NL1024195A1 - Inspectiewerkwijze voor een belichtingsinrichting en een belichtingsinrichting. - Google Patents
Inspectiewerkwijze voor een belichtingsinrichting en een belichtingsinrichting.Info
- Publication number
- NL1024195A1 NL1024195A1 NL1024195A NL1024195A NL1024195A1 NL 1024195 A1 NL1024195 A1 NL 1024195A1 NL 1024195 A NL1024195 A NL 1024195A NL 1024195 A NL1024195 A NL 1024195A NL 1024195 A1 NL1024195 A1 NL 1024195A1
- Authority
- NL
- Netherlands
- Prior art keywords
- exposure device
- inspection method
- exposure
- inspection
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002255210A JP4005881B2 (ja) | 2002-08-30 | 2002-08-30 | 露光装置の検査方法 |
JP2002255210 | 2002-08-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
NL1024195A1 true NL1024195A1 (nl) | 2004-03-02 |
NL1024195C2 NL1024195C2 (nl) | 2007-10-03 |
Family
ID=32060786
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL1024195A NL1024195C2 (nl) | 2002-08-30 | 2003-08-29 | Inspectiewerkwijze voor een belichtingsinrichting en een belichtingsinrichting. |
Country Status (5)
Country | Link |
---|---|
US (2) | US7286216B2 (nl) |
JP (1) | JP4005881B2 (nl) |
CN (2) | CN100414438C (nl) |
NL (1) | NL1024195C2 (nl) |
TW (1) | TW200407966A (nl) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3787123B2 (ja) * | 2003-02-13 | 2006-06-21 | 株式会社東芝 | 検査方法、プロセッサ及び半導体装置の製造方法 |
US7688426B2 (en) * | 2004-04-14 | 2010-03-30 | Litel Instruments | Method and apparatus for measurement of exit pupil transmittance |
JP2005337957A (ja) * | 2004-05-28 | 2005-12-08 | Dainippon Screen Mfg Co Ltd | 基板検査装置 |
WO2006090807A1 (ja) * | 2005-02-25 | 2006-08-31 | Nikon Corporation | 露光方法および装置、ならびに電子デバイス製造方法 |
JP2006303196A (ja) | 2005-04-20 | 2006-11-02 | Canon Inc | 測定装置及びそれを有する露光装置 |
JP4771871B2 (ja) * | 2006-06-15 | 2011-09-14 | Hoya株式会社 | パターン欠陥検査方法、パターン欠陥検査用テストパターン基板、及びパターン欠陥検査装置、並びにフォトマスクの製造方法、及び表示デバイス用基板の製造方法 |
DE102008004762A1 (de) | 2008-01-16 | 2009-07-30 | Carl Zeiss Smt Ag | Projektionsbelichtungsanlage für die Mikrolithographie mit einer Messeinrichtung |
JP5446648B2 (ja) * | 2008-10-07 | 2014-03-19 | 信越化学工業株式会社 | パターン形成方法 |
KR20100042924A (ko) * | 2008-10-17 | 2010-04-27 | 삼성전자주식회사 | 포토 마스크의 헤이즈 모니터링 시스템 및 모니터링 방법 |
KR101511158B1 (ko) * | 2008-12-16 | 2015-04-13 | 삼성전자주식회사 | 레티클 에러 검출 방법 |
US9347891B2 (en) * | 2012-03-07 | 2016-05-24 | Kla-Tencor Corporation | Wafer and reticle inspection systems and methods for selecting illumination pupil configurations |
TWI489200B (zh) * | 2012-05-29 | 2015-06-21 | Sino American Silicon Prod Inc | 半圓對接式光罩圖案的設計方法 |
CN111443576B (zh) * | 2015-04-07 | 2023-04-07 | 联华电子股份有限公司 | 照明系统以及使用其形成鳍状结构的方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61210627A (ja) | 1985-03-15 | 1986-09-18 | Canon Inc | 有効光源測定用ピンホ−ル板 |
DE3635689A1 (de) * | 1986-10-21 | 1988-05-05 | Messerschmitt Boelkow Blohm | Verfahren zur vermessung der optischen achse eines leitstrahlprojektors und einrichtung zur durchfuehrung des verfahrens |
JP2928277B2 (ja) | 1989-08-03 | 1999-08-03 | 株式会社日立製作所 | 投影露光方法及びその装置 |
JPH03221848A (ja) * | 1990-01-26 | 1991-09-30 | Canon Inc | 異物検査装置 |
JP3048168B2 (ja) * | 1990-07-19 | 2000-06-05 | キヤノン株式会社 | 表面状態検査装置及びこれを備える露光装置 |
JP3158691B2 (ja) * | 1992-08-07 | 2001-04-23 | 株式会社ニコン | 露光装置及び方法、並びに照明光学装置 |
US6153886A (en) * | 1993-02-19 | 2000-11-28 | Nikon Corporation | Alignment apparatus in projection exposure apparatus |
JP3463335B2 (ja) * | 1994-02-17 | 2003-11-05 | 株式会社ニコン | 投影露光装置 |
JP3341269B2 (ja) * | 1993-12-22 | 2002-11-05 | 株式会社ニコン | 投影露光装置、露光方法、半導体の製造方法及び投影光学系の調整方法 |
KR0143814B1 (ko) * | 1995-03-28 | 1998-07-01 | 이대원 | 반도체 노광 장치 |
US5978085A (en) * | 1997-03-07 | 1999-11-02 | Litel Instruments | Apparatus method of measurement and method of data analysis for correction of optical system |
US5973771A (en) * | 1997-03-26 | 1999-10-26 | International Business Machines Corporation | Pupil imaging reticle for photo steppers |
JP3784136B2 (ja) * | 1997-06-02 | 2006-06-07 | 株式会社ルネサステクノロジ | 投影露光装置および投影露光方法 |
US6356345B1 (en) * | 1998-02-11 | 2002-03-12 | Litel Instruments | In-situ source metrology instrument and method of use |
JP3302926B2 (ja) | 1998-07-02 | 2002-07-15 | 株式会社東芝 | 露光装置の検査方法 |
JP3513031B2 (ja) * | 1998-10-09 | 2004-03-31 | 株式会社東芝 | アライメント装置の調整方法、収差測定方法及び収差測定マーク |
US6048651A (en) * | 1998-10-23 | 2000-04-11 | International Business Machines Corporation | Fresnel zone mask for pupilgram |
JP2001027813A (ja) * | 1999-07-14 | 2001-01-30 | Toshiba Corp | 露光方法およびその装置 |
JP3863339B2 (ja) * | 2000-03-28 | 2006-12-27 | 株式会社東芝 | 光軸ずれ測定方法 |
JP2001330964A (ja) | 2000-05-22 | 2001-11-30 | Nikon Corp | 露光装置および該露光装置を用いたマイクロデバイス製造方法 |
JP2002075815A (ja) * | 2000-08-23 | 2002-03-15 | Sony Corp | パターン検査装置及びこれを用いた露光装置制御システム |
JP2002083761A (ja) | 2000-09-08 | 2002-03-22 | Canon Inc | 露光装置及び露光方法 |
US6597435B2 (en) * | 2001-10-09 | 2003-07-22 | Nikon Corporation | Reticle stage with reaction force cancellation |
-
2002
- 2002-08-30 JP JP2002255210A patent/JP4005881B2/ja not_active Expired - Fee Related
-
2003
- 2003-08-21 TW TW092123011A patent/TW200407966A/zh not_active IP Right Cessation
- 2003-08-28 US US10/650,013 patent/US7286216B2/en not_active Expired - Fee Related
- 2003-08-28 CN CNB031560024A patent/CN100414438C/zh not_active Expired - Fee Related
- 2003-08-28 CN CNB2007100964172A patent/CN100526997C/zh not_active Expired - Fee Related
- 2003-08-29 NL NL1024195A patent/NL1024195C2/nl not_active IP Right Cessation
-
2007
- 2007-06-05 US US11/806,976 patent/US7327449B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20040119973A1 (en) | 2004-06-24 |
TWI300954B (nl) | 2008-09-11 |
JP2004095871A (ja) | 2004-03-25 |
JP4005881B2 (ja) | 2007-11-14 |
TW200407966A (en) | 2004-05-16 |
NL1024195C2 (nl) | 2007-10-03 |
US7286216B2 (en) | 2007-10-23 |
US20070236691A1 (en) | 2007-10-11 |
US7327449B2 (en) | 2008-02-05 |
CN100414438C (zh) | 2008-08-27 |
CN1488999A (zh) | 2004-04-14 |
CN100526997C (zh) | 2009-08-12 |
CN101063827A (zh) | 2007-10-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AD1A | A request for search or an international type search has been filed | ||
RD2N | Patents in respect of which a decision has been taken or a report has been made (novelty report) |
Effective date: 20070531 |
|
PD2B | A search report has been drawn up | ||
V1 | Lapsed because of non-payment of the annual fee |
Effective date: 20140301 |