CN100472717C - 化学蒸发沉积装置喷头 - Google Patents

化学蒸发沉积装置喷头 Download PDF

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CN100472717C
CN100472717C CNB2005800272486A CN200580027248A CN100472717C CN 100472717 C CN100472717 C CN 100472717C CN B2005800272486 A CNB2005800272486 A CN B2005800272486A CN 200580027248 A CN200580027248 A CN 200580027248A CN 100472717 C CN100472717 C CN 100472717C
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shower nozzle
main aperture
chemical vapor
vapor deposition
reacting gas
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CN101031998A (zh
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严坪镕
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Eugene Technology Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
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  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

本发明提供一种化学蒸发沉积装置的喷头，它能够向半导体晶片的表面喷洒过程反应气体，以将过程反应气体在半导体晶片的表面沉积成厚度均匀的薄膜。

Description

化学蒸发沉积装置喷头
技术领域
本发明涉及一种化学蒸发沉积装置的喷头，该装置能够在半导体晶片的表面上喷洒过程反应气体(下文中称为反应气体)，以使该反应气体能够在半导体晶片的表面沉积形成厚度均匀的薄膜。
背景技术
如图1所示，它是传统的化学蒸发沉积装置1的截面图，该化学蒸发沉积装置1包括有内腔11的腔体10，以使喷头40和加热器50安装在其中；形成在一侧的进气口21，于是反应气体从外部流入；腔体顶部(chamber lead)20，其同腔体10的顶面通过紧固部件相组合以密封腔体10；片板30，其在腔体顶部20的底面提供以形成一个低温区，片板上的多个通孔31对接收到的反应气体进行分流；大量的喷孔41，用以将分流后的反应气体喷散到晶片60的表面；喷头40，沿其外部圆周形成有大量紧固孔42，以利用腔体顶部20紧固；以及加热器50，其顶面安装有晶片60，而其底面提供有加热器支架51，在内腔11内提供的加热器50按预定的距离同喷头40分离。
利用化学蒸发沉积装置1的薄膜沉积应用于在制造半导体装置和LCD基片时在晶片的表面上加工材料膜的领域，具体地说，制造有导电性的接线装置，沉积氧化膜或氮化物膜来绝缘利用化学品的传导材料膜，以及沉积用于DRAM或快速记忆装置的高介电性薄膜。薄膜沉积的目的是形成绝缘膜或接线膜，其在晶片表面沉积过程反应气体的CVD过程中具有电子特性，以便制造半导体装置或LCD基片。
如上所述，反应气体均匀地喷洒到晶片的表面，以利用化学蒸发沉积的方法沉积。在传统的化学蒸发沉积装置1的喷头中，用于喷洒反应气体的喷孔分布不紧密，所以不可能将反应气体均匀地喷洒到晶片表面。因而，薄膜不能在晶体表面均匀沉积以致损害产品质量和在紧后面的工艺中产生缺陷。因此，生产率下降。
发明内容
因此，本发明的目的在于，提供一种化学蒸发沉积装置的喷头，在喷头表面形成的喷孔分为主孔和在主孔之间的盲点处提供的副孔，以使喷洒的反应气体能够在晶片表面沉积成厚度均匀的薄膜。
为达到上述目的，这里提供了一种化学蒸发沉积装置所用的喷头，其包括：一个有内腔的腔体，以使喷头和加热器安装在其中；形成在一侧的进气口，于是反应气体从外部流入；腔体顶部，其同腔体的顶面通过紧固部件相组合以密封腔体；片板，其在腔体顶部的底面提供以形成一个低温区，片板上的多个通孔对接收到的反应气体进行分流；
大量喷孔，用以将分流后的反应气体喷散到晶片的表面上；喷头，沿其外部圆周形成有大量的紧固孔，以利用腔体顶部紧固；加热器，其顶面安装有晶片，而其底面提供有加热器支架，在内腔内提供的加热器按预定的距离同喷头分离，其中，在喷头的顶面中心形成大量的主孔，彼此之间等距分离；大量的副孔同主孔等距分离以同主孔交叉，且所述主孔的喷射角度大于所述副孔的喷射角度；在喷头的底面中心形成凸起；在凸起之间提供有导槽，以形成主孔和副孔的下部；导槽的外部圆周向下部伸展。
附图说明
图1为传统化学蒸发沉积装置的截面图；
图2为内装有根据本发明的喷头的化学蒸发沉积装置的截面图；
图3为根据本发明的喷头的截面图；
图4为图3的俯视图；
图5为根据本发明另一实施例的喷头的截面图；
图6为根据本发明又一实施例的喷头的俯视图。
具体实施方式
下文中，将参照附图描述本发明的优选实施例。
图2是根据本发明的化学蒸发沉积装置1的截面图。为在晶片60的表面上沉积薄膜，反应气体从腔体顶部20的进气口21流入，接收到的反应气体到达片板30，片板30是在腔体顶部20的底面形成的一个低温区。此时，反应气体首先通过片板30上的大量通孔31分流，接着分流的反应气体流入喷头400的主孔411和副孔412，喷头400紧固于腔体顶部20且具有同片板30相对应的插槽420。接收的反应气体通过在喷头400的底面中心形成的凸起430和凸起430之间提供的导槽440均匀喷洒。与此同时，喷孔410被分为主孔411和副孔412，且主孔411的喷射角度θ1大于副孔412的喷射角度θ2，因此主孔411的下端的直径d1大于副孔412下端的直径d2，使反应气体均匀而正确地沉积于晶片60的表面，以除去反应气体无法达到的盲点。凸起430形成在喷头400的底面上，导槽440形成在凸起430之间，使流自喷孔410的反应气体不会在外部聚集。特别的，导槽440向下部伸展，所以反应气体能够在形成于加热器50顶面上的晶片60的表面有效地喷洒并沉积。
如图3的截面图和图4的俯视图所示，喷头400包括一个预设的插槽420，片板30从顶面朝向喷头400内部地插入其中；形成在插槽420表面上的大量主孔411，彼此之间以等距间隔；同主孔411等距分离并同主孔411交叉的大量副孔412；以及大量的紧固孔42，使螺钉B将喷头400紧固在腔体顶部20上。图5是根据本发明另一实施例的喷头截面图。从上至下形成的主孔411和副孔412的下部予以伸展形成伸展部450，以快速广泛地喷洒反应气体。图6是根据本发明又一实施例的喷头俯视图。喷头的形状变化了，但是，在凸起430之间形成的喷孔410和导槽440是一样的。
按照本发明的喷头，主孔和副孔去除了盲点，所以可均匀地喷洒反应气体并在半导体晶片的表面沉积厚度均匀的薄膜。因此，可提高生产率。
按照用于在晶片表面沉积反应气体的化学蒸发沉积装置的喷头，增加副孔以去除喷孔内的盲点，并形成导槽以防止反应气体聚集，因此可在晶片表面均匀和稳定地沉积薄膜。

Claims (3)

1.一种化学蒸发沉积装置的喷头，包括：一个有内腔的腔体，以使喷头和加热器安装在其中；形成在一侧的进气口，于是反应气体从外部流入；腔体顶部，其同腔体的顶面通过紧固部件相组合以密封腔体；片板，其在腔体顶部的底面提供以形成一个低温区，片板上的多个通孔对接收到的反应气体进行分流；
大量喷孔，用以将分流后的反应气体喷散到晶片的表面上；喷头，沿其外部圆周形成有大量的紧固孔，以利用腔体顶部紧固；加热器，其顶面安装有晶片，而其底面提供有加热器支架，在内腔内提供的加热器按预定的距离同喷头分离，其中，在喷头的顶面中心形成大量的主孔，彼此之间等距分离；大量的副孔同主孔等距分离以同主孔交叉，且所述主孔的喷射角度大于所述副孔的喷射角度；在喷头的底面中心形成凸起；在凸起之间提供有导槽，以形成主孔和副孔的下部；导槽的外部圆周向下部伸展。
2.如权利要求1所述的化学蒸发沉积装置的喷头，其特征在于，所述从上至下形成的主孔和副孔的下部予以伸展形成伸展部。
3.如权利要求1所述的化学蒸发沉积装置的喷头，其特征在于，所述主孔的下端的直径大于所述副孔下端的直径。
CNB2005800272486A 2004-08-11 2005-08-09 化学蒸发沉积装置喷头 Expired - Fee Related CN100472717C (zh)

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KR20060014495A (ko) 2006-02-16
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CN101031998A (zh) 2007-09-05

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