CN100435355C - 栅电极及其制造方法 - Google Patents

栅电极及其制造方法 Download PDF

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Publication number
CN100435355C
CN100435355C CNB03819984XA CN03819984A CN100435355C CN 100435355 C CN100435355 C CN 100435355C CN B03819984X A CNB03819984X A CN B03819984XA CN 03819984 A CN03819984 A CN 03819984A CN 100435355 C CN100435355 C CN 100435355C
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CN
China
Prior art keywords
gate electrode
opening
aforementioned
electron beam
manufacture method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB03819984XA
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English (en)
Chinese (zh)
Other versions
CN1679173A (zh
Inventor
牧山刚三
野崎耕司
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Fujitsu Ltd
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Fujitsu Ltd
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Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of CN1679173A publication Critical patent/CN1679173A/zh
Application granted granted Critical
Publication of CN100435355C publication Critical patent/CN100435355C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CNB03819984XA 2002-08-28 2003-08-04 栅电极及其制造方法 Expired - Lifetime CN100435355C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002249390A JP4763218B2 (ja) 2002-08-28 2002-08-28 ゲート電極の製造方法
JP249390/2002 2002-08-28

Publications (2)

Publication Number Publication Date
CN1679173A CN1679173A (zh) 2005-10-05
CN100435355C true CN100435355C (zh) 2008-11-19

Family

ID=31972574

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB03819984XA Expired - Lifetime CN100435355C (zh) 2002-08-28 2003-08-04 栅电极及其制造方法

Country Status (5)

Country Link
JP (1) JP4763218B2 (ko)
KR (1) KR100663151B1 (ko)
CN (1) CN100435355C (ko)
TW (1) TWI243431B (ko)
WO (1) WO2004021450A1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4718145B2 (ja) 2004-08-31 2011-07-06 富士通株式会社 半導体装置及びゲート電極の製造方法
JP2014507795A (ja) * 2010-12-27 2014-03-27 ブルーワー サイエンス アイ エヌ シー． 高度なパターン形成に必要な小型フィーチャのパターン形成プロセス
WO2020003420A1 (ja) * 2018-06-27 2020-01-02 三菱電機株式会社 半導体装置の製造方法
JP7484479B2 (ja) 2020-06-19 2024-05-16 住友電気工業株式会社 半導体装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07193088A (ja) * 1993-12-27 1995-07-28 Nec Corp 電界効果トランジスタの製造方法
JPH10107044A (ja) * 1996-09-30 1998-04-24 Nec Corp 電界効果トランジスタの製造方法
JPH11352692A (ja) * 1998-06-04 1999-12-24 Nippon Zeon Co Ltd レジスト組成物
JP2001189283A (ja) * 2000-01-05 2001-07-10 Matsushita Electronics Industry Corp 半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61284969A (ja) * 1985-06-10 1986-12-15 Nippon Telegr & Teleph Corp <Ntt> 電界効果型トランジスタの製法
JP3340493B2 (ja) * 1993-02-26 2002-11-05 沖電気工業株式会社 パターン形成方法、位相シフト法用ホトマスクの形成方法
JP3924910B2 (ja) * 1998-03-31 2007-06-06 三菱電機株式会社 半導体装置の製造方法
JP3332851B2 (ja) * 1998-04-22 2002-10-07 松下電器産業株式会社 半導体装置の製造方法
JP2001109165A (ja) * 1999-10-05 2001-04-20 Clariant (Japan) Kk パターン形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07193088A (ja) * 1993-12-27 1995-07-28 Nec Corp 電界効果トランジスタの製造方法
JPH10107044A (ja) * 1996-09-30 1998-04-24 Nec Corp 電界効果トランジスタの製造方法
JPH11352692A (ja) * 1998-06-04 1999-12-24 Nippon Zeon Co Ltd レジスト組成物
JP2001189283A (ja) * 2000-01-05 2001-07-10 Matsushita Electronics Industry Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JP2004087967A (ja) 2004-03-18
TW200406036A (en) 2004-04-16
WO2004021450A1 (ja) 2004-03-11
JP4763218B2 (ja) 2011-08-31
KR20050033656A (ko) 2005-04-12
CN1679173A (zh) 2005-10-05
KR100663151B1 (ko) 2007-01-02
TWI243431B (en) 2005-11-11

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Granted publication date: 20081119