CN100426537C - 发光二极管及其制造方法 - Google Patents
发光二极管及其制造方法 Download PDFInfo
- Publication number
- CN100426537C CN100426537C CNB2004800097637A CN200480009763A CN100426537C CN 100426537 C CN100426537 C CN 100426537C CN B2004800097637 A CNB2004800097637 A CN B2004800097637A CN 200480009763 A CN200480009763 A CN 200480009763A CN 100426537 C CN100426537 C CN 100426537C
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- Prior art keywords
- semiconductor layer
- compound semiconductor
- light
- electrode
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000000034 method Methods 0.000 claims abstract description 54
- 239000011521 glass Substances 0.000 claims abstract description 44
- 239000003513 alkali Substances 0.000 claims abstract description 33
- 239000011575 calcium Substances 0.000 claims abstract description 6
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- 229910052788 barium Inorganic materials 0.000 claims abstract description 5
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 5
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 5
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims abstract description 4
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- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims abstract description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
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- 238000003466 welding Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
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- 229910052810 boron oxide Inorganic materials 0.000 claims description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
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- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 2
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000952 Be alloy Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000002146 bilateral effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
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- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- CSSYLTMKCUORDA-UHFFFAOYSA-N barium(2+);oxygen(2-) Chemical compound [O-2].[Ba+2] CSSYLTMKCUORDA-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000003339 best practice Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
接合方法 | 接合温度(℃) | 施加电压(V) | 压力(kg/cm<sup>3</sup>) | 热膨胀系数(10<sup>-6</sup>/K) | 表面粗糙度(nm) | 接合 | 分离 | 亮度 | |
实例1 | 阳极 | 400 | 800 | 0 | 5 | 0.5 | ○ | ○ | 180 |
实例2 | 阳极 | 400 | 800 | 2 | 4 | 0.5 | ○ | ○ | 170 |
比较实例1 | 压缩 | 400 | 0 | 2 | 5 | 0.5 | × | - | - |
比较实例2 | 压缩 | 500 | 0 | 2 | 5 | 0.5 | × | - | - |
比较实例3 | 压缩 | 600 | 0 | 3 | 5 | 0.5 | × | - | - |
比较实例4 | 阳极 | 400 | 800 | 2 | 8 | 0.5 | 断裂 | - | - |
比较实例5 | 阳极 | 400 | 800 | 2 | 2 | 0.5 | 断裂 | - | - |
比较实例6 | 阳极 | 400 | 800 | 2 | 4 | 2 | ○ | × | - |
比较实例7 | 无 | - | - | - | - | - | - | - | 60 |
Claims (15)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003067428 | 2003-03-13 | ||
JP067428/2003 | 2003-03-13 | ||
JP2003408246 | 2003-12-05 | ||
JP408246/2003 | 2003-12-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1774820A CN1774820A (zh) | 2006-05-17 |
CN100426537C true CN100426537C (zh) | 2008-10-15 |
Family
ID=36086373
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800097637A Expired - Fee Related CN100426537C (zh) | 2003-03-13 | 2004-03-09 | 发光二极管及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20060237741A1 (zh) |
KR (1) | KR100681789B1 (zh) |
CN (1) | CN100426537C (zh) |
TW (1) | TWI231054B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107658373A (zh) * | 2012-03-28 | 2018-02-02 | 晶元光电股份有限公司 | 发光二极管结构与其制造方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI294699B (en) | 2006-01-27 | 2008-03-11 | Epistar Corp | Light emitting device and method of forming the same |
JP4176703B2 (ja) * | 2004-11-25 | 2008-11-05 | 松下電器産業株式会社 | 半導体発光装置、照明装置、携帯通信機器、カメラ、及び製造方法 |
KR100762000B1 (ko) * | 2006-01-02 | 2007-09-28 | 삼성전기주식회사 | 고휘도 질화물계 반도체 발광소자 |
JP4974867B2 (ja) * | 2007-12-12 | 2012-07-11 | 昭和電工株式会社 | 発光ダイオード及びその製造方法 |
DE102008008599A1 (de) * | 2007-12-20 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Halbleiteranordnung, insbesondere Leuchtdiodenanordnung und Leuchtmittelanordnung |
US20100001312A1 (en) | 2008-07-01 | 2010-01-07 | Epistar Corporation | Light-emitting device and method for manufacturing the same |
CN101635324B (zh) * | 2008-07-24 | 2015-08-26 | 晶元光电股份有限公司 | 发光元件及其制造方法 |
KR102082499B1 (ko) | 2011-08-26 | 2020-02-27 | 루미리즈 홀딩 비.브이. | 반도체 구조를 프로세싱하는 방법 |
US11069678B2 (en) * | 2017-08-29 | 2021-07-20 | Qorvo Us, Inc. | Logic gate cell structure |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0616376A1 (en) * | 1993-03-19 | 1994-09-21 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
JPH0722176A (ja) * | 1993-06-29 | 1995-01-24 | Fuji Electric Co Ltd | 薄膜発光素子 |
JP2000173747A (ja) * | 1998-11-30 | 2000-06-23 | Kyocera Corp | 押圧加熱型セラミックヒータ |
JP2002084029A (ja) * | 2000-09-11 | 2002-03-22 | Canon Inc | ヒートパイプを備えた半導体光素子 |
US20020053872A1 (en) * | 2000-11-07 | 2002-05-09 | Kuang-Neng Yang | Light emitting diode and method of making the same |
JP2002261294A (ja) * | 2001-02-28 | 2002-09-13 | Japan Science & Technology Corp | 透明酸化物p−n接合ダイオード |
JP2002289969A (ja) * | 2001-03-27 | 2002-10-04 | Ricoh Co Ltd | 面発光レーザ素子およびその作製方法および面発光レーザアレイおよび波長多重伝送システム |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3091903B2 (ja) * | 1994-08-17 | 2000-09-25 | セイコーインスツルメンツ株式会社 | アバランシェ・フォト・ダイオード及びその製造方法 |
JPH11195487A (ja) * | 1997-12-27 | 1999-07-21 | Tdk Corp | 有機el素子 |
WO2002007171A1 (fr) * | 2000-07-19 | 2002-01-24 | Matsushita Electric Industrial Co., Ltd. | Substrat auquel est attachee une electrode et procede de preparation associe |
TW466784B (en) * | 2000-09-19 | 2001-12-01 | United Epitaxy Co Ltd | Method to manufacture high luminescence LED by using glass pasting |
WO2002045466A1 (fr) * | 2000-11-30 | 2002-06-06 | Canon Kabushiki Kaisha | Element luminescent et ecran |
-
2004
- 2004-02-18 TW TW093103914A patent/TWI231054B/zh not_active IP Right Cessation
- 2004-03-09 US US10/548,534 patent/US20060237741A1/en not_active Abandoned
- 2004-03-09 CN CNB2004800097637A patent/CN100426537C/zh not_active Expired - Fee Related
- 2004-03-09 KR KR1020057017181A patent/KR100681789B1/ko not_active IP Right Cessation
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0616376A1 (en) * | 1993-03-19 | 1994-09-21 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
JPH0722176A (ja) * | 1993-06-29 | 1995-01-24 | Fuji Electric Co Ltd | 薄膜発光素子 |
JP2000173747A (ja) * | 1998-11-30 | 2000-06-23 | Kyocera Corp | 押圧加熱型セラミックヒータ |
JP2002084029A (ja) * | 2000-09-11 | 2002-03-22 | Canon Inc | ヒートパイプを備えた半導体光素子 |
US20020053872A1 (en) * | 2000-11-07 | 2002-05-09 | Kuang-Neng Yang | Light emitting diode and method of making the same |
JP2002261294A (ja) * | 2001-02-28 | 2002-09-13 | Japan Science & Technology Corp | 透明酸化物p−n接合ダイオード |
JP2002289969A (ja) * | 2001-03-27 | 2002-10-04 | Ricoh Co Ltd | 面発光レーザ素子およびその作製方法および面発光レーザアレイおよび波長多重伝送システム |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107658373A (zh) * | 2012-03-28 | 2018-02-02 | 晶元光电股份有限公司 | 发光二极管结构与其制造方法 |
CN107658373B (zh) * | 2012-03-28 | 2020-01-21 | 晶元光电股份有限公司 | 发光二极管结构与其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20050113227A (ko) | 2005-12-01 |
TW200418211A (en) | 2004-09-16 |
KR100681789B1 (ko) | 2007-02-12 |
US20060237741A1 (en) | 2006-10-26 |
TWI231054B (en) | 2005-04-11 |
CN1774820A (zh) | 2006-05-17 |
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Owner name: TOYODA GOSEI CO., LTD. Free format text: FORMER OWNER: SHOWA DENKO K.K. Effective date: 20130123 |
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