CN100450647C - 辉光放电产生的化学气相沉积 - Google Patents

辉光放电产生的化学气相沉积 Download PDF

Info

Publication number
CN100450647C
CN100450647C CNB2004800250618A CN200480025061A CN100450647C CN 100450647 C CN100450647 C CN 100450647C CN B2004800250618 A CNB2004800250618 A CN B2004800250618A CN 200480025061 A CN200480025061 A CN 200480025061A CN 100450647 C CN100450647 C CN 100450647C
Authority
CN
China
Prior art keywords
electrode
gas
glow discharge
original silica
base material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004800250618A
Other languages
English (en)
Chinese (zh)
Other versions
CN1845797A (zh
Inventor
A·M·加贝尔尼克
C·兰伯特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Global Technologies LLC
Original Assignee
Dow Global Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Global Technologies LLC filed Critical Dow Global Technologies LLC
Publication of CN1845797A publication Critical patent/CN1845797A/zh
Application granted granted Critical
Publication of CN100450647C publication Critical patent/CN100450647C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/4697—Generating plasma using glow discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Silicon Compounds (AREA)
  • Laminated Bodies (AREA)
CNB2004800250618A 2003-09-09 2004-09-07 辉光放电产生的化学气相沉积 Expired - Fee Related CN100450647C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US50147703P 2003-09-09 2003-09-09
US60/501,477 2003-09-09

Publications (2)

Publication Number Publication Date
CN1845797A CN1845797A (zh) 2006-10-11
CN100450647C true CN100450647C (zh) 2009-01-14

Family

ID=34619293

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004800250618A Expired - Fee Related CN100450647C (zh) 2003-09-09 2004-09-07 辉光放电产生的化学气相沉积

Country Status (9)

Country Link
US (1) US20060222779A1 (enExample)
EP (1) EP1663518A2 (enExample)
JP (1) JP2007505219A (enExample)
KR (1) KR20060082858A (enExample)
CN (1) CN100450647C (enExample)
BR (1) BRPI0413769A (enExample)
CA (1) CA2537075A1 (enExample)
MX (1) MXPA06002679A (enExample)
WO (1) WO2005049228A2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1807548A2 (en) * 2004-10-29 2007-07-18 Dow Gloval Technologies Inc. Abrasion resistant coatings by plasma enhanced chemical vapor deposition
EP2024533A1 (en) 2006-05-30 2009-02-18 Fuji Film Manufacturing Europe B.V. Method and apparatus for deposition using pulsed atmospheric pressure glow discharge
WO2008100139A1 (en) 2007-02-13 2008-08-21 Fujifilm Manufacturing Europe B.V. Substrate plasma treatment using magnetic mask device
US20100129646A1 (en) * 2007-05-21 2010-05-27 Fisk Thomas E Coated object
CN101772588A (zh) * 2007-07-30 2010-07-07 陶氏环球技术公司 大气压等离子体增强化学气相沉积方法
US20100255216A1 (en) * 2007-11-29 2010-10-07 Haley Jr Robert P Process and apparatus for atmospheric pressure plasma enhanced chemical vapor deposition coating of a substrate
US8702999B2 (en) 2008-02-01 2014-04-22 Fujifilm Manufacturing Europe B.V. Method and apparatus for plasma surface treatment of a moving substrate
US8445897B2 (en) 2008-02-08 2013-05-21 Fujifilm Manufacturing Europe B.V. Method for manufacturing a multi-layer stack structure with improved WVTR barrier property
EP2245647B1 (en) 2008-02-21 2012-08-01 Fujifilm Manufacturing Europe B.V. Method for treatment of a substrate with atmospheric pressure glow discharge electrode configuration
US8609203B2 (en) * 2008-06-06 2013-12-17 Fujifilm Manufacturing Europe B.V. Method and apparatus for plasma surface treatment of moving substrate
DE102009006484A1 (de) * 2009-01-28 2010-07-29 Ahlbrandt System Gmbh Vorrichtung zum Modifizieren der Oberflächen von Bahn-, Platten- und Bogenware mit einer Einrichtung zur Erzeugung eines Plasmas
JP2012517529A (ja) 2009-02-12 2012-08-02 フジフィルム・マニュファクチュアリング・ヨーロッパ・ベスローテン・フエンノートシャップ ポリマー基材上の２層バリヤー
CN111085411B (zh) * 2020-01-07 2022-05-13 大连交通大学 一种高绝缘电阻二氧化硅薄膜材料及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0617142A1 (en) * 1993-03-26 1994-09-28 Shin-Etsu Chemical Co., Ltd. Preparation of silica thin films
WO2000070117A1 (en) * 1999-05-14 2000-11-23 The Regents Of The University Of California Low-temperature compatible wide-pressure-range plasma flow device
CN1320062A (zh) * 1998-07-24 2001-10-31 英国国防部 表面涂层
WO2003066932A1 (en) * 2002-02-05 2003-08-14 Dow Global Technologies Inc. Corona-generated chemical vapor deposition on a substrate

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2990608B2 (ja) * 1989-12-13 1999-12-13 株式会社ブリヂストン 表面処理方法
US5344462A (en) * 1992-04-06 1994-09-06 Plasma Plus Gas plasma treatment for modification of surface wetting properties
FR2704558B1 (fr) * 1993-04-29 1995-06-23 Air Liquide Procede et dispositif pour creer un depot d'oxyde de silicium sur un substrat solide en defilement.
US5372876A (en) * 1993-06-02 1994-12-13 Appleton Mills Papermaking felt with hydrophobic layer
US6106659A (en) * 1997-07-14 2000-08-22 The University Of Tennessee Research Corporation Treater systems and methods for generating moderate-to-high-pressure plasma discharges for treating materials and related treated materials
US6118218A (en) * 1999-02-01 2000-09-12 Sigma Technologies International, Inc. Steady-state glow-discharge plasma at atmospheric pressure
EP1311620A2 (en) * 2000-07-24 2003-05-21 Dow Global Technologies Inc. Thermoplastic superabsorbent polymer blend compositions and their preparation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0617142A1 (en) * 1993-03-26 1994-09-28 Shin-Etsu Chemical Co., Ltd. Preparation of silica thin films
CN1320062A (zh) * 1998-07-24 2001-10-31 英国国防部 表面涂层
WO2000070117A1 (en) * 1999-05-14 2000-11-23 The Regents Of The University Of California Low-temperature compatible wide-pressure-range plasma flow device
WO2003066932A1 (en) * 2002-02-05 2003-08-14 Dow Global Technologies Inc. Corona-generated chemical vapor deposition on a substrate

Also Published As

Publication number Publication date
JP2007505219A (ja) 2007-03-08
BRPI0413769A (pt) 2006-10-31
WO2005049228A3 (en) 2005-08-18
US20060222779A1 (en) 2006-10-05
MXPA06002679A (es) 2006-06-05
KR20060082858A (ko) 2006-07-19
WO2005049228A2 (en) 2005-06-02
CN1845797A (zh) 2006-10-11
CA2537075A1 (en) 2005-06-02
EP1663518A2 (en) 2006-06-07

Similar Documents

Publication Publication Date Title
CN100450647C (zh) 辉光放电产生的化学气相沉积
CN100432289C (zh) 在基底上进行电晕致化学气相沉积
US11845216B2 (en) 3D printed electronics using directional plasma jet
Yabu et al. Single-step fabrication of transparent superhydrophobic porous polymer films
Subrahmanya et al. High performance self-heated membrane distillation system for energy efficient desalination process
KR100937789B1 (ko) 층형성 방법, 및 이 방법에 의해 형성되는 층을 갖는 기재
Belmonte et al. Nonequilibrium atmospheric plasma deposition
KR20060037241A (ko) 박막 제조 방법 및 이 방법에 의해 형성된 박막을 갖는기재
CA2582286A1 (en) Abrasion resistant coatings by plasma enhanced chemical vapor deposition
WO2006049865A1 (en) Improved deposition rate plasma enhanced chemical vapor process
CN104810495B (zh) 一种耐热收缩的动力电池隔膜的制备方法
JP2000212753A (ja) 表面処理品の製造方法
EP2546636B1 (en) Method for forming gas sensing layers
JP2006110653A (ja) 無機酸化物周期構造体
JP2010247446A (ja) 多孔質シートの製造方法及び多孔質シート
JP4349052B2 (ja) ディスプレイ用フレネルレンズの製造方法
JP4244576B2 (ja) 薄膜製膜装置
WO2007043569A1 (ja) 透明導電性膜およびその製造方法
JP4244573B2 (ja) 薄膜製膜装置
JP2023044167A (ja) 電池の電極形成方法、膜電極アッセンブリーの製造方法、膜電極アッセンブリー、燃料電池または水電解水素発生装置
WO2021111947A1 (ja) 粉粒体の塗布または成膜方法
US20090291224A1 (en) Porous Ceramic Thin Film
TWI585226B (zh) 真空蒸鍍用蒸發源，真空蒸鍍裝置及方法
KR100684275B1 (ko) 정전분무 화염증착법을 이용한 박막 제조장치
JP4244575B2 (ja) 薄膜製膜装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090114

Termination date: 20090907