CN100474085C - 薄膜晶体管阵列面板 - Google Patents
薄膜晶体管阵列面板 Download PDFInfo
- Publication number
- CN100474085C CN100474085C CNB200510132007XA CN200510132007A CN100474085C CN 100474085 C CN100474085 C CN 100474085C CN B200510132007X A CNB200510132007X A CN B200510132007XA CN 200510132007 A CN200510132007 A CN 200510132007A CN 100474085 C CN100474085 C CN 100474085C
- Authority
- CN
- China
- Prior art keywords
- film transistor
- thin
- display panel
- semiconductor island
- transistor display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 100
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000003860 storage Methods 0.000 claims description 20
- 238000002161 passivation Methods 0.000 claims description 19
- 238000002425 crystallisation Methods 0.000 claims description 16
- 230000008025 crystallization Effects 0.000 claims description 16
- 230000004888 barrier function Effects 0.000 claims description 14
- 238000009413 insulation Methods 0.000 claims description 14
- 230000000452 restraining effect Effects 0.000 claims description 14
- 125000006850 spacer group Chemical group 0.000 claims description 14
- 239000010408 film Substances 0.000 description 41
- 239000004020 conductor Substances 0.000 description 32
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 description 18
- 239000012535 impurity Substances 0.000 description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 12
- 239000013078 crystal Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 10
- 238000010276 construction Methods 0.000 description 9
- 239000011368 organic material Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 239000012774 insulation material Substances 0.000 description 4
- 229910001182 Mo alloy Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040109052 | 2004-12-20 | ||
KR1020040109052A KR20060070345A (ko) | 2004-12-20 | 2004-12-20 | 박막 트랜지스터 표시판 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1794069A CN1794069A (zh) | 2006-06-28 |
CN100474085C true CN100474085C (zh) | 2009-04-01 |
Family
ID=36594544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200510132007XA Expired - Fee Related CN100474085C (zh) | 2004-12-20 | 2005-12-16 | 薄膜晶体管阵列面板 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8106409B2 (zh) |
JP (1) | JP2006178449A (zh) |
KR (1) | KR20060070345A (zh) |
CN (1) | CN100474085C (zh) |
TW (1) | TW200637009A (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060157711A1 (en) * | 2005-01-19 | 2006-07-20 | Samsung Electronics Co., Ltd. | Thin film transistor array panel |
KR20070031620A (ko) | 2005-09-15 | 2007-03-20 | 삼성전자주식회사 | 액정 표시 장치 |
KR101358827B1 (ko) * | 2006-07-24 | 2014-02-06 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
KR101094285B1 (ko) * | 2009-12-04 | 2011-12-19 | 삼성모바일디스플레이주식회사 | 박막트랜지스터 및 이를 포함하는 표시장치 |
KR101100959B1 (ko) * | 2010-03-10 | 2011-12-29 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 표시 장치 |
KR101666661B1 (ko) * | 2010-08-26 | 2016-10-17 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 평판 표시 장치 |
KR101984309B1 (ko) * | 2010-12-20 | 2019-05-30 | 가부시키가이샤 재팬 디스프레이 | 화소 구조, 표시 장치, 및 전자 기기 |
US9224759B2 (en) | 2010-12-20 | 2015-12-29 | Japan Display Inc. | Pixel array substrate structure, method of manufacturing pixel array substrate structure, display device, and electronic apparatus |
US8830436B2 (en) * | 2010-12-24 | 2014-09-09 | Japan Display West Inc. | Pixel structure, display device, and electronic apparatus |
JP5725337B2 (ja) * | 2011-03-24 | 2015-05-27 | ソニー株式会社 | 表示装置、表示装置の製造方法および電子機器 |
KR102048941B1 (ko) | 2013-04-12 | 2020-01-09 | 삼성디스플레이 주식회사 | 가요성 기판 및 그 제조 방법, 유기 발광 표시 장치 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08201846A (ja) * | 1995-01-25 | 1996-08-09 | Matsushita Electric Ind Co Ltd | レーザーアニール法及び液晶表示装置 |
JP3317482B2 (ja) | 1996-11-26 | 2002-08-26 | シャープ株式会社 | 半導体装置及びその製造方法 |
US5981974A (en) * | 1996-09-30 | 1999-11-09 | Sharp Kabushiki Kaisha | Semiconductor device and method for fabricating the same |
KR100296109B1 (ko) * | 1998-06-09 | 2001-10-26 | 구본준, 론 위라하디락사 | 박막트랜지스터제조방법 |
KR100319206B1 (ko) * | 1998-10-20 | 2002-01-10 | 윤종용 | 박막트랜지스터 제조방법과 이에 의해 제조된 기판 및 박막트랜지스터 |
JP4398015B2 (ja) | 1999-08-09 | 2010-01-13 | シャープ株式会社 | 液晶表示装置及びその製造方法 |
JP4127466B2 (ja) | 2000-07-31 | 2008-07-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6613620B2 (en) | 2000-07-31 | 2003-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
WO2003018882A1 (en) * | 2001-08-27 | 2003-03-06 | The Trustees Of Columbia University In The City Of New York | Improved polycrystalline tft uniformity through microstructure mis-alignment |
KR100796794B1 (ko) | 2001-10-17 | 2008-01-22 | 삼성전자주식회사 | 다결정 규소 박막 트랜지스터 기판 및 그 제조 방법 |
JP4003471B2 (ja) * | 2002-02-12 | 2007-11-07 | セイコーエプソン株式会社 | 電気光学装置、電子機器、および電気光学装置の製造方法 |
JP4583004B2 (ja) | 2003-05-21 | 2010-11-17 | 株式会社 日立ディスプレイズ | アクティブ・マトリクス基板の製造方法 |
US7358165B2 (en) * | 2003-07-31 | 2008-04-15 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and method for manufacturing semiconductor device |
US20050062052A1 (en) * | 2003-09-23 | 2005-03-24 | Fu-Hsiang Yang | Panel of organic electroluminescent display |
KR100997971B1 (ko) * | 2003-11-19 | 2010-12-02 | 삼성전자주식회사 | 결정화용 마스크, 이를 이용한 결정화 방법 및 이를포함하는 박막 트랜지스터 표시판의 제조 방법 |
KR100984359B1 (ko) * | 2003-11-20 | 2010-09-30 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
KR100737535B1 (ko) * | 2003-12-29 | 2007-07-10 | 비오이 하이디스 테크놀로지 주식회사 | 다결정실리콘막 형성방법 |
KR101230299B1 (ko) * | 2005-01-07 | 2013-02-07 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 |
US20060157711A1 (en) * | 2005-01-19 | 2006-07-20 | Samsung Electronics Co., Ltd. | Thin film transistor array panel |
-
2004
- 2004-12-20 KR KR1020040109052A patent/KR20060070345A/ko not_active Application Discontinuation
-
2005
- 2005-11-23 US US11/285,935 patent/US8106409B2/en not_active Expired - Fee Related
- 2005-12-01 TW TW094142308A patent/TW200637009A/zh unknown
- 2005-12-08 JP JP2005355423A patent/JP2006178449A/ja active Pending
- 2005-12-16 CN CNB200510132007XA patent/CN100474085C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1794069A (zh) | 2006-06-28 |
TW200637009A (en) | 2006-10-16 |
KR20060070345A (ko) | 2006-06-23 |
JP2006178449A (ja) | 2006-07-06 |
US8106409B2 (en) | 2012-01-31 |
US20060131585A1 (en) | 2006-06-22 |
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