CN100425666C - 含硼抛光系统及方法 - Google Patents

含硼抛光系统及方法 Download PDF

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Publication number
CN100425666C
CN100425666C CNB028212541A CN02821254A CN100425666C CN 100425666 C CN100425666 C CN 100425666C CN B028212541 A CNB028212541 A CN B028212541A CN 02821254 A CN02821254 A CN 02821254A CN 100425666 C CN100425666 C CN 100425666C
Authority
CN
China
Prior art keywords
chemical
mechanical polishing
polishing system
water
abrasive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB028212541A
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English (en)
Chinese (zh)
Other versions
CN1575325A (zh
Inventor
赵瑞杰
史蒂文·K·格鲁宾
艾萨克·K·彻里安
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of CN1575325A publication Critical patent/CN1575325A/zh
Application granted granted Critical
Publication of CN100425666C publication Critical patent/CN100425666C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245—Pads with fixed abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1002—Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina
    • Y10T156/1051—Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina by folding

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CNB028212541A 2001-10-24 2002-09-24 含硼抛光系统及方法 Expired - Fee Related CN100425666C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/033,152 2001-10-24
US10/033,152 US6705926B2 (en) 2001-10-24 2001-10-24 Boron-containing polishing system and method

Publications (2)

Publication Number Publication Date
CN1575325A CN1575325A (zh) 2005-02-02
CN100425666C true CN100425666C (zh) 2008-10-15

Family

ID=21868825

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028212541A Expired - Fee Related CN100425666C (zh) 2001-10-24 2002-09-24 含硼抛光系统及方法

Country Status (8)

Country Link
US (2) US6705926B2 (enExample)
EP (1) EP1448736B1 (enExample)
JP (1) JP2005507165A (enExample)
CN (1) CN100425666C (enExample)
AT (1) ATE431388T1 (enExample)
DE (1) DE60232356D1 (enExample)
TW (1) TWI232234B (enExample)
WO (1) WO2003035782A1 (enExample)

Cited By (2)

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US11499072B2 (en) 2019-08-30 2022-11-15 Saint-Gobain Ceramics & Plastics, Inc. Composition and method for conducting a material removing operation
US11518913B2 (en) 2019-08-30 2022-12-06 Saint-Gobain Ceramics & Plastics, Inc. Fluid composition and method for conducting a material removing operation

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US7192335B2 (en) * 2002-08-29 2007-03-20 Micron Technology, Inc. Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates
US7129160B2 (en) 2002-08-29 2006-10-31 Micron Technology, Inc. Method for simultaneously removing multiple conductive materials from microelectronic substrates
US7078308B2 (en) * 2002-08-29 2006-07-18 Micron Technology, Inc. Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate
US7112121B2 (en) * 2000-08-30 2006-09-26 Micron Technology, Inc. Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate
US7220166B2 (en) 2000-08-30 2007-05-22 Micron Technology, Inc. Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate
US7153195B2 (en) * 2000-08-30 2006-12-26 Micron Technology, Inc. Methods and apparatus for selectively removing conductive material from a microelectronic substrate
US6953389B2 (en) * 2001-08-09 2005-10-11 Cheil Industries, Inc. Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching
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US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7112122B2 (en) * 2003-09-17 2006-09-26 Micron Technology, Inc. Methods and apparatus for removing conductive material from a microelectronic substrate
US7419911B2 (en) * 2003-11-10 2008-09-02 Ekc Technology, Inc. Compositions and methods for rapidly removing overfilled substrates
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US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
US7566391B2 (en) * 2004-09-01 2009-07-28 Micron Technology, Inc. Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media
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US7998335B2 (en) * 2005-06-13 2011-08-16 Cabot Microelectronics Corporation Controlled electrochemical polishing method
US7678702B2 (en) * 2005-08-31 2010-03-16 Air Products And Chemicals, Inc. CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use
US7803203B2 (en) 2005-09-26 2010-09-28 Cabot Microelectronics Corporation Compositions and methods for CMP of semiconductor materials
US20070075042A1 (en) * 2005-10-05 2007-04-05 Siddiqui Junaid A Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method
US20070218692A1 (en) * 2006-01-31 2007-09-20 Nissan Chemical Industries, Ltd. Copper-based metal polishing compositions and polishing processes
US20100190339A1 (en) * 2007-07-26 2010-07-29 Zhan Chen Compositions and methods for chemical-mechanical polishing of phase change materials
US7915071B2 (en) * 2007-08-30 2011-03-29 Dupont Air Products Nanomaterials, Llc Method for chemical mechanical planarization of chalcogenide materials
US20090124173A1 (en) * 2007-11-09 2009-05-14 Cabot Microelectronics Corporation Compositions and methods for ruthenium and tantalum barrier cmp
US9242222B2 (en) * 2010-04-19 2016-01-26 The University Of Toledo Aldose-ketose transformation for separation and/or chemical conversion of C6 and C5 sugars from biomass materials
RU2589482C2 (ru) * 2010-10-07 2016-07-10 Басф Се Водная полирующая композиция и способ химико-механического полирования подложек, имеющих структурированные или неструктурированные диэлектрические слои с низкой диэлектрической постоянной
WO2012051380A2 (en) * 2010-10-13 2012-04-19 Advanced Technology Materials, Inc. Composition for and method of suppressing titanium nitride corrosion
US8546617B1 (en) 2012-03-23 2013-10-01 Empire Technology Development Llc Dioxaborinanes and uses thereof
IN2015DN00805A (enExample) * 2012-07-31 2015-07-03 Empire Technology Dev Llc
US9120938B2 (en) 2012-07-31 2015-09-01 Empire Technology Development Llc Polymerizable organoboron alkyd resin anti fouling coatings
US9073177B2 (en) * 2012-07-31 2015-07-07 Saint-Gobain Abrasives, Inc. Abrasive article comprising abrasive particles of a composite composition
WO2014143037A1 (en) * 2013-03-15 2014-09-18 William Brenden Carlson Boron containing compounds and uses thereof
CN103497128B (zh) * 2013-09-04 2016-06-08 常州大学 一种合成对称二芳基二硫醚的方法
US10414947B2 (en) * 2015-03-05 2019-09-17 Cabot Microelectronics Corporation Polishing composition containing ceria particles and method of use
JP6564624B2 (ja) * 2015-06-10 2019-08-21 株式会社ディスコ 研削砥石
JP6857495B2 (ja) * 2016-12-26 2021-04-14 ニッタ・デュポン株式会社 研磨用組成物
KR102837739B1 (ko) 2018-12-03 2025-07-22 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 에칭 조성물
CN109913133B (zh) * 2019-03-29 2020-09-29 大连理工大学 一种钇铝石榴石晶体的高效高质量化学机械抛光液
KR20230055586A (ko) * 2021-10-19 2023-04-26 에스케이하이닉스 주식회사 보론 실리콘 화합물 연마용 cmp 슬러리 조성물과 이를 이용한 cmp 방법 및 반도체 소자의 제조 방법
CN115873507B (zh) * 2022-12-06 2025-09-23 万华化学集团电子材料有限公司 一种钨化学机械抛光液及其应用
CN116478624A (zh) * 2023-04-28 2023-07-25 万华化学集团电子材料有限公司 一种钨化学机械抛光液及其应用

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11499072B2 (en) 2019-08-30 2022-11-15 Saint-Gobain Ceramics & Plastics, Inc. Composition and method for conducting a material removing operation
US11518913B2 (en) 2019-08-30 2022-12-06 Saint-Gobain Ceramics & Plastics, Inc. Fluid composition and method for conducting a material removing operation
US11851586B2 (en) 2019-08-30 2023-12-26 Saint-Gobain Ceramics & Plastics, Inc. Composition and method for conducting a material removing operation
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Also Published As

Publication number Publication date
US6705926B2 (en) 2004-03-16
JP2005507165A (ja) 2005-03-10
WO2003035782A1 (en) 2003-05-01
US20040180612A1 (en) 2004-09-16
CN1575325A (zh) 2005-02-02
US20030077985A1 (en) 2003-04-24
US7001253B2 (en) 2006-02-21
EP1448736A1 (en) 2004-08-25
DE60232356D1 (enExample) 2009-06-25
ATE431388T1 (de) 2009-05-15
TWI232234B (en) 2005-05-11
EP1448736B1 (en) 2009-05-13

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