CN100426469C - 用于有机硅化物玻璃的一氧化二氮去除光刻胶的方法 - Google Patents

用于有机硅化物玻璃的一氧化二氮去除光刻胶的方法 Download PDF

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Publication number
CN100426469C
CN100426469C CNB2004800291641A CN200480029164A CN100426469C CN 100426469 C CN100426469 C CN 100426469C CN B2004800291641 A CNB2004800291641 A CN B2004800291641A CN 200480029164 A CN200480029164 A CN 200480029164A CN 100426469 C CN100426469 C CN 100426469C
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China
Prior art keywords
photoresist
layer
organosilicide
organic
glass
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Expired - Fee Related
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CNB2004800291641A
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English (en)
Chinese (zh)
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CN1864249A (zh
Inventor
拉奥·安纳普勒格德
朱海伦
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/085—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving intermediate temporary filling with material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/087—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving multiple stacked pre-patterned masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
CNB2004800291641A 2003-10-08 2004-10-05 用于有机硅化物玻璃的一氧化二氮去除光刻胶的方法 Expired - Fee Related CN100426469C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/680,895 2003-10-08
US10/680,895 US7202177B2 (en) 2003-10-08 2003-10-08 Nitrous oxide stripping process for organosilicate glass

Publications (2)

Publication Number Publication Date
CN1864249A CN1864249A (zh) 2006-11-15
CN100426469C true CN100426469C (zh) 2008-10-15

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Family Applications (1)

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CNB2004800291641A Expired - Fee Related CN100426469C (zh) 2003-10-08 2004-10-05 用于有机硅化物玻璃的一氧化二氮去除光刻胶的方法

Country Status (7)

Country Link
US (1) US7202177B2 (https=)
EP (1) EP1671363A4 (https=)
JP (1) JP2007508698A (https=)
KR (1) KR101197070B1 (https=)
CN (1) CN100426469C (https=)
TW (1) TW200523689A (https=)
WO (1) WO2005038892A1 (https=)

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US20050136681A1 (en) * 2003-12-23 2005-06-23 Tokyo Electron Limited Method and apparatus for removing photoresist from a substrate
KR100666881B1 (ko) * 2005-06-10 2007-01-10 삼성전자주식회사 포토레지스트 제거 방법 및 이를 이용한 반도체 소자의제조 방법.
CN101310175A (zh) * 2005-11-17 2008-11-19 Nxp股份有限公司 湿度传感器
US7932181B2 (en) * 2006-06-20 2011-04-26 Lam Research Corporation Edge gas injection for critical dimension uniformity improvement
US8283255B2 (en) * 2007-05-24 2012-10-09 Lam Research Corporation In-situ photoresist strip during plasma etching of active hard mask
US20100130017A1 (en) * 2008-11-21 2010-05-27 Axcelis Technologies, Inc. Front end of line plasma mediated ashing processes and apparatus
US20110226280A1 (en) * 2008-11-21 2011-09-22 Axcelis Technologies, Inc. Plasma mediated ashing processes
CN101996934B (zh) * 2009-08-20 2012-07-18 中芯国际集成电路制造(上海)有限公司 半导体器件的制作方法
JP6960839B2 (ja) 2017-12-13 2021-11-05 東京エレクトロン株式会社 半導体装置の製造方法
CN115799028B (zh) * 2021-09-10 2025-12-05 长鑫存储技术有限公司 半导体结构的制备方法及半导体结构

Citations (3)

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US5126231A (en) * 1990-02-26 1992-06-30 Applied Materials, Inc. Process for multi-layer photoresist etching with minimal feature undercut and unchanging photoresist load during etch
CN1343001A (zh) * 2000-06-29 2002-04-03 株式会社D.M.S 用于照射紫外线的装置
US20030044725A1 (en) * 2001-07-24 2003-03-06 Chen-Chiu Hsue Dual damascene process using metal hard mask

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US111041A (en) * 1871-01-17 Improvement in hay-tedders
US5910453A (en) * 1996-01-16 1999-06-08 Advanced Micro Devices, Inc. Deep UV anti-reflection coating etch
US5970376A (en) * 1997-12-29 1999-10-19 Taiwan Semiconductor Manufacturing Company, Ltd. Post via etch plasma treatment method for forming with attenuated lateral etching a residue free via through a silsesquioxane spin-on-glass (SOG) dielectric layer
JP2000183040A (ja) * 1998-12-15 2000-06-30 Canon Inc 有機層間絶縁膜エッチング後のレジストアッシング方法
JP4221847B2 (ja) * 1999-10-25 2009-02-12 パナソニック電工株式会社 プラズマ処理装置及びプラズマ点灯方法
US6323121B1 (en) * 2000-05-12 2001-11-27 Taiwan Semiconductor Manufacturing Company Fully dry post-via-etch cleaning method for a damascene process
US6426304B1 (en) * 2000-06-30 2002-07-30 Lam Research Corporation Post etch photoresist strip with hydrogen for organosilicate glass low-κ etch applications
US6413877B1 (en) 2000-12-22 2002-07-02 Lam Research Corporation Method of preventing damage to organo-silicate-glass materials during resist stripping
US6514860B1 (en) * 2001-01-31 2003-02-04 Advanced Micro Devices, Inc. Integration of organic fill for dual damascene process
US6777344B2 (en) 2001-02-12 2004-08-17 Lam Research Corporation Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications
US6566283B1 (en) * 2001-02-15 2003-05-20 Advanced Micro Devices, Inc. Silane treatment of low dielectric constant materials in semiconductor device manufacturing
US20020139771A1 (en) * 2001-02-22 2002-10-03 Ping Jiang Gas switching during an etch process to modulate the characteristics of the etch
US6617257B2 (en) * 2001-03-30 2003-09-09 Lam Research Corporation Method of plasma etching organic antireflective coating
KR100430472B1 (ko) * 2001-07-12 2004-05-10 삼성전자주식회사 듀얼 다마신 공정을 이용한 배선 형성 방법
US6498112B1 (en) 2001-07-13 2002-12-24 Advanced Micro Devices, Inc. Graded oxide caps on low dielectric constant (low K) chemical vapor deposition (CVD) films
JP2003092349A (ja) * 2001-09-18 2003-03-28 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2003303880A (ja) * 2002-04-10 2003-10-24 Nec Corp 積層層間絶縁膜構造を利用した配線構造およびその製造方法
US7253112B2 (en) * 2002-06-04 2007-08-07 Taiwan Semiconductor Manufacturing Co., Ltd. Dual damascene process
JP2004079901A (ja) * 2002-08-21 2004-03-11 Nec Electronics Corp 半導体装置及びその製造方法
US6720256B1 (en) * 2002-12-04 2004-04-13 Taiwan Semiconductor Manufacturing Company Method of dual damascene patterning
US6916697B2 (en) * 2003-10-08 2005-07-12 Lam Research Corporation Etch back process using nitrous oxide

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5126231A (en) * 1990-02-26 1992-06-30 Applied Materials, Inc. Process for multi-layer photoresist etching with minimal feature undercut and unchanging photoresist load during etch
CN1343001A (zh) * 2000-06-29 2002-04-03 株式会社D.M.S 用于照射紫外线的装置
US20030044725A1 (en) * 2001-07-24 2003-03-06 Chen-Chiu Hsue Dual damascene process using metal hard mask

Also Published As

Publication number Publication date
EP1671363A4 (en) 2010-01-13
KR20060107758A (ko) 2006-10-16
JP2007508698A (ja) 2007-04-05
CN1864249A (zh) 2006-11-15
US7202177B2 (en) 2007-04-10
US20050079710A1 (en) 2005-04-14
EP1671363A1 (en) 2006-06-21
KR101197070B1 (ko) 2012-11-06
WO2005038892A1 (en) 2005-04-28
TW200523689A (en) 2005-07-16

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