fee Related
-
2006
- 2006-09-08 CN CNB2006101514582A patent/CN100485883C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP4911936B2 (ja) | 2012-04-04 |
| CN1929096A (zh) | 2007-03-14 |
| JP2007080850A (ja) | 2007-03-29 |
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