CN100418768C - 介电体、压电体、喷墨头、喷墨记录装置及喷墨头制造方法 - Google Patents

介电体、压电体、喷墨头、喷墨记录装置及喷墨头制造方法 Download PDF

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Publication number
CN100418768C
CN100418768C CNB2005100625742A CN200510062574A CN100418768C CN 100418768 C CN100418768 C CN 100418768C CN B2005100625742 A CNB2005100625742 A CN B2005100625742A CN 200510062574 A CN200510062574 A CN 200510062574A CN 100418768 C CN100418768 C CN 100418768C
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China
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layer
orientation
dielectric
mentioned
substrate
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Expired - Fee Related
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Chinese (zh)
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CN1676331A (zh
Inventor
武田宪一
伊福俊博
福井哲朗
舟洼浩
冈本庄司
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials
    • H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047—Membrane type

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Ceramic Capacitors (AREA)
  • Semiconductor Memories (AREA)
CNB2005100625742A 2004-03-29 2005-03-29 介电体、压电体、喷墨头、喷墨记录装置及喷墨头制造方法 Expired - Fee Related CN100418768C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004094597 2004-03-29
JP2004094597 2004-03-29
JP2004-094597 2004-03-29

Publications (2)

Publication Number Publication Date
CN1676331A CN1676331A (zh) 2005-10-05
CN100418768C true CN100418768C (zh) 2008-09-17

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Country Status (7)

Country Link
US (1) US7265483B2 (cg-RX-API-DMAC10.html)
EP (1) EP1585180B1 (cg-RX-API-DMAC10.html)
JP (2) JP2005313628A (cg-RX-API-DMAC10.html)
KR (1) KR100777468B1 (cg-RX-API-DMAC10.html)
CN (1) CN100418768C (cg-RX-API-DMAC10.html)
DE (1) DE602005024208D1 (cg-RX-API-DMAC10.html)
TW (1) TWI253392B (cg-RX-API-DMAC10.html)

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US7453144B2 (en) * 2005-06-29 2008-11-18 Intel Corporation Thin film capacitors and methods of making the same
JP5188076B2 (ja) * 2006-04-03 2013-04-24 キヤノン株式会社 圧電素子及びその製造方法、電子デバイス、インクジェット装置
JP2008258516A (ja) * 2007-04-09 2008-10-23 Funai Electric Co Ltd 圧電素子及び結晶質セラミックスの成膜方法
KR100901201B1 (ko) * 2008-02-22 2009-06-08 서울시립대학교 산학협력단 초음파 스피커용 세슘디옥사이드가 첨가된피에스엔-피지티 세라믹스의 제조방법
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JP5527527B2 (ja) 2010-03-12 2014-06-18 セイコーエプソン株式会社 液体噴射ヘッド及び液体噴射装置
TWI450426B (zh) * 2010-09-09 2014-08-21 Microjet Technology Co Ltd 壓電致動模組及其所適用之壓電噴墨頭之製造方法
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JP5751407B2 (ja) * 2011-01-19 2015-07-22 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外線センサー
JP5743059B2 (ja) * 2011-01-19 2015-07-01 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外線センサー
JP5743060B2 (ja) * 2011-01-19 2015-07-01 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外線センサー
CN102136315B (zh) * 2011-03-21 2012-08-15 四川师范大学 多层陶瓷全面积LNO/Ag/LNO复合电极及制备方法
WO2013018603A1 (ja) * 2011-07-29 2013-02-07 株式会社村田製作所 弾性波デバイスの製造方法
JP5836754B2 (ja) * 2011-10-04 2015-12-24 富士フイルム株式会社 圧電体素子及びその製造方法
US9761785B2 (en) 2011-10-17 2017-09-12 The United States Of America As Represented By The Secretary Of The Army Stylo-epitaxial piezoelectric and ferroelectric devices and method of manufacturing
US8866367B2 (en) 2011-10-17 2014-10-21 The United States Of America As Represented By The Secretary Of The Army Thermally oxidized seed layers for the production of {001} textured electrodes and PZT devices and method of making
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JP5382196B2 (ja) * 2012-12-27 2014-01-08 セイコーエプソン株式会社 液体吐出ヘッドの製造方法
JP6123992B2 (ja) * 2013-03-05 2017-05-10 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、圧電素子及びその製造方法
JP6142597B2 (ja) * 2013-03-18 2017-06-07 株式会社リコー 圧電体薄膜素子および該圧電体薄膜素子の製造方法、並びに圧電アクチュエータ、液滴吐出ヘッドおよび液滴吐出装置
JP5528612B1 (ja) * 2013-07-09 2014-06-25 Ｒｏｃａ株式会社 半導体装置
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CN108400020B (zh) * 2018-03-06 2020-10-30 云南大学 一类层状钙钛矿型纳米氧化物的超级电容器电极材料
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WO2020066713A1 (ja) * 2018-09-28 2020-04-02 日本碍子株式会社 センサ素子
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106183419A (zh) * 2013-08-09 2016-12-07 精工爱普生株式会社 液体喷射头以及液体喷射装置
CN106183419B (zh) * 2013-08-09 2018-05-22 精工爱普生株式会社 液体喷射头以及液体喷射装置

Also Published As

Publication number Publication date
EP1585180B1 (en) 2010-10-20
US7265483B2 (en) 2007-09-04
EP1585180A2 (en) 2005-10-12
DE602005024208D1 (de) 2010-12-02
JP2011192975A (ja) 2011-09-29
CN1676331A (zh) 2005-10-05
KR20060044810A (ko) 2006-05-16
JP2005313628A (ja) 2005-11-10
KR100777468B1 (ko) 2007-11-20
TW200602195A (en) 2006-01-16
TWI253392B (en) 2006-04-21
US20050213020A1 (en) 2005-09-29
EP1585180A3 (en) 2007-10-03

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