CN100414438C - 曝光装置 - Google Patents

曝光装置 Download PDF

Info

Publication number
CN100414438C
CN100414438C CNB031560024A CN03156002A CN100414438C CN 100414438 C CN100414438 C CN 100414438C CN B031560024 A CNB031560024 A CN B031560024A CN 03156002 A CN03156002 A CN 03156002A CN 100414438 C CN100414438 C CN 100414438C
Authority
CN
China
Prior art keywords
optical system
exposure
photomask
pattern
photosensitive substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB031560024A
Other languages
English (en)
Chinese (zh)
Other versions
CN1488999A (zh
Inventor
福原和也
井上壮一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN1488999A publication Critical patent/CN1488999A/zh
Application granted granted Critical
Publication of CN100414438C publication Critical patent/CN100414438C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CNB031560024A 2002-08-30 2003-08-28 曝光装置 Expired - Fee Related CN100414438C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP255210/2002 2002-08-30
JP2002255210A JP4005881B2 (ja) 2002-08-30 2002-08-30 露光装置の検査方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CNB2007100964172A Division CN100526997C (zh) 2002-08-30 2003-08-28 曝光装置的检查方法

Publications (2)

Publication Number Publication Date
CN1488999A CN1488999A (zh) 2004-04-14
CN100414438C true CN100414438C (zh) 2008-08-27

Family

ID=32060786

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB031560024A Expired - Fee Related CN100414438C (zh) 2002-08-30 2003-08-28 曝光装置
CNB2007100964172A Expired - Fee Related CN100526997C (zh) 2002-08-30 2003-08-28 曝光装置的检查方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB2007100964172A Expired - Fee Related CN100526997C (zh) 2002-08-30 2003-08-28 曝光装置的检查方法

Country Status (5)

Country Link
US (2) US7286216B2 (cg-RX-API-DMAC7.html)
JP (1) JP4005881B2 (cg-RX-API-DMAC7.html)
CN (2) CN100414438C (cg-RX-API-DMAC7.html)
NL (1) NL1024195C2 (cg-RX-API-DMAC7.html)
TW (1) TW200407966A (cg-RX-API-DMAC7.html)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3787123B2 (ja) * 2003-02-13 2006-06-21 株式会社東芝 検査方法、プロセッサ及び半導体装置の製造方法
WO2005106593A2 (en) * 2004-04-14 2005-11-10 Litel Instruments Method and apparatus for measurement of exit pupil transmittance
JP2005337957A (ja) * 2004-05-28 2005-12-08 Dainippon Screen Mfg Co Ltd 基板検査装置
EP1852894A1 (en) * 2005-02-25 2007-11-07 Nikon Corporation Exposure method and apparatus, and electronic device manufacturing method
JP2006303196A (ja) 2005-04-20 2006-11-02 Canon Inc 測定装置及びそれを有する露光装置
JP4771871B2 (ja) * 2006-06-15 2011-09-14 Ｈｏｙａ株式会社 パターン欠陥検査方法、パターン欠陥検査用テストパターン基板、及びパターン欠陥検査装置、並びにフォトマスクの製造方法、及び表示デバイス用基板の製造方法
DE102008004762A1 (de) 2008-01-16 2009-07-30 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie mit einer Messeinrichtung
JP5446648B2 (ja) * 2008-10-07 2014-03-19 信越化学工業株式会社 パターン形成方法
KR20100042924A (ko) * 2008-10-17 2010-04-27 삼성전자주식회사 포토 마스크의 헤이즈 모니터링 시스템 및 모니터링 방법
KR101511158B1 (ko) * 2008-12-16 2015-04-13 삼성전자주식회사 레티클 에러 검출 방법
EP2823288B1 (en) * 2012-03-07 2021-05-05 KLA-Tencor Corporation Wafer and reticle inspection systems and method for selecting illumination pupil configurations
TWI489200B (zh) * 2012-05-29 2015-06-21 Sino American Silicon Prod Inc 半圓對接式光罩圖案的設計方法
CN106154756B (zh) * 2015-04-07 2020-10-09 联华电子股份有限公司 照明系统以及使用其形成鳍状结构的方法
JP7596106B2 (ja) * 2020-09-28 2024-12-09 キヤノン株式会社 情報処理装置、検査方法、プログラム、露光装置、決定方法、及び物品の製造方法
EP4095573A1 (en) * 2021-05-27 2022-11-30 ASML Netherlands B.V. Diffraction grating for measurements in euv-exposure apparatuses

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5448350A (en) * 1990-07-19 1995-09-05 Canon Kabushiki Kaisha Surface state inspection apparatus and exposure apparatus including the same
CN1136708A (zh) * 1995-03-28 1996-11-27 三星航空产业株式会社 用于制造半导体器件的曝光装置
US5581089A (en) * 1990-01-26 1996-12-03 Canon Kabushiki Kaisha Apparatus and method for inspecting a reticle for color centers
CN1204071A (zh) * 1997-06-02 1999-01-06 三菱电机株式会社 投影曝光装置及方法、振幅象差评价方法及象差消除滤光器
US6153886A (en) * 1993-02-19 2000-11-28 Nikon Corporation Alignment apparatus in projection exposure apparatus
CN1281165A (zh) * 1999-07-14 2001-01-24 东芝株式会社 曝光方法及其装置
CN1349252A (zh) * 2000-08-23 2002-05-15 索尼株式会社 图案检查设备,和使用其的曝光设备控制系统
US6597435B2 (en) * 2001-10-09 2003-07-22 Nikon Corporation Reticle stage with reaction force cancellation

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61210627A (ja) 1985-03-15 1986-09-18 Canon Inc 有効光源測定用ピンホ−ル板
DE3635689A1 (de) * 1986-10-21 1988-05-05 Messerschmitt Boelkow Blohm Verfahren zur vermessung der optischen achse eines leitstrahlprojektors und einrichtung zur durchfuehrung des verfahrens
JP2928277B2 (ja) 1989-08-03 1999-08-03 株式会社日立製作所 投影露光方法及びその装置
JP3158691B2 (ja) * 1992-08-07 2001-04-23 株式会社ニコン 露光装置及び方法、並びに照明光学装置
JP3463335B2 (ja) * 1994-02-17 2003-11-05 株式会社ニコン 投影露光装置
JP3341269B2 (ja) * 1993-12-22 2002-11-05 株式会社ニコン 投影露光装置、露光方法、半導体の製造方法及び投影光学系の調整方法
US5978085A (en) 1997-03-07 1999-11-02 Litel Instruments Apparatus method of measurement and method of data analysis for correction of optical system
US5973771A (en) * 1997-03-26 1999-10-26 International Business Machines Corporation Pupil imaging reticle for photo steppers
US6356345B1 (en) 1998-02-11 2002-03-12 Litel Instruments In-situ source metrology instrument and method of use
JP3302926B2 (ja) * 1998-07-02 2002-07-15 株式会社東芝 露光装置の検査方法
JP3513031B2 (ja) * 1998-10-09 2004-03-31 株式会社東芝 アライメント装置の調整方法、収差測定方法及び収差測定マーク
US6048651A (en) 1998-10-23 2000-04-11 International Business Machines Corporation Fresnel zone mask for pupilgram
JP3863339B2 (ja) * 2000-03-28 2006-12-27 株式会社東芝 光軸ずれ測定方法
JP2001330964A (ja) 2000-05-22 2001-11-30 Nikon Corp 露光装置および該露光装置を用いたマイクロデバイス製造方法
JP2002083761A (ja) 2000-09-08 2002-03-22 Canon Inc 露光装置及び露光方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5581089A (en) * 1990-01-26 1996-12-03 Canon Kabushiki Kaisha Apparatus and method for inspecting a reticle for color centers
US5448350A (en) * 1990-07-19 1995-09-05 Canon Kabushiki Kaisha Surface state inspection apparatus and exposure apparatus including the same
US6153886A (en) * 1993-02-19 2000-11-28 Nikon Corporation Alignment apparatus in projection exposure apparatus
CN1136708A (zh) * 1995-03-28 1996-11-27 三星航空产业株式会社 用于制造半导体器件的曝光装置
CN1204071A (zh) * 1997-06-02 1999-01-06 三菱电机株式会社 投影曝光装置及方法、振幅象差评价方法及象差消除滤光器
CN1281165A (zh) * 1999-07-14 2001-01-24 东芝株式会社 曝光方法及其装置
CN1349252A (zh) * 2000-08-23 2002-05-15 索尼株式会社 图案检查设备,和使用其的曝光设备控制系统
US6597435B2 (en) * 2001-10-09 2003-07-22 Nikon Corporation Reticle stage with reaction force cancellation

Also Published As

Publication number Publication date
US7286216B2 (en) 2007-10-23
US20070236691A1 (en) 2007-10-11
CN101063827A (zh) 2007-10-31
JP2004095871A (ja) 2004-03-25
CN1488999A (zh) 2004-04-14
NL1024195C2 (nl) 2007-10-03
US7327449B2 (en) 2008-02-05
CN100526997C (zh) 2009-08-12
US20040119973A1 (en) 2004-06-24
TWI300954B (cg-RX-API-DMAC7.html) 2008-09-11
TW200407966A (en) 2004-05-16
JP4005881B2 (ja) 2007-11-14
NL1024195A1 (nl) 2004-03-02

Similar Documents

Publication Publication Date Title
US7327449B2 (en) Exposure apparatus inspection method and exposure apparatus
JP3302926B2 (ja) 露光装置の検査方法
US6972836B2 (en) Measuring method of illuminance unevenness of exposure apparatus, correcting method of illuminance unevenness, manufacturing method of semiconductor device, and exposure apparatus
JP2002184667A (ja) 補正部材の製造方法、投影光学系の製造方法および露光装置の調整方法
JP2003121993A (ja) フォーカスモニタ用フォトマスク、フォーカスモニタ方法、フォーカスモニタ用装置および装置の製造方法
TWI295416B (en) Optical element, exposure apparatus, and device manufacturing method
US6344896B1 (en) Method and apparatus for measuring positional shift/distortion by aberration
JP2003007598A (ja) フォーカスモニタ方法およびフォーカスモニタ用装置ならびに半導体装置の製造方法
TWI409595B (zh) 測量設備，具有此測量設備之投影曝光設備以及裝置製造方法
JP2003156832A (ja) 収差計測用フォトマスク、収差計測方法、収差計測用装置および装置の製造方法
JP3870153B2 (ja) 光学特性の測定方法
JP2004247495A (ja) 検査方法、プロセッサ及び半導体装置の製造方法
KR20000071810A (ko) 수차에 기인한 위치상의 이동과 위치 어긋남의 측정 장치및 방법
JP3984710B2 (ja) 露光方法及び露光装置
JPH11184070A (ja) 収差測定方法および収差測定用フォトマスク
JPH06124870A (ja) 投影露光装置及び露光方法
JP2000021761A (ja) 露光方法及び露光装置
KR100618890B1 (ko) 렌즈 수차 평가용 포토 마스크, 그의 제조방법 및 그것을이용한 렌즈 수차 평가방법
JP2000258300A (ja) 投影光学系の結像特性計測装置及び計測方法並びに露光装置
JP3521905B2 (ja) 露光方法及び半導体デバイスの製造方法
KR100437605B1 (ko) 노광 장비의 렌즈 평가용 마스크 패턴
JP2004061915A (ja) マスク検査方法及び露光装置
JP2000156344A (ja) 露光方法及び露光装置
JP3262073B2 (ja) 露光方法及び露光装置
JPH11354411A (ja) 露光装置の評価方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080827

Termination date: 20130828