CN100468776C - 具有介质应力产生区的晶体管及其制造方法 - Google Patents
具有介质应力产生区的晶体管及其制造方法 Download PDFInfo
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- CN100468776C CN100468776C CNB2006101538017A CN200610153801A CN100468776C CN 100468776 C CN100468776 C CN 100468776C CN B2006101538017 A CNB2006101538017 A CN B2006101538017A CN 200610153801 A CN200610153801 A CN 200610153801A CN 100468776 C CN100468776 C CN 100468776C
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- 239000004065 semiconductor Substances 0.000 claims abstract description 101
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- 238000000034 method Methods 0.000 claims description 33
- 125000006850 spacer group Chemical group 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
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- 230000015572 biosynthetic process Effects 0.000 claims description 6
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
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- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
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- 150000002500 ions Chemical class 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/263—Bombardment with radiation with high-energy radiation
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
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- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
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- High Energy & Nuclear Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Toxicology (AREA)
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- Spectroscopy & Molecular Physics (AREA)
- Element Separation (AREA)
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Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/164,632 | 2005-11-30 | ||
US11/164,632 US7659581B2 (en) | 2005-11-30 | 2005-11-30 | Transistor with dielectric stressor element fully underlying the active semiconductor region |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1976060A CN1976060A (zh) | 2007-06-06 |
CN100468776C true CN100468776C (zh) | 2009-03-11 |
Family
ID=38088045
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101538017A Expired - Fee Related CN100468776C (zh) | 2005-11-30 | 2006-09-12 | 具有介质应力产生区的晶体管及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7659581B2 (zh) |
JP (1) | JP5137384B2 (zh) |
CN (1) | CN100468776C (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7718231B2 (en) * | 2003-09-30 | 2010-05-18 | International Business Machines Corporation | Thin buried oxides by low-dose oxygen implantation into modified silicon |
US7566482B2 (en) * | 2003-09-30 | 2009-07-28 | International Business Machines Corporation | SOI by oxidation of porous silicon |
US7465642B2 (en) * | 2005-10-28 | 2008-12-16 | International Business Machines Corporation | Methods for forming semiconductor structures with buried isolation collars |
JP4892416B2 (ja) | 2007-06-15 | 2012-03-07 | 株式会社シマノ | スピニングリールのリール本体 |
US8138523B2 (en) * | 2009-10-08 | 2012-03-20 | International Business Machines Corporation | Semiconductor device having silicon on stressed liner (SOL) |
US8647935B2 (en) | 2010-12-17 | 2014-02-11 | International Business Machines Corporation | Buried oxidation for enhanced mobility |
US9184138B2 (en) * | 2011-12-29 | 2015-11-10 | Stmicroelectronics (Grenoble 2) Sas | Semiconductor integrated device with mechanically decoupled active area and related manufacturing process |
US9183977B2 (en) * | 2012-04-20 | 2015-11-10 | Infineon Technologies Ag | Method for fabricating a coil by way of a rounded trench |
IT201800000928A1 (it) * | 2018-01-15 | 2019-07-15 | St Microelectronics Srl | Dispositivo elettronico a semiconduttore con porta a trincea e relativo metodo di fabbricazione |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2821483B1 (fr) * | 2001-02-28 | 2004-07-09 | St Microelectronics Sa | Procede de fabrication d'un transistor a grille isolee et a architecture du type substrat sur isolant, et transistor correspondant |
US6717216B1 (en) | 2002-12-12 | 2004-04-06 | International Business Machines Corporation | SOI based field effect transistor having a compressive film in undercut area under the channel and a method of making the device |
US6974981B2 (en) | 2002-12-12 | 2005-12-13 | International Business Machines Corporation | Isolation structures for imposing stress patterns |
JP3856447B2 (ja) * | 2003-03-14 | 2006-12-13 | 株式会社東芝 | 電界効果トランジスタ及びその製造方法 |
JP4105044B2 (ja) * | 2003-06-13 | 2008-06-18 | 株式会社東芝 | 電界効果トランジスタ |
US7566482B2 (en) | 2003-09-30 | 2009-07-28 | International Business Machines Corporation | SOI by oxidation of porous silicon |
JP2005210062A (ja) * | 2003-12-26 | 2005-08-04 | Canon Inc | 半導体部材とその製造方法、及び半導体装置 |
US7087965B2 (en) * | 2004-04-22 | 2006-08-08 | International Business Machines Corporation | Strained silicon CMOS on hybrid crystal orientations |
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2005
- 2005-11-30 US US11/164,632 patent/US7659581B2/en not_active Expired - Fee Related
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2006
- 2006-09-12 CN CNB2006101538017A patent/CN100468776C/zh not_active Expired - Fee Related
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JP2007158323A (ja) | 2007-06-21 |
US20070122956A1 (en) | 2007-05-31 |
US7659581B2 (en) | 2010-02-09 |
CN1976060A (zh) | 2007-06-06 |
JP5137384B2 (ja) | 2013-02-06 |
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