CN100452435C - 平面超薄绝缘体上半导体沟道mosfet及其制造方法 - Google Patents
平面超薄绝缘体上半导体沟道mosfet及其制造方法 Download PDFInfo
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- CN100452435C CN100452435C CNB2006101159114A CN200610115911A CN100452435C CN 100452435 C CN100452435 C CN 100452435C CN B2006101159114 A CNB2006101159114 A CN B2006101159114A CN 200610115911 A CN200610115911 A CN 200610115911A CN 100452435 C CN100452435 C CN 100452435C
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
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- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Abstract
Description
Claims (30)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US11/162,959 | 2005-09-29 | ||
US11/162,959 US20070069300A1 (en) | 2005-09-29 | 2005-09-29 | Planar ultra-thin semiconductor-on-insulator channel mosfet with embedded source/drain |
Publications (2)
Publication Number | Publication Date |
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CN1941412A CN1941412A (zh) | 2007-04-04 |
CN100452435C true CN100452435C (zh) | 2009-01-14 |
Family
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Family Applications (1)
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CNB2006101159114A Expired - Fee Related CN100452435C (zh) | 2005-09-29 | 2006-08-17 | 平面超薄绝缘体上半导体沟道mosfet及其制造方法 |
Country Status (3)
Country | Link |
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US (1) | US20070069300A1 (zh) |
CN (1) | CN100452435C (zh) |
TW (1) | TW200717806A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103582930A (zh) * | 2011-04-14 | 2014-02-12 | 国际商业机器公司 | 具有凹陷沟道膜和突变结的mosfet |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100752182B1 (ko) * | 2005-10-12 | 2007-08-24 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
US7365399B2 (en) * | 2006-01-17 | 2008-04-29 | International Business Machines Corporation | Structure and method to form semiconductor-on-pores (SOP) for high device performance and low manufacturing cost |
US7569434B2 (en) * | 2006-01-19 | 2009-08-04 | International Business Machines Corporation | PFETs and methods of manufacturing the same |
US7821066B2 (en) * | 2006-12-08 | 2010-10-26 | Michael Lebby | Multilayered BOX in FDSOI MOSFETS |
US7790559B2 (en) * | 2008-02-27 | 2010-09-07 | International Business Machines Corporation | Semiconductor transistors having high-K gate dielectric layers and metal gate electrodes |
CN102648523A (zh) | 2009-12-01 | 2012-08-22 | 拉姆伯斯公司 | 具有纹理化沟道和栅极的平面型mosfet |
US9368599B2 (en) * | 2010-06-22 | 2016-06-14 | International Business Machines Corporation | Graphene/nanostructure FET with self-aligned contact and gate |
CN102386135A (zh) * | 2010-09-03 | 2012-03-21 | 中芯国际集成电路制造(上海)有限公司 | 形成具有金属栅极的半导体器件的方法 |
US8685847B2 (en) * | 2010-10-27 | 2014-04-01 | International Business Machines Corporation | Semiconductor device having localized extremely thin silicon on insulator channel region |
KR101718794B1 (ko) * | 2010-12-16 | 2017-03-23 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
US9064742B2 (en) * | 2011-03-29 | 2015-06-23 | Renesas Electronics Corporation | Semiconductor device and manufacturing method thereof |
CN102208448B (zh) * | 2011-05-24 | 2013-04-24 | 西安电子科技大学 | 多晶Si1-xGex/金属并列覆盖双栅SSGOI nMOSFET器件结构 |
FR2991504A1 (fr) * | 2012-05-30 | 2013-12-06 | St Microelectronics Tours Sas | Composant de puissance vertical haute tension |
FR3011124A1 (fr) * | 2013-09-26 | 2015-03-27 | St Microelectronics Tours Sas | Composant scr a caracteristiques stables en temperature |
US9601624B2 (en) * | 2014-12-30 | 2017-03-21 | Globalfoundries Inc | SOI based FINFET with strained source-drain regions |
CN106328534B (zh) * | 2015-07-02 | 2019-08-27 | 中芯国际集成电路制造(上海)有限公司 | Mos晶体管及其形成方法 |
US10249529B2 (en) * | 2015-12-15 | 2019-04-02 | International Business Machines Corporation | Channel silicon germanium formation method |
US11011411B2 (en) | 2019-03-22 | 2021-05-18 | International Business Machines Corporation | Semiconductor wafer having integrated circuits with bottom local interconnects |
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US5956580A (en) * | 1998-03-13 | 1999-09-21 | Texas Instruments--Acer Incorporated | Method to form ultra-short channel elevated S/D MOSFETS on an ultra-thin SOI substrate |
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- 2005-09-29 US US11/162,959 patent/US20070069300A1/en not_active Abandoned
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2006
- 2006-08-17 CN CNB2006101159114A patent/CN100452435C/zh not_active Expired - Fee Related
- 2006-09-15 TW TW095134240A patent/TW200717806A/zh unknown
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US6429091B1 (en) * | 2000-12-08 | 2002-08-06 | International Business Machines Corporation | Patterned buried insulator |
US6506649B2 (en) * | 2001-03-19 | 2003-01-14 | International Business Machines Corporation | Method for forming notch gate having self-aligned raised source/drain structure |
US6670278B2 (en) * | 2001-03-30 | 2003-12-30 | Lam Research Corporation | Method of plasma etching of silicon carbide |
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CN103582930A (zh) * | 2011-04-14 | 2014-02-12 | 国际商业机器公司 | 具有凹陷沟道膜和突变结的mosfet |
CN103582930B (zh) * | 2011-04-14 | 2016-10-26 | 国际商业机器公司 | 具有凹陷沟道膜和突变结的mosfet |
Also Published As
Publication number | Publication date |
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TW200717806A (en) | 2007-05-01 |
CN1941412A (zh) | 2007-04-04 |
US20070069300A1 (en) | 2007-03-29 |
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