CN100438036C - 存储器件及其制造方法 - Google Patents

存储器件及其制造方法 Download PDF

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Publication number
CN100438036C
CN100438036C CNB2005100644419A CN200510064441A CN100438036C CN 100438036 C CN100438036 C CN 100438036C CN B2005100644419 A CNB2005100644419 A CN B2005100644419A CN 200510064441 A CN200510064441 A CN 200510064441A CN 100438036 C CN100438036 C CN 100438036C
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CN
China
Prior art keywords
contact
memory device
insulating barrier
groove
knot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2005100644419A
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English (en)
Chinese (zh)
Other versions
CN1728387A (zh
Inventor
张世亿
郑台愚
金瑞玟
金愚镇
朴滢淳
金荣福
梁洪善
孙贤哲
黄应林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hynix Semiconductor Inc
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Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of CN1728387A publication Critical patent/CN1728387A/zh
Application granted granted Critical
Publication of CN100438036C publication Critical patent/CN100438036C/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CNB2005100644419A 2004-07-27 2005-04-15 存储器件及其制造方法 Expired - Fee Related CN100438036C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020040058871 2004-07-27
KR1020040058871A KR100623591B1 (ko) 2004-07-27 2004-07-27 메모리소자 및 그의 제조 방법
KR1020040059670 2004-07-29

Publications (2)

Publication Number Publication Date
CN1728387A CN1728387A (zh) 2006-02-01
CN100438036C true CN100438036C (zh) 2008-11-26

Family

ID=35927527

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005100644419A Expired - Fee Related CN100438036C (zh) 2004-07-27 2005-04-15 存储器件及其制造方法

Country Status (2)

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KR (1) KR100623591B1 (ko)
CN (1) CN100438036C (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100905776B1 (ko) 2006-08-25 2009-07-02 주식회사 하이닉스반도체 반도체 소자의 제조방법
KR100815190B1 (ko) * 2007-03-29 2008-03-19 주식회사 하이닉스반도체 반도체 소자 및 그 제조 방법
KR100905830B1 (ko) * 2007-11-16 2009-07-02 주식회사 하이닉스반도체 반도체 소자 및 그의 제조 방법
CN106910745B (zh) * 2017-03-07 2018-03-06 睿力集成电路有限公司 存储器及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5040036A (en) * 1988-02-05 1991-08-13 Emanuel Hazani Trench-isolated self-aligned split-gate EEPROM transistor and memory array
US6048767A (en) * 1991-08-22 2000-04-11 Nec Corporation Method of forming a semiconductor memory device
US6228700B1 (en) * 1999-09-03 2001-05-08 United Microelectronics Corp. Method for manufacturing dynamic random access memory

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100307531B1 (ko) * 1999-08-09 2001-11-01 김영환 모스페트 소자와 이를 이용한 메모리셀 및 그 제조 방법
DE19954867C1 (de) 1999-11-15 2000-12-07 Infineon Technologies Ag DRAM-Zellenanordnung und Verfahren zu deren Herstellung

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5040036A (en) * 1988-02-05 1991-08-13 Emanuel Hazani Trench-isolated self-aligned split-gate EEPROM transistor and memory array
US6048767A (en) * 1991-08-22 2000-04-11 Nec Corporation Method of forming a semiconductor memory device
US6228700B1 (en) * 1999-09-03 2001-05-08 United Microelectronics Corp. Method for manufacturing dynamic random access memory

Also Published As

Publication number Publication date
CN1728387A (zh) 2006-02-01
KR20060010243A (ko) 2006-02-02
KR100623591B1 (ko) 2006-09-19

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Granted publication date: 20081126

Termination date: 20160415

CF01 Termination of patent right due to non-payment of annual fee